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    Infineon Technologies AG TLE9893QKW62SXUMA1

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    DigiKey TLE9893QKW62SXUMA1 Reel 1,900
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    TLE9893QKW62SXUMA1 Digi-Reel 1
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    TLE9893QKW62SXUMA1 Cut Tape 1
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    Avnet Americas TLE9893QKW62SXUMA1 Reel 1,900 20 Weeks 1,900
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    Mouser Electronics TLE9893QKW62SXUMA1 500
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    EBV Elektronik TLE9893QKW62SXUMA1 21 Weeks 1,900
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    Vishay Intertechnologies PLT1206Z1893QSTF

    Res Thin Film 1206 189kOhm 0.02% 2/5W ?5ppm/?C Molded T/R - Tape and Reel (Alt: PLT1206Z1893QSTF)
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    Avnet Americas PLT1206Z1893QSTF Reel 19 Weeks 4,000
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    Vishay Intertechnologies PLT1206Z1893QBTF

    Res Thin Film 1206 189kOhm 0.02% 2/5W ?5ppm/?C Molded T/R - Tape and Reel (Alt: PLT1206Z1893QBTF)
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    Avnet Americas PLT1206Z1893QBTF Reel 19 Weeks 4,000
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    Vishay Intertechnologies PLTT0805Z1893QGT1

    PLTT0805 5PPM 189K 0.02% G T1 e4 - Tape and Reel (Alt: PLTT0805Z1893QGT1)
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    Avnet Americas PLTT0805Z1893QGT1 Reel 19 Weeks 1,000
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    Vishay Intertechnologies PLT0805Z1893QSTF

    Res Thin Film 0805 189kOhm 0.02% 1/4W ?5ppm/?C Molded T/R - Tape and Reel (Alt: PLT0805Z1893QSTF)
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    Avnet Americas PLT0805Z1893QSTF Reel 19 Weeks 5,000
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    893Q Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    tle 6261 g

    Abstract: AoL-12L S-108 SEM 238 TLE TSOP CY7B144 CY7B145 B08L
    Text: 4bE D CYPRESS SEMICONDUCTOR • ESfi^bbS 00ab3SG 2 E3CYP 'T-% -Zl> -\ Z_ PRELIMINARY & CYPRESS ill — ^ s ? SEMICONDUCTOR 8K x 8/9 Dual-Port Static RAM with Sem, Int, Busy Features Functional Description • 0.8-mlcron BiCMOS for high per­ formance • High-speed access


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    CY7B144 CY7B145 68-pin CY7B145 G00b403 T-46-23-12 38-00163-B tle 6261 g AoL-12L S-108 SEM 238 TLE TSOP B08L PDF

    cy7c131-55nc

    Abstract: ZT12 CY7C130 CY7C131 CY7C140 CY7C141 IDT7130 IDT7140
    Text: CY7C130/CY7C131 CY7C140/CY7C141 W CYPRESS Features • 0.8-micron CMOS for optimum speed/power • Automatic power-down • TTL compatible • Capable o f withstanding greater than 2001V electrostatic discharge • Fully asynchronous operation • Master CY7C130/CY7C131 easily ex­


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    CY7C130/CY7C131 CY7C140/CY7C141 CY7C140/ CY7C141 CY7C130/ CY7C131; IDT7130 IDT7140 cy7c131-55nc ZT12 CY7C130 CY7C131 CY7C140 CY7C141 IDT7140 PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C130/CY7C131 CY7C140/CY7C141 CYPRESS SEMICONDUCTOR Features Functional Description • 0.8-micron CMOS for optimum speed/power • Automatic power-down • TTL compatible • Capable of withstanding greater than 2001V electrostatic discharge • Fully asynchronous operation


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    CY7C130/CY7C131 CY7C140/CY7C141 CY7C130/CY7C131 CY7C140/ CY7C141 CY7C130/ CY7C131; CY7C130/CY 7C131/CY7C140/ PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7B134 CY7B135 CY7B1342 F# CYPRESS 4K x 8 Dual-Port Static RAMs and 4K x 8 Dual-Port Static RAM with Semaphores Features Functional D escription • 0.8-micron BiCMOS for high performance T he CY7B134, CY7B135, and CY7B1342 are high-speed BiCMOS 4K x 8 dual-port


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    CY7B134 CY7B135 CY7B1342 CY7B134, CY7B135, CY7B1342 GD15bDfl PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7B131 CY7B141 F# CYPRESS IK x 8 Dual-Port Static RAM Features Functional Description • 0.8-micron BiCMOS for high perform ance • Automatic power-down • M aster CY7B131 easily expands data bus width to 16 or more bits using slave CY7B141 • BÜ5Ÿ output flag on CY7B131; BUSŸ


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    CY7B131 CY7B141 CY7B131 CY7B131; CY7B141 PDF

    Untitled

    Abstract: No abstract text available
    Text: • V* CY7C008/009 CY7C018/019 . <wiwy 64K/128K x 8/9 Dual-Port Static RAM Fully asynchronous operation Automatic power-down Features • True Dual-Ported memory cells which allow simulta­ neous access of the same memory location • 64K x 8 organization CY7C008


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    CY7C008/009 CY7C018/019 64K/128K CY7C008) CY7C009) CY7C018) CY7C019) 35-micron PDF

    Z1213

    Abstract: CY7C132 CY7C136 CY7C146 zl12
    Text: bSE » CYPRESS SEMICONDUCTOR SSÖ'lbbE 0 0 0 ^ 7 4 7 ISb I CYP CY7C132/CY7C136 CY7C142/CY7C146 CYPRESS SEMICONDUCTOR 2K x 8 Dual-Port Static RAM output enable OE . BUSY flags are pro­ vided on each port. In addition, an interrupt Functional Description Features


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    CY7C132/CY7C136 CY7C142/CY7C146 CY7C142/CY7C146 CY7C132/ CY7C136; 52-pin CY7C132/CY7C136/CY7C142/ CY7C146 Z1213 CY7C132 CY7C136 zl12 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY ^/CYPRESS 2K x 16 Dual-Port Static RAM Features • A v a ila b le in 6 8 - p in P L C C • 0 .8 -m ic r o n C M O S fo r o p t im u m s p e e d / p o w er • P in c o m p a tib le a n d f u n c tio n a lly e q u iv a le n t t o I D T 7 1 3 3 a n d I D T 7 1 4 3


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    CY7C133 CY7C143 PDF

    3140ca

    Abstract: No abstract text available
    Text: fax id: 5220 CYPRESS CY7C008/009 CY7C018/019 PRELIMINARY 64K/128K x 8/9 Dual-Port Static RAM Features ' Fully asynchronous operation ' Automatic power-down •Expandable data bus to 16/18 bits or more using Mas­ ter/Slave chip select when using more than one device


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    CY7C008/009 CY7C018/019 64K/128K CY7C008) CY7C009) CY7C018) CY7CQ19) 35-micron CY7C018-20AI 100-Pin 3140ca PDF

    Untitled

    Abstract: No abstract text available
    Text: fax id: 5221 CYPRESS CY7C027/028 CY7C037/038 PRELIMINARY 32K/64KX 16/18 Dual-Port Static RAM Features • Fully asynchronous operation • Automatic power-down • True Dual-Ported m emory cells which allow simulta­ neous access of the same memory location


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    CY7C027/028 CY7C037/038 32K/64KX CY7C027) CY7C028) CY7C037) CY7C038) 35-micron CY7C037-15AC CY7C037-15AI PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7B131 CY7B141 r# CYPRESS IK x 8 Dual-Port Static RAM Features Functional D escription • B U S Y o u tp u t f la g o n C Y 7 B I 3 I ; B U S Y in p u t o n C Y 7 B I 4 I 'H ie C Y 7 B 1 3 1 a n d C Y 7 B I 4 1 a r c h i g h ­ s p e e d B i C M O S IK by K d u a l- p o r t static


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    CY7B131 CY7B141 CY7B141 3K-IHI466 PDF

    Untitled

    Abstract: No abstract text available
    Text: V CYPRESS PRELIMINARY 16K x 8/9 Dual-Port Static RAM with Sem, Int, Busy F e a tu re s F u n c tio n a l D escrip tio n • C M O S for optim um speed/pow er • H igh-sp eed access T h e CY7C00f> a n d C Y 7 C 0 1 6 are h ig h ­ s p e e d C M O S 16K x 8 a n d 16K x 9 d u a l­


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    68-pin 80-pin 64-pin T7006 IDT7016 CY7C006 CY7C016 PDF

    CY7B144-25LMB

    Abstract: f-20l
    Text: CY7B144 _ CY7B145 8K x 8/9 Dual-Port Static RAM with Sem, Int, Busy Features Functional Description • 0.8-micron BiCMOS for high per­ formance • High-speed access — 15 ns commercial — 25 ns (military) The CY7B144 and CY7B145 are high­


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    CY7B144 CY7B145 68-pin 38-00163-E CY7B144-25LMB f-20l PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7B134 CY7B135 CY7B1342 CYPRESS 4K x 8 Dual-Port Static RAMs and 4K x 8 Dual-Port Static RAM with Semaphores Features Functional Description • 0.8-micron BiCMOS for high performance • High-speed access — 15 ns commercial — 25 ns (military) • Automatic power-down


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    CY7B134 CY7B135 CY7B1342 7B1342 7B134 48-pin 7B135/7B1342 52-pin CY7B1342 PDF

    Untitled

    Abstract: No abstract text available
    Text: HIGH-SPEED 8K x 9 DUAL-PORT £ V ¡ y IDT7015S/L STATIC RAM Integrated Device Technology, Inc. FEATURES: • • • • • True Dual-Ported memory cells which allow simulta­ neous reads of the same memory location High-speed access — Military: 25/35ns max.


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    IDT7015S/L 68-pin 80-pin 25/35ns 15/17/20/25/35T IDT7015/7016 IDT701 MIL-STD-883, PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C132/CY7C136 CY7C142/CY7C146 if CYPRESS 2K x 8 Dual-Port Static RAM Functional D escription Features • 0.8-raicron CMOS for optimum speed/ power • BUSY output flag on CY7C132/ CY7C136; BUSY input on CY7C142/CY7C146 The CY7C132/CY7C136/CY7C142 and CY7C146 are high-speed CMOS 2K by 8


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    CY7C132/CY7C136 CY7C142/CY7C146 CY7C132/ CY7C136; CY7C132/CY7C136/CY7C142 CY7C146 CY7C136 CY7C142/CY7C146 PDF

    Zl13

    Abstract: ZL12 CY7C130 CY7C131 CY7C140 CY7C141 IDT7130 IDT7140 C1308 wj 75
    Text: CY7C130/CY7C131 CY7C140/CY7C141 W CYPRESS Features • 0.8-micron CMOS for optimum speed/power • Automatic power-down • TTL compatible • Capable o f withstanding greater than 2001V electrostatic discharge • Fully asynchronous operation • Master CY7C130/CY7C131 easily ex­


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    CY7C130/CY7C131 CY7C140/CY7C141 CY7C140/ CY7C141 CY7C130/ CY7C131; CY7C140/CY7C141 IDT7130 IDT7140 Zl13 ZL12 CY7C130 CY7C131 CY7C140 CY7C141 C1308 wj 75 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY WCYPRESS: CY7C024/0241 CY7C025/0251 4K x 16/18 and 8K x 16/18 Dual-Port Static RAM with Sem, Int, Busy Features • 4K x 16 organization CY7C024 • 4K x 18 organization (CY7C0241) • 8K x 16 organization (CY7C025) • 8K x 18 organization (CY7C0251)


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    CY7C024/0241 CY7C025/0251 CY7C024) CY7C0241) CY7C025) CY7C0251) CY7C0251 100-Pin Y7C0251â PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY IDT7054S/L HIGH-SPEED 4K x 8 FourPort STATIC RAM |S a < u ) Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-speed access — Military: 25/35ns max.) — Commercial: 2Q/25/35ns (max.) • Low-power operation — IDT7054S


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    IDT7054S/L 25/35ns 2Q/25/35ns IDT7054S IDT7054L DD277bà PDF

    893Q

    Abstract: CY7C131-55JI bit-slice t913 CY7C1312
    Text: fax id: 5200 CY7C130/CY7C131 CY7C140/CY7C141 1K x 8 Dual-Port Static Ram Featu res Functional Description • True Dual-Ported memory cells which allow sim ulta­ neous reads of the same memory location • 1K x 8 organization • 0.65-micron CMOS for optimum speed/power


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    CY7C130/CY7C131 CY7C140/CY7C141 65-micron Y7C140/CY7C141 CY7C130/CY7C131; 48-pin CY7C130/140) 52-pin 893Q CY7C131-55JI bit-slice t913 CY7C1312 PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C027/028 CY7C037/038 32K/64KX 16/18 Dual-Port Static RAM Fully asynchronous operation Automatic power-down Features • True Dual-Ported memory cells which allow simulta­ neous access of the same memory location • 32K x 16 organization CY7C027 • 64K x 16 organization (CY7C028)


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    CY7C027/028 CY7C037/038 32K/64KX CY7C027) CY7C028) CY7C037) CY7C038) 35-micron PDF

    Untitled

    Abstract: No abstract text available
    Text: fax id: 5012 C Y7 C9 7 0 0 Fast Ethernet Repeater Controller • Repeater loopback m o d e for testing Feat u res 13 Po rt IEEE 8 0 2 .3u co m p lia nt 10 0B A S E -T Repeater Controller • 13 General purpose p ro g r a m m a b le I/O pins — 12 shared network ports


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    PDF

    AB2674

    Abstract: No abstract text available
    Text: In te g ra te d D e v ic e T e c h n o lo g y , Inc. FEATURES: • Industrial tem perature range - 4 0 ° C to + 85 °C is avail­ able, tested to military electrical specifications • High-speed access — Military: 2 0 /25/3 5/45 n s (m ax.) DESCRIPTION:


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    IDT7052S/L /35/45n T7052S IDT7052S/L 108-P 132-P 120-P AB2674 PDF

    Untitled

    Abstract: No abstract text available
    Text: W P CYPRESS PRELIM INARY 2K x 16 Dual-Port Static RAM Features • A vailable in 68-pin PLCC • • Pin com patible and fu nctionally equivalent to IDT7133 and IDT7143 • • • • • • 0.8-m icron C M O S for optim um speed/pow er High speed access: 25 ns


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    Y7C133 CY7C143 CY7C133; CY7C143 CY7C133 68-pin IDT7133 IDT7143 PDF