"Infrared LED" 880 nm wavelength circuits
Abstract: No abstract text available
Text: Dialight 3mm Prism CBI® Infrared Emitter True Surface Mount LED 4.3 [.170] 591-7101-1xx Part No.* 591-7101-1xx CATHODE ID 6.1 [.240] 2.1 [.082] 2.8 [.112] Applications 2.8 [.112] 5.0 [.198] Configuration 880 nm IR Emitter • Control and drive circuits
|
Original
|
PDF
|
591-7101-1xx
"Infrared LED" 880 nm wavelength circuits
|
"on semiconductor"
Abstract: E160 MC100E193 MC100E193FN MC100E193FNR2 MC10E193 MC10E193FN MC10E193FNR2 p4350
Text: MC10E193, MC100E193 5VĄECL Error Detection/ Correction Circuit The MC10E/100E193 is an error detection and correction EDAC circuit. Modified Hamming parity codes are generated on an 8-bit word according to the pattern shown in the logic symbol. The P5 output gives the parity of the whole word. The word parity is also
|
Original
|
PDF
|
MC10E193,
MC100E193
MC10E/100E193
12-bit
r14525
MC10E193/D
"on semiconductor"
E160
MC100E193
MC100E193FN
MC100E193FNR2
MC10E193
MC10E193FN
MC10E193FNR2
p4350
|
socket 775 pinout
Abstract: PLCC28 package
Text: MC100E193 5V ECL Error Detection/ Correction Circuit The MC100E193 is an error detection and correction EDAC circuit. Modified Hamming parity codes are generated on an 8-bit word according to the pattern shown in the logic symbol. The P5 output gives the parity of the whole word. The word parity is also
|
Original
|
PDF
|
MC100E193
12-bit
AND8020
MC100E193
AN1404
AN1405
AN1406
AN1503
AN1504
socket 775 pinout
PLCC28 package
|
SECDED
Abstract: No abstract text available
Text: This document, MC10E193/D has been canceled. LAN was sent 01/03/2002 Semiconductor Components Industries, LLC, 2000 October, 2000 – Rev. 4 1 Publication Order Number: MC10E193/D MC10E193, MC100E193 MC10E193, MC100E193 5VĄECL Error Detection/ Correction Circuit
|
Original
|
PDF
|
MC10E193/D
MC10E193/D
MC10E193,
MC100E193
MC100E193
MC10E/100E193
12-bit
r14525
SECDED
|
3525 "application note"
Abstract: SECDED ic 4050 AN1404 AND8020 E160 MC100E193 MC100E193FN MC100E193FNR2 socket 775 pinout
Text: MC100E193 5VĄECL Error Detection/ Correction Circuit The MC100E193 is an error detection and correction EDAC circuit. Modified Hamming parity codes are generated on an 8-bit word according to the pattern shown in the logic symbol. The P5 output gives the parity of the whole word. The word parity is also
|
Original
|
PDF
|
MC100E193
MC100E193
12-bit
r14525
MC100E193/D
3525 "application note"
SECDED
ic 4050
AN1404
AND8020
E160
MC100E193FN
MC100E193FNR2
socket 775 pinout
|
Untitled
Abstract: No abstract text available
Text: MC100E193 5V ECL Error Detection/ Correction Circuit The MC100E193 is an error detection and correction EDAC circuit. Modified Hamming parity codes are generated on an 8-bit word according to the pattern shown in the logic symbol. The P5 output gives the parity of the whole word. The word parity is also
|
Original
|
PDF
|
MC100E193
12-bit
MC100E193/D
|
SCR 2140
Abstract: No abstract text available
Text: ECP100D The Communications Edge TM Product Information 1 Watt, High Linearity InGaP HBT Amplifier x 18 dB Gain @ 900 MHz x 12 dB Gain @ 1960 MHz x Single Positive Supply +5V Applications x Final stage amplifiers for Repeaters x Mobile Infrastructure x Defense / Homeland Security
|
Original
|
PDF
|
ECP100D
ECP100D
16-pin
1-800-WJ1-4401
SCR 2140
|
ECP200D
Abstract: No abstract text available
Text: ECP200D The Communications Edge TM Product Information 2 Watt, High Linearity InGaP HBT Amplifier x 18 dB Gain @ 900 MHz x 11 dB Gain @ 1960 MHz x Single Positive Supply +5V Applications x Final stage amplifiers for Repeaters x Mobile Infrastructure x Defense / Homeland Security
|
Original
|
PDF
|
ECP200D
ECP200D
16-pin
1-800-WJ1-4401
|
Untitled
Abstract: No abstract text available
Text: ECP100D 1 Watt, High Linearity InGaP HBT Amplifier • +46 dBm Output IP3 • Single Positive Supply +5V • Lead-free/green/RoHS-compliant 16pin 4mm QFN package Applications • Final stage amplifiers for Repeaters • Mobile Infrastructure • Defense / Homeland Security
|
Original
|
PDF
|
ECP100D
16pin
ECP100D
16-pin
1-800-WJ1-4401
|
AH215-S8
Abstract: ECP100D ECP100D-G ECP100D-PCB1960 ECP100D-PCB2140 ECP100D-PCB900 l475
Text: ECP100D The Communications Edge TM Product Information 1 Watt, High Linearity InGaP HBT Amplifier x 18 dB Gain @ 900 MHz x 12 dB Gain @ 1960 MHz x Single Positive Supply +5V x Lead-free/Green/RoHS-compliant 16pin 4mm QFN package Applications x Final stage amplifiers for
|
Original
|
PDF
|
ECP100D
16pin
214ws
1-800-WJ1-4401
AH215-S8
ECP100D
ECP100D-G
ECP100D-PCB1960
ECP100D-PCB2140
ECP100D-PCB900
l475
|
stripline directional couplers
Abstract: MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1
Text: RF and IF Quarter 3, 2005 SG1009Q32005 Rev 0 What’s New! Market Product GSM/GPRS Cellular MMM6025 Cellular, GPS, ISM MC13820 TV Broadcast MRF377HR3, MRF377HR5 900 MHz Cellular Base Station MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, MRF6S9125NBR1, MRF6S9130HR3, MRF6S9130HSR3,
|
Original
|
PDF
|
SG1009Q32005
MMM6025
MC13820
MRF377HR3,
MRF377HR5
MRF6S9045NR1,
MRF6S9045NBR1,
MRF6S9060NR1,
MRF6S9060NBR1,
MRF6S9125NR1,
stripline directional couplers
MRFP36030
MRF5S9080NB
NONLINEAR MODEL LDMOS
MRF377HR5
Product Selector Guide
MRF1511NT1 ESD
MC13820
MRF377HR3
MRF6S9045NBR1
|
TRANSISTOR REPLACEMENT GUIDE
Abstract: FS Oncore hf modem ofdm bts 2140 1b data sheet ISO 1302 uhf linear amplifier module linear amplifier 470-860 amplifier mrf247 class AB hf bipolar FM LDMOS freescale transistor
Text: Quarter 4, 2004 SG1009Q42004 Rev 0 What’s New! Market Product 900 MHz Cellular Base Station MRF5S9070NR1, MRF5S9100MR1, MRF5S9100MBR1, MRF5S9100NR1, MRF5S9100NBR1, MRF5S9101MR1, MRF5S9101MBR1, MRF5S9101NR1, MRF5S9101NBR1, MRF9200LR3, MRF9200LSR3 CDMA 1.9 GHz Cellular Base Station
|
Original
|
PDF
|
SG1009Q42004
MRF5S9070NR1,
MRF5S9100MR1,
MRF5S9100MBR1,
MRF5S9100NR1,
MRF5S9100NBR1,
MRF5S9101MR1,
MRF5S9101MBR1,
MRF5S9101NR1,
MRF5S9101NBR1,
TRANSISTOR REPLACEMENT GUIDE
FS Oncore
hf modem ofdm
bts 2140 1b data sheet
ISO 1302
uhf linear amplifier module
linear amplifier 470-860
amplifier mrf247
class AB hf bipolar
FM LDMOS freescale transistor
|
MMM6029
Abstract: NONLINEAR MODEL LDMOS MMM6007 baseband DigRF semiconductor cross index MRF5S9080NB MW6S010 MMM6000 MMH3101NT1 MRF648 applications
Text: ZigBee Transceivers RF Cellular Subsystems Low Power RF Components RF Transistors RF Amplifier ICs and Modules RF General Purpose Amplifiers CATV Distribution Amplifier Modules Quarter 4, 2005 SG1009Q42005 Rev 0 What’s New! Market Product GSM/GPRS Cellular
|
Original
|
PDF
|
SG1009Q42005
MMM6025,
MMM6035
MC13820
MRF6P3300HR3,
MRF6P3300HR5
MRF6S9045NR1,
MRF6S9045NBR1,
MRF6S9060NR1,
MRF6S9060NBR1,
MMM6029
NONLINEAR MODEL LDMOS
MMM6007
baseband DigRF
semiconductor cross index
MRF5S9080NB
MW6S010
MMM6000
MMH3101NT1
MRF648 applications
|
VTE1163
Abstract: No abstract text available
Text: GaAlAs Infrared Emitting Diodes VTE1163 TO-46 Lensed Package — 880 nm PACKAGE DIMENSIONS inch mm CASE 24 TO-46 HERMETIC (Lensed) CHIP SIZE: .018" x .018" DESCRIPTION This narrow beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAlAs, 880 nm, high efficiency IRED chip
|
Original
|
PDF
|
VTE1163
VTE1163
|
|
|
VTE1163H
Abstract: 880nm
Text: GaAlAs Infrared Emitting Diodes VTE1163H TO-46 Lensed Package — 880 nm PACKAGE DIMENSIONS inch mm CASE 24 TO-46 HERMETIC (Lensed) CHIP SIZE: .018" x .018" DESCRIPTION This narrow beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAlAs, 880 nm, high efficiency IRED chip
|
Original
|
PDF
|
VTE1163H
VTE1163H
880nm
|
339 opamp
Abstract: OPamp 60V depth sounder LM6142 model SPICE LM6144 equivalent phase failure / phase reversal LM6144BIN LM6142 LM6142AIM LM6142AIN
Text: LM6142 Dual and LM6144 Quad High Speed Low Power 17 MHz Rail-to-Rail Input-Output Operational Amplifiers General Description Features At VS e 5V Using patent pending new circuit topologies the LM6142 44 provides new levels of performance in applications where low voltage supplies or power limitations previously made compromise necessary Operating on supplies
|
Original
|
PDF
|
LM6142
LM6144
20-3A
339 opamp
OPamp 60V
depth sounder
LM6142 model SPICE
LM6144 equivalent
phase failure / phase reversal
LM6144BIN
LM6142AIM
LM6142AIN
|
LM6142 model SPICE
Abstract: OPamp 60V rail to rail opamp LM6142 LM6142AIM LM6142AIN LM6142BIM LM6142BIN LM6144 LM6144AIM
Text: LM6142 Dual and LM6144 Quad High Speed Low Power 17 MHz Rail-to-Rail Input-Output Operational Amplifiers General Description Features At VS e 5V Using patent pending new circuit topologies the LM6142 44 provides new levels of performance in applications where low voltage supplies or power limitations previously made compromise necessary Operating on supplies
|
Original
|
PDF
|
LM6142
LM6144
20-3A
LM6142 model SPICE
OPamp 60V
rail to rail opamp
LM6142AIM
LM6142AIN
LM6142BIM
LM6142BIN
LM6144AIM
|
M 9587
Abstract: FS Oncore MG4100 LDMOS PA Driver IC, Motorola FS Oncore GPS motorola GPS receiver module fs oncore Motorola transistors MRF646 semiconductors cross index transistor m 9587 MRF9210
Text: RF AND IF QUARTER 1, 2004 SG1009/D REV 0 WWW.MOTOROLA.COM/SEMICONDUCTORS What’s New! Market Product TV Broadcast MRF377 800 MHz 2.2 GHz Cellular Base Station MW4IC001MR4 900 MHz Cellular Base Station MRF9210, MHVIC915R2, MWIC930R1, MWIC930GR1 GSM/GSM EDGE/TDMA 1.8 GHz Cellular Base Station
|
Original
|
PDF
|
SG1009/D
MRF377
MW4IC001MR4
MRF9210,
MHVIC915R2,
MWIC930R1,
MWIC930GR1
MHVIC1905R2,
MW4IC2020MBR1,
MW4IC2020GMBR1,
M 9587
FS Oncore
MG4100
LDMOS PA Driver IC, Motorola
FS Oncore GPS
motorola GPS receiver module fs oncore
Motorola transistors MRF646
semiconductors cross index
transistor m 9587
MRF9210
|
Untitled
Abstract: No abstract text available
Text: MC100EP16VT 3.3V / 5V ECL Differential Receiver/Driver with Variable Output Swing and Internal Input Termination The MC100EP16VT is a differential receiver functionally equivalent to the 100EP16 with input pins controlling the amplitude of the outputs pin 1 and providing an internal termination network (pin 4).
|
Original
|
PDF
|
MC100EP16VT
100EP16
EP16VT
MC100EP16VT
AND8020
|
500MHz Frequency Counter Using MECL
Abstract: MC100E016 MC100E016FN MC100E016FNR2 MC10E016 MC10E016FN MC10E016FNR2 MC10H016 APPLICATIONS OF mod 20 COUNTER
Text: MC10E016, MC100E016 5VĄECL 8ĆBit Synchronous Binary Up Counter The MC10E/100E016 is a high-speed synchronous, presettable, cascadable 8-bit binary counter. Architecture and operation are the same as the MC10H016 in the MECL 10H family, extended to 8-bits,
|
Original
|
PDF
|
MC10E016,
MC100E016
MC10E/100E016
MC10H016
r14525
MC10E016/D
500MHz Frequency Counter Using MECL
MC100E016
MC100E016FN
MC100E016FNR2
MC10E016
MC10E016FN
MC10E016FNR2
APPLICATIONS OF mod 20 COUNTER
|
500MHz Frequency Counter Using MECL
Abstract: MC100E016 MC100E016FN MC100E016FNR2 MC10E016 MC10E016FN MC10E016FNR2 MC10H016 Presettable Counter example spice up down
Text: MC10E016, MC100E016 5VĄECL 8ĆBit Synchronous Binary Up Counter The MC10E/100E016 is a high-speed synchronous, presettable, cascadable 8-bit binary counter. Architecture and operation are the same as the MC10H016 in the MECL 10H family, extended to 8-bits,
|
Original
|
PDF
|
MC10E016,
MC100E016
MC10E/100E016
MC10H016
r14525
MC10E016/D
500MHz Frequency Counter Using MECL
MC100E016
MC100E016FN
MC100E016FNR2
MC10E016
MC10E016FN
MC10E016FNR2
Presettable Counter example spice up down
|
1034-01
Abstract: 74 series family LP5080A LP5140A LP7080C LP7080P LP7140P LP7220P Laserpath Corporation lsi logic arrays
Text: LSP LASERPATH LP7000P, LP7000C, LP5000A Series Gate Arrays ONE DAY GATE ARRAYS A p ril 1987 Laserpath’s LP7000P, LP7000C, and LP5000A Series are high I/O gate arrays, manufac tured using 2-micron, 2-layer metal HCMOS technology. They have the same electrical
|
OCR Scan
|
PDF
|
LP7000P,
LP7000C,
LP5000A
LP7080Pâ
LP7080C
LP5080A
LP5600A
1034-01
74 series family
LP5080A
LP5140A
LP7080C
LP7080P
LP7140P
LP7220P
Laserpath Corporation
lsi logic arrays
|
IC/SCR 131- 6 WJ 69
Abstract: No abstract text available
Text: DRAM MODULE KMM364C213BK/BS KMM364C213BK/BS Fast Page Mode 2Mx64 DRAM DIMM based on 2Mx8, 2K Refresh, 5V G EN ERA L D ESCRIPTIO N FEATURES The Samsung KMM364C213B is a 2M bit x 64 Dynamic RAM high density memory module. The Samsung KMM364C213B consists of eight CMOS
|
OCR Scan
|
PDF
|
KMM364C213BK/BS
KMM364C213BK/BS
2Mx64
KMM364C213B
300mil
48pin
168-pin
110ns
IC/SCR 131- 6 WJ 69
|
1125MAX
Abstract: 94V-0 SR-02
Text: 3mm Dialight Prism* CBrinfrared Emitter True Surface Mount LED 591-7101-1xx COLLECTOR ID _L 8 8 0 nm IR E m itter • Control and drive circuits 1 C O L LE C T O R \ 2.00 1 . 7 5 \ [ ° 79! [.069 - i Configuration Applications [. 112! l^n ! nd j| [ 125] MAX
|
OCR Scan
|
PDF
|
591-7101-1xx
1125MAX
94V-0 SR-02
|