07N65
Abstract: fusible 1a SMD LN4148 10471 VARISTOR
Text: Innovative Green Power Solutions AC/DC Charger/Adapter Reference Designs ACT51X Rev 1.5 Oct 2012 -1- www.active-semi.com High Performance AC/DC Switching Power Solutions Application Change Note Revision History Page 4,6,8,10,12,14,16,18,20,22,24 2012-Oct– 19
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ACT51X
2012-Octâ
ACT512
PC817C
-26For
07N65
fusible 1a SMD
LN4148
10471 VARISTOR
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SA62S
Abstract: 2SA25 A00F
Text: Preliminary W19B320AT/B Data Sheet 4M x 8/2M × 16 BITS 3V FLEXIBLE BANK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION . 3 2. FEATURES . 3
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W19B320AT/B
SA62S
2SA25
A00F
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EN5394
Abstract: EN5394QI TAIYO soldermask Stabilizing Feedback Control Loops venable J-STD-020A EN5364 GRM21BR60J106KE19L TRANSISTOR C 6090 GRM31CR71A106KA01L LMK316B7106KL-T
Text: EN5394QI Feature Rich 9A Voltage Mode Synchronous Buck PWM DC-DC Converter with Integrated Inductor RoHS Compliant - Halogen Free Description Typical Application Circuit The EN5394QI is a Power Supply on a Chip PwrSoC DC to DC converter with integrated inductor, PWM controller, MOSFETS, and
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EN5394QI
EN5394QI
EN5394QIs
EN5394QIs
2x47F
EN5394
TAIYO soldermask
Stabilizing Feedback Control Loops venable
J-STD-020A
EN5364
GRM21BR60J106KE19L
TRANSISTOR C 6090
GRM31CR71A106KA01L
LMK316B7106KL-T
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M69KB096AB
Abstract: PSRAM M36P0R9060E0 M58PR512J
Text: M36P0R9060E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package PRELIMINARY DATA Features summary • ■ ■ ■ Multi-chip package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory
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M36P0R9060E0
108MHz,
66MHz
TFBGA10thout
M69KB096AB
PSRAM
M36P0R9060E0
M58PR512J
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TC55VCM416BTGN55
Abstract: TC55VCM416BSGN TC55VCM416BTGN TC55YCM416BSGN TC55VCM416BSGN55 TC55VEM416BXGN55 TSOP48-P-1220-0
Text: TC55VCM416BTGN, TC55VCM416BSGN, TC55VEM416BXGN55 TC55YCM416BTGN, TC55YCM416BSGN, TC55YEM416BXGN70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS Lead-Free 1,048,576-WORD BY 16-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55VCM416B, TC55VEM416B, TC55YCM416B and TC55YEM416B is a 16,777,216-bit static random
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TC55VCM416BTGN,
TC55VCM416BSGN,
TC55VEM416BXGN55
TC55YCM416BTGN,
TC55YCM416BSGN,
TC55YEM416BXGN70
576-WORD
16-BIT
TC55VCM416B,
TC55VEM416B,
TC55VCM416BTGN55
TC55VCM416BSGN
TC55VCM416BTGN
TC55YCM416BSGN
TC55VCM416BSGN55
TC55VEM416BXGN55
TSOP48-P-1220-0
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EN5394
Abstract: EN5394QI TAIYO soldermask ocp_adj Information Enpirion en5394qi
Text: EN5394QI Feature Rich 9A Voltage Mode Synchronous Buck PWM DC-DC Converter with Integrated Inductor RoHS Compliant - Halogen Free Typical Application Circuit Description The EN5394QI is a Power Supply on a Chip PwrSoC DC to DC converter with integrated inductor, PWM controller, MOSFETS, and
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EN5394QI
EN5394QI
EN5394QIs
EN5394
TAIYO soldermask
ocp_adj
Information Enpirion en5394qi
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BA512
Abstract: ba469 BA516 BA508 BA323 BA340 BA476 BA507 BA312 BA379
Text: K8S5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Muxed Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Preliminary February 4, 2004 Preliminary 0.1 Revision - Correct Device ID of Table 9 from 22F8h to 22FEh
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K8S5615ET
22F8h
22FEh
54MHz
66MHz
270sec
240sec
256Byte
00003FH
00007FH
BA512
ba469
BA516
BA508
BA323
BA340
BA476
BA507
BA312
BA379
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PSRAM
Abstract: M36P0R9060E0 M58PR512J M69KB096AM M58PRxxxJ
Text: M36P0R9060E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package Feature summary • ■ Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory
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M36P0R9060E0
TFBGA107
108MHz,
66MHz
PSRAM
M36P0R9060E0
M58PR512J
M69KB096AM
M58PRxxxJ
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TC55VCM416BTGN55
Abstract: TC55VCM416BTGN tba 810 TC55VCM416BSGN TC55YCM416BSGN
Text: TC55VCM416BTGN, TC55VCM416BSGN, TC55VEM416BXGN55 TC55YCM416BTGN, TC55YCM416BSGN, TC55YEM416BXGN70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS Lead-Free 1,048,576-WORD BY 16-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55VCM416B, TC55VEM416B, TC55YCM416B and TC55YEM416B is a 16,777,216-bit static random
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TC55VCM416BTGN,
TC55VCM416BSGN,
TC55VEM416BXGN55
TC55YCM416BTGN,
TC55YCM416BSGN,
TC55YEM416BXGN70
576-WORD
16-BIT
TC55VCM416B,
TC55VEM416B,
TC55VCM416BTGN55
TC55VCM416BTGN
tba 810
TC55VCM416BSGN
TC55YCM416BSGN
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10000uF capacitor electrolytic
Abstract: 10000uf, 63v electrolytic capacitor 10000uf, 16v electrolytic capacitor 10000uf 16v 10000uF capacitor 100uF 16V Electrolytic Capacitor 20 uf 100V electrolytic capacitor 1000UF 100UF 10UF
Text: File No.: Version: Page: Date: SYNTON-TECH CORPORATION ALUMINUM ELECTROLYTIC CAPACITORS E/C-02 A 1/15 2010.01.01 z Explanations Of Ordering Code DESCRIPTION : E/C 100UF 20% SYNTON CODE : E/C Series Capacitance Aluminum Electrolytic Capacitors value 101 Tolerance
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E/C-02
100UF
100UF
1000UF
10000UF
8X11mm
10000uF capacitor electrolytic
10000uf, 63v electrolytic capacitor
10000uf, 16v electrolytic capacitor
10000uf 16v
10000uF capacitor
100uF 16V Electrolytic Capacitor
20 uf 100V electrolytic capacitor
1000UF
10UF
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Untitled
Abstract: No abstract text available
Text: Enpirion Power Datasheet EN5394QI 9A PowerSoC Voltage Mode Synchronous Buck PWM DC-DC Converter With Integrated Inductor Description Typical Application Circuit The EN5394QI is a Power Supply on a Chip PwrSoC DC to DC converter with integrated inductor, PWM controller, MOSFETS, and
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EN5394QI
EN5394QIs
EN5394QIs
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TC55VCM416BTGN55
Abstract: TC55VCM416BTGN40 TC55VCM416BTGN TC55VCM416BSGN TC55VEM416BXGN40 TC55YCM416BSGN TC55YEM416BXGN55
Text: TC55VCM416BTGN, TC55VCM416BSGN, TC55VEM416BXGN40,55 TC55YCM416BTGN, TC55YCM416BSGN, TC55YEM416BXGN55,70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS Lead-Free 1,048,576-WORD BY 16-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55VCM416B, TC55VEM416B, TC55YCM416B and TC55YEM416B is a 16,777,216-bit static random
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TC55VCM416BTGN,
TC55VCM416BSGN,
TC55VEM416BXGN40
TC55YCM416BTGN,
TC55YCM416BSGN,
TC55YEM416BXGN55
576-WORD
16-BIT
TC55VCM416B,
TC55VEM416B,
TC55VCM416BTGN55
TC55VCM416BTGN40
TC55VCM416BTGN
TC55VCM416BSGN
TC55YCM416BSGN
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L24002
Abstract: NAND "read disturb" 1GB Toshiba 512 NAND MLC FLASH BGA PC133 registered reference design CMOS 0.8mm process cross Lithium battery CR2025 sony M2V28S30AVP M5M51008CFP
Text: Future On Chips MITSUBISHI SEMICONDUCTORS MITSUBISHI ELECTRIC CORPORATION ULSI Memory Memory Series Series ULSI RAM/MCP/FLASH New Data Package http://www.mitsubishichips.com Jul. 2000 MITSUBISHI ELECTRIC L-11002-01 CONTENTS General Business Operation Network and Production Facilities
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L-11002-01
64MDRAM
64MSDRAM
128MSDRAM
256MSDRAM
144MRDRAM
L24002
NAND "read disturb" 1GB
Toshiba 512 NAND MLC FLASH BGA
PC133 registered reference design
CMOS 0.8mm process cross
Lithium battery CR2025 sony
M2V28S30AVP
M5M51008CFP
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PSRAM
Abstract: M36P0R9070E0 M58PR512J M69KB128AA
Text: M36P0R9070E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash Memory 128 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package PRELIMINARY DATA Features summary • ■ ■ ■ Multi-chip package – 1die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash Memory
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M36P0R9070E0
128Mbit
TFBGA107
2112-bit
64-bit
PSRAM
M36P0R9070E0
M58PR512J
M69KB128AA
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Untitled
Abstract: No abstract text available
Text: Advance Information W19B32XMT/B 4M x 8/2M × 16 3V DUAL BANK FLASH MEMORY GENERAL DESCRIPTION The W19B32XMT/B is a 32Mbit, 2.7~3.6 volt dual bank CMOS flash memory organized as 4M × 8 or 2M × 16 bits. The word-wide × 16 data appears on DQ15-DQ0, and byte-wide (× 8)
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W19B32XMT/B
W19B32XMT/B
32Mbit,
DQ15-DQ0,
12-volt
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EN5394QI
Abstract: 15nf EN5394 Information Enpirion en5394qi SYDC
Text: EN5394QI Feature Rich 9A Voltage Mode Synchronous Buck PWM DC-DC Converter with Integrated Inductor RoHS Compliant - Halogen Free Description Typical Application Circuit The EN5394QI is a Power Supply on a Chip PwrSoC DC to DC converter with integrated inductor, PWM controller, MOSFETS, and
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EN5394QI
EN5394QI
EN5394QIs
high-perform-894-6090
884-EN5394QI
15nf
EN5394
Information Enpirion en5394qi
SYDC
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Untitled
Abstract: No abstract text available
Text: Preliminary W19B32XMT/B Data Sheet 4M x 8/2M × 16 3V DUAL BANK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4
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W19B32XMT/B
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Untitled
Abstract: No abstract text available
Text: Advance Information W19B320ST/B 4M x 8/2M × 16 3V FLASH MEMORY GENERAL DESCRIPTION The W19B320ST/B is a 32Mbit, 2.7~3.6 volt CMOS flash memory organized as 4M × 8 or 2M × 16 bits. For flexible erase capability, the 32 Mbits of data are divided into eight 8KB, and
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W19B320ST/B
W19B320ST/B
32Mbit,
DQ15-DQ0,
12-volt
u441798
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vw19b
Abstract: W19B320S 320ST w19b320 W19L320 winbond
Text: W19B L 320ST/B Data Sheet 4M x 8/2M × 16 3V(3.3V) FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4
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320ST/B
vw19b
W19B320S
320ST
w19b320
W19L320
winbond
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Untitled
Abstract: No abstract text available
Text: Preliminary W19B L 320ST/B Data Sheet 4M x 8/2M × 16 3V(3.3V) FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4
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320ST/B
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BGA-Z85
Abstract: ADQ0-ADQ15 M36P0R9060N0 M69KM096AA
Text: M36P0R9060N0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Mux I/O, Multi-Chip Package Preliminary Data Feature summary • ■ ■ ■ Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory
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M36P0R9060N0
TFBGA107
BGA-Z85
ADQ0-ADQ15
M36P0R9060N0
M69KM096AA
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sandisk micro sd card pin
Abstract: MCP 1Gb nand 512mb dram 130 256K x 16 DRAM FPM cross reference Toshiba NAND MLC FLASH BGA TSOP 48 Package nand memory toshiba MCP 1Gb 512Mb 130 PC133 registered reference design L7103 02bjxx ulsi
Text: Future On Chips MITSUBISHI SEMICONDUCTORS MITSUBISHI ELECTRIC CORPORATION ULSI Memory Memory Series Series ULSI RAM/MCP/FLASH New Data Package http://www.mitsubishichips.com Jul. 2000 L-11002-01 MITSUBISHI ELECTRIC CONTENTS 1. General 1 2. DRAM 9 3. Low Power SRAM
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L-11002-01
L-11003-0I
sandisk micro sd card pin
MCP 1Gb nand 512mb dram 130
256K x 16 DRAM FPM cross reference
Toshiba NAND MLC FLASH BGA
TSOP 48 Package nand memory toshiba
MCP 1Gb 512Mb 130
PC133 registered reference design
L7103
02bjxx
ulsi
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MSA1020
Abstract: sc 6700 Mitsubishi flash
Text: L-61103-0A MITSUBISHI ELECTRIC REV Features of Mitsubishi MCP Loaded DINOR Flash 1/2 16Mb -> 32Mb -> 64Mb 2. High Speed Access Time DINOR realizes high speed random access at low voltage. 3. High Speed Erase Fastest Erase Time of all Flash Memories (40ms/Block;Typical)
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L-61103-0A
40ms/Block
14mm2
11mm2
L-61104-0A
MSA1020
sc 6700
Mitsubishi flash
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sharp mask rom
Abstract: No abstract text available
Text: MEMORIES Combination Memories ★ Under development • SRAM +Flash Memory Stacked TSOP Capacity SK configuration 1M SRAM X 4M FLASH X 8 8 LR-S13011 LR-S1302 1MSRAM X 8M FLASH X 8 8 1MSRAM X 16 8M FLASH vA 1O Block) 2M SRAM 1 1 1 1 1 8M FLASH 1 1 1 BM FLASH
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OCR Scan
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LR-S13011
LR-S1302
LR-S1304
LR-S1303
LR-S1313
LR-S1306
LR-S1305A
LR-S1307
56FBGA
72FBGA
sharp mask rom
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