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    8KX8 EEPROM Search Results

    8KX8 EEPROM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MD27C64-25 Rochester Electronics LLC UVPROM, 8KX8, 250ns, CMOS, PACKAGE-28 Visit Rochester Electronics LLC Buy
    MD27C64-20 Rochester Electronics LLC UVPROM, 8KX8, 200ns, CMOS, PACKAGE-28 Visit Rochester Electronics LLC Buy
    MD27C64-35 Rochester Electronics LLC UVPROM, 8KX8, 350ns, CMOS, PACKAGE-28 Visit Rochester Electronics LLC Buy
    MC28F008-10/B Rochester Electronics LLC EEPROM, Visit Rochester Electronics LLC Buy
    X28C512JI-12 Rochester Electronics LLC EEPROM, 64KX8, 120ns, Parallel, CMOS, PQCC32, PLASTIC, LCC-32 Visit Rochester Electronics LLC Buy

    8KX8 EEPROM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    EEPROM

    Abstract: 24LC65 24LC65-P 8Kx8 EEPROM
    Text: 970922 01 ELFA artikelnr. 73-656-38 24LC65/P 8kx8 EEPROM SIDA: 1/11 73-656-46 24LC65/SM 8kx8 EEPROM 970922 01 SIDA: 2/11 970922 01 SIDA: 3/11 970922 01 SIDA: 4/11 970922 01 SIDA: 5/11 970922 01 SIDA: 6/11 970922 01 SIDA: 7/11 970922 01 SIDA: 8/11 970922 01


    Original     		PDF 24LC65/P 24LC65/SM EEPROM 24LC65 24LC65-P 8Kx8 EEPROM

    Hitachi 1024k*8 SRAM

    Abstract: HB28B128C8C HB28B512C8C CSP72 NVM1GBYTE CSP-72 512kx8 sram dip HN58X2402SI HN58X2404SI HN58X2408I
    Text: Family Group TotalSize Organisation SupplyVoltage HN58X2464I EEPROM NVM 64kbit 8kx8 1.80 - 5.50 - SOP-8 2-wire serial interface, 400kHz HN58X2432I EEPROM NVM 32kbit 4kx8 1.80 - 5.50 - SOP-8 2-wire serial interface, 400kHz HN58X2416I EEPROM NVM 16kbit 2kx8


    Original     		PDF HN58X2464I 64kbit 400kHz HN58X2432I 32kbit HN58X2416I 16kbit HN58X2408I Hitachi 1024k*8 SRAM HB28B128C8C HB28B512C8C CSP72 NVM1GBYTE CSP-72 512kx8 sram dip HN58X2402SI HN58X2404SI HN58X2408I

    25C64VI

    Abstract: 25C64V
    Text: CAT25C64 64K-Bit SPI Serial CMOS EEPROM FEATURES DESCRIPTION • 10 MHz SPI compatible The CAT25C64 is a 64K-Bit SPI Serial CMOS EEPROM internally organized as 8Kx8 bits. Catalyst’s advanced CMOS Technology substantially reduces device power requirements. The CAT25C64 features a 64-byte page


    Original     		PDF CAT25C64 64K-Bit CAT25C64 64-byte 25C64VI 25C64V

    IS61SP25636

    Abstract: s62lv256 256x16 sram 89C64 IS41LV16105 soj44 non-volatile SRAM 4KX8 issi 32kx16 IS80C31 64KX64
    Text: ASYNCHRONOUS & APPLICATION SPECIFIC STATIC RAM Density Org. P/N Voltage Speeds ns Packages #Pins Status Comment Prod Prod Prod Prod Prod /CE 5V High Asyncronous SRAM 64K 256K 512K 1M 8Kx8 32Kx8 32Kx16 32Kx16 128Kx8 IS61C64B IS61C256AH IS61C3216 IS61C3216B


    Original     		PDF 32Kx8 32Kx16 128Kx8 64Kx16 128Kx16 IS61C64B IS61C256AH IS61C3216 IS61C3216B IS61SP25636 s62lv256 256x16 sram 89C64 IS41LV16105 soj44 non-volatile SRAM 4KX8 issi 32kx16 IS80C31 64KX64

    Untitled

    Abstract: No abstract text available
    Text: CAT25640 64-Kb SPI Serial CMOS EEPROM FEATURES DESCRIPTION „ 10 MHz SPI compatible The CAT25640 is a 64-Kb Serial CMOS EEPROM device internally organized as 8Kx8 bits. This features a 64-byte page write buffer and supports the Serial Peripheral Interface SPI protocol. The device is


    Original     		PDF CAT25640 64-Kb 64-byte CAT25640 MD-1128

    Untitled

    Abstract: No abstract text available
    Text: CAT25640 64-Kb SPI Serial CMOS EEPROM FEATURES DESCRIPTION „ 10 MHz SPI compatible The CAT25640 is a 64-Kb Serial CMOS EEPROM device internally organized as 8Kx8 bits. This features a 64-byte page write buffer and supports the Serial Peripheral Interface SPI protocol. The device is


    Original     		PDF CAT25640 64-Kb 64-byte CAT25640 MD-1128

    25C64li

    Abstract: 25C64VI marking code VV transistors 25C64 AEC-Q100 AN10 CAT25640 CAT25C64 25C64V
    Text: Not recommended for new designs, replace with CAT25640 CAT25C64 64K-Bit SPI Serial CMOS EEPROM FEATURES DESCRIPTION • 10 MHz SPI compatible The CAT25C64 is a 64K-Bit SPI Serial CMOS EEPROM internally organized as 8Kx8 bits. Catalyst’s advanced CMOS Technology substantially reduces device power


    Original     		PDF CAT25640 CAT25C64 64K-Bit CAT25C64 64-byte 25C64li 25C64VI marking code VV transistors 25C64 AEC-Q100 AN10 CAT25640 25C64V

    bq4010

    Abstract: bq4010Y bq4010YMA-85N
    Text: bq4010/bq4010Y 8Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		PDF bq4010/bq4010Y bq4010 536-bit 28-pin 10-year bq4010Y bq4010YMA-85N

    bq4010

    Abstract: bq4010MA bq4010Y bq4010YMA
    Text: bq4010/bq4010Y 8Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		PDF bq4010/bq4010Y bq4010 536-bit 28-pin 10-year bq4010MA bq4010Y bq4010YMA

    Untitled

    Abstract: No abstract text available
    Text: CAT25640 64-Kb SPI Serial CMOS EEPROM Description The CAT25640 is a 64−Kb Serial CMOS EEPROM device internally organized as 8Kx8 bits. This features a 64−byte page write buffer and supports the Serial Peripheral Interface SPI protocol. The device is enabled through a Chip Select (CS) input. In addition, the


    Original     		PDF CAT25640 64-Kb 64-byte 751BD 517AX 511AK CAT25640/D

    100uF capacitor

    Abstract: 12C68 DS1225Y STK12C68
    Text: Using the STK12C68 Using the SIMTEK STK12C68 AutoStore 8K x 8 High Performance Nonvolatile Static RAM Simtek Corporation’s STK12C68 is a fast static RAM backed by a nonvolatile EEPROM shadow memory in an industry standard 28 pin package. The SRAM portion of memory operates similarly to other 8Kx8 fast


    Original     		PDF STK12C68 STK12C68 DS1225Y 12C68 100uF capacitor 12C68

    Untitled

    Abstract: No abstract text available
    Text: bq4010/bq4010Y 8Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		PDF bq4010/bq4010Y 28-pin 10-year bq4010 536-bit

    25640 AN

    Abstract: 25640 AEC-Q100 CAT25640 MO-229 MS-001
    Text: CAT25640 64-Kb SPI Serial CMOS EEPROM FEATURES DESCRIPTION „ 10 MHz SPI compatible The CAT25640 is a 64-Kb Serial CMOS EEPROM device internally organized as 8Kx8 bits. This features a 64-byte page write buffer and supports the Serial Peripheral Interface SPI protocol. The device is


    Original     		PDF CAT25640 64-Kb CAT25640 64-byte MD-1128 25640 AN 25640 AEC-Q100 MO-229 MS-001

    TTE24C

    Abstract: No abstract text available
    Text: 64K-bit/32K-bit 2-Wire Serial CMOS EEPROM TTE24C32/TTE24C64 Preliminary Description The TTE24C32/TTE24C64 is an electrically erasable PROM device that uses the standard 2-wire interface for communications. The TTE24C32/TTE24C64 contains a memory array of 32K-bits 4Kx8 and 64K-bits (8Kx8) repectively, and


    Original     		PDF 64K-bit/32K-bit TTE24C32/TTE24C64 TTE24C32/TTE24C64 32K-bits 64K-bits TE24C32/TTE24C64 TTE24C

    80C31 instruction set

    Abstract: BOC31 80C31 F800H MCS-51 80c31 application 685C31
    Text: '<Teï r er~>& EDH 685C31 EEPROM jjPak 8/12 MHz The fu tu re . . . today. PRELIMINARY Microcomputer 80C31 Based, CMOS 8Kx8 EEPROM plus 8Kx8 SRAM 0> 005612 Features The EDH 685C31 ^PAK from EDI is a new series of high density microcomputer modules based on the industry-standard 80C31 single


    OCR Scan     		PDF 685C31 80C31 80C31, 685C31-8CMHR 685C31 -12CMH GU185RF 80C31 instruction set BOC31 F800H MCS-51 80c31 application

    UPAK

    Abstract: static ram 8KX8 sram 8kx8 memory map
    Text: pS. & • t<b EDH 685C31 ^E D I EEPROM |iPak 8/12 MHz The fu tu re . . . today. PRELIMINARY Microcomputer 80C31 Based, CMOS 8Kx8 EEPROM plus 8Kx8 SRAM O 005612 6 L Features The EDH 685C31 pPAK from EDI is a new series of high density microcomputer modules


    OCR Scan     		PDF 685C31 80C31 685C31 80C31, on85C31-8CMHR 685C31-12CMHR UPAK static ram 8KX8 sram 8kx8 memory map

    Untitled

    Abstract: No abstract text available
    Text: RJ1 Prelim inary U N I T R O O E 8Kx8 ZEROPOWER NVSRAM Features General Description > Integrated ultra low-power SRAM, power-fail control circuit, and battery The bq4310Y ZEROPOWER NVSRAM is a 8Kx8 nonvolatile static RAM. The monolithic chip is available in the SNAPHAT package


    OCR Scan     		PDF bq431OY bq4310Y 28-pin, 330-mil 4833YPD bg4310YSH- bq48SH

    Untitled

    Abstract: No abstract text available
    Text: bq4010/bq4010Y BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >- Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy


    OCR Scan     		PDF bq4010/bq4010Y bq4010 536-bit 28-pin bq4010YMA-85N -150N. bq4010

    Untitled

    Abstract: No abstract text available
    Text: bq4010/bq401OY BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description ► Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy


    OCR Scan     		PDF 4010/b bq4010 536-bit bq4010YMA-70N bq4010-70 bq4010/bq4010Y bq401Q 150ns 200ns

    Untitled

    Abstract: No abstract text available
    Text: bq4010/bq4010Y BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >• D ata retention in the absence of power The CMOS bq4010 is a nonvolatile 65,636-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy


    OCR Scan     		PDF bq4010/bq4010Y bq4010 636-bit 28-pin 10-year o010-70 bq4010Y-70 bq4010YMA-70N bq4010

    Q4010

    Abstract: No abstract text available
    Text: bq4010/bq401 OY BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >• D ata retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy


    OCR Scan     		PDF bq4010/bq401 bq4010 536-bit bq4010/bq4010Y q4010

    bq4010Y-xxxN

    Abstract: No abstract text available
    Text: bq4010/bq4010Y BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >• Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy


    OCR Scan     		PDF bq4010/bq4010Y bq4010 536-bit bq4010YMA-85N -150N. bq4010-70 bq4010Y-70 bq4010YMA-70N bq4010Y-xxxN

    Untitled

    Abstract: No abstract text available
    Text: bq4010/bq4010Y BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >• D ata retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy


    OCR Scan     		PDF bq4010/bq4010Y bq4010 536-bit bq4010YMA-85N -150N. bq4010

    Untitled

    Abstract: No abstract text available
    Text: bq4010/bq4010Y BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >- D ata retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy


    OCR Scan     		PDF bq4010/bq4010Y bq4010 536-bit lithi50N. bq4010-70 bq4010Y-70 bq4010YMA-70N bq4010 bq401