Untitled
Abstract: No abstract text available
Text: 820 840 860 Hand-Held DSO/DMM 20Mhz [820], 40MHz [840], 60MHz [860] bandwidths Models 840 and 860 include FFT Built in High accuracy 6000 count True RMS DMM 125KB record length for each channel 200MS/s sampling rate single channel and 100MS per
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125KB
20Mhz
40MHz
60MHz
200MS/s
100MS
100MS/s
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Fermionics Lasertech
Abstract: 910nm LCX56-860-SLD 80mA
Text: Fermionics Lasertech, Inc. Fiber Optic Light Sources PART NUMBER LCX56-860-SLD 860nm Superluminescent Diode DESCRIPTION LCX56-860-SLDs are superluminescent diodes developed as light sources for use in the fields of optical measurement and communications. The diode is packaged in a 5.6mm or 9mm TO package
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LCX56-860-SLD
860nm
LCX56-860-SLDs
12x50
Fermionics Lasertech
910nm
LCX56-860-SLD
80mA
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L-7113F3C
Abstract: L-7104F3C
Text: INFRARED EMITTING DIODES L-34F3C Part No. L-7104F3C Material λP nm Lens Type GaAs 940 water clear L-34F3BT GaAs 940 blue transparent L-34SF4BT L-34SF6C L-34SF6BT L-34SF7C L-34SF7BT GaAlAs GaAlAs GaAlAs GaAlAs GaAlAs GaAlAs 880 880 860 860 850 850 Po (mW/sr)
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L-34F3C
L-7104F3C
L-7113F3C
L-34F3BT
L-34SF4C
L-34SF4BT
L-34SF6C
L-34SF6BT
L-34SF7C
L-7113F3C
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KC82860
Abstract: Intel 8237 dma Intel 8237 dma controller ICH2 Intel 8237 P64H intel for 8237
Text: R Intel 860 Chipset: 82860 Memory Controller Hub MCH Specification Update May 2001 Notice: The Intel 860 chipset may contain design defects or errors known as errata which may cause the product to deviate from published specifications. Current characterized errata are documented in this Specification Update.
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PF03
Abstract: No abstract text available
Text: Preliminary Data Sheet PF03, PFO4 40-860 MHz. Ultra-linear Opto Receiver Amplifier Features Ultra High Linearity with Low Noise Independent DC Supply pin for Optical diode PFO4 Model Available connectors & applicable dash #’s FC/APC - FCAPC SC/APC - SCAPC
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1300nm.
PF03
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XTHI30BF860
Abstract: No abstract text available
Text: T-1 3mm INFRA-RED EMITTING DIODE SUN LED Email : sales@us.sunled.com Web Site : www.sunled.com XTHI30BF860 Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.25(0.01") unless otherwise noted. Absolute maximum ratings (TA=25°C) THI /860
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XTHI30BF860
1/100Duty
XDSA2677
THI/860
XTHI30BF860
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XTHI30W860
Abstract: No abstract text available
Text: T-1 3mm INFRA-RED EMITTING DIODE SUN LED Email : sales@us.sunled.com Web Site : www.sunled.com XTHI30W860 Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.25(0.01") unless otherwise noted. Absolute maximum ratings (TA=25°C) THI /860
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XTHI30W860
1/100Duty
30W860
XDSA2676
THI/860
XTHI30W860
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2596
Abstract: No abstract text available
Text: Rectifier Diode SXXHN/HR860 Symbol Characteristics Conditions TJ 0C Value Unit V = VRRM 180 180 200-2000 50 V mA 860 A 1350 A 16000 A 1280 kA2S BLOCKING PARAMETERS VRRM IRRM Repetitive peak reverse voltage Repetitive peak reverse current CONDUCTING PARAMETERS
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SXXHN/HR860
10000C
June-2008
2596
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c 2785
Abstract: No abstract text available
Text: 5082-2785 SCHOTTKY MEDIUM BARRIER DIODE PACKAGE STYLE 860 DESCRIPTION: The ASI 5082-2785 is a Medium Barrier Schottky Diode designed for General Purpose Mixer Applications. FEATURES INCLUDE: • Small size • Low noise fugure MAXIMUM RATINGS: PDISS 125 mW @ TA = 25 °C
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fluke 863
Abstract: Fluke 863 gmm Fluke 75 Multimeter IEC-1010-1 digital multimeter circuit FLUKE 75 Fluke 16 Multimeter multimeter 7217 Fluke 867B
Text: Serie 860 Graphical Multimeter Leistungsfähige Multimeter mit Graphik- und Protokollierungsmöglichkeiten Neu Echteffektiv CAT III-1000V Leistungsmerkmale 863 867B 32.000 32.000 Echteffektivwert-Messungen ● ● AutoDiode™ ● ● Hochohmiger Eingang
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III-1000V
SC860
RS-232-Kabel
fluke 863
Fluke 863 gmm
Fluke 75 Multimeter
IEC-1010-1
digital multimeter circuit
FLUKE 75
Fluke 16 Multimeter
multimeter
7217
Fluke 867B
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Untitled
Abstract: No abstract text available
Text: HSCH6312 SCHOTTKY MIXER/DETECTOR DIODE DESCRIPTION: The HSCH6312 is a Hermatically Sealed , Silicon Medium Barrier Schottky Mixer/Detector Diode Designed for X-Band Operation. PACKAGE STYLE 860 MAXIMUM RATINGS I 20 mA V 4.0 V PDISS 150 mW @ TC = 25 OC TJ -65 OC to +175 OC
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HSCH6312
HSCH6312
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DIODE aay 49
Abstract: 100MF 63V GE DIODE diode l19 AAY49 M175 SD1660 si diode
Text: SD1660 RF & MICROWAVE TRANSISTORS 800/900 MHz APPLICATIONS . . . . . . 860 - 900 MHz 24 VOLTS CLASS AB PUSH PULL INTERNAL INPUT MATCHING DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION FOR HIGH RELIABILITY DIFFUSED EMITTER BALLAST
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SD1660
SD1660
DIODE aay 49
100MF 63V
GE DIODE
diode l19
AAY49
M175
si diode
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Untitled
Abstract: No abstract text available
Text: SKS 1270F B6U 860 V16 Characteristics Symbol Conditions min. typ. max. Unit 1270 A 950 1420 A 870 1740 A 1600 V Electrical Data Id Tamb = 35°C no overload 150 % overload, 60s every 10 min. 200 % overload, 60s every 10 min. VCES SEMISTACK Diode Three-phase controlled
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1270F
P16/300F
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SLD-850-DIP
Abstract: Fermionics Lasertech SLD-850 high power 850nm ld DIODE 35
Text: Fermionics Lasertech, Inc. Fiber Optic Light Sources PART NUMBER SLD-850-DIP 850nm Superluminescent Diode DESCRIPTION SLD-860-DIPs are high powered superluminescent diodes with low coherence for fiber-optic gyro and other sensing applications. The diode is packaged in a 14 pin DIP with a thermo-electric cooler.
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SLD-850-DIP
850nm
SLD-860-DIPs
120mA
SLD-850-DIP
Fermionics Lasertech
SLD-850
high power 850nm ld
DIODE 35
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push pull class AB RF linear
Abstract: R767 SD1492 BOX63B 400S M175 GE DIODE
Text: SD1492 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS . . . . . 470 - 860 MHz 28 VOLTS CLASS AB PUSH PULL DESIGNED FOR HIGH POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST RESISTORS COMMON EMITTER CONFIGURATION INTERNAL INPUT MATCHING POUT = 150 W MIN. WITH 6.5 dB GAIN
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SD1492
SD1492
push pull class AB RF linear
R767
BOX63B
400S
M175
GE DIODE
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Germanium itt
Abstract: thyratron pl 21 Mallory Vibrator Data Book National Electronics ignitrons bat CR Li Mn lab test result Helipot POTENTIOMETER Bendix Transistors selenium rectifier westinghouse 5000W AUDIO AMPLIFIER 6cl6
Text: 1q5 OCZ CHICAGO, 5' Three Regional Conventions SHARE THOS Pleose Route COPY! to www.americanradiohistory.com ,titiSCON 1956 the replacement for tubular ceramic and mica capacitors RMC DISCAPS 520 .260 .860 .890 RMC RMC .570 .355 .400 1.290 .760 .790 RMC 470
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P-100
N-1500
N-2200
Germanium itt
thyratron pl 21
Mallory Vibrator Data Book
National Electronics ignitrons
bat CR Li Mn lab test result
Helipot POTENTIOMETER
Bendix Transistors
selenium rectifier westinghouse
5000W AUDIO AMPLIFIER
6cl6
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P1700-1615
Abstract: kt87 KT860 KT870 KT872 dual Phototransistor side dual Phototransistor slotted SITN C-KT862 Transmissive Optical Sensor 3 pin
Text: 860 00061 6798580 OPTEK TECHNOLOGY INC OP TE K T E C H N O L O G Y Üt INC D »E | t 7 1 S S 8 D ' OOQODkl OPTEK SLOTTED OPTICAL SWITCHES PHOTOTRANSISTOR OUTPUT Optek Technology, Inc. 345 Industrial Blvd. McKinney, Texas 75069 214 542-9461 KT 860/870/880/890 SERIES
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KT860/KT870
P1700-1615
kt87
KT860
KT870
KT872
dual Phototransistor side
dual Phototransistor slotted
SITN
C-KT862
Transmissive Optical Sensor 3 pin
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KT860
Abstract: KT870 KT872 5 PIN JS5 IC lfr-20 Y405
Text: 6 7 9 8 5 8 0 OPTEK TECHNOLOGY OPTEK TECHNOLOGY 860 INC INC lib 0 0061 D DE IbTTÖSfiD ' 000DDL.1 OPTEK SLO TTED O P T IC A L SW ITCH ES PH O TO TRA N SISTO R OUTPUT Optek Technology, Inc. 345 Industrial Blvd. McKinney, Texas 75069 214 542-9461 KT 860/870/880/890 SERIES
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KT860/KT870
KT860
KT870
KT872
5 PIN JS5 IC
lfr-20
Y405
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Untitled
Abstract: No abstract text available
Text: Infrared Emitting Diodes 3mm Round Q 2 *5 TNI30W GaAs Water Clear 940 1.2 1.6 TNI30BF GaAs Blue Transparent 940 1.2 1.6 THI30W GaAIAs Water Clear 880 1.3 1.6 THI30BF GaAIAs Blue Transparent 880 1.3 1.6 2 THI30W860 GaAIAs Water Clear 860 1.35 1.6 *10 THI30BF860
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TNI30W
TNI30BF
THI30W
THI30BF
THI30W860
THI30BF860
THI30W850
THI30BF850
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sm08 diode
Abstract: SM12CXC220 CXC220 DDD171S westinghouse overload YS100
Text: ' 34 9709955 WESTCODE DEl^TtmSS SEM ICONDUCTORS 34C 01712 D 7 ^ 0 / - 2-3 D0 Q171 5 b I \ Technical Publication WESTCODE ® SEMICONDUCTORS DFC220 Issue 1 February 1981 Fast Recovery Capsule Diode Type CXC220 860 amperes average: up to 1600 volts V RRM R atings
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D0D1715
CXC220
DFC220
0460A
1000-2000Kgf
200AB
sm08 diode
SM12CXC220
DDD171S
westinghouse overload
YS100
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L9110
Abstract: DIODE aay 49
Text: /T T SGS-THOMSON ^7# SD1492 RF & MICROWAVE TRANSISTO RS _ TV/LINEAR APPLICATIONS • . ■ . . ■ . ■ . 470 - 860 MHz 28 VOLTS CLASS AB PUSH PULL DESIGNED FOR HIGH POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST RESISTORS
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SD1492
SD1492
L9110
DIODE aay 49
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toshiba c660
Abstract: No abstract text available
Text: TOSHIBA TMP47C660N, TMP47C860N TMP47C660DF, TMP47C860DF CMOS 4—Bit Microcontroller The 47C660/860 have extended I/O ports and A/D converter based on the TLCS-470 series. TM P47C660N, TMP47C860N TMP47C660DF, TMP47C860DF OTP Piggyback S D IP 4 2 TM P47P860N
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TMP47C660N,
TMP47C860N
TMP47C660DF,
TMP47C860DF
47C660/860
TLCS-470
P47C660N,
toshiba c660
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DIODE REDRESSEMENT herrmann
Abstract: DIODE REDRESSEMENT REDRESSEMENT Herrmann diode k6 Diodes de redressement
Text: f HERRNANN T- O I '2 3 KG ^^3^275 QOOOOTO 3 •HRHN Dioden, Avalanche-Dioden Rectifier Diodes, Avalanche Diodes Diodes de redressement, Diodes avalanche Diodentyp Type of diode Type de diode . HD 400/04-1 06 V V A A 430 860 6800 231200 60 450 707 7750 300000
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443b27S
DIODE REDRESSEMENT herrmann
DIODE REDRESSEMENT
REDRESSEMENT
Herrmann
diode k6
Diodes de redressement
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TMP47P1660V
Abstract: No abstract text available
Text: TOSHIBA TMP47C1260/1660 CMOS 4-BIT MICROCONTROLLER TMP47C1260N, TMP47C1660N TMP47C1260F , TMP47C1660F The 47C1260/1660 are the high speed and high performance 4-bit single chip microcomputer, w ith large capacity ROM and RAM, based on the 47C660/860 TLCS-470 series .
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TMP47C1260/1660
TMP47C1260N,
TMP47C1660N
TMP47C1260F
TMP47C1660F
47C1260/1660
47C660/860
TLCS-470
TMP47C1260N
TMP47C1260F
TMP47P1660V
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