SF-BGA60B-B-11
Abstract: No abstract text available
Text: Tooling hole X2 Y BGA60B 6.40mm [0.252"] See BGA pattern code to the right for actual pattern layout 8.00mm [0.315"] Top View (reference only) 0.80mm typ. X Ø 0.51mm [Ø 0.020"] BGA pad 1 3.52mm [0.139"] Top View of Land Pattern Scale: 2:1 0.20mm [0.008"] dia.
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BGA60B
FR4/G10
SF-BGA60B-B-11
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BGA60C
Abstract: 0.8mm pitch BGA LS-BGA60C-11 BGA-60
Text: Tooling hole X2 BGA60C 6.40mm [0.252"] See BGA pattern code to the right for actual pattern layout Y 7.20mm [0.283"] Top View (reference only) 3.76mm [0.148"] 0.80mm typ. X Ø 0.51mm [Ø 0.020"] BGA pad 2.17mm [0.086"] 1 0.20mm [0.008"] dia. Top View of Land Pattern
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BGA60C
FR4/G10
LS-BGA60C-11
BGA60C
0.8mm pitch BGA
BGA-60
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Samsung EOL
Abstract: IS42S81600F is42s16320 IS43DR16320 IS42S32200L IS49NLC36800 IS43R32400E IS46R Mobile SDRAM IS42S32200E
Text: Industrial Grade Memory Products Selecting the Right ISSI Industrial Grade Memory Fastest Random Access Access <20ns 288-576Mb Memory No DRC* Lower cost/bit 18-72Mb RLDRAM 10-20ns Easy Interface, Low Power Higher Density Ultra Low Power Synch SRAM <5ns Asynch SRAM
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288-576Mb
10-20ns
18-72Mb
64Kb-16Mb
8Mb-64Mb
16Mb-512Mb
16Mb-1Gb
256Mb-2Gb
200Mhz
-40oC
Samsung EOL
IS42S81600F
is42s16320
IS43DR16320
IS42S32200L
IS49NLC36800
IS43R32400E
IS46R
Mobile SDRAM
IS42S32200E
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Untitled
Abstract: No abstract text available
Text: ESMT M53D128168A 2E Operation Temperature Condition -40°C~85°C Mobile DDR SDRAM 2M x16 Bit x 4 Banks Mobile DDR SDRAM Features z z z z z z z z z z JEDEC Standard Internal pipelined double-data-rate architecture, two data access per clock cycle Bi-directional data strobe (DQS)
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M53D128168A
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MBM29BS64LF
Abstract: MBM29BS64LF-18 MBM29BT64LF-18
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20916-1E BURST MODE FLASH MEMORY CMOS 64M 4M x 16 BIT MBM29BS/BT64LF-18/25 • GENERAL DESCRIPTION The MBM29BS/BT64LF is a 64M bit, 1.8 Volt-only, Burst mode and dual operation Flash memory organized as 4M words of 16 bits each. The device offered in a 60-ball FBGA package. This device is designed to be programmed
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DS05-20916-1E
MBM29BS/BT64LF-18/25
MBM29BS/BT64LF
60-ball
MBM29BS/
BT64LF-25
MBM29BT64LF-18
MBM29BS64LF-18
F0403
MBM29BS64LF
MBM29BS64LF-18
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Untitled
Abstract: No abstract text available
Text: ESMT M53D128168A 2E Mobile DDR SDRAM 2M x16 Bit x 4 Banks Mobile DDR SDRAM Features z z z z z z z z z z JEDEC Standard Internal pipelined double-data-rate architecture, two data access per clock cycle Bi-directional data strobe (DQS) No DLL; CLK to DQS is not synchronized.
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M53D128168A
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20913-2E BURST MODE FLASH MEMORY CMOS 32M 2M x 16 BIT MBM29BS/BT32LF 18/25 • GENERAL DESCRIPTION The MBM29BS/BT32LF is a 32M bit, 1.8 Volt-only, Burst mode and dual operation Flash memory organized as 2M words of 16 bits each. The device offered in a 60-ball FBGA package. This device is designed to be programmed
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DS05-20913-2E
MBM29BS/BT32LF
60-ball
MBM29BS/
BT32LF-25
MBM29BT32LF-18
MBM29BS32LF-18
F0401
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Untitled
Abstract: No abstract text available
Text: ESM T M53D2561616A 2F (Preliminary) Mobile DDR SDRAM 4M x16 Bit x 4 Banks Mobile DDR SDRAM Features All inputs except data & DM are sampled at the rising edge of the system clock(CLK) DQS is edge-aligned with data for READ; center-aligned with data for WRITE
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M53D2561616A
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Untitled
Abstract: No abstract text available
Text: TM SPANSION Flash Memory Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,
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F0401
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Untitled
Abstract: No abstract text available
Text: ESM T M13S2561616A 2K DDR SDRAM 4M x 16 Bit x 4 Banks Double Data Rate SDRAM Features Double-data-rate architecture, two data transfers per clock cycle Bi-directional data strobe (DQS) Differential clock inputs (CLK and CLK ) DLL aligns DQ and DQS transition with CLK transition
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M13S2561616A
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Untitled
Abstract: No abstract text available
Text: ESM T M13S64164A 2Y DDR SDRAM 1M x 16 Bit x 4 Banks Double Data Rate SDRAM Features Double-data-rate architecture, two data transfers per clock cycle Bi-directional data strobe (DQS) Differential clock inputs (CLK and CLK ) DLL aligns DQ and DQS transition with CLK transition
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M13S64164A
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Untitled
Abstract: No abstract text available
Text: ESM T M13S2561616A 2A Automotive Grade DDR SDRAM 4M x 16 Bit x 4 Banks Double Data Rate SDRAM Features Double-data-rate architecture, two data transfers per clock cycle Bi-directional data strobe (DQS) Differential clock inputs (CLK and CLK ) DLL aligns DQ and DQS transition with CLK transition
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M13S2561616A
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Untitled
Abstract: No abstract text available
Text: ESM T M13S128168A 2N Operation Temperature Condition -40°C~85°C DDR SDRAM 2M x 16 Bit x 4 Banks Double Data Rate SDRAM Features Double-data-rate architecture, two data transfers per clock cycle Bi-directional data strobe (DQS) Differential clock inputs (CLK and CLK )
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M13S128168A
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HDQ70
Abstract: G993 KB910Q fan control g993 LA-2781 compal Socket AM2 Compal Electronics TPS2231 ch7307c
Text: A B C D E 1 1 Compal Confidential 2 2 HDQ70 Schematics Document Intel Dothan Processor with 915PM/915GM + DDRII + ICH6M With ATi M26-P 3 3 2005-07-29 REV: 2.0 4 4 Compal Electronics, Inc. Compal Secret Data Security Classification 2005/07/29 Issued Date
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HDQ70
915PM/915GM
M26-P)
HDQ70/HDQ71
LA-2781
G993
KB910Q
fan control g993
LA-2781
compal
Socket AM2
Compal Electronics
TPS2231
ch7307c
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KB910Q
Abstract: LS-2871 Compal Electronics PCI6411 Socket AM2 MAX1532A isl6227caz KSO151 compal ATI M26P
Text: A B C D E 機密 1 1 Compal Confidential HTW00 LA-2871 Schematics Document 2 2 Intel Dothan with 915PM GM /910GML + DDRII + ICH6M (+VGA/B ATi M24C/M26P) 2005-08-22 REV: 1.0 3 3 4 4 2005/08/22 Issued Date Compal Electronics, Inc. Compal Secret Data Security Classification
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HTW00
LA-2871
915PM
/910GML
M24C/M26P)
KB910Q
LS-2871
Compal Electronics
PCI6411
Socket AM2
MAX1532A
isl6227caz
KSO151
compal
ATI M26P
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max1532a
Abstract: Compal LA-2781 HDQ70 ATI M26P LA-2781 KB910Q TPS2231 EDL71 Socket AM2 Compal Electronics
Text: A B C D E 1 1 Compal Confidential 2 2 HQD70/HDQ71 Schematics Document Intel Dothan Processor with 915PM/915GM + DDRII + ICH6M With ATi M26-P 3 3 2005-05-12 REV: 0.2 (For DVT) 4 4 Compal Electronics, Inc. Compal Secret Data Security Classification 2005/03/01
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HQD70/HDQ71
915PM/915GM
M26-P)
LA-2781
max1532a
Compal LA-2781
HDQ70
ATI M26P
LA-2781
KB910Q
TPS2231
EDL71
Socket AM2
Compal Electronics
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BGA-60
Abstract: LMX5100 0.18-um CMOS technology 0.18 um CMOS bluetooth transmitter receiver LMX5452 LMX51
Text: BR4005_LM5452 12/2/03 8:04 AM Page 1 LMX5452: integrated baseband controller and radio National Semiconductor. Powering the wireless world. Bluetooth Bluetooth wireless solutions Introducing the next generation in Bluetooth solutions National’s LMX5452 provides the features and
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BR4005
LM5452
LMX5452:
LMX5452
BGA-60
LMX5452
LMX5100,
8/13-bit
LMX5100
0.18-um CMOS technology
0.18 um CMOS
bluetooth transmitter receiver
LMX51
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Untitled
Abstract: No abstract text available
Text: ESMT M13L2561616A 2A DDR SDRAM 4M x 16 Bit x 4 Banks Double Data Rate SDRAM Features z Double-data-rate architecture, two data transfers per clock cycle z Bi-directional data strobe (DQS) z Differential clock inputs (CLK and CLK ) z DLL aligns DQ and DQS transition with CLK transition
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M13L2561616A
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EM42BM1684LBB
Abstract: EM42BM1684LBB-75F EM42BM1684LBB-75FE
Text: eorex EM42BM1684LBB Preliminary 512Mb 8Mx4Bank×16 Double DATA RATE SDRAM Features Description • Internal Double-Date-Rate architecture with 2 Accesses per clock cycle. • 1.8V ±0.1V VDD/VDDQ • 1.8V LV-COMS compatible I/O • Burst Length (B/L) of 2, 4, 8, 16
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EM42BM1684LBB
512Mb
EM42BM1684LBB
EM42BM1684LBB-75F
EM42BM1684LBB-75FE
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BGA676
Abstract: BGA665 BGA-1156 156 QFN 12X12 LGA240 BGA-783 BGA441 BGA1024 BGA1521 7286X
Text: Ironwood Electronics Appendix A AP-A.1 APPENDIX A • BGA Chip Package Specification Tables . . . . . . . .page AP.2 thru AP.16 • LGA Chip Package Specification Table . . . . . . . . . . . . . . . . .page AP.17 • MLF Package Specification Table . . . . . . . . . . . . . . . . . . . . .page AP.18
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BGA16A1ATTERNS
BGA676
BGA665
BGA-1156
156 QFN 12X12
LGA240
BGA-783
BGA441
BGA1024
BGA1521
7286X
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Untitled
Abstract: No abstract text available
Text: ESMT M53D2561616A 2F Mobile DDR SDRAM 4M x16 Bit x 4 Banks Mobile DDR SDRAM Features z z z z z z z z z z JEDEC Standard Internal pipelined double-data-rate architecture, two data access per clock cycle Bi-directional data strobe (DQS) No DLL; CLK to DQS is not synchronized.
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M53D2561616A
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Untitled
Abstract: No abstract text available
Text: ESMT M53D2561616A 2F (Preliminary) Mobile DDR SDRAM 4M x16 Bit x 4 Banks Mobile DDR SDRAM Features z z z z z z z z z z JEDEC Standard Internal pipelined double-data-rate architecture, two data access per clock cycle Bi-directional data strobe (DQS) No DLL; CLK to DQS is not synchronized.
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M53D2561616A
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MBM29BS64LF
Abstract: DS05 MBM29BS64LF-18 MBM29BT64LF-18
Text: 富士通半導体デバイス DS05–20916–1 DATA SHEET バーストモードフラッシュメモリ CMOS 64M 4 M x 16 BIT MBM29BS/BT64LF-18/25 • 概要 MBM29BS/BT64LF は , 67,108,864bit の容量で , ＋ 1.8 V 単一電源によるチップ一括消去およびセクタ単位での消去と
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MBM29BS/BT64LF-18/25
MBM29BS/BT64LF
864bit
MBM29BS64LF
MBM29BS64BT
MBM29BS/BT64
MBM29BS/
BT64LF-25
DS05
MBM29BS64LF-18
MBM29BT64LF-18
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Untitled
Abstract: No abstract text available
Text: P-BGA60-0917-L00AZ
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