RA03M8087 Search Results

RA03M8087 Datasheets (8)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
RA03M8087M		Mitsubishi	RoHS Compliance , 806-870MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO		Original	PDF
RA03M8087M		Mitsubishi	SILICON MOS FET POWER AMPLIFIER		Scan	PDF
RA03M8087M-01		Mitsubishi	RF MOSFET MODULE - 806-870MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO		Original	PDF
RA03M8087M-01		Mitsubishi	806 - 870 MHz 3.6 W 7.2 V, 2 Stage Amp. for Portable Radio		Original	PDF
RA03M8087M-01		Mitsubishi	IC FET MISC 5H46S		Original	PDF
RA03M8087M-101		Mitsubishi	RoHS Compliance , 806-870MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO		Original	PDF
RA03M8087M-E01		Mitsubishi	RF MOSFET MODULE - 806-870MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO		Original	PDF
RA03M8087M-E01		Mitsubishi	IC FET MISC 5H46S		Original	PDF

RA03M8087 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
RA03M8087M-101 Abstract: RA03M8087M Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA03M8087M RoHS Compliance , 806-870MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA03M8087M is a 3.6-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 806 to	Original	RA03M8087M 806-870MHz RA03M8087M 870-MHz RA03M8087M-101	PDF
D408 Abstract: RA03M8087M-E01 RA03M8087M RA03M8087M-01 Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA03M8087M 806-870MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA03M8087M is a 3.6-watt RF MOSFET Amplifier Module for 7.2-volt mobile radios that operate in the 806- to 870-MHz range.	Original	RA03M8087M 806-870MHz RA03M8087M 870-MHz av86-2-2833-9793 D408 RA03M8087M-E01 RA03M8087M-01	PDF
"MOSFET Module" Abstract: 03M8087 marking GG RA03M8087M rara RA03M8087M-101 Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA03M8087 RA03M8087M 03M8087M RoHS Compliance , 806-870MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA03M8087M is a 3.6-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 806 to	Original	RA03M8087M 03M8087 806-870MHz RA03M8087M 870-MHz "MOSFET Module" 03M8087 marking GG rara RA03M8087M-101	PDF
Untitled Abstract: No abstract text available Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 123456367 1234563675 345636758 RoHS Compliance , 806-870MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA03M8087M is a 3.6-watt RF MOSFET Amplifier	Original	806-870MHz RA03M8087M 870-MHz RA03M8087M	PDF
RA03M8087M Abstract: RA03M8087M-01 Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA03M8087M 806-870MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA03M8087M is a 3.6-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 806- to	Original	RA03M8087M 806-870MHz RA03M8087M 870-MHz RA03M8087M-01	PDF
RA03M8087M Abstract: RA03M8087M-101 transistor marking zg Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA03M8087M RoHS Compliance , 806-870MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA03M8087M is a 3.6-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 806 to	Original	RA03M8087M 806-870MHz RA03M8087M 870-MHz RA03M8087M-101 transistor marking zg	PDF
RA60H1317M1 Abstract: RA30H1317M RA35H1516M RA07H4047M RA03M8087M RA07H3340M RA07H4452M RA13H1317M RA13H3340M RA13H4047M Text: APPLICATION NOTE Silicon RF Power Semiconductors Document No. AN-GEN-026-H Date : 18th Apr. 2003 Rev. date : 22th.Jun. 2010 Prepared : S.Kametani, Y.Tanaka Confirmed : T. Okawa Taking Charge of Silicon RF by Miyoshi Electronics SUBJECT: ELECTRO STATIC SENSITIVITY FOR	Original	AN-GEN-026-H RA30H4452M 440-520MHz, 200pF, RA60H1317M1 RA30H1317M RA35H1516M RA07H4047M RA03M8087M RA07H3340M RA07H4452M RA13H1317M RA13H3340M RA13H4047M	PDF
RD100HHF1 Abstract: RD70HVF1 rd16hhf1 RD15HVF1 RD06HVF1 RD16HHF1 application notes RD70HVF RD70HHF1 RD01MUS2 RD06HHF1 Text: SiRF Device Family for RF Power Amplification General Catalog Better Performance For Radio Communication Network Professional Mobile Radio Marine Radio Telematics AMPS/GSM Features Full Line up Frequency : 30-900MHz Output Power : 0.3-100W Operation Voltage : 7.2-12.5V	Original	30-900MHz H-CR624-E KI-0612 RD100HHF1 RD70HVF1 rd16hhf1 RD15HVF1 RD06HVF1 RD16HHF1 application notes RD70HVF RD70HHF1 RD01MUS2 RD06HHF1	PDF
RA60H1317M1 Abstract: C100pF 4500 MOS RA13H3340M mitsubishi rf power module RA30H1317M RA07H4047M RA35H1516M RA07H3340M RA07H4452M Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document No. AN-GEN-026-G Date : 18th Apr. 2003 Rev. date : 7th Jan. 2010 Prepared : S.Kametani, Y.Tanaka Confirmed : T. Okawa Taking Charge of Silicon RF by Miyoshi Electronics SUBJECT: ELECTRO STATIC SENSITIVITY FOR	Original	AN-GEN-026-G RA30H4452M 440-520MHz, 200pF, RA60H1317M1 C100pF 4500 MOS RA13H3340M mitsubishi rf power module RA30H1317M RA07H4047M RA35H1516M RA07H3340M RA07H4452M	PDF
RM15TB-H Abstract: RM10TB-H RA45H8087M rd00hhf1 rm30tn-h RM10TB RM250HB-10F ps11023-a PS11023 mitsubishi PS11023-A Text: MITSUBISHI СИЛОВЫЕ ПРИБОРЫ Применение: — силовые приводы электродвигателей постоянного и переменного тока; — преобразователи электроэнергии и электрогенераторы;	Original	CM400HA CM600HA CM600HB CM100DY CM150DY CM200DY CM300DY CM400DY CM600DY RM15TB-H RM10TB-H RA45H8087M rd00hhf1 rm30tn-h RM10TB RM250HB-10F ps11023-a PS11023 mitsubishi PS11023-A	PDF
RA60H1317M1 Abstract: FET 4900 mitsubishi rf "RF Power Modules" 175mhz 12.5v 40w RA30H1317M RA13H1317M RA03M8087M RA30H4452M RA35H1516M Text: MITSUBISHI RF POWER SEMICONDUCTORS APPLICATION NOTE Document NO. AN-GEN-026-E Date : 18th April 2003 Rev. date : 15th March ‘05 Prepared : K. Kajiwara Confirmed : T. Okawa SUBJECT: ELECTRO STATIC SENSITIVITY FOR MITSUBISHI RF POWER MODULE RA* series	Original	AN-GEN-026-E AN-GEN-026-E RA30H4452M 440-520MHz, 200pF, RA60H1317M1 FET 4900 mitsubishi rf "RF Power Modules" 175mhz 12.5v 40w RA30H1317M RA13H1317M RA03M8087M RA30H4452M RA35H1516M	PDF
RA03M8087M Abstract: No abstract text available Text: ATTENTION MITSUBISHI RF POWER MODULE OBSERVE PRECAUTIONS FOR HANDLING RA03M8087M ELETROSTATIC SENSITIVE DEVICES Silicon MOS FET Power Amplifier, 806-870MHz 3.6W PORTABLE RADIO MAXIMUM RATINGS Tc=25deg.C UNLESS OTHERWISE NOTED SYMBOL PARAMETER CONDITIONS	OCR Scan	RA03M8087M 806-870MHz 25deg 50ohm ZI-50ohm 806-870MHz1Zg 50ohm, RA03M8087M	PDF