UT34-50
Abstract: 125mu pot 10k zener diode c5 10NF 1201W 20PF 470PF LQ821 22AWG
Text: RF iN UT34-50 2.5In. LOnG T1 C3 470PF 125MU fErritE C1 15PF C2 1NF PcB trAce Pcb tRace LQ821 22AWG 4 TurNs .075in. diA 4 tuRnS 22AWG .075iN. diA 10K 2 R1 1201W C4 20PF C10 10NF R2 120 850mu terroid 22AWG 3 tUrnS .075iN. dIa 22AWG 9 turns .075 iN. dia C11 10NF
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UT34-50
470PF
125MU
LQ821
22AWG
075in.
22AWG
850mu
UT34-50
pot 10k
zener diode c5
10NF
1201W
20PF
LQ821
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159C
Abstract: TB159C SR401 SR-401 470PF UT34-17 10NF Torroid 125mu 100WPEP
Text: C17 22uF Tantalum Vds=28Vdc 850mu Torroid 10K Pot OUT V Regulator IN ADJUST L14 18AWG 5turns .130in dia C13 10NF T2 R2 15 T1 C4 470PF C15 L18 18AWG 10NF 15turns C16 47UF63V Electrolytic R7 10K T3 R3 10K C7 470PF UT34-17 UT 85-15 T4 RF out C5 8.2 PF UT56-50
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28Vdc
850mu
18AWG
130in
470PF
15turns
47UF63V
UT34-17
159C
TB159C
SR401
SR-401
470PF
UT34-17
10NF
Torroid
125mu
100WPEP
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SR746
Abstract: 10k pot 108MHz resistor of 47ohm 01UF 01UFD 18PF 20AWG 470PF 47UF
Text: RF In 1 C1 470PF C2 15PF 4 C3 15PF R6 15 10 2 C8 0.01UFD L1 56NH R1 10K 5 10K Pot 3 6 12 SA741 18AWG 7 C4 20PF 2.2 inches 8 C5 13PF Terroid 14 turns 20AWG 850mu 20AWG 9 390 ohm 1/2 W Zener D1 6.8V R3 2.2K RF Out R5 10K C6 .01UF RF in 47uf 100V Vds=50Vdc C1
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470PF
01UFD
SA741
20AWG
18AWG
850mu
50Vdc
1000PF
265in
SR746
10k pot
108MHz
resistor of 47ohm
01UF
01UFD
18PF
20AWG
470PF
47UF
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b16 zener
Abstract: zener diode c5 C61NF transistor Z2 zener c2 10KPOT 20pf B16 diode C710 zener z2
Text: RFin C1 7.5PF 1 3 turns C2 20PF L1 22AWG 2 C31NF 3 Gendiode R6 10K 10KPot 1/2turn L2 22AWG 16 14 Zener Gendiode 15 4 8 12 L2821 R1180 5 9 22ohm 1/2W R43.9K 7 6 C61NF 4/10/01 C5 9.1PF 1/2turn L322AWG 22AWG 12turns C710NF 850mu terroid C847UF,25V C4 10NF 11
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22AWG
C31NF
10KPot
L2821
R1180
22ohm
C61NF
L322AWG
b16 zener
zener diode c5
C61NF
transistor Z2
zener c2
10KPOT
20pf
B16 diode
C710
zener z2
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Untitled
Abstract: No abstract text available
Text: TB111-A Pout/Gain vs Pin Freq=110MHz;Vds=12.5Vdc Idq=.6A 35.0 14 12 10 30.0 Pout 8 Efficiency @10W = 60% 6 25.0 4 Gain 2 20.0 0.01 0.02 0.03 0.04 0.05 0.06 Pin in Watts 0.07 0.08 0.09 0.1 TB111-A Pout/Gain vs Pin Freq=88MHz;Vds=12.5Vdc Idq=.6A 16 31.0 29.0
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TB111-A
110MHz
88MHz
10MHz
22AWG
850mu
22AWG
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TB223
Abstract: amidon BN-61-202
Text: June 22, 2012 TB223 Frequency=20-35MHz Pout=30W Gain=17dB Vds=24Vdc Idq=0.4A Efficiency=30 to 58% L2701 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com June 22, 2012 TB223 Pout/Gain vs Pin: Freq=20 MHz, Vds=24Vdc, Idq=0.4A
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TB223
20-35MHz
24Vdc
L2701
TB223
24Vdc,
17-turn,
850mu
amidon BN-61-202
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TB192
Abstract: UT-085 UT-085C-FORM-F r4 4.7k SQ202 120p
Text: TB192 Pout/Gain vs Pin f=870MHz Vds=28Vdc Idq=.4A 16 13.5 13 12.5 Pout 11 11.5 P1dB=10W 8 10.5 Gain 6 Efficiency@10W = 27% 9.5 3 1 8.5 0.5 1 1.5 2 Pin in Watts TB192 Gain/Efficiency vs Freq Vds=28Vdc Idq=.4A 12 50.0 45.0 9 Gain 40.0 Pout fixed at 10W 6 35.0
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TB192
870MHz
28Vdc
850mu
UT-085C-FORM-F
SQ202
UT-085
UT-085C-FORM-F
r4 4.7k
SQ202
120p
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TB-163
Abstract: SQ201 10NF 470PF UT34-50
Text: T B - 1 6 3 S Q 2 0 1 G a i n /E f f i c i e n c y v s F r e q u e n c y ; V d s = 2 8 V d c I d q = . 4 A 16 100 90 80 12 70 60 Gain 8 50 Pout fixed at 4W 40 Efficiency 30 4 20 10 50 100 150 200 250 300 350 400 450 500 550 Freq in MHz TB-163 SQ201 Pout vs Pin Freq=250MHz Vds=28Vdc Idq=400ma
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TB-163
SQ201
250MHz
28Vdc
400ma
30MHz
10NF
470PF
UT34-50
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TB201
Abstract: NJM78L08 20AWG SK204 SK2042
Text: TB201 SK204 Freq=610MHz Vds=28Vdc Idq=1A 35 15.0 Linear @2.3W 28 14.0 Pout 21 13.0 14 12.0 Gain P1dB=10W 7 11.0 Efficiency @34W= 37% 0.0000 1.0000 10.0 3.0000 2.0000 Pin in Watts TB201 SK204 Freq=785MHz Vds=28Vdc Idq=1A 35 15.0 Linear @2W 28 14.0 Pout 21 13.0
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TB201
SK204
610MHz
28Vdc
785MHz
NJM78L08
20AWG
SK2042
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TB224
Abstract: D02BZ2 Amidon ferrite
Text: October 31, 2012 TB224 Frequency=30-512MHz Pout=1.5W Gain=10dB Vds=28Vdc Idq=0.2A Efficiency=13-18% SP201 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com October 31, 2012 TB224 Pout/Gain vs Pin: Freq=30MHz, Vds=28Vdc, Idq=0.2A
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TB224
30-512MHz
28Vdc
SP201
TB224
30MHz,
28Vdc,
250MHz,
D02BZ2
Amidon ferrite
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TB146
Abstract: L2821 Z4 51
Text: TB-146 Pin vs Pout Freq=850MHz Vds=12.5Vdc Idq=.4A 8 12.0 P1dB=4W 6 Pout 11.0 Gain 10.0 4 2 Efficiency = 45% 9.0 0.2 0.4 0.6 0.8 1 Pin in Watts TB146, L2821; Vds=12.5Vdc Idq=.8A, 850MHz -27 -31 -35 -39 -43 -47 -51 -55 -59 -63 -67 -71 -75 3rd Order 5th Order
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TB-146
850MHz
TB146,
L2821;
850MHz
450in
325in,
070in
050in,
TB146
L2821
Z4 51
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SR746
Abstract: TB183D 20AWG 47UF Polyfet RF Devices SR341
Text: Polyfet RF Devices TB183D SR746 Gain/Efficiency vs Freq; Vds=50Vdc Idq=1A 80 70 70 60 60 50 Gain Pout fixed at 300W 40 Efficiency Eff in % Gain in dB 50 40 30 30 20 20 10 10 2 4 6 8 10 12 14 16 Freq in MHz Page 1 18 20 22 24 26 28 30 Polyfet RF Devices 1.5MHz Chart 1
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TB183D
SR746
50Vdc
50Vdc
850mu
850mu
21ohm
20AWG
47UF
Polyfet RF Devices
SR341
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TB162
Abstract: LK401 10NF 18PF 47PF 47UF pot B 10K ohm 5 pin 850mu UT75-10 UT85-5
Text: T B - 1 6 2 L K 4 0 1 F r e q v s G a i n /E f f i c i e n c y ; V d s = 2 8 V d c I d q = . 8 A 16 100 90 14 80 70 Gain 12 Pout fixed at 60W 60 10 50 40 8 30 Efficiency 6 20 50 100 150 200 250 300 350 400 450 500 550 F r e q i n M H z TB-162 LK401 Pin vs Pout Freq=250MHz Vds=28Vdc Idq=800ma
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TB-162
LK401
250MHz
28Vdc
800ma
30MHz
TB162
10NF
18PF
47PF
47UF
pot B 10K ohm 5 pin
850mu
UT75-10
UT85-5
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Tb148
Abstract: c815 C530 01UF 18PF 30PF LP722
Text: Tb148 TB-148 Pin vs Pout Fr=460MHz Vds=12.5 Vdc Idq=0.4A 40 14.0 35 13.0 Linear @ 10W Pout 30 12.0 25 11.0 20 10.0 15 Gain in dB Pout in Watts P1dB=25W Gain 9.0 Efficiency@30W=55% 10 8.0 5 7.0 0.5 1 1.5 2 2.5 3 Pin in Watts 3.5 4 4.5 5 5.5 6 TB-148 Freq vs Gain/Efficiency; VDS=12.5Vdc Idq=.4A
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Tb148
TB-148
460MHz
10KPOT
24AWG
LP722
450-470MHz,
850mu
Tb148
c815
C530
01UF
18PF
30PF
LP722
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TB176
Abstract: amidon BN-61-202 UT85-15 BN61202 amidon BN-61-202 UT85-50 UT75-10 UT85 50 47UF
Text: R F in C1 11 P F 3 .5 in . 125m u U T 8 5 -5 0 R4 10K C2 39NF C4 39NF R5 10K A S p lit to "A " a n d "B " 3 .5 in . 125m u U T 7 5 -1 0 A 5W 12oh m SR401 C 6 1 .2 N F R2 15 R3 15 C 7 1 .2 N F 18AW G 9 tu rns 1 18AW G 1 4 tu rn s R 7 2 .2 K 3 .5 in . 125m u
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SR401
SR401
28Vdc
30-174Mhz
ATC-100B
R01-02
850mu
125mu
TB176
amidon BN-61-202
UT85-15
BN61202
amidon
BN-61-202
UT85-50
UT75-10
UT85 50
47UF
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TB164
Abstract: gP DIODE S8201 GP 015 DIODE 12W15
Text: T B - 1 6 4 S 8 2 0 1 G a i n /E f f i c i e n c y v s F r e q u e n c y ; V d s = 2 8 V d c I d q = . 2 A 16 100 90 80 12 70 60 Gain 8 50 Pout fixed at 1.5W 40 Efficiency 30 4 20 10 50 100 150 200 250 300 350 400 450 500 550 Freq in MHz TB-164 S8201 Pout vs Pin Freq=250MHz Vds=28Vdc Idq=200ma
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TB-164
S8201
250MHz
28Vdc
200ma
250mw
30MHz
TB164
gP DIODE
GP 015 DIODE
12W15
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TB147
Abstract: 450-470MHZ 01UF 22PF 33PF 470PF LP821
Text: Tb147 TB-147 Pin vs Pout Freq=460MHz Vds=12.5 Vdc Idq=.4A 14 18.0 Linear@2W 17.0 12 16.0 Pout 15.0 P1dB=7W 14.0 8 13.0 6 12.0 Gain in dB Pout in Watts 10 Gain 4 11.0 Efficiency@10W=54% 10.0 2 9.0 8.0 0.2 0.4 0.6 0.8 1 Pin in Watts 1.2 1.4 1.6 1.8 2 TB-147 Gain & Efficiency flatness; VDS=12.5Vdc Idq=.4A
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Tb147
TB-147
460MHz
68OHM
470PF
LP821
850mu
450-470MHz,
TB147
450-470MHZ
01UF
22PF
33PF
470PF
LP821
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TB227
Abstract: LP801
Text: November 21, 2013 TB227 Frequency=10-100MHz Pout=10W Gain=13dB Vds=28Vdc Idq=0.2A Efficiency=55% Typical LP801 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com November 21, 2013 PH:(805)484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012
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TB227
10-100MHz
28Vdc
LP801
1111X103KW500
1111N102GW500
P5312-ND
FT-37-43
-FT-37-43
FT-50-43
TB227
LP801
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TB182
Abstract: amidon ATC100B UT43-10 LR401 ATC200B ATC-200B 125mu BN-61-2102 10NF
Text: T B - 1 8 2 L R 4 0 1 G a i n /E fficiency vs Freq; Vds=28Vdc Idq=1A 80 70 70 60 60 50 50 Efficiency Pout fixed at 100W 40 40 30 30 Gain 20 20 10 10 100 200 300 400 500 Freq in MHz T B - 1 8 2 P o u t /G a i n v s P i n F r e q = 1 0 0 M H z V d s = 2 8 V d c
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28Vdc
TB-182
300MHz
28Vdc
15ohm
ATC-700B
R01-6
ATC-100B
470pf
TB182
amidon
ATC100B
UT43-10
LR401
ATC200B
ATC-200B
125mu
BN-61-2102
10NF
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TB181
Abstract: 470PF 10Turns 18AWG R110 UT85-15 01uF UT85 50 33PF 47UF
Text: RF IN 19 L=4in UT56-50 C1 9.1PF 4 3 C3 470PF 2 Turns, 22awg 2 1 C4 470PF 2 Turns, 22awg 5 7 31 R2 10 C6 .01UF Ferrite=40mu UT34-17 L=2.7in 8 R1 10 9 SR704 6 10 27 26 R6 10K R5 2.2K R3 5.6K C5 .01UF 10K POT 11 7.5V Zener 12 16 13 C8 47UF 100V 15 Noah Xiong
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UT56-50
470PF
22awg
470PF
UT34-17
SR704
UT85-15
18AWG
240PF
TB181
10Turns
18AWG
R110
UT85-15
01uF
UT85 50
33PF
47UF
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TB206
Abstract: LR501 78L08 16AWG 160RF
Text: TB206 LR501, RF out/Gain vs RF in, Vds=28Vdc, Idq=0.8A, Freq=160MHz 20.0 220 200 19.5 180 160 RF out 19.0 140 Gain 120 18.5 100 P1dB at 200W 80 18.0 60 40 17.5 20 17.0 0.5 1 1.5 2 2.5 3 3.5 4 RF in Watts TB206 LR501, RF out/Gain vs RF in, Vds=28Vdc, Idq=0.8A, Freq=230MHz
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TB206
LR501,
28Vdc,
160MHz
230MHz
LR501
78L08
16AWG
160RF
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171B
Abstract: TB171B 20AWG LP721
Text: Polyfet RF Devices TB171B Vds=12.5Vdc Idq=0.6A Efficiency=60% at 15W Pout=15W LP721 Frequency=450-470 MHz TB-171B G ain/Efficiency vs Freq; VDS=12.5Vdc Idq=0.6A 20 70 18 60 50 Efficiency Gain 16 Pout fixed at 15W 40 14 30 12 20 10 10 8 450 452 454 456 458
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TB171B
LP721
TB-171B
450MHz
850mu
20AWG
18AWG
190mils
171B
TB171B
LP721
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TB188
Abstract: TB-188 850mu 20AWG 47UF F2001 SQ701
Text: TB188 Pout/Gain vs Pin Freq=1.5Mhz;Vds=24Vdc Idq=1.75A 40 40.0 38.0 36.0 32 P1dB =20W 34.0 Pout 32.0 24 30.0 28.0 16 26.0 Efficiency @20W = 45% 24.0 Gain 8 22.0 20.0 18.0 0.1 0.2 0.3 Pin in Watts 0.4 0.5 TB188 F2001->SQ701 Gain/Efficiency vs Freq; Vds=24Vdc Idq=1.75A
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TB188
24Vdc
F2001--
SQ701
24Vdc
TB-188
850mu
20AWG
47UF
F2001
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TB217
Abstract: PORCELAIN
Text: May 16, 2012 TB217#3 Frequency=30-512MHz Pout=10W Gain=10dB Vds=28Vdc Idq=0.2A Efficiency=30 to 55% LP801 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com May 16, 2012 TB217#3 Gain/Efficiency vs Frequency: Vds=28Vdc, Idq=0.2A, Pout=10W
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TB217
30-512MHz
28Vdc
LP801
28Vdc,
30MHz
RHM10kECT-ND
PORCELAIN
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