Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    BQ4010YMA Search Results

    SF Impression Pixel

    BQ4010YMA Price and Stock

    Rochester Electronics LLC BQ4010YMA-85

    IC NVSRAM 64KBIT PARALLEL 28DIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BQ4010YMA-85 Tube 18
    • 1 -
    • 10 -
    • 100 $17.57
    • 1000 $17.57
    • 10000 $17.57
    		Buy Now

    Texas Instruments BQ4010YMA-85

    IC NVSRAM 64KBIT PARALLEL 28DIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BQ4010YMA-85 Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Verical BQ4010YMA-85 94 18
    • 1 -
    • 10 -
    • 100 $19.85
    • 1000 $17.95
    • 10000 $17.95
    		Buy Now
    Rochester Electronics BQ4010YMA-85 111 1
    • 1 $16.89
    • 10 $16.89
    • 100 $15.88
    • 1000 $14.36
    • 10000 $14.36
    		Buy Now

    Texas Instruments BQ4010YMA-70

    IC NVSRAM 64KBIT PARALLEL 28DIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BQ4010YMA-70 Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Verical BQ4010YMA-70 35 24
    • 1 -
    • 10 -
    • 100 $14.8875
    • 1000 $13.4625
    • 10000 $13.4625
    		Buy Now
    Rochester Electronics BQ4010YMA-70 35 1
    • 1 $12.67
    • 10 $12.67
    • 100 $11.91
    • 1000 $10.77
    • 10000 $10.77
    		Buy Now

    Rochester Electronics LLC BQ4010YMA-70

    IC NVSRAM 64KBIT PARALLEL 28DIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BQ4010YMA-70 Tube 23
    • 1 -
    • 10 -
    • 100 $13.18
    • 1000 $13.18
    • 10000 $13.18
    		Buy Now

    Texas Instruments BQ4010YMA-150

    IC NVSRAM 64KBIT PARALLEL 28DIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BQ4010YMA-150 Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Vyrian BQ4010YMA-150 94
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Find more BQ4010YMA price and stock on Findchips.com

    BQ4010YMA Datasheets (28)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BQ4010YMA-150 Texas Instruments 8Kx8 Nonvolatile SRAM, 10% Voltage Tolerance 28-DIP MODULE 0 to 70 Original PDF
    bq4010YMA-150 Texas Instruments NVRAM, NVSRAM, Parallel, 5V Supply Voltage, 28-DIP Module Original PDF
    bq4010YMA-150 Texas Instruments 8k x 8 Nonvolatile SRAM Original PDF
    BQ4010YMA-150 Texas Instruments 8Kx8 Nonvolatile SRAM Original PDF
    BQ4010YMA-150N Texas Instruments 8Kx8 Nonvolatile SRAM, 10% Voltage Tolerance 28-DIP MODULE -40 to 85 Original PDF
    bq4010YMA-150N Texas Instruments NVRAM, NVSRAM, Parallel, 5V Supply Voltage, 28-DIP Module Original PDF
    BQ4010YMA-150N Texas Instruments 8Kx8 Nonvolatile SRAM Original PDF
    BQ4010YMA-200 Texas Instruments 8Kx8 Nonvolatile SRAM, 10% Voltage Tolerance 28-DIP MODULE 0 to 70 Original PDF
    bq4010YMA-200 Texas Instruments NVRAM, NVSRAM, Parallel, 5V Supply Voltage, 28-DIP Module Original PDF
    BQ4010YMA-200 Texas Instruments 8Kx8 Nonvolatile SRAM Original PDF
    BQ4010YMA-200N Texas Instruments BQ4010 - IC 8K X 8 NON-VOLATILE SRAM, 200 ns, DMA28, Static RAM Original PDF
    bq4010YMA-200N Texas Instruments NVRAM, NVSRAM, Parallel, 5V Supply Voltage, 28-DIP Module Original PDF
    BQ4010YMA-200N Texas Instruments 8Kx8 Nonvolatile SRAM Original PDF
    bq4010YMA-70 Texas Instruments NVRAM, NVSRAM, Parallel, 5V Supply Voltage, 28-DIP Module Original PDF
    BQ4010YMA-70 Texas Instruments 8Kx8 Nonvolatile SRAM, 10% Voltage Tolerance 28-DIP MODULE 0 to 70 Original PDF
    BQ4010YMA-70 Texas Instruments 8KX8 NONVOLATILE SRAM Original PDF
    bq4010YMA-70N Texas Instruments NVRAM, NVSRAM, Parallel, 5V Supply Voltage, 28-DIP Module Original PDF
    bq4010YMA-70N Texas Instruments 8k x 8 Nonvolatile SRAM Original PDF
    BQ4010YMA-70N Texas Instruments 8Kx8 Nonvolatile SRAM, 10% Voltage Tolerance 28-DIP MODULE -40 to 85 Original PDF
    BQ4010YMA-70N Texas Instruments 8KX8 NONVOLATILE SRAM Original PDF

    BQ4010YMA Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: bq4010/bq4010Y 8Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		bq4010/bq4010Y 28-pin 10-year bq4010 536-bit PDF

    bq4010

    Abstract: bq4010LY bq4010MA-150 bq4010MA-200 bq4010MA-70 bq4010MA-85 bq4010Y
    Text: Not Recommended For New Designs bq4010/Y/LY www.ti.com SLUS116A – MAY 1999 – REVISED JUNE 2007 8 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During


    Original     		bq4010/Y/LY SLUS116A 28-Pin 536-bit bq4010 bq4010LY bq4010MA-150 bq4010MA-200 bq4010MA-70 bq4010MA-85 bq4010Y PDF

    Untitled

    Abstract: No abstract text available
    Text: bq4010/bq4010Y 8Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		bq4010/bq4010Y bq4010 536-bit 28-pin 10-year PDF

    Untitled

    Abstract: No abstract text available
    Text: bq4010/Y/LY www.ti.com SLUS116A – MAY 1999 – REVISED JUNE 2007 8 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During Power-up/Power-down Cycles


    Original     		bq4010/Y/LY SLUS116A 28-Pin 536-bit PDF

    Untitled

    Abstract: No abstract text available
    Text: Not Recommended For New Designs bq4010/Y/LY www.ti.com SLUS116A – MAY 1999 – REVISED JUNE 2007 8 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During


    Original     		bq4010/Y/LY SLUS116A 28-Pin 536-bit PDF

    bq4010

    Abstract: bq4010Y bq4010YMA-85N
    Text: bq4010/bq4010Y 8Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		bq4010/bq4010Y bq4010 536-bit 28-pin 10-year bq4010Y bq4010YMA-85N PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS PDF

    Untitled

    Abstract: No abstract text available
    Text: bq4010/Y/LY www.ti.com SLUS116A – MAY 1999 – REVISED JUNE 2007 8 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During Power-up/Power-down Cycles


    Original     		bq4010/Y/LY SLUS116A 28-Pin 536-bit PDF

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2 PDF

    bq4010

    Abstract: bq4010LY bq4010Y DIP-28
    Text: bq4010/Y/LY www.ti.com SLUS116A – MAY 1999 – REVISED APRIL 2007 8 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During Power-up/Power-down Cycles


    Original     		bq4010/Y/LY SLUS116A 28-Pin 34-Pin bq401BATCAP 536-bit bq4010 bq4010LY bq4010Y DIP-28 PDF

    bq4010

    Abstract: bq4010Y bq4010YMA-85N
    Text: bq4010/bq4010Y 8Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		bq4010/bq4010Y bq4010 536-bit 28-pin 10-year bq4010Y bq4010YMA-85N PDF

    bq4010

    Abstract: bq4010MA bq4010Y bq4010YMA
    Text: bq4010/bq4010Y 8Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		bq4010/bq4010Y bq4010 536-bit 28-pin 10-year bq4010MA bq4010Y bq4010YMA PDF

    Untitled

    Abstract: No abstract text available
    Text: Not Recommended For New Designs bq4010/Y/LY www.ti.com SLUS116A – MAY 1999 – REVISED JUNE 2007 8 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During


    Original     		bq4010/Y/LY SLUS116A 28-Pin 536-bit PDF

    Untitled

    Abstract: No abstract text available
    Text: bq4010/Y/LY www.ti.com SLUS116A – MAY 1999 – REVISED JUNE 2007 8 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During Power-up/Power-down Cycles


    Original     		bq4010/Y/LY SLUS116A 28-Pin 536-bit PDF

    BQ4010YMA-150N

    Abstract: BQ4010YMA-200
    Text: bq4010/Y/LY www.ti.com SLUS116A – MAY 1999 – REVISED JUNE 2007 8 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During Power-up/Power-down Cycles


    Original     		bq4010/Y/LY SLUS116A 28-Pin 536-bit BQ4010YMA-150N BQ4010YMA-200 PDF

    ae29F2008

    Abstract: ATMEL eeprom 2816A rom AE29f2008 HN462732G D27C64 AT27C64 ASD AE29F2008 d27C128 Toshiba tmm24128 HN2764
    Text: SALES/INFORMATION HOTLINE: +44 0 1226 767404 GLV32 DEVICE SUPPORT LIST ICE Technology Ltd August 30 2001 DIP devices of 32 pins or less are supported without the need of ANY adapter. Adapter number (see adapter list). Required for PLCC, SOIC or greater than 48 pins.


    Original     		GLV32 Am27C010 Am27C020 Am27C128 Am27C512 Am27C64 Am27H256 Am27LV010 Am27LV010B Am27LV020 ae29F2008 ATMEL eeprom 2816A rom AE29f2008 HN462732G D27C64 AT27C64 ASD AE29F2008 d27C128 Toshiba tmm24128 HN2764 PDF

    SGS-Thomson cross reference

    Abstract: 256K-byte SRAM 2M-byte SRAM benchmarq HANBit HMN328D 512K-byte NVSRAM HMN12816D HMN1288D
    Text: Non – Volatile SRAM Module HANBit nvSRAM Module range in density from 16kbit to 4Mbyte with accesstimes of 70 to 120ns, data widths from x8 x 16, also 8Mbyte is under developing. nvSRAM Module use extremely low standby current CMOS SRAMs, coupled with small lithium cells to provide non-volatility without long


    Original     		16kbit 120ns, 1024k 2048k 4096k HMN28D HMN88D SGS-Thomson cross reference 256K-byte SRAM 2M-byte SRAM benchmarq HANBit HMN328D 512K-byte NVSRAM HMN12816D HMN1288D PDF

    Untitled

    Abstract: No abstract text available
    Text: bq4010/bq4010Y 8Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		bq4010/bq4010Y 28-pin 10-year bq4010 536-bit BQ4010MA-85 PDF

    Untitled

    Abstract: No abstract text available
    Text: bq4010/bq401 OY UNITRODE- 8Kx8 Nonvolatile SRAM Features General Description > D ata retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy


    OCR Scan     		bq4010/bq401 bq4010 536-bit bq4010YMA-70N bq4010-70 bq4010/bq4010Y bq401Q 150ns 200ns PDF

    Untitled

    Abstract: No abstract text available
    Text: h bq4010/bq4010Y BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description ► Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy


    OCR Scan     		bq4010/bq4010Y bq4010 536-bit 28-pin 10-year bq4010YMA-85N -150N. bq4010 PDF

    Untitled

    Abstract: No abstract text available
    Text: BENCHHARÛ MICROELEC bflE D • 137afln 0Q01S11 TTS H B E N bq4010/bq4010Y BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >■ D ata retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral


    OCR Scan     		137afln 0Q01S11 bq4010/bq4010Y bq4010 536-bit 28-pin 10-year bq4010YMA-85N -150N. PDF

    Untitled

    Abstract: No abstract text available
    Text: bq4010/bq4010Y BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >- D ata retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy


    OCR Scan     		bq4010/bq4010Y bq4010 536-bit lithi50N. bq4010-70 bq4010Y-70 bq4010YMA-70N bq4010 bq401 PDF

    Untitled

    Abstract: No abstract text available
    Text: bq4010/bq4010Y BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >- Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy


    OCR Scan     		bq4010/bq4010Y bq4010 536-bit 28-pin bq4010YMA-85N -150N. bq4010 PDF

    Untitled

    Abstract: No abstract text available
    Text: b q 4 0 1 0 /b q 4 0 1 0 Y BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >- Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy


    OCR Scan     		bq4010 536-bit 28-pin 10-year toleran70 bq4010Y-70 bq4010YMA-70N 1991B. bq4010 PDF