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    LP721 Price and Stock

    SICK AG GL6L-P7212

    Laser Sensor, 12M, Pnp, 30Vdc Rohs Compliant: Yes |Sick GL6L-P7212
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    Newark GL6L-P7212 Bulk 1
    • 1 $340.27
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    Others TLP721FD4GRTP4M

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    Chip 1 Exchange TLP721FD4GRTP4M 10,000
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    Toshiba America Electronic Components TLP721F(D4-GR,M,F)

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    Chip 1 Exchange TLP721F(D4-GR,M,F) 6,232
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    Toshiba America Electronic Components TLP721F

    OFFICE MACHINE SWITCHING POWER SUPPLY.
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    Win Source Electronics TLP721F 800
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    LP721 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    LP721 Polyfet RF Devices SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR Original PDF
    LP721 Polyfet RF Devices SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR Original PDF

    LP721 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    L271

    Abstract: 01UF 100OHM 180PF 33PF L2711 LP721
    Text: LP721 7.5V Chart 1 L2711 Pin vs Pout F=500 MHZ; Idq=.4;Vds=7.5V 13 8 7 12 POUT IN WATTS 6 5 Gain 11 4 3 Efficiency = 55% 10 2 1 9 0.1 0.2 0.3 0.4 0.5 PIN IN WATTS Page 1 0.6 0.7 0.8 0.9 GAIN IN DB Pout Vgs 7.5Vdc 8 7 R1 8.2KOHM C1 33PF RFin 1 2 .8-18pf L1 4.7NH


    Original
    LP721 L2711 8-18pf 100OHM 22awg L2711 180PF L271 01UF 100OHM 180PF 33PF PDF

    LP721

    Abstract: No abstract text available
    Text: polyfet rf devices LP721 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE


    Original
    LP721 LP721 PDF

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices LP721 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE


    Original
    LP721 PDF

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices LP721 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.


    Original
    LP721 PDF

    171B

    Abstract: TB171B 20AWG LP721
    Text: Polyfet RF Devices TB171B Vds=12.5Vdc Idq=0.6A Efficiency=60% at 15W Pout=15W LP721 Frequency=450-470 MHz TB-171B G ain/Efficiency vs Freq; VDS=12.5Vdc Idq=0.6A 20 70 18 60 50 Efficiency Gain 16 Pout fixed at 15W 40 14 30 12 20 10 10 8 450 452 454 456 458


    Original
    TB171B LP721 TB-171B 450MHz 850mu 20AWG 18AWG 190mils 171B TB171B LP721 PDF

    LDMOS 15w

    Abstract: LP721
    Text: polyfet rf devices LP721 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE


    Original
    LP721 LDMOS 15w LP721 PDF

    LP721

    Abstract: LDMOS
    Text: polyfet rf devices LP721 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.


    Original
    LP721 LP721 LDMOS PDF

    10NF

    Abstract: 30PF 470PF 47PF 47UF LP721 TB-174
    Text: 6 Volt VDD R F in C1 43P F C6 1NF G e n d io d e R1 10K 10K Pot 3 tu rn s 22AW G .0 7 8 " d ia 2 .7 V z e n e r R2 100 C9 .0 1 U F .0 7 8 " d ia 22AW G 4 tu rn s R 4 120 C10 47PF LP721 10 C20 10NF 22AW G 1 0 tu rn s 8 5 0 m u te rro id J.Citrolo 3 tu rn s


    Original
    LP721 120PF Lp721 600ma TB-174 138-153Mhz 470PF 10NF 30PF 470PF 47PF 47UF PDF

    MGCF21

    Abstract: LY942 MOSFET 50 amp 1000 volt Gx4002 5 watt hf mosfet
    Text: polyfet rf devices LDMOS Flanged Mount Pout Freq Gain theta 28 Volt LDMOS gm Idsat Ciss Crss Coss mho A polyfet rf devices Broad Band RF Power MOSFET LDMOS Transistors Surface Mount Pout Freq Gain theta 12.5 Volt VDMOS S Series gm Idsat Ciss Crss Coss Flanged Mount


    Original
    L8821P LB421 L8821P LP721 SM341 LQ821 SQ701 SR401 MGCF21 LY942 MOSFET 50 amp 1000 volt Gx4002 5 watt hf mosfet PDF

    rf push pull mosfet power amplifier

    Abstract: 100 watt hf mosfet 12 volt 150w amplifier RF VHF 139 144 mhz uhf 150w mosfet 150w amplifier RF VHF 139 - 144 mhz LDMOS 15w ldmos l2711 vhf LP801 LK602 LR941
    Text: polyfet rf devices Broad Band RF Power MOSFET Transistors TB# 178 179 180 181 182 183D 184 185 186 187 188 189 191 192 193A 194 195 196 197 199 200NUM1 201 202 203 204 205 206 207 208 210 211 212 Freq Range 136-174 30-88 50-88 118-165 100-500 1.5-30 1.5-30


    Original
    200NUM1 SQ221 LK822 LK722 LX521 rf push pull mosfet power amplifier 100 watt hf mosfet 12 volt 150w amplifier RF VHF 139 144 mhz uhf 150w mosfet 150w amplifier RF VHF 139 - 144 mhz LDMOS 15w ldmos l2711 vhf LP801 LK602 LR941 PDF

    mcp3021z

    Abstract: P621GB DPC817B DPC-817B p621g P620GB p620-gb TLP622 621-4G Toshiba P521 Photocoupler
    Text: PHOTOCOUPLER CROSS REFERENCE For user’s convenience, the Sharp equivalents in comparison with the other m anufacturers’ products are suggested in this list. The data is prepared on the basis of main electrical and mechanical characteristics, however, Sharp assumes no responsibility for the actual use of the data and for the specifications of other


    OCR Scan
    LP666J LP721 TLP721F LP731 TLP732 PC918 PC702V PC714V mcp3021z P621GB DPC817B DPC-817B p621g P620GB p620-gb TLP622 621-4G Toshiba P521 Photocoupler PDF