RF1131
Abstract: No abstract text available
Text: RF1131 BROADBAND HIGH POWER SP3T SWITCH Package Style: QFN, 12-pin, 2mmx2mm Features Broadband Performance Low Frequency - 2.5GHz Very Low Insertion Loss 0.30dB Typ at 0.90GHz 0.45dB Typ at 1.90GHz High Isolation: 31dB Typ at 1.90GHz P0.1dB>35dBm
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RF1131
12-pin,
90GHz
35dBm
12-pin
IEEE802
11b/g
RF1131
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RF1131
Abstract: DS100406
Text: RF1131 BROADBAND HIGH POWER SP3T SWITCH Package Style: QFN, 12-pin, 2mmx2mm Features Broadband Performance Low Frequency - 2.5GHz Very Low Insertion Loss 0.30dB Typ at 0.90GHz 0.45dB Typ at 1.90GHz High Isolation: 31dB Typ at 1.90GHz P0.1dB>35dBm
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Original
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RF1131
12-pin,
90GHz
35dBm
12-pin
IEEE802
11b/g
RF1131
DS100406
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PDF
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Untitled
Abstract: No abstract text available
Text: RF1132 BROADBAND HIGH POWER SP3T SWITCH Package Style: QFN, 12-pin, 2mmx2mm Features ̈ ̈ ̈ ̈ ̈ ̈ Broadband Performance Low Frequency - 2.5GHz Low Insertion Loss 0.48dB Typ at 0.90GHz 0.68dB Typ at 1.90GHz Good Isolation: 23dB Typ at 1.90GHz Excellent Cross-Modulation
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RF1132
12-pin,
90GHz
-102dBm
-100dBm
34dBm
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PDF
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RA03M8087M-101
Abstract: RA03M8087M
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA03M8087M RoHS Compliance , 806-870MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA03M8087M is a 3.6-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 806 to
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RA03M8087M
806-870MHz
RA03M8087M
870-MHz
RA03M8087M-101
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D408
Abstract: RA03M8087M-E01 RA03M8087M RA03M8087M-01
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA03M8087M 806-870MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA03M8087M is a 3.6-watt RF MOSFET Amplifier Module for 7.2-volt mobile radios that operate in the 806- to 870-MHz range.
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RA03M8087M
806-870MHz
RA03M8087M
870-MHz
av86-2-2833-9793
D408
RA03M8087M-E01
RA03M8087M-01
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"MOSFET Module"
Abstract: 03M8087 marking GG RA03M8087M rara RA03M8087M-101
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA03M8087 RA03M8087M 03M8087M RoHS Compliance , 806-870MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA03M8087M is a 3.6-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 806 to
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RA03M8087M
03M8087
806-870MHz
RA03M8087M
870-MHz
"MOSFET Module"
03M8087
marking GG
rara
RA03M8087M-101
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PDF
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Untitled
Abstract: No abstract text available
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 123456367 1234563675 345636758 RoHS Compliance , 806-870MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA03M8087M is a 3.6-watt RF MOSFET Amplifier
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806-870MHz
RA03M8087M
870-MHz
RA03M8087M
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PDF
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RF1131
Abstract: QFN 36 footprint antenna CDMA GPRS
Text: RF1131 BROADBAND HIGH POWER SP3T SWITCH Package Style: QFN, 12-pin, 2mmx2mm Features Broadband Performance Low Frequency - 2.5GHz Very Low Insertion Loss 0.30dB Typ at 0.90GHz 0.45dB Typ at 1.90GHz High Isolation: 31dB Typ at 1.90GHz P0.1dB>35dBm
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Original
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RF1131
12-pin,
90GHz
35dBm
12-pin
IEEE802
11b/g
RF1131
QFN 36 footprint
antenna CDMA GPRS
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PDF
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869MHz
Abstract: 8680MHz
Text: Golledge Electronics Ltd Eaglewood Park, ILMINSTER Somerset, TA19 9DQ, UK Tel: +44 1460 256 100 Fax: +44 1460 256 101 www.golledge.com SAW Filter 868.0MHz Part No: MP03372 Model: TA1219A Rev No: 1 A. MAXIMUM RATING: 1. Input Power Level: +10dBm 2. DC Voltage: 5V
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MP03372
10dBm
869MHz)
800MHz
838MHz
905MHz
915MHz
970MHz
TA1219A
869MHz
8680MHz
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PDF
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RA03M8087M
Abstract: RA03M8087M-01
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA03M8087M 806-870MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA03M8087M is a 3.6-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 806- to
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Original
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RA03M8087M
806-870MHz
RA03M8087M
870-MHz
RA03M8087M-01
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PDF
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Untitled
Abstract: No abstract text available
Text: RF1132 BROADBAND HIGH POWER SP3T SWITCH Package Style: QFN, 12-pin, 2mmx2mm Features Broadband Performance Low Frequency - 2.5GHz Low Insertion Loss 0.48dB Typ at 0.90GHz 0.68dB Typ at 1.90GHz Good Isolation: 23dB Typ at 1.90GHz Excellent Cross-Modulation
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Original
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RF1132
12-pin,
90GHz
-102dBm
-100dBm
34dBm
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PDF
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Untitled
Abstract: No abstract text available
Text: RF1131 BROADBAND HIGH POWER SP3T SWITCH Package Style: QFN, 12-pin, 2mmx2mm Features Broadband Performance Low Frequency - 2.5GHz Very Low Insertion Loss 0.30dB Typ at 0.90GHz 0.45dB Typ at 1.90GHz High Isolation: 31dB Typ at 1.90GHz P0.1dB>35dBm
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Original
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RF1131
12-pin,
90GHz
35dBm
12-pin
IEEE802
11b/g
RF1131
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PDF
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ETSI-EN-300-220
Abstract: marker beacon antenna TX112-1a MICRF112 TX112 ETSI-EN-300220 433mhz ask remote control antenna 433MHZ PCB TX112-1 CFR47
Text: Application Note 55 How to go Through FCC Compliance Testing Using the MICRF112 Introduction What is Regulatory Compliant Testing? This application note will cover the use of Short Range Devices SRD , which do not require a license for the MICRF112. These devices are mainly known as devices to
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MICRF112
MICRF112.
TX112
M9999-101807-A
ETSI-EN-300-220
marker beacon antenna
TX112-1a
MICRF112
ETSI-EN-300220
433mhz ask remote control
antenna 433MHZ PCB
TX112-1
CFR47
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PDF
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RA03M8087M
Abstract: RA03M8087M-101 transistor marking zg
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA03M8087M RoHS Compliance , 806-870MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA03M8087M is a 3.6-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 806 to
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Original
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RA03M8087M
806-870MHz
RA03M8087M
870-MHz
RA03M8087M-101
transistor marking zg
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PDF
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MRF844
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF844 The RF Line NPN Silicon RF Power TVansistor . . . designed for 12.5 volt UHF large-signal, common-base am plifier applica tions in industrial and commercial FM equipment operating in the range of 8 0 6 -9 6 0 MHz.
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MRF844
MRF844
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