Untitled
Abstract: No abstract text available
Text: M32C/8A Group M32C/8A SINGLE-CHIP 16/32-BIT CMOS MICROCOMPUTER 1. REJ03B0213-0100 Rev.1.00 Apr 01, 2007 Overview 1.1 Features The M32C/8A Group (M32C/8A) is a single-chip control MCU, fabricated using high-performance silicon gate CMOS technology, embedding the M32C/80 Series CPU core. The M32C/8A Group (M32C/8A) is housed in 100pin plastic molded LQFP package.
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M32C/8A
M32C/8A)
16/32-BIT
REJ03B0213-0100
M32C/80
100pin
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gp8nc60
Abstract: No abstract text available
Text: STGB8NC60K - STGD8NC60K STGP8NC60K N-channel 600V - 8A - D2PAK / DPAK / TO-220 Short circuit rated PowerMESH IGBT Features Type VCES VCE sat Typ @25°C IC @100°C STGB8NC60K 600V 2.2V 8A STGD8NC60K 600V 2.2V 8A STGP8NC60K 600V 2.2V 8A • Lower on voltage drop (Vcesat)
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STGB8NC60K
STGD8NC60K
STGP8NC60K
O-220
O-220
gp8nc60
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GP8NC60KD
Abstract: gp8nc60 gd8nc60kd STGP8NC60KD GB8NC60KD
Text: STGB8NC60KD - STGD8NC60KD STGP8NC60KD N-channel 600V - 8A - D2PAK / DPAK / TO-220 Short circuit rated PowerMESH IGBT Features Type VCES VCE sat Typ @25°C IC @100°C STGB8NC60KD 600V 2.2V 8A STGD8NC60KD 600V 2.2V 8A STGP8NC60KD 600V 2.2V 8A • Lower on voltage drop (Vcesat)
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STGB8NC60KD
STGD8NC60KD
STGP8NC60KD
O-220
O-220
GP8NC60KD
gp8nc60
gd8nc60kd
STGP8NC60KD
GB8NC60KD
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gp8nc60
Abstract: GD8NC60K GB8NC60K STGP8NC60K GP8NC60K JESD97 STGB8NC60K STGD8NC60K
Text: STGB8NC60K - STGD8NC60K STGP8NC60K N-channel 600V - 8A - D2PAK / DPAK / TO-220 Short circuit rated PowerMESH IGBT Features Type VCES VCE sat Typ @25°C IC @100°C STGB8NC60K 600V 2.2V 8A STGD8NC60K 600V 2.2V 8A STGP8NC60K 600V 2.2V 8A • Lower on voltage drop (Vcesat)
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STGB8NC60K
STGD8NC60K
STGP8NC60K
O-220
STGB8NC60K
gp8nc60
GD8NC60K
GB8NC60K
STGP8NC60K
GP8NC60K
JESD97
STGD8NC60K
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W9NK90Z
Abstract: p9nk90 W9NK90Z equivalent STP9NK90Z F9NK90Z P9NK90Z STB9NK90Z STF9NK90Z STW9NK90Z MOSFET 900V TO-220
Text: STB9NK90Z - STFPNK90Z STP9NK90Z - STW9NK90Z N-channel 900V - 1.1Ω - 8A - TO-220 /FP- D2PAK - TO-247 Zener-protected superMESHTM MOSFET General features Type VDSS RDS on ID Pw STB9NK90Z 900V <1.3Ω 8A 160 W 3 3 STW9NK90Z 900V <1.3Ω 8A 160 W STP9NK90Z
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STB9NK90Z
STFPNK90Z
STP9NK90Z
STW9NK90Z
O-220
O-247
STB9NK90Z
STP9NK90Z
STF9NK90Z
W9NK90Z
p9nk90
W9NK90Z equivalent
F9NK90Z
P9NK90Z
STF9NK90Z
STW9NK90Z
MOSFET 900V TO-220
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P8NM50FP
Abstract: P8NM50 JESD97 STP8NM50 STP8NM50FP
Text: STP8NM50 STP8NM50FP N-channel 550V @ Tjmax - 0.7Ω - 8A - TO-220 - TO-220FP MDmesh Power MOSFET General features Type VDSS @Tjmax RDS(on) STP8NM50 550V <0.8Ω 8A STP8NM50FP 550V <0.8Ω 8A (1) ID 1. Limited only by maximum temperature allowed 3 1 •
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STP8NM50
STP8NM50FP
O-220
O-220FP
O-220
P8NM50FP
P8NM50
JESD97
STP8NM50
STP8NM50FP
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W9NK90Z equivalent
Abstract: P9NK90 P9NK90Z mosfet 8A 900V TO-220
Text: STB9NK90Z - STF9NK90Z STP9NK90Z - STW9NK90Z N-channel 900V - 1.1Ω - 8A - TO-220 /FP- D2PAK - TO-247 Zener-protected superMESHTM MOSFET General features Type VDSS RDS on ID Pw STB9NK90Z 900V <1.3Ω 8A 160 W 3 3 STW9NK90Z 900V <1.3Ω 8A 160 W STP9NK90Z
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STB9NK90Z
STF9NK90Z
STP9NK90Z
STW9NK90Z
O-220
O-247
STW9NK90Z
STF9NK90Z
W9NK90Z equivalent
P9NK90
P9NK90Z
mosfet 8A 900V TO-220
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Untitled
Abstract: No abstract text available
Text: STP8NM50 STP8NM50FP N-channel 550V @ Tjmax - 0.7Ω - 8A - TO-220 - TO-220FP MDmesh Power MOSFET General features Type VDSS @Tjmax RDS(on) STP8NM50 550V <0.8Ω 8A STP8NM50FP 550V <0.8Ω 8A (1) ID 1. Limited only by maximum temperature allowed 100% avalanche tested
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STP8NM50
STP8NM50FP
O-220
O-220FP
O-220
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FFP08H60S
Abstract: FFP08H60STU
Text: FFP08H60S Hyperfast 2 Rectifier tm Features 8A, 600V Hyperfast 2 Rectifier • High Speed Switching trr=45ns(Max. @ IF=8A ) The FFP08H60S is hyperfast2 rectifier (trr=45ns(Max.) @ IF=8A). it has half the recovery time of ultrafast rectifier and is silicon nitride passivated ion-implanted epitaxial planar construction.
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FFP08H60S
FFP08H60S
FFP08H60STU
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Untitled
Abstract: No abstract text available
Text: STB8NM60D STP8NM60D N-CHANNEL 600V - 0.9Ω - 8A - TO-220/D2PAK Fast Diode MDmesh Power MOSFET General features Type VDSS RDS on ID PTOT STB8NM60D STP8NM60D 600V 600V < 1.0Ω < 1.0Ω 8A 8A 100W 100W • High dv/dt and avalanche capabilities ■ 100% avalanche rated
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STB8NM60D
STP8NM60D
O-220/D2PAK
O-220
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B8NM60D
Abstract: JESD97 STB8NM60D STP8NM60D ZVS phase-shift converters
Text: STB8NM60D STP8NM60D N-CHANNEL 600V - 0.9Ω - 8A - TO-220/D2PAK Fast Diode MDmesh Power MOSFET General features Type VDSS RDS on ID PTOT STB8NM60D STP8NM60D 600V 600V < 1.0Ω < 1.0Ω 8A 8A 100W 100W • High dv/dt and avalanche capabilities ■ 100% avalanche rated
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STB8NM60D
STP8NM60D
O-220/D2PAK
O-220
B8NM60D
JESD97
STB8NM60D
STP8NM60D
ZVS phase-shift converters
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P8NM50FP
Abstract: P8NM50
Text: STP8NM50 STP8NM50FP N-channel 550V @ Tjmax - 0.7Ω - 8A - TO-220 - TO-220FP MDmesh Power MOSFET General features Type VDSS @Tjmax RDS(on) STP8NM50 550V <0.8Ω 8A STP8NM50FP 550V <0.8Ω 8A (1) ID 1. Limited only by maximum temperature allowed 3 1 •
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STP8NM50
STP8NM50FP
O-220
O-220FP
STP8NM50FP
O-220
O-220FP
P8NM50FP
P8NM50
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P9NK90
Abstract: w9nk90z W9NK90Z equivalent STP9NK90 P9NK90Z MOSFET 900V TO-220 f9nk90 STW9NK90Z F9NK90Z STB9NK90Z
Text: STB9NK90Z - STF9NK90Z STP9NK90Z - STW9NK90Z N-channel 900V - 1.1Ω - 8A - TO-220 /FP- D2PAK - TO-247 Zener-protected superMESHTM MOSFET Features Type VDSS RDS on ID Pw STB9NK90Z 900V <1.3Ω 8A 160 W 3 3 STW9NK90Z 900V <1.3Ω 8A 160 W STP9NK90Z 900V <1.3Ω
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STB9NK90Z
STF9NK90Z
STP9NK90Z
STW9NK90Z
O-220
O-247
STB9NK90Z
STP9NK90Z
P9NK90
w9nk90z
W9NK90Z equivalent
STP9NK90
P9NK90Z
MOSFET 900V TO-220
f9nk90
STW9NK90Z
F9NK90Z
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FFPF08H60STU
Abstract: FFPF08H60S F08H60S HALF WAVE RECTIFIER CIRCUITS high speed
Text: FFPF08H60S Hyperfast 2 Rectifier tm Features 8A, 600V Hyperfast 2 Rectifier • High Speed Switching trr=45ns(Max. @ IF=8A ) The FFPF08H60S is hyperfast2 rectifier (trr=45ns(Max.) @ IF=8A). it has half the recovery time of ultrafast rectifier and is silicon nitride passivated ion-implanted epitaxial planar construction.
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FFPF08H60S
FFPF08H60S
FFPF08H60STU
F08H60S
HALF WAVE RECTIFIER CIRCUITS high speed
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W9NK90Z
Abstract: W9NK90Z equivalent P9NK90 p9nk90z F9NK90Z STP9NK90Z MOSFET 900V 8A TO-220 L9 Zener STF9NK90Z STW9NK90Z
Text: STP9NK90Z - STF9NK90Z STW9NK90Z N-CHANNEL 900V - 1.1Ω - 8A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESH Power MOSFET TYPE STP9NK90Z STF9NK90Z STW9NK90Z • ■ ■ ■ ■ ■ VDSS RDS on ID Pw 900 V 900 V 900 V < 1.3 Ω < 1.3 Ω < 1.3 Ω 8A 8A
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STP9NK90Z
STF9NK90Z
STW9NK90Z
O-220/TO-220FP/TO-247
STP9NK90Z
O-220
O-220FP
O-247
W9NK90Z
W9NK90Z equivalent
P9NK90
p9nk90z
F9NK90Z
MOSFET 900V 8A TO-220
L9 Zener
STF9NK90Z
STW9NK90Z
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irf634
Abstract: st 393 IRF634FP JESD97 IRF63 irf6
Text: IRF634 IRF634FP N-channel 250V - 0.38Ω - 8A TO-220 /TO-220FP Mesh Overlay Power MOSFET General features Type VDSS RDS on ID IRF634 250V <0.45Ω 8A IRF634FP 250V <0.45Ω 8A 3 • Extremely High dv/dt Capability ■ 100% Avalanche Tested 1 TO-220 3 2
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IRF634
IRF634FP
O-220
/TO-220FP
O-220
O-220FP
irf634
st 393
IRF634FP
JESD97
IRF63
irf6
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LTC3608
Abstract: Lead-Acid 6V
Text: News Release ⎜ www.linear.com 8A, 18V Synchronous Step-Down Regulator Delivers 8A from 7mm x 8mm QFN MILPITAS, CA – August 5, 2008 – The LTC3608 is a high efficiency, synchronous buck regulator that can deliver up to 8A of continuous output current at voltages as low as 0.6V. It
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LTC3608
Lead-Acid 6V
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IRF634
Abstract: IRF634FP JESD97
Text: IRF634 IRF634FP N-channel 250V - 0.38Ω - 8A TO-220 /TO-220FP Mesh Overlay Power MOSFET General features Type VDSS RDS on ID IRF634 250V <0.45Ω 8A IRF634FP 250V <0.45Ω 8A 3 • Extremely High dv/dt Capability ■ 100% Avalanche Tested 1 3 2 1 TO-220
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IRF634
IRF634FP
O-220
/TO-220FP
O-220
O-220FP
IRF634
IRF634FP
JESD97
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Marking 8A
Abstract: MARK 8A Package Marking .8A MMBZ5226B Marking 8A 2 sot23 marking 8A
Text: SEMICONDUCTOR MMBZ5226B MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking 8A No. 1 Item Marking Device Mark 8A MMBZ5226B - - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method
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MMBZ5226B
OT-23
Marking 8A
MARK 8A
Package Marking .8A
MMBZ5226B
Marking 8A 2
sot23 marking 8A
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Untitled
Abstract: No abstract text available
Text: M32C/8A Group RENESAS MCU 1. REJ03B0213-0111 Rev.1.11 Mar 31, 2009 Overview 1.1 Features The M32C/8A Group is a single-chip control MCU, fabricated using high-performance silicon gate CMOS technology, embedding the M32C/80 Series CPU core. The M32C/8A Group is housed in 144-pin and 100-pin
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M32C/8A
REJ03B0213-0111
M32C/80
144-pin
100-pin
16-Mbyte
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M308A0SGP
Abstract: TDZ TR 18 you ad electronics PLQP0100KB-A PLQP0144KA-A FP-100U
Text: M32C/8A Group REJ03B0213-0110 Rev.1.10 Jul 15, 2007 RENESAS MCU 1. Overview 1.1 Features The M32C/8A Group is a single-chip control MCU, fabricated using high-performance silicon gate CMOS technology, embedding the M32C/80 Series CPU core. The M32C/8A Group is housed in 144-pin and 100-pin
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M32C/8A
REJ03B0213-0110
M32C/80
144-pin
100-pin
16-Mbyte
M308A0SGP
TDZ TR 18
you ad electronics
PLQP0100KB-A
PLQP0144KA-A
FP-100U
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Untitled
Abstract: No abstract text available
Text: FFPF08H60S Hyperfast 2 Rectifier tm Features 8A, 600V Hyperfast 2 Rectifier • High Speed Switching rrt =45ns(Max. @ IF=8A ) • High Reverse Voltage and High Reliability • Avalanche Energy Rated The FFPF08H60S is hyperfast2 rectifier (trr=45ns(Max.) @
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FFPF08H60S
FFPF08H60S
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F08S60ST
Abstract: FFPF08S60STTU
Text: STEALTH II Rectifier FFPF08S60ST tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 30ns @ IF = 8A The FFPF08S60ST is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.
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FFPF08S60ST
FFPF08S60ST
F08S60ST
FFPF08S60STTU
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Si7114
Abstract: No abstract text available
Text: MP38874 8A, 21V, 600KHz Step-Down Converter with Synchronizable Gate Driver The Future of Analog IC Technology DESCRIPTION FEATURES The MP38874 is a monolithic step-down switch mode converter with a built in internal power MOSFET. It achieves 8A continuous output
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MP38874
600KHz
MP38874
14-pin
MO-229,
Si7114
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