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    87 NPN Search Results

    87 NPN Result Highlights (5)

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    SSM2212RZ Analog Devices Low Noise,Matched Dual NPN Tra Visit Analog Devices Buy
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    87 NPN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2108H

    Abstract: 2108 npn transistor iec 255-4 831 transistor 2108 counter cp2 C 829 transistor
    Text: Totalizers, LCD, 24 x 48 Operating characteristics ● 87 610 340 1 87 610 440 2 Display 87 610 340 2108 87 610 440 (2108H) CP2 ● CP2 R 2 R This dot indicates capacity overload Terminal markings and connections 2108 Terminals : 1 - Reset input 2 - Enable Reset


    Original     		PDF 2108H) 2108H 2108/2108H 2108H 2108 npn transistor iec 255-4 831 transistor 2108 counter cp2 C 829 transistor

    CP319

    Abstract: CZTA44HC TIP47 TIP48 TIP50
    Text: PROCESS CP319 Central Power Transistor TM Semiconductor Corp. NPN - Silicon Power Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 87 x 87 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 24 x 15 MILS Emitter Bonding Pad Area 38 x 16 MILS


    Original     		PDF CP319 CZTA44HC TIP47 TIP48 TIP50 21-September CP319 CZTA44HC TIP47 TIP48 TIP50

    TIP47

    Abstract: CP319 CZTA44HC TIP48 TIP50
    Text: PROCESS CP319 Power Transistor NPN - Silicon Power Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 87 x 87 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 24 x 15 MILS Emitter Bonding Pad Area 38 x 16 MILS Top Side Metalization Al - 30,000Å


    Original     		PDF CP319 CZTA44HC TIP47 TIP48 TIP50 22-March TIP47 CP319 CZTA44HC TIP48 TIP50

    N681622

    Abstract: W681388 TRANSISTOR Bf 310n N681387DG N681387 GKDF QFN-48 thermal resistance N681386 w684386 n681622yg
    Text: N681386/87 Single Programmable Extended Codec/SLCC 1. DESCRIPTION The N681386/87, implements a single channel FXS telephone line interface optimized for short loop applications. It integrates SLCC Subscriber Line Control Circuit functionality with a programmable CODEC and a DC/DC controller.


    Original     		PDF N681386/87 N681386/87, 16-bit N681622 W681388 TRANSISTOR Bf 310n N681387DG N681387 GKDF QFN-48 thermal resistance N681386 w684386 n681622yg

    5000 watt subwoofer amplifier circuit diagram

    Abstract: 5000 watt subwoofer amplifier image AN8739 car subwoofer amplifier schematic circuit diagram mosfet 5000 watt subwoofer circuit diagram subwoofer Amplifier 200w schematic diagrams 200w subwoofer preamp diagram CAR SUBWOOFER 200W AMP 2.1 surrounding amplifer subwoofer circuit 800 watt subwoofer circuit diagram
    Text: Application Note 87 November 2000 Linear Technology Magazine Circuit Collection, Volume V Data Conversion, Interface and Signal Conditioning Products Richard Markell, Editor INTRODUCTION Application Note 87 is the fifth in a series that excerpts useful circuits from Linear Technology magazine to preserve them for posterity. This application note highlights


    Original     		PDF AN87-124 an87f 5000 watt subwoofer amplifier circuit diagram 5000 watt subwoofer amplifier image AN8739 car subwoofer amplifier schematic circuit diagram mosfet 5000 watt subwoofer circuit diagram subwoofer Amplifier 200w schematic diagrams 200w subwoofer preamp diagram CAR SUBWOOFER 200W AMP 2.1 surrounding amplifer subwoofer circuit 800 watt subwoofer circuit diagram

    g 2231

    Abstract: C 829 transistor cp2 2213 transistor 2213 lcd 7" 2231 max 2231 crouzet cp2
    Text: Totalizers, LCD, 24 x 48 Characteristics 4 - 30 V c 0 - 0.7 V c 4 - 30 V c ● 2231 Solid state input, lithium battery Voltage input, lithium battery 87 610 040 2232 1 87 610 050 2 Accessories Adaptor for panel cut-out 25x50 mm dimensions 29x54 mm 45x45 mm (dimensions 52x52 mm)


    Original     		PDF 25x50 29x54 45x45 52x52 8-240V~ g 2231 C 829 transistor cp2 2213 transistor 2213 lcd 7" 2231 max 2231 crouzet cp2

    BDT85

    Abstract: BDT87 BDT81 BDT82 NPN Transistor VCEO 80V 100V BDT83
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BDT81/83/85/87 DESCRIPTION •DC Current Gain -hFE = 40 Min @ IC= 5A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 60V(Min)- BDT81; 80V(Min)- BDT83; 100V(Min)- BDT85; 120V(Min)- BDT87


    Original     		PDF BDT81/83/85/87 BDT81; BDT83; BDT85; BDT87 BDT82/84/86/88 BDT81 BDT83 BDT85 BDT87 BDT81 BDT82 NPN Transistor VCEO 80V 100V BDT83

    2N6486

    Abstract: 2n6489 2n6491
    Text: 2N6486/87/88 2N6489/90/91 COMPLEMENTARY SILICON POWER TRANSISTORS n 2N6487, 2N6488, 2N6489 AND 2N6490 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N6486, 2N6487 and 2N6488 are silicon epitaxial-base NPN transistors mounted in Jedec TO-220 plastic package.


    Original     		PDF 2N6486/87/88 2N6489/90/91 2N6487, 2N6488, 2N6489 2N6490 2N6486, 2N6487 2N6488 O-220 2N6486 2n6491

    contadores

    Abstract: schema elettrico auto DISPLAY DE 16 SEGMENTOS display led 4 digitos comptage DISPLAY 16 segmentos statica cpt4 display lcd 7 segmenti Display 7 segmentos
    Text: 87 620 ppp Présélecteur multifonctions Multifunctions preselector Multifunktions-vorwahlzähler Preselector multifunción Contatore multifunzione Multifunctionele voorselecto NTR 810 A 12 - 2005 Page 6 Multifunctions preselector Page 44 Multifunktionsvorwahlzähler


    Original     		PDF

    induction cooker fault finding diagrams

    Abstract: enamelled copper wire swg table AC digital voltmeter using 7107 wiring diagram IEC320 C14 Inlet Male Power Socket Fuse Switch db 3202 diac siemens mkl capacitor YY63T varta CR123A HXD BUZZER lt700 transformer
    Text: 03front order p1_3 1/29/02 3:01 PM C3 Page 1 components cables & connectors actives 18 57 semiconductors optoelectronics passives contents 72 81 87 91 capacitors resistors transformers, ferrites & inductors emc, filters & suppression electromechanical 92 120


    Original     		PDF 03front induction cooker fault finding diagrams enamelled copper wire swg table AC digital voltmeter using 7107 wiring diagram IEC320 C14 Inlet Male Power Socket Fuse Switch db 3202 diac siemens mkl capacitor YY63T varta CR123A HXD BUZZER lt700 transformer

    BUX86

    Abstract: BUX87 Q68000-A3870 Q68000-A5167 S400
    Text: 25C J> • ÖEBSbQS 00QMÖ72 3 « S I E G • j^35-Of NPN Silicon High Voltage Switching Transistors BUX 86 BLfX 87 - SIEMENS AKTIENüESELLSCHAF - BUX 86 and BUX 87 are NPN silicon epibase power switching transistors in TO 126 plastic


    OCR Scan     		PDF f-35-Of Q68000-A3870 Q68000-A5167 80tal MMs60Â c3MS60Â 235b05 000Ma75 BUX86 fl23SbQS BUX86 BUX87 Q68000-A3870 Q68000-A5167 S400

    2n2222 h 331 transistors

    Abstract: 2N2222A 331 2n2222 -331 transistors PNP 2n3906 331 2n2222 - 331 jf494 2n2222 2n5401 2n5551 BC337 2n2222 331 transistors PNP 2n4403 331
    Text: Philips Semiconductors Leaded transistors Selection guide GENERAL PURPOSE APPLICATIONS h re TYPE NUMBER VcEO V •c (mA) *T Plot (mW) min. max. typi (MHz) PAGE NPN BC107 45 100 300 125 500 300 87 BC108 20 100 300 125 900 300 87 BC109 20 100 300 240 900 300


    OCR Scan     		PDF BC107 BC108 BC109 BC140 BC141 BC337 BC337A BC338 BC368 BC375 2n2222 h 331 transistors 2N2222A 331 2n2222 -331 transistors PNP 2n3906 331 2n2222 - 331 jf494 2n2222 2n5401 2n5551 2n2222 331 transistors PNP 2n4403 331

    0T33

    Abstract: No abstract text available
    Text: 25C » m ÖEBSbQS 00QMÖ72 3 « S I E G • j~~35-0? NPN Silicon High Voltage Switching Transistors BUX 86 BLfX 87 - SIEMENS AKTIENüE SE LL SC HA F -BUX 86 and BUX 87 are NPN silicon epibase power switching transistors in TO 126 plastic


    OCR Scan     		PDF 8000-A Q68000-A5167 0-T-33-O9 caMS60` 335b05 BUX87 000447b l-r-33-ff BUX86 0T33

    TIL188-4

    Abstract: No abstract text available
    Text: TILI 87-1 THRU TILI 87-4 TILI 88-1 THRU TILI 88-4 AC-INPUT OPTOCOUPLERS/OPTOISOLATORS D2980, JANUARY 1987-REVISED JULY 1989 AC Signal Input • High Current Transfer Ratio, 500% Minimum at Ip - 10 mA, Up to 1500% Minimum at If - 2 mA with Four Categories Gallium Arsenide Dual-Diode Infrared Source


    OCR Scan     		PDF D2980, 1987-REVISED TIL187 TIL188-4

    E2B20

    Abstract: Transistor bdy 11 BDY88 BDY87 TRANSISTOR D131 transistor 1005 oj SWITCHING TRANSISTOR 60V BDY89 D129 D131
    Text: BDY 87, BDY 88, BDY 89 NPN Darlington stages for AF and switching applications BDY 87, BDY 88, and BDY 89 are hig h -p o w e red arid highly am plifying NPN o u tp u t stages for AF and s w itch in g applications. They consist of tw o single-diffused NPN transistor systems each in com pound connection in a case 9 A 4 DIN 41875 S O T-9


    OCR Scan     		PDF Q62702- Q62901 Q62901- BDY87 rcase-45Â E2B20 Transistor bdy 11 BDY88 BDY87 TRANSISTOR D131 transistor 1005 oj SWITCHING TRANSISTOR 60V BDY89 D129 D131

    2N62B7

    Abstract: 2N6263 2N6266
    Text: CRYSTALONCS 2805 Veterans Highway Suite 14 Ronkonkoma, N.Y. 11779 NPN/PNP 2N6282 thru 2N6287 COMPLEMENTARY DARLINGTON POWER AMPLIFIERS T O -3 GEOMETRY 509-1 Collector connscted to case • NPN 2N6282-84 • PNP 2N6285-87 • High Gain • Monolithic Construction


    OCR Scan     		PDF 2N6282-84 2N6285-87 2N6282 2N6287 2N6285 2N6283 2N6286 2N6284 2N62B7 2N62B7 2N6263 2N6266

    transistor BUX 44

    Abstract: transistor BUX BUX87 bux86 transistor BF 414
    Text: A TELEFUNKEN ELECTRONIC 17E D • 0 ^ 2 0 0 % OOb'iST? ? ■ AL66 BUX 86 - BUX 87 TTIUIFy MKIM electronic Creative Tfechnotog* * T - 2 3 - D 9 Silicon NPN Power Transistors Applications: Switching mode power supply, driver circuits Features: • in multi diffusion technique


    OCR Scan     		PDF 15A3DI transistor BUX 44 transistor BUX BUX87 bux86 transistor BF 414

    2n6491

    Abstract: No abstract text available
    Text: r z T SGS-THOMSON Ä 7 # KflOtgœilLieraiSiOOS 2N6486/87/88 2N6489/90/91 COMPLEMENTARY SILICON POWER TRANSISTORS . 2N6487, 2N6488, 2N6489 AND 2N6490 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N6486, 2N6487 and 2N6488 are silicon epitaxial-base NPN transistors mounted in Jedec


    OCR Scan     		PDF 2N6486/87/88 2N6489/90/91 2N6487, 2N6488, 2N6489 2N6490 2N6486, 2N6487 2N6488 O-220 2n6491

    4902N

    Abstract: 2N64
    Text: MOTOROLA Order this document by 2N6487/D SEMICONDUCTOR TECHNICAL DATA NPN 2N 64 87 Com plem entary Silicon Plastic Power Transistors 2 N6 4 8 8 * PNP . . . designed for use in general-purpose amplifier and switching applications. • • • • 2 N 6 4 90


    OCR Scan     		PDF 2N6487/D 2N6487, 2N6490 2N6488, 2N6491 -220A 21A-06 O-220AB 4902N 2N64

    Untitled

    Abstract: No abstract text available
    Text: r z 7 SCS-THOMSON ^7# 2N6486/87/88 2N6489/90/91 K iltgœ iLiûra *! COMPLEMENTARY SILICON POWER TRANSISTORS . 2N6487, 2N6488, 2N6489 AND 2N6490 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N6486, 2N6487 and 2N6488 are silicon epitaxial-base NPN transistors mounted in Jedec


    OCR Scan     		PDF 2N6486/87/88 2N6489/90/91 2N6487, 2N6488, 2N6489 2N6490 2N6486, 2N6487 2N6488 T0-220

    FET 617

    Abstract: IC 4073 2N6265
    Text: TEtEDYNE COMPONENTS flilTbOS O Q O b S m H EflE D NPN/PNP 7 - z - h 2N6282 thru 2N6287 COMPLEMENTARY DARLINGTON POWER AMPLIFIERS I T O -3 GEOMETRY 509-1 • NPN 2N6282-84 • PNP2N6285-87 • High Gain • Monolithic Construction . r - Coaecfot connected locate


    OCR Scan     		PDF 2N6282-84 PNP2N6285-87 2N6282 2N6287 2N6283 2N6284 2N6286 2N6287 200mA FET 617 IC 4073 2N6265

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON [M g[^ H[Li(gïï[Rή!0 i B U L 87 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • . . ■ . . SGS-THOMSON PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS LOW BASE-DRIVE REQUIREMENTS VERY HIGH SWITCHING SPEED


    OCR Scan     		PDF BUL87

    C369 transistor

    Abstract: transistor C369 C369 H12E BCW87 Q62702 transistor 7g
    Text: BCW 87 NPN Silicon planar A F transistor The epitaxial silicon planar AF transistor in its herm etically sealed glass/ceram ic flat package is especially suited fo r use in m ilitary and space applications. The advantage of this particular package lies in its high packing density.


    OCR Scan     		PDF BCW87 Q62702 C369 transistor transistor C369 C369 H12E BCW87 Q62702 transistor 7g

    MEL709D

    Abstract: TB 006 sec 73 s
    Text: CKO MÜL'/ÜVLf NPN SILICON PHOTO TRANSISTOR DESCRIPTION *4.98 0.196 MEL709D is NPN silicon photo­ transistor with external base connection and built in a standard T -l 3/4 (5mm) light rejective epoxy package. 87 (0.34) A ll dim ension in m m (inch) No Scale


    OCR Scan     		PDF MEL709D 950nm. TB 006 sec 73 s