EEPROM
Abstract: 24LC65 24LC65-P 8Kx8 EEPROM
Text: 970922 01 ELFA artikelnr. 73-656-38 24LC65/P 8kx8 EEPROM SIDA: 1/11 73-656-46 24LC65/SM 8kx8 EEPROM 970922 01 SIDA: 2/11 970922 01 SIDA: 3/11 970922 01 SIDA: 4/11 970922 01 SIDA: 5/11 970922 01 SIDA: 6/11 970922 01 SIDA: 7/11 970922 01 SIDA: 8/11 970922 01
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24LC65/P
24LC65/SM
EEPROM
24LC65
24LC65-P
8Kx8 EEPROM
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Hitachi 1024k*8 SRAM
Abstract: HB28B128C8C HB28B512C8C CSP72 NVM1GBYTE CSP-72 512kx8 sram dip HN58X2402SI HN58X2404SI HN58X2408I
Text: Family Group TotalSize Organisation SupplyVoltage HN58X2464I EEPROM NVM 64kbit 8kx8 1.80 - 5.50 - SOP-8 2-wire serial interface, 400kHz HN58X2432I EEPROM NVM 32kbit 4kx8 1.80 - 5.50 - SOP-8 2-wire serial interface, 400kHz HN58X2416I EEPROM NVM 16kbit 2kx8
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HN58X2464I
64kbit
400kHz
HN58X2432I
32kbit
HN58X2416I
16kbit
HN58X2408I
Hitachi 1024k*8 SRAM
HB28B128C8C
HB28B512C8C
CSP72
NVM1GBYTE
CSP-72
512kx8 sram dip
HN58X2402SI
HN58X2404SI
HN58X2408I
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25C64VI
Abstract: 25C64V
Text: CAT25C64 64K-Bit SPI Serial CMOS EEPROM FEATURES DESCRIPTION • 10 MHz SPI compatible The CAT25C64 is a 64K-Bit SPI Serial CMOS EEPROM internally organized as 8Kx8 bits. Catalyst’s advanced CMOS Technology substantially reduces device power requirements. The CAT25C64 features a 64-byte page
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CAT25C64
64K-Bit
CAT25C64
64-byte
25C64VI
25C64V
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IS61SP25636
Abstract: s62lv256 256x16 sram 89C64 IS41LV16105 soj44 non-volatile SRAM 4KX8 issi 32kx16 IS80C31 64KX64
Text: ASYNCHRONOUS & APPLICATION SPECIFIC STATIC RAM Density Org. P/N Voltage Speeds ns Packages #Pins Status Comment Prod Prod Prod Prod Prod /CE 5V High Asyncronous SRAM 64K 256K 512K 1M 8Kx8 32Kx8 32Kx16 32Kx16 128Kx8 IS61C64B IS61C256AH IS61C3216 IS61C3216B
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32Kx8
32Kx16
128Kx8
64Kx16
128Kx16
IS61C64B
IS61C256AH
IS61C3216
IS61C3216B
IS61SP25636
s62lv256
256x16 sram
89C64
IS41LV16105
soj44
non-volatile SRAM 4KX8
issi 32kx16
IS80C31
64KX64
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Untitled
Abstract: No abstract text available
Text: CAT25640 64-Kb SPI Serial CMOS EEPROM FEATURES DESCRIPTION 10 MHz SPI compatible The CAT25640 is a 64-Kb Serial CMOS EEPROM device internally organized as 8Kx8 bits. This features a 64-byte page write buffer and supports the Serial Peripheral Interface SPI protocol. The device is
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CAT25640
64-Kb
64-byte
CAT25640
MD-1128
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Untitled
Abstract: No abstract text available
Text: CAT25640 64-Kb SPI Serial CMOS EEPROM FEATURES DESCRIPTION 10 MHz SPI compatible The CAT25640 is a 64-Kb Serial CMOS EEPROM device internally organized as 8Kx8 bits. This features a 64-byte page write buffer and supports the Serial Peripheral Interface SPI protocol. The device is
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CAT25640
64-Kb
64-byte
CAT25640
MD-1128
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25C64li
Abstract: 25C64VI marking code VV transistors 25C64 AEC-Q100 AN10 CAT25640 CAT25C64 25C64V
Text: Not recommended for new designs, replace with CAT25640 CAT25C64 64K-Bit SPI Serial CMOS EEPROM FEATURES DESCRIPTION • 10 MHz SPI compatible The CAT25C64 is a 64K-Bit SPI Serial CMOS EEPROM internally organized as 8Kx8 bits. Catalyst’s advanced CMOS Technology substantially reduces device power
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CAT25640
CAT25C64
64K-Bit
CAT25C64
64-byte
25C64li
25C64VI
marking code VV transistors
25C64
AEC-Q100
AN10
CAT25640
25C64V
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bq4010
Abstract: bq4010Y bq4010YMA-85N
Text: bq4010/bq4010Y 8Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility
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bq4010/bq4010Y
bq4010
536-bit
28-pin
10-year
bq4010Y
bq4010YMA-85N
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PDF
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bq4010
Abstract: bq4010MA bq4010Y bq4010YMA
Text: bq4010/bq4010Y 8Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility
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bq4010/bq4010Y
bq4010
536-bit
28-pin
10-year
bq4010MA
bq4010Y
bq4010YMA
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PDF
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Untitled
Abstract: No abstract text available
Text: CAT25640 64-Kb SPI Serial CMOS EEPROM Description The CAT25640 is a 64−Kb Serial CMOS EEPROM device internally organized as 8Kx8 bits. This features a 64−byte page write buffer and supports the Serial Peripheral Interface SPI protocol. The device is enabled through a Chip Select (CS) input. In addition, the
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CAT25640
64-Kb
64-byte
751BD
517AX
511AK
CAT25640/D
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100uF capacitor
Abstract: 12C68 DS1225Y STK12C68
Text: Using the STK12C68 Using the SIMTEK STK12C68 AutoStore 8K x 8 High Performance Nonvolatile Static RAM Simtek Corporation’s STK12C68 is a fast static RAM backed by a nonvolatile EEPROM shadow memory in an industry standard 28 pin package. The SRAM portion of memory operates similarly to other 8Kx8 fast
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STK12C68
STK12C68
DS1225Y
12C68
100uF capacitor
12C68
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Untitled
Abstract: No abstract text available
Text: bq4010/bq4010Y 8Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility
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bq4010/bq4010Y
28-pin
10-year
bq4010
536-bit
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PDF
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25640 AN
Abstract: 25640 AEC-Q100 CAT25640 MO-229 MS-001
Text: CAT25640 64-Kb SPI Serial CMOS EEPROM FEATURES DESCRIPTION 10 MHz SPI compatible The CAT25640 is a 64-Kb Serial CMOS EEPROM device internally organized as 8Kx8 bits. This features a 64-byte page write buffer and supports the Serial Peripheral Interface SPI protocol. The device is
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CAT25640
64-Kb
CAT25640
64-byte
MD-1128
25640 AN
25640
AEC-Q100
MO-229
MS-001
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PDF
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TTE24C
Abstract: No abstract text available
Text: 64K-bit/32K-bit 2-Wire Serial CMOS EEPROM TTE24C32/TTE24C64 Preliminary Description The TTE24C32/TTE24C64 is an electrically erasable PROM device that uses the standard 2-wire interface for communications. The TTE24C32/TTE24C64 contains a memory array of 32K-bits 4Kx8 and 64K-bits (8Kx8) repectively, and
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64K-bit/32K-bit
TTE24C32/TTE24C64
TTE24C32/TTE24C64
32K-bits
64K-bits
TE24C32/TTE24C64
TTE24C
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80C31 instruction set
Abstract: BOC31 80C31 F800H MCS-51 80c31 application 685C31
Text: '<Teï r er~>& EDH 685C31 EEPROM jjPak 8/12 MHz The fu tu re . . . today. PRELIMINARY Microcomputer 80C31 Based, CMOS 8Kx8 EEPROM plus 8Kx8 SRAM 0> 005612 Features The EDH 685C31 ^PAK from EDI is a new series of high density microcomputer modules based on the industry-standard 80C31 single
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OCR Scan
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685C31
80C31
80C31,
685C31-8CMHR
685C31
-12CMH
GU185RF
80C31 instruction set
BOC31
F800H
MCS-51
80c31 application
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UPAK
Abstract: static ram 8KX8 sram 8kx8 memory map
Text: pS. & • t<b EDH 685C31 ^E D I EEPROM |iPak 8/12 MHz The fu tu re . . . today. PRELIMINARY Microcomputer 80C31 Based, CMOS 8Kx8 EEPROM plus 8Kx8 SRAM O 005612 6 L Features The EDH 685C31 pPAK from EDI is a new series of high density microcomputer modules
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OCR Scan
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685C31
80C31
685C31
80C31,
on85C31-8CMHR
685C31-12CMHR
UPAK
static ram 8KX8
sram 8kx8 memory map
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Untitled
Abstract: No abstract text available
Text: RJ1 Prelim inary U N I T R O O E 8Kx8 ZEROPOWER NVSRAM Features General Description > Integrated ultra low-power SRAM, power-fail control circuit, and battery The bq4310Y ZEROPOWER NVSRAM is a 8Kx8 nonvolatile static RAM. The monolithic chip is available in the SNAPHAT package
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OCR Scan
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bq431OY
bq4310Y
28-pin,
330-mil
4833YPD
bg4310YSH-
bq48SH
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PDF
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Untitled
Abstract: No abstract text available
Text: bq4010/bq4010Y BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >- Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy
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OCR Scan
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bq4010/bq4010Y
bq4010
536-bit
28-pin
bq4010YMA-85N
-150N.
bq4010
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PDF
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Untitled
Abstract: No abstract text available
Text: bq4010/bq401OY BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description ► Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy
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OCR Scan
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4010/b
bq4010
536-bit
bq4010YMA-70N
bq4010-70
bq4010/bq4010Y
bq401Q
150ns
200ns
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PDF
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Untitled
Abstract: No abstract text available
Text: bq4010/bq4010Y BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >• D ata retention in the absence of power The CMOS bq4010 is a nonvolatile 65,636-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy
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OCR Scan
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bq4010/bq4010Y
bq4010
636-bit
28-pin
10-year
o010-70
bq4010Y-70
bq4010YMA-70N
bq4010
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PDF
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Q4010
Abstract: No abstract text available
Text: bq4010/bq401 OY BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >• D ata retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy
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OCR Scan
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bq4010/bq401
bq4010
536-bit
bq4010/bq4010Y
q4010
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PDF
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bq4010Y-xxxN
Abstract: No abstract text available
Text: bq4010/bq4010Y BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >• Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy
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OCR Scan
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bq4010/bq4010Y
bq4010
536-bit
bq4010YMA-85N
-150N.
bq4010-70
bq4010Y-70
bq4010YMA-70N
bq4010Y-xxxN
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Untitled
Abstract: No abstract text available
Text: bq4010/bq4010Y BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >• D ata retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy
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OCR Scan
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bq4010/bq4010Y
bq4010
536-bit
bq4010YMA-85N
-150N.
bq4010
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PDF
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Untitled
Abstract: No abstract text available
Text: bq4010/bq4010Y BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >- D ata retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy
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OCR Scan
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bq4010/bq4010Y
bq4010
536-bit
lithi50N.
bq4010-70
bq4010Y-70
bq4010YMA-70N
bq4010
bq401
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