TC59SM716FT-75
Abstract: TC59SM708FT-75 TC59RM716GB THMY6416H1EG-75 TSOP 48 Package nand memory toshiba TH50VSF3681AASB TSOPII-54 16MX72 thmr1e16e THMY6432G1EG-75
Text: TOSHIBA AMERICA ELECTRONIC COMPONENTS DRAM COMPONENT PRODUCTS SELECTION GUIDE January 2002 Subject to change without notice ORG TYPE PKG SPEED (ns) BANKS ROW/ COL STATUS (2) Des Rec(3) FEATURES DATASHEET TC59RM718MB/RB(1) 8Mx18 Rambus CSP-62 800/711/600 MHz
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TC59RM718MB/RB
8Mx18
CSP-62
PC800/700/600
TC59RM716MB/RB
8Mx16
TC59RM716GB
TC59SM716FT-75
TC59SM708FT-75
TC59RM716GB
THMY6416H1EG-75
TSOP 48 Package nand memory toshiba
TH50VSF3681AASB
TSOPII-54
16MX72
thmr1e16e
THMY6432G1EG-75
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da53
Abstract: DB26
Text: 1066 MHz RDRAMâ 512/576 Mb 8Mx16/18x4i Advance Information Overview • The 1066 MHz Rambus DRAM (RDRAMâ) is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any
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8Mx16/18x4i)
DL0117-010
da53
DB26
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Untitled
Abstract: No abstract text available
Text: MR18R0824 6/8/C/G BN1 RAMBUS MODULE SERIAL PRESENCE DETECT RIMM SPD Specification based on 144M RDRAM(B-die, 32s banks) Verion 1.1 October 2000 Change History Version 1.1 (Oct. ′00) Based on the Samsung 144M RDRAM (A-die) SPD Specification 1.02 version.
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MR18R0824
MR18R082C
8Mx18
K4R441869B-NCK8/NCK7/NCG6)
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Untitled
Abstract: No abstract text available
Text: KMMR18R84 6/8/C/G AC1 RAMBUS MODULE SERIAL PRESENCE DETECT SPD Specification For 144M RDRAM(2nd Gen.) based RIMM REV. 1.03 February 2000 Revision History Revision 1.0 (June ′99) It is based on the RAMBUS SPD Specification 1.0 version. Revision 1.01 (Oct. ′99)
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KMMR18R84
300MHz
266MHz
02ver
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Untitled
Abstract: No abstract text available
Text: SMH288RFUUD20 October 11, 2001 Revision History • October 11, 2001 Datasheet released. Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel: 510 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com 1 Europe: 5 Kelvin Park South, Kelvin South, East Kilbride, G75 ORH, United Kingdom • Tel: +44-870-870-8747 • Fax: +44-870-870-8757
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SMH288RFUUD20
288MByte
8Mx18
184-pin
45ns/800MHzEREIN
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MR18R0824
Abstract: No abstract text available
Text: MR16R0824 8 BM0 MR18R0824(8)BM0 Preliminary Change History Version 1.0 (October 2000) - Preliminary * First copy. * Based on the 1.1a ver. 128/144Mbit RDRAMs(B-die, 32s banks) base Normal RIMM Datasheet. Page 0 Version 1.0 Oct. 2000 MR16R0824(8)BM0 MR18R0824(8)BM0
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MR16R0824
MR18R0824
128/144Mbit
8Mx16)
128Mb
16K/32ms
8Mx18)
144Mb
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MR18R0824
Abstract: No abstract text available
Text: MR18R0824 6/8/C/G AN1 RAMBUS MODULE SERIAL PRESENCE DETECT RIMM SPD Specification based on 144M RDRAM(A-die, 32s banks) Verion 1.1 October 2000 Change History Version 1.1 (Oct. ′00) Based on the Samsung 144M RDRAM (A-die) SPD Specification 1.02 version.
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MR18R0824
MR18R082C
8Mx18
K4R441869A-NCK8/NCK7/NCG6)
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MR18R0828AN1-CK8
Abstract: ck7 marking code MR18R0824 marking code b35 gan1 marking B44
Text: MR16R0824 6/8/C/G AN1 MR18R0824(6/8/C/G)AN1 Change History Version 1.0 (August 1999) - Preliminary * First copy. * Based on the Rambus RIMM Datasheet Rev.1.0. Version 1.01 (October 1999) Page No. Change Description 1 - Delete the part numbers of low power.
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MR16R0824
MR18R0824
127mm.
MR18R0828AN1-CK8
ck7 marking code
marking code b35
gan1
marking B44
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Untitled
Abstract: No abstract text available
Text: MR18R0824 8 BM0 RAMBUS MODULE SERIAL PRESENCE DETECT Mirrored RIMM SPD Specification based on 144M RDRAM(B-die, 32s banks) Version 1.1 October 2000 Change History Version 1.1 (Oct. ′00) Based on the Samsung 144M RDRAM (B-die,32s banks) Normal RIMM SPD Specification 1.1 version.
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MR18R0824
8Mx18
K4R441869B-MCK8/MCK7/MCG6)
16K/32ms
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MR18R0828BN1-CK8
Abstract: MR18R0824 A84 marking code
Text: MR16R0824 6/8/C/G BN1 MR18R0824(6/8/C/G)BN1 Change History Version 1.1 (October 2000) - First copy. - Based on the 1.1 ver. 128/144Mbit RDRAMs(A-die) base RIMM Datasheet. Version 1.1a (October 2000) * Update based on the latest Rambus RIMM Datasheet Page No.
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MR16R0824
MR18R0824
128/144Mbit
-711MHz/-600MHz)
-600MHz)
8Mx16)
128Mb
16K/32ms
MR18R0828BN1-CK8
A84 marking code
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MR18R0824
Abstract: No abstract text available
Text: MR18R0824 6/8/C/G BN1 RAMBUS MODULE SERIAL PRESENCE DETECT RIMM SPD Specification based on 144M RDRAM(B-die, 32s banks) Verion 1.1 October 2000 Change History Version 1.1 (Oct. ′00) Based on the Samsung 144M RDRAM (A-die) SPD Specification 1.02 version.
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MR18R0824
MR18R082C
8Mx18
K4R441869B-NCK8/NCK7/NCG6)
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Untitled
Abstract: No abstract text available
Text: 1066 MHz RDRAM 512/576 Mb 8Mx16/18x4i Advance Information Overview The 1066 MHz RDRAM is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high
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DL-0117-030
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HP83000
Abstract: HP8753E Kingston Technology testing of diode SAMSUNG RLC 4Mx1 Hyundai Semiconductor UPD488385FB-C80-45-BF1 UPD488385FB-C80-45BF1 KM418RD8C-RK80
Text: RDRAM Component Testing Summary As part of Intel’s enabling process, the following test/characterization procedure has been implemented on RDRAM components. A small sample of components 2-5 devices has been characterized on an HP83000 tester with Rebus, a test program written by Rambus. The RLC
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HP83000
HP8753E
Kingston Technology
testing of diode
SAMSUNG RLC
4Mx1
Hyundai Semiconductor
UPD488385FB-C80-45-BF1
UPD488385FB-C80-45BF1
KM418RD8C-RK80
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Untitled
Abstract: No abstract text available
Text: SMI144RBSAD01 July 11, 2000 Revision History • July 11, 2000 Datasheet released. Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel: 510 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com Europe: 36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: +44-1908 234030 • Fax: +44-1908-234191
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SMI144RBSAD01
144MByte
8Mx18
160-pin
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Rambus
Abstract: No abstract text available
Text: R e a d y f o r t h e N e w M e m o r y S t a n d a r d Never stop thinking. RDRAM In the last years memory bus frequency has evolved from 33MHz for EDO to the current standard of 100MHz for SDRAMs and up to 133MHz for the latest PC133 specification. However, despite this continuous improvement, memory speed has been outpaced
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33MHz
100MHz
133MHz
PC133
600MHz
400MHz
800Mb/s
20micron
4Mx18,
8Mx16,
Rambus
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Untitled
Abstract: No abstract text available
Text: MR18R0824 8 AM0 RAMBUS MODULE SERIAL PRESENCE DETECT Mirrored RIMM SPD Specification based on 144M RDRAM(A-die, 32s banks) Version 1.1 October 2000 Change History Version 1.1 (Oct. ′00) Based on the Samsung 144M RDRAM (A-die) Normal RIMM SPD Specification 1.02 version.
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MR18R0824
8Mx18
K4R441869A-MCK8/MCK7/MCG6)
16K/32ms
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DD 128
Abstract: MR18R0824
Text: MR16R0824 8 AM0 MR18R0824(8)AM0 Preliminary Change History Version 1.0 (October 2000) - Preliminary * First copy. * Based on the 1.1ver. 128/144Mbit RDRAMs(A-die, 32s banks) base Normal RIMM Datasheet. Page 0 Version 1.0 Oct. 2000 MR16R0824(8)AM0 MR18R0824(8)AM0
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MR16R0824
MR18R0824
128/144Mbit
8Mx16)
128Mb
16K/32ms
8Mx18)
144Mb
DD 128
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SGRAM
Abstract: 4MX16
Text: ‘H Y U N D A I SGRAM / Direct RDRAM / SyncLink DRAM ORDERING INFORMATION • 16Mbit SGRAM Organization Part Number Speed MHz Features Package 16M bit (512Kx32) HY58163210TQ 143/125/100 2Bank, 2K, 3.3V 100pin QFP Part Number SpeedjMbps) Features R&isage
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16Mbit
512Kx32)
HY58163210TQ
100pin
64/72Mbit
4Mx16)
4Mx18)
HYRDU64164M
HYRDU72184M
16Bank,
SGRAM
4MX16
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4MX16
Abstract: HYslu
Text: »«YUN D H I > •« TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUICK REFERENCE GUIDE Direct RDRAM/SyncLink DRAM Part Numbering 3. SGRAM/Direct RDRAM/ SyncLink DRAM DATA SHEETS 16Mbit SGRAM Organization Features Part Number Page 16Mbit (512Kx32 bit
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16Mbit
16Mbit
512Kx32
HY58163210TQ
64/72Mbit
4Mx16)
4Mx18)
16Bank,
HYRDU64164M
4MX16
HYslu
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HYC532100
Abstract: 4MX16 2MX32 8MX16 DRAM 1M X 8
Text: TABLE OF CONTENTS 1. INDEX Table of Contents. 2. FLASH CARD DATA SHEET FLASH M EM ORY CARD ORDERING INFORMATION HYCFL001 HYCFL002 HYCFLF16004 HYCFLF16008 1MB 2MB 4MB 8 MB . 3 512Kx8based .5
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HYCFL001
HYCFL002
HYCFLF16004
HYCFLF16008
512Kx8based
HYC532100
HYC532200
HYC532410
HYC536410
2Mx32/4Mx16
4MX16
2MX32
8MX16
DRAM 1M X 8
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KMCJ532512
Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
Text: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7
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KM41C1000C-6
KM41C1000CL-6
KM41C1000CSL-6
KM44C256C-6
KM44C256CL-6
KM44C256CSL-6
KM41C4000C-5
KM41C4000C-6
KM41C4000C-7
KM41C4000C-8
KMCJ532512
KM23C1000-20
KM28C64B
KMM594
KM718B90-12
zip 40pin
30-pin simm memory "16m x 8"
KM41C4000C-6
KM41C16000ALL
KM48V2104AL
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jeida 88 pin memory card
Abstract: jeida dram 88 pin dram card 60 pin jeida sram 2Mbyte dram 88 pin KMCJ616256 8Mx18 sram 4MX16 2MX32
Text: FUNCTION GUIDE 1. PRODUCT GUIDE 1.1 DRAM Card Card Style Vcc Density JEIDA/JEDEC 5.0V 2MByte 4M Byte 8M Byte 1.2 PK G Features • Fast Page Mode KMCJ532512 512Kx32/1Mx16 60/70/80 88 Pin Two Piece KMCJ536512 512Kx36/1Mx18 60/70/80 88 Pin Two Piece Operation
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KMCJ532512
KMCJ536512
512Kx32/1Mx16
512Kx36/1Mx18
1Mx32/2Mx16
1Mx36/2Mx18
2Mx32/4Mx16
2Mx36/4Mx18
4Mx32/8Mx16
jeida 88 pin memory card
jeida dram 88 pin
dram card 60 pin
jeida
sram 2Mbyte
dram 88 pin
KMCJ616256
8Mx18 sram
4MX16
2MX32
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jeida dram 88 pin
Abstract: No abstract text available
Text: 'HYUNDAI HYC536410 Series 4Mx36 DRAM CARD DESCRIPTION The HYC536410 is the DRAM memory card consisting of eight HY5117400ASLTand four HY5141OOALT built in the metal plate housing. The Hyundai DRAM card is optimized forthe applications such as buffering, main and add-in
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HYC536410
4Mx36
HY5117400ASLTand
HY5141OOALT
x36/18
1MC04-01-FEBB5
HYC536410-Series
1MC04-01-FEB95
jeida dram 88 pin
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