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    8MX32 DDR2 Search Results

    8MX32 DDR2 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SSTUB32872AHMLFT Renesas Electronics Corporation 28-Bit Registered Buffer for DDR2 Visit Renesas Electronics Corporation
    SSTUB32872AHLF Renesas Electronics Corporation 28-Bit Registered Buffer for DDR2 Visit Renesas Electronics Corporation
    SSTUB32872AHLFT Renesas Electronics Corporation 28-Bit Registered Buffer for DDR2 Visit Renesas Electronics Corporation
    SSTUB32871AHLF Renesas Electronics Corporation 27-Bit Registered Buffer for DDR2 Visit Renesas Electronics Corporation
    SSTUB32871AHLFT Renesas Electronics Corporation 27-Bit Registered Buffer for DDR2 Visit Renesas Electronics Corporation

    8MX32 DDR2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    512MB 8Mx32 DDR DRAM

    Abstract: No abstract text available
    Text: SU5320835D4F0CU August 19, 2004 Ordering Information Part Numbers Description Module Speed SM5320835D4F0CG 8Mx32 32MB , DDR, 100-pin DIMM, Unbuffered, Non-ECC, 8Mx16 Based, DDR266A, 25.40mm, 22Ω DQ termination. PC2100 @ CL 2.0, 2.5 SB5320835D4F0CG 8Mx32 (32MB), DDR, 100-pin DIMM, Unbuffered, Non-ECC,


    Original     		PDF SU5320835D4F0CU SM5320835D4F0CG SB5320835D4F0CG 8Mx32 100-pin 8Mx16 DDR266A, 512MB 8Mx32 DDR DRAM

    RFU20

    Abstract: G72M sc413 BLM18PG181SN1D nvidia g72m 7SH02 nvidia MXM MXM CONNECTOR G72M-V quanta computer
    Text: 5 4 D 3 2 CH-A NVIDIA PCI-E x16 CH-B FCBGA 820pin MXM CONNECTOR D VRAM GDDR3 8Mx32 16Mx32 Page8 Channel C is available on G73M only CRT C VRAM GDDR3 8Mx32 16Mx32 Page7 G72M G73M TV 1 C LVDS Page3 ~ 6 2.5V B B 3.3V Page2 VIN VCORE VRM VCORE 1.8V VRM 1.8V Page9


    Original     		PDF 8Mx32 16Mx32 820pin NONPHY-X16 FG-13X91-20-230P H-C236D118P2 RFU20 G72M sc413 BLM18PG181SN1D nvidia g72m 7SH02 nvidia MXM MXM CONNECTOR G72M-V quanta computer

    11mmx14mm

    Abstract: No abstract text available
    Text: IS43DR32800A, IS43DR32801A 8Mx32 256Mb DDR2 DRAM FEATURES • Vdd = +1.8V ±0.1V, Vddq = +1.8V ±0.1V • JEDEC standard 1.8V I/O SSTL_18-compatible • Double data rate interface: two data transfers per clock cycle • Differential data strobe (DQS, DQS)


    Original     		PDF IS43DR32800A, IS43DR32801A 8Mx32 256Mb 18-compatible) IS43DR32801A 800Mhz 667Mhz 533Mhz 400Mhz 11mmx14mm

    is43dr32800a

    Abstract: IS43DR32801A-37CBLI DDR2-553 IS43DR32801A-5BBLI is43dr32800a-5bbl IS43DR32801A 8Mx32 DDR2
    Text: IS43DR32800A, IS43DR32801A 8Mx32 256Mb DDR2 DRAM FEATURES • Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V • JEDEC standard 1.8V I/O SSTL_18-compatible • Double data rate interface: two data transfers per clock cycle • Differential data strobe (DQS, DQS)


    Original     		PDF IS43DR32800A, IS43DR32801A 8Mx32 256Mb 18-compatible) IS43DR32801A-5BBL -40oC DDR2-667D IS43DR32801A-3DBLI is43dr32800a IS43DR32801A-37CBLI DDR2-553 IS43DR32801A-5BBLI is43dr32800a-5bbl IS43DR32801A 8Mx32 DDR2

    Untitled

    Abstract: No abstract text available
    Text: IS43DR32800A, IS43/46DR32801A 8Mx32 256Mb DDR2 DRAM PRELIMINARY INFORMATION SEPTEMBER 2010 FEATURES DESCRIPTION • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC standard 1.8V I/O SSTL_18-compatible • Double data rate interface: two data transfers per clock cycle


    Original     		PDF IS43DR32800A, IS43/46DR32801A 8Mx32 256Mb 18-compatible) -40oC DDR2-400B IS46DR32801A-5BBLA1

    Untitled

    Abstract: No abstract text available
    Text: IS43/46DR32801B 8Mx32 256Mb DDR2 DRAM FEATURES PRELIMINARY INFORMATION SEPTEMBER 2013 DESCRIPTION • Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V • JEDEC standard 1.8V I/O SSTL_18-compatible • Double data rate interface: two data transfers per clock cycle


    Original     		PDF IS43/46DR32801B 8Mx32 256Mb 18-compatible) -40oC DDR2-667D IS46DR32801B-3DBLA1 DDR2-533C IS46DR32801B-37CBLA1

    is46dr32801a-5bbla1

    Abstract: 126-ball IS46DR32801A
    Text: IS43DR32800A, IS43/46DR32801A 8Mx32 256Mb DDR2 DRAM FEATURES • Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V • JEDEC standard 1.8V I/O SSTL_18-compatible • Double data rate interface: two data transfers per clock cycle • Differential data strobe (DQS, DQS)


    Original     		PDF IS43DR32800A, IS43/46DR32801A 8Mx32 256Mb 18-compatible) DDR2-667D IS43DR32801A-3DBLI DDR2-533C IS43DR32801A-37CBLI DDR2-400B is46dr32801a-5bbla1 126-ball IS46DR32801A

    is43dr32800a

    Abstract: IS43DR32801A DDR2 SDRAM IS46DR32801A-5BBLA2
    Text: IS43DR32800A, IS43/46DR32801A 8Mx32 256Mb DDR2 DRAM FEATURES • Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V • JEDEC standard 1.8V I/O SSTL_18-compatible • Double data rate interface: two data transfers per clock cycle • Differential data strobe (DQS, DQS)


    Original     		PDF IS43DR32800A, IS43/46DR32801A 8Mx32 256Mb 18-compatible) -40oC DDR2-400B IS46DR32801A-5BBLA1 is43dr32800a IS43DR32801A DDR2 SDRAM IS46DR32801A-5BBLA2

    Untitled

    Abstract: No abstract text available
    Text: K017 IS43DR32800A, IS43DR32801A 8Mx32 256Mb DDR2 DRAM FEATURES • Vdd = +1.8V ±0.1V, Vddq = +1.8V ±0.1V • JEDEC standard 1.8V I/O SSTL_18-compatible • Double data rate interface: two data transfers per clock cycle • Differential data strobe (DQS, DQS)


    Original     		PDF IS43DR32800A, IS43DR32801A 8Mx32 256Mb 18-compatible) IS43DR32801A 800Mhz 667Mhz 533Mhz 400Mhz

    IS43DR32801B

    Abstract: No abstract text available
    Text: IS43/46DR32801B 8Mx32 256Mb DDR2 DRAM FEATURES ADVANCED INFORMATION JUNE 2012 DESCRIPTION • Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V • JEDEC standard 1.8V I/O SSTL_18-compatible • Double data rate interface: two data transfers per clock cycle • Differential data strobe (DQS, DQS)


    Original     		PDF IS43/46DR32801B 8Mx32 256Mb 18-compatible) IS43DR32801B-3DBLI IS43DR32801B-37CBLI IS43DR32801B-5BBLI -40oC IS43DR32801B

    IS43DR32801B

    Abstract: DDR2 SDRAM
    Text: IS43/46DR32801B 8Mx32 256Mb DDR2 DRAM FEATURES NOVEMBER 2013 DESCRIPTION • Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V • JEDEC standard 1.8V I/O SSTL_18-compatible • Double data rate interface: two data transfers per clock cycle • Differential data strobe (DQS, DQS)


    Original     		PDF IS43/46DR32801B 8Mx32 256Mb 18-compatible) options-40oC -40oC DDR2-667D IS46DR32801B-3DBLA1 DDR2-533C IS46DR32801B-37CBLA1 IS43DR32801B DDR2 SDRAM

    Untitled

    Abstract: No abstract text available
    Text: IS43/46DR32801B 8Mx32 256Mb DDR2 DRAM FEATURES ADVANCED INFORMATION OCTOBER 2010 DESCRIPTION • Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V • JEDEC standard 1.8V I/O SSTL_18-compatible • Double data rate interface: two data transfers per clock cycle • Differential data strobe (DQS, DQS)


    Original     		PDF IS43/46DR32801B 8Mx32 256Mb 18-compatible) use3DR32801B-3DBLI IS43DR32801B-37CBLI IS43DR32801B-5BBLI -40oC

    Untitled

    Abstract: No abstract text available
    Text: IS43/46DR32801B 8Mx32 256Mb DDR2 DRAM ADVANCED INFORMATION JUNE 2012 FEATURES DESCRIPTION • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC standard 1.8V I/O SSTL_18-compatible • Double data rate interface: two data transfers per clock cycle • Differential data strobe (DQS, DQS)


    Original     		PDF IS43/46DR32801B 8Mx32 256Mb 18-compatible) IS43DR32801B-37CBLI DDR2-400B IS43DR32801B-5BBLI -40oC

    Automotive Product Selector Guide

    Abstract: products automotive IS61WV51216 IS61WV512 DDR RAM 512M is66wve2m16 IS61LPS2048 IS61WV25632 BGA165 VFBGA package tray
    Text: Automotive Market Support Introduction ISSI has been supporting the Automotive Market since 1999. In 2001, ISSI began to broaden its support of the market by introducing the Automotive Business Unit. The purpose of this business unit is to provide cross-functional unit support within ISSI to continually enhance the Automotive Infrastructure from


    Original     		PDF

    ddr ram repair

    Abstract: 32MX16 DDR repair SQ12-010 4MX16 8MX16
    Text: Selecting a Die Product • Stacked die offers smallest package, lower cost, improved reliability • SDR/DDR, LP-SDR, LP-DDR, PSRAM • 1.8V, 2.5V and 3.3V • Speed and temperature grades • Technical support, assembly information, SIP/ MCP level testing


    Original     		PDF

    is62c51216al

    Abstract: IS43LR16320B IS66WVE4M16BLL is66wve2m16 IS43DR16640A BGA60 IS66WVE4M16ALL TSOP2-44 IS42SM16400G is45vs16160d
    Text: To our valued customers, At ISSI we design, develop and market high performance integrated circuits for the following key markets: i automotive electronics (ii) networking/telecommunications infrastructure, (iii) industrial/military/medical electronics (iv) mobile communications and digital


    Original     		PDF

    IS43LR32640

    Abstract: is61wv5128 Product Selector Guide is42s86400 IS46R16160B IS25LD010 IS25LD025 IS25LQ IS62WV5128DALL BGA 168
    Text: To our valued customers, At ISSI we design, develop and market high performance integrated circuits for the following key markets: i automotive, (ii) communications, (iii) digital consumer, and (iv) industrial/medical/military. These key markets all require high quality and reliability, extended temperature ranges, and long-term support. Our primary products are high speed and


    Original     		PDF i1-44-42218428 IS43LR32640 is61wv5128 Product Selector Guide is42s86400 IS46R16160B IS25LD010 IS25LD025 IS25LQ IS62WV5128DALL BGA 168

    IS23SC55160

    Abstract: is25c64B is61wv5128 is62c1024al TSOP2-44 IS61WV51216 is62c51216 tqfp-100 IS43DR16640A is45vs16160d
    Text: To our valued customers, Often times electronic systems are placed in harsh environments that test the limits of device quality and reliability. These harsh environments exist in many Industrial, Automotive, Networking, and Mobile Communication applications. Many of these applications are


    Original     		PDF

    ddr2

    Abstract: DDR2-800E IS43DR16640B DDR2-400B 126-ball IS46DR BGA60 5bbl 800E IS43DR32160C
    Text: DDR2 SDRAM Up to 800Mbps data rate ► Applications: • Telecom Access Nodes PON OLT, DSLAM, CMTS, Wireless Aggregation Nodes VoIP Switches and Routers Packet Optical Transport • Automotive Infotainment Telematics Driver Information Systems • Other


    Original     		PDF 800Mbps 126-ball 84-ball 60-ball -37CBL, -37CBLI, -25EBL -37CBLI ddr2 DDR2-800E IS43DR16640B DDR2-400B IS46DR BGA60 5bbl 800E IS43DR32160C

    16M X 32 SDR SDRAM

    Abstract: IS42VM16400K is66wve2m16 IS42SM16100G is66wvc4m16 ISSI IS42S16400j IS66WVC4M16ALL CRAM 256mb IS42RM16800G
    Text: Known Good Die KGD /Wafer Level Memories Introduction Die-level customers require a memory partner who can meet their many unique needs for high quality, long term support, guaranteed availability, and low total cost of ownership. ISSI is a provider of high quality specialty memory solutions for


    Original     		PDF

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


    Original     		PDF BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm

    RISC-Processor s3c2410

    Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
    Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH


    Original     		PDF BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B

    HY5PS1G1631CFP

    Abstract: H5PS5162 h5ps5162ffr HY5PS1G1631C hy5rs123235b hy5ps121621cfp-25 HY5PS121621C-FP25 HY5PS1G1631 HY5RS123235BFP-14 hy5ps561621b
    Text: Q2’ 2008 Short Form Catalog Part Number System Change Notice Back ground – Effective from September, 2007, a more concise part numbering system is utilized by Hynix with the intention of managing product line with more consistency Target Product – Devices developed after 2007-09-01 and their


    Original     		PDF com/eng/00 256Mb 16Mx16 300MHz HY5DU561622ETP-33 TSOPI170ball) 16Bank, H5GQ1H24MJR-T1C 170ball) HY5PS1G1631CFP H5PS5162 h5ps5162ffr HY5PS1G1631C hy5rs123235b hy5ps121621cfp-25 HY5PS121621C-FP25 HY5PS1G1631 HY5RS123235BFP-14 hy5ps561621b

    Samsung EOL

    Abstract: IS42S81600F is42s16320 IS43DR16320 IS42S32200L IS49NLC36800 IS43R32400E IS46R Mobile SDRAM IS42S32200E
    Text: Industrial Grade Memory Products Selecting the Right ISSI Industrial Grade Memory Fastest Random Access Access <20ns 288-576Mb Memory No DRC* Lower cost/bit 18-72Mb RLDRAM 10-20ns Easy Interface, Low Power Higher Density Ultra Low Power Synch SRAM <5ns Asynch SRAM


    Original     		PDF 288-576Mb 10-20ns 18-72Mb 64Kb-16Mb 8Mb-64Mb 16Mb-512Mb 16Mb-1Gb 256Mb-2Gb 200Mhz -40oC Samsung EOL IS42S81600F is42s16320 IS43DR16320 IS42S32200L IS49NLC36800 IS43R32400E IS46R Mobile SDRAM IS42S32200E