L271
Abstract: 01UF 100OHM 180PF 33PF L2711 LP721
Text: LP721 7.5V Chart 1 L2711 Pin vs Pout F=500 MHZ; Idq=.4;Vds=7.5V 13 8 7 12 POUT IN WATTS 6 5 Gain 11 4 3 Efficiency = 55% 10 2 1 9 0.1 0.2 0.3 0.4 0.5 PIN IN WATTS Page 1 0.6 0.7 0.8 0.9 GAIN IN DB Pout Vgs 7.5Vdc 8 7 R1 8.2KOHM C1 33PF RFin 1 2 .8-18pf L1 4.7NH
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LP721
L2711
8-18pf
100OHM
22awg
L2711
180PF
L271
01UF
100OHM
180PF
33PF
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LP721
Abstract: No abstract text available
Text: polyfet rf devices LP721 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE
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LP721
LP721
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Untitled
Abstract: No abstract text available
Text: polyfet rf devices LP721 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE
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LP721
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Untitled
Abstract: No abstract text available
Text: polyfet rf devices LP721 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
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LP721
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171B
Abstract: TB171B 20AWG LP721
Text: Polyfet RF Devices TB171B Vds=12.5Vdc Idq=0.6A Efficiency=60% at 15W Pout=15W LP721 Frequency=450-470 MHz TB-171B G ain/Efficiency vs Freq; VDS=12.5Vdc Idq=0.6A 20 70 18 60 50 Efficiency Gain 16 Pout fixed at 15W 40 14 30 12 20 10 10 8 450 452 454 456 458
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TB171B
LP721
TB-171B
450MHz
850mu
20AWG
18AWG
190mils
171B
TB171B
LP721
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LDMOS 15w
Abstract: LP721
Text: polyfet rf devices LP721 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE
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LP721
LDMOS 15w
LP721
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LP721
Abstract: LDMOS
Text: polyfet rf devices LP721 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
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LP721
LP721
LDMOS
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10NF
Abstract: 30PF 470PF 47PF 47UF LP721 TB-174
Text: 6 Volt VDD R F in C1 43P F C6 1NF G e n d io d e R1 10K 10K Pot 3 tu rn s 22AW G .0 7 8 " d ia 2 .7 V z e n e r R2 100 C9 .0 1 U F .0 7 8 " d ia 22AW G 4 tu rn s R 4 120 C10 47PF LP721 10 C20 10NF 22AW G 1 0 tu rn s 8 5 0 m u te rro id J.Citrolo 3 tu rn s
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LP721
120PF
Lp721
600ma
TB-174
138-153Mhz
470PF
10NF
30PF
470PF
47PF
47UF
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MGCF21
Abstract: LY942 MOSFET 50 amp 1000 volt Gx4002 5 watt hf mosfet
Text: polyfet rf devices LDMOS Flanged Mount Pout Freq Gain theta 28 Volt LDMOS gm Idsat Ciss Crss Coss mho A polyfet rf devices Broad Band RF Power MOSFET LDMOS Transistors Surface Mount Pout Freq Gain theta 12.5 Volt VDMOS S Series gm Idsat Ciss Crss Coss Flanged Mount
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L8821P
LB421
L8821P
LP721
SM341
LQ821
SQ701
SR401
MGCF21
LY942
MOSFET 50 amp 1000 volt
Gx4002
5 watt hf mosfet
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rf push pull mosfet power amplifier
Abstract: 100 watt hf mosfet 12 volt 150w amplifier RF VHF 139 144 mhz uhf 150w mosfet 150w amplifier RF VHF 139 - 144 mhz LDMOS 15w ldmos l2711 vhf LP801 LK602 LR941
Text: polyfet rf devices Broad Band RF Power MOSFET Transistors TB# 178 179 180 181 182 183D 184 185 186 187 188 189 191 192 193A 194 195 196 197 199 200NUM1 201 202 203 204 205 206 207 208 210 211 212 Freq Range 136-174 30-88 50-88 118-165 100-500 1.5-30 1.5-30
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200NUM1
SQ221
LK822
LK722
LX521
rf push pull mosfet power amplifier
100 watt hf mosfet 12 volt
150w amplifier RF VHF 139 144 mhz
uhf 150w mosfet
150w amplifier RF VHF 139 - 144 mhz
LDMOS 15w
ldmos l2711 vhf
LP801
LK602
LR941
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mcp3021z
Abstract: P621GB DPC817B DPC-817B p621g P620GB p620-gb TLP622 621-4G Toshiba P521 Photocoupler
Text: PHOTOCOUPLER CROSS REFERENCE For user’s convenience, the Sharp equivalents in comparison with the other m anufacturers’ products are suggested in this list. The data is prepared on the basis of main electrical and mechanical characteristics, however, Sharp assumes no responsibility for the actual use of the data and for the specifications of other
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LP666J
LP721
TLP721F
LP731
TLP732
PC918
PC702V
PC714V
mcp3021z
P621GB
DPC817B
DPC-817B
p621g
P620GB
p620-gb
TLP622
621-4G
Toshiba P521 Photocoupler
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