Untitled
Abstract: No abstract text available
Text: RFVC1802C RFVC1802C CONNECTORIZED MODULE WIDEBAND MMIC VCO WITH BUFFER AMPLIFIER, 4GHz TO 8GHz CONNECTORIZED MODULE WIDEBAND MMIC VCO WITH BUFFER AMPLIFIER, 4GHz TO 8GHz Package: Module, 3 Connectors, 22.86mmx22.86mmx13.97mm Features 4GHz to 8GHz VCO
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RFVC1802C
RFVC1802C
86mmx22
86mmx13
-74dBc/Hz
10kHz
-99dBc/Hz
100kHz
DS110330
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t40c
Abstract: ma5250
Text: RFVC1802 RFVC1802 Wideband MMIC VCO with Buffer Amplifier, 4GHz to 8GHz WIDEBAND MMIC VCO WITH BUFFER AMPLIFIER, 4GHZ TO 8GHZ Package: QFN, 4mmx4mmx1.1mm Features Wideband Performance POUT =+4.0dBm Typical External Resonator Not Required Single Bias Supply: +5V at 53mA
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RFVC1802
RFVC1802
-99dBc/Hz
100kHz
DS110829
t40c
ma5250
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12GHZ VCO
Abstract: No abstract text available
Text: RFVC1800C RFVC1800C Connectorized Module Wideband MMIC VCO with Buffer Amp, 8 GHz to 12GHz CONNECTORIZED MODULE WIDEBAND MMIC VCO WITH BUFFER AMP, 8GHz TO 12GHz Package: Module, 3-Connectors, 22.86mmx22.86mmx13.97mm Features 8GHz to 12GHz VCO
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RFVC1800C
12GHz
RFVC1800C
86mmx22
86mmx13
12GHz
-66dBc/Hz
10kHz
-93dBc/Hz
12GHZ VCO
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8GHz oscillator
Abstract: RFVC1802 VCO BUFFER AMPLIFIER 8GHz RFVC RFVC1802PCK-410 RFVC1802S rfmd mmic QFN57
Text: RFVC1802 RFVC1802 Wideband MMIC VCO with Buffer Amplifier, 4GHz to 8GHz WIDEBAND MMIC VCO WITH BUFFER AMPLIFIER, 4GHZ TO 8GHZ Package: QFN, 4mmx4mmx1.1mm Frequency and Output Power versus V TUNE V S =5V, T=25°C 10 7 Freq Evaluatio n Board Features Wideband Performance
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RFVC1802
-99dBc/Hz
100kHz
DS100615
8GHz oscillator
RFVC1802
VCO BUFFER AMPLIFIER 8GHz
RFVC
RFVC1802PCK-410
RFVC1802S
rfmd mmic
QFN57
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Untitled
Abstract: No abstract text available
Text: [AK1548] AK1548 8GHz Low Noise Integer-N Frequency Synthesizer 1. Overview The AK1548 is an Integer-N PLL Phase Locked Loop frequency synthesizer, covering a wide range of frequency from 1GHz to 8GHz. Consisting of a highly accurate charge pump, a reference divider, a programmable divider
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AK1548]
AK1548
AK1548
MS1364-E-00
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AK1548
Abstract: No abstract text available
Text: [AK1548] AK1548 8GHz Low Noise Integer-N Frequency Synthesizer 1. Overview The AK1548 is an Integer-N PLL Phase Locked Loop frequency synthesizer, covering a wide range of frequency from 1GHz to 8GHz. Consisting of a highly accurate charge pump, a reference divider, a programmable divider
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AK1548]
AK1548
AK1548
24-VSOP
AK2346A
AK2347B
AK2347A
24-QFN
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D2120
Abstract: No abstract text available
Text: [AK1548] AK1548 8GHz Low Noise Integer-N Frequency Synthesizer 1. Overview The AK1548 is an Integer-N PLL Phase Locked Loop frequency synthesizer, covering a wide range of frequency from 1GHz to 8GHz. Consisting of a highly accurate charge pump, a reference divider, a programmable divider
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AK1548]
AK1548
AK1548
MS1364-E-00
D2120
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Untitled
Abstract: No abstract text available
Text: RFVC1800 RFVC1800 Wideband MMIC VCO with Buffer Amplifier 8GHz to 12GHz RFMD’s RFVC1800 wideband voltage controlled oscillator is a GaAs InGaP HBT MMIC with integrated VCO core and RF output buffer. The part operates from a single +5V supply for circuit bias and 0V to +13V VTUNE for frequency control. The
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RFVC1800
12GHz
RFVC1800
-93dBc/Hz
100kHz
DS1310002
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Untitled
Abstract: No abstract text available
Text: RFVC1802 RFVC1802 Wideband MMIC VCO with Buffer Amplifier 4GHz to 8GHz RFMD’s RFVC1802 wideband voltage controlled oscillator is a GaAs InGaP HBT MMIC with integrated VCO core and RF output buffer. The part operates from a single +5V supply for circuit bias and 0V to +18V VTUNE for frequency control. The
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RFVC1802
RFVC1802
-99dBc/Hz
100kHz
DS130913
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AK1548
Abstract: AK2360A
Text: [AK1548] AK1548 8GHz Low Noise Integer-N Frequency Synthesizer 1. 概要 AK1548 は 1GHz から 8GHz までの広い帯域をカバーする Integer-N 型の周波数シンセサイザです。精度の高いチャージポンプ レファレンス分周器、プログラマブルデバイダおよびデュアルモジュラスプリスケーラ P/P+1 で構成され、高性能、低雑音および小
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AK1548]
AK1548
AK2347B
AK2347A
24-VSOP
24-QFN
AK2363
AK1548
AK2360A
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Untitled
Abstract: No abstract text available
Text: RFVC1802 RFVC1802 Wideband MMIC VCO with Buffer Amplifier 4GHz to 8GHz RFMD’s RFVC1802 wideband voltage controlled oscillator is a GaAs InGaP HBT MMIC with integrated VCO core and RF output buffer. The part operates from a single +5V supply for circuit bias and 0V to +18V VTUNE for frequency control. The
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RFVC1802
RFVC1802
-99dBc/Hz
100kHz
DS140506
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Untitled
Abstract: No abstract text available
Text: RFVC1800 RFVC1800 Wideband MMIC VCO with Buffer Amplifier 8GHz to 12GHz RFMD’s RFVC1800 wideband voltage controlled oscillator is a GaAs InGaP HBT MMIC with integrated VCO core and RF output buffer. The part operates from a single +5V supply for circuit bias and 0V to +13V VTUNE for frequency control. The
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RFVC1800
12GHz
RFVC1800
-93dBc/Hz
100kHz
DS140501
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rfvc1800sq
Abstract: No abstract text available
Text: RFVC1800 RFVC1800 WIDEBAND MMIC VCO WITH BUFFER AMPLIFIER, 8GHz to 12GHz Package: 4mmx4mmx1.1mm Product Description Features RFMD’s RFVC1800 wideband Voltage Controlled Oscillator is a GaAs InGaP HBT MMIC with integrated VCO core and RF output buffer. The part operates from a single +5V supply for circuit bias and 0 to +13V Vtune for frequency control. The
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RFVC1800
12GHz
RFVC1800
-93dBc/Hz
100kHz
DS110829
RFVC1800S2
rfvc1800sq
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Untitled
Abstract: No abstract text available
Text: RFUV1003 RFUV1003 12GHZ TO 16GHZ GAAS MMIC IQ UPCONVERTER Package: QFN, 32-Pin, 5mm x 5mm x 0.95mm N/C GND 32 Features RF Frequency: 12GHz to16GHz LO Frequency: 8GHz to 20GHz IF Frequency: DC to 4GHz Conversion Gain Max : 23dB
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RFUV1003
12GHZ
16GHZ
32-Pin,
12GHz
to16GHz
20GHz
-10dB
28dBm
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RFUV1003
Abstract: RFUV1003PCK-410 rfuv-1003
Text: RFUV1003 RFUV1003 12GHZ TO 16GHZ GAAS MMIC IQ UPCONVERTER Package: QFN, 32-Pin, 5mm x 5mm x 0.95mm N/C GND 32 Features RF Frequency: 12GHz to16GHz LO Frequency: 8GHz to 20GHz IF Frequency: DC to 4GHz Conversion Gain Max : 23dB
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RFUV1003
12GHZ
16GHZ
32-Pin,
to16GHz
20GHz
-10dB
28dBm
RFUV1003
RFUV1003PCK-410
rfuv-1003
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MGF1801B
Abstract: Microwave power GaAs
Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGF1801B MICROWAVE POWER GaAs FET DESCRIPTION The MGF1801B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic Unit:millimeters
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MGF1801B
MGF1801B,
23dBm
MGF1801B
Microwave power GaAs
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k 1413 FET
Abstract: MGF1601B MGF1601
Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGF1601B MICROWAVE POWER GaAs FET DESCRIPTION The MGF1601B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic Unit:millimeters
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MGF1601B
MGF1601B,
k 1413 FET
MGF1601B
MGF1601
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k 1413 FET
Abstract: mitsubishi microwave MGF1801B MGF1801 MGF1
Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGF1801B MICROWAVE POWER GaAs FET DESCRIPTION The MGF1801B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic Unit:millimeters
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MGF1801B
MGF1801B,
23dBm
June/2004
k 1413 FET
mitsubishi microwave
MGF1801B
MGF1801
MGF1
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MGF1601B
Abstract: mitsubishi microwave MGF1601
Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGF1601B MICROWAVE POWER GaAs FET DESCRIPTION The MGF1601B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic Unit:millimeters
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MGF1601B
MGF1601B,
MGF1601B
mitsubishi microwave
MGF1601
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MGF1601B
Abstract: MGF1601
Text: < High-power GaAs FET small signal gain stage > MGF1601B S to X BAND / 0.15W non - matched DESCRIPTION The MGF1601B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures
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MGF1601B
MGF1601B,
100mA
MGF1601B
MGF1601
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ec6519
Abstract: No abstract text available
Text: JC6519/EC6519 INFORMATION C BAND P O W E R FET G a A s F I E L D E F F E C T T R A N S I S T O R FEATURES • • • • • 30dBm output power at 1dB gain compression High associated gain: 9dB @8GHz Low source inductance High power added efficiency: 30% @8GHz
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JC6519/EC6519
30dBm
BMH77p
TC6519-A2A/00
BMH209
TC6519-A4A/00
EC6519-99A/00.
TC6519
250mA
TC6519/EC6519
ec6519
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Untitled
Abstract: No abstract text available
Text: TC5735 PRELIM INARY INFORM ATION C BAND POWER FET G a A s F I E L D E F F E C T T R A N S I S T O R FEATURES • • • • 28dBm output power at 1dB gain compression High associated gain : 10dB @8GHz Low thermal resistance Low source inductance • High power added efficiency : 35% @8GHz
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TC5735
28dBm
BMH77p
TC5735-A2A/00
TC5735
160mA
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGF1801B MICROWAVE POWER GaAs FET DESCRIPTION The MGF1801B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package
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MGF1801B
MGF1801B,
23dBm
100mA
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MGF1601
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGF1601B MICROWAVE POWER GaAs FET DESCRIPTION OUTLINE DRAWING U n itm illim e te rs The MGF1601B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The
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MGF1601B
MGF1601B,
100mA
Pro54
MGF1601
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