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    M58LR256KD Search Results

    M58LR256KD Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    M58LR256KD Numonyx 128 or 256 Mbit (x16, mux I/O, multiple bank, multilevel interface, burst) 1.8 V supply Flash memories Original PDF

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    Catalog Datasheet MFG & Type PDF Document Tags

    M58LRxxxKC

    Abstract: No abstract text available
    Text: M58LR128KC M58LR128KD M58LR256KC M58LR256KD 128- or 256-Mbit x16, mux I/O, multiple bank, multilevel interface, burst 1.8 V supply flash memories Features „ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers


    Original     		PDF M58LR128KC M58LR128KD M58LR256KC M58LR256KD 256-Mbit M58LR128KC/D 16-Mbit M58LR256KC/D M58LRxxxKC

    M58LR256K

    Abstract: No abstract text available
    Text: M58LR128KC M58LR128KD M58LR256KC M58LR256KD 128- or 256-Mbit x16, mux I/O, multiple bank, multilevel interface, burst 1.8 V supply flash memories Features • Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers


    Original     		PDF M58LR128KC M58LR128KD M58LR256KC M58LR256KD 256-Mbit M58LR128KC/D 16-Mbit M58LR256KC/D M58LR256K

    CR10

    Abstract: M58LR128KC M58LR128KD M58LR256KC M58LR256KD M58LRxxxKC
    Text: M58LR128KC, M58LR128KD M58LR256KC, M58LR256KD 128 or 256 Mbit x16, mux I/O, multiple bank, multilevel interface, burst 1.8 V supply Flash memories Target Specification Features • Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers


    Original     		PDF M58LR128KC, M58LR128KD M58LR256KC, M58LR256KD M58LR128KC/D M58LR256KC/D CR10 M58LR128KC M58LR128KD M58LR256KC M58LR256KD M58LRxxxKC