ibm 9910 140
Abstract: MONITOR IBM E54 ups 9910 140 Cisco 2621 router 72H9991 ibm 9406 ibm 6331 IBM Infoprint 2210 ibm a21m ibm monitor e74
Text: IBM ServicePac SELECTION GUIDE Swedish Edition ServicePacs are only valid for those countries where the service has been announced. Currently this includes most Western European countries but excludes all Eastern European countries. For the UK, cover is restricted to UK mainland
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ZS96-0137.
ZS99-0203
14J1278
14J1279
Page32
ibm 9910 140
MONITOR IBM E54
ups 9910 140
Cisco 2621 router
72H9991
ibm 9406
ibm 6331
IBM Infoprint 2210
ibm a21m
ibm monitor e74
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8264 RAM
Abstract: Intel 8245 PPC 755 intel d 8264 MPC74XX MPC8250 MPC8280 MPC82XX MPC852 MPC866
Text: Embedded Systems Development Tools From Metrowerks Development Studio Version 8 PowerPC ISA Edition for Comm Processors Processors Supported: Overview Metrowerks’ CodeWarrior Development Studio, PPC ISA Edition for Comm. Processors is a complete integrated development environment for PPC ISA hardware bring-up through embedded applications. By combining state-of-the-art
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MPC85X
MPC86X
MPC74XX
MPC82XX
D-81829
8264 RAM
Intel 8245
PPC 755
intel d 8264
MPC74XX
MPC8250
MPC8280
MPC82XX
MPC852
MPC866
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BPW85C
Abstract: 416 npn phototransistor 8277 bpw 104 BPW85 BPW85A BPW85B Silicon NPN Phototransistor
Text: BPW85A, BPW85B, BPW85C Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : Ø 3 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation
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BPW85A,
BPW85B,
BPW85C
2002/95/EC
2002/96/EC
BPW85
18-Jul-08
BPW85C
416 npn phototransistor
8277
bpw 104
BPW85A
BPW85B
Silicon NPN Phototransistor
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Untitled
Abstract: No abstract text available
Text: BPW85 Vishay Semiconductors Silicon NPN Phototransistor Description BPW85 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a T-1 Ø 3 mm clear, plastic package. It is sensitive for visible and near infrared radiation. 20815
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BPW85
BPW85
2002/95/EC
2002/96/EC
BPW85A
BPW85B
BPW85C
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E67349
Abstract: TLP597G VDE0884
Text: TLP597G TOSHIBA Photocoupler Photo Relay TLP597G Cordless Telephone PBX Modem Unit in mm The TOSHIBA TLP597G consists of a gallium arsenide infrared emitting diode optically coupled to a photo−MOS FET in a six lead plastic DIP package DIP6 . The TLP597G is a bi−directional switch which can replace mechanical
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TLP597G
TLP597G
120mA
2500Vrms
UL1577,
E67349
EN60065:
EN609osing
E67349
VDE0884
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10C4
Abstract: TLP227G TLP227G-2 VDE0884 Photocoupler TUV
Text: TLP227G,TLP227G−2 TOSHIBA Photocoupler Photo Relay TLP227G,TLP227G−2 Cordless Telephone PBX Modem Unit in mm The TOSHIBA TLP227G series consist of a gallium arsenide infrared emitting diode optically coupled to a photo−MOS FET in a plastic DIP package.
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TLP227G
TLP227G-2
TLP227G:
TLP227G-2:
120mA
2500Vrms
10C4
TLP227G-2
VDE0884
Photocoupler TUV
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11-5B2
Abstract: E67349 EN60747-5-2 TLP227G TLP227G-2
Text: TLP227G N ,TLP227G-2(N) 東芝フォトカプラ フォトリレー TLP227G(N),TLP227G-2(N) ○ 電子交換機 ○ 多機能電話機 ○ 各種モデム ○ 計測装置 単位: mm TLP227G TLP227G シリーズはフォト MOS FET と赤外発光ダイオードを光結合さ
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TLP227G
TLP227G-2
TLP227G
TLP227G,
TLP227G-2
11-5B2
E67349
EN60747-5-2
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Untitled
Abstract: No abstract text available
Text: BPW85 Vishay Semiconductors Silicon NPN Phototransistor Description BPW85 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a T-1 Ø 3 mm clear, plastic package. It is sensitive for visible and near infrared radiation. 20815
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BPW85
BPW85
2002/95/EC
2002/96/EC
BPW85A
BPW85B
BPW85C
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BPW85
Abstract: BPW85A BPW85B BPW85C
Text: BPW85 Vishay Semiconductors Silicon NPN Phototransistor Description BPW85 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1 ∅ 3 mm plastic package. Due to its waterclear epoxy the device is sensitive to visible and near infrared radiation.
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BPW85
BPW85
2002/95/EC
2002/96/ECed
08-Apr-05
BPW85A
BPW85B
BPW85C
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BPW85
Abstract: BPW85A BPW85B BPW85C Phototransistor bpw 80
Text: BPW85A, BPW85B, BPW85C Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : Ø 3 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation
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BPW85A,
BPW85B,
BPW85C
2002/95/EC
2002/96/EC
BPW85
11-Mar-11
BPW85A
BPW85B
BPW85C
Phototransistor bpw 80
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bpw 104
Abstract: bpw 50 BPW85 BPW85A BPW85B BPW85C
Text: BPW85 Vishay Semiconductors Silicon NPN Phototransistor Description BPW85 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1 ∅ 3 mm plastic package. Due to its waterclear epoxy the device is sensitive to visible and near
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BPW85
BPW85
2002/95/EC
2002/96/EC
08-Apr-05
bpw 104
bpw 50
BPW85A
BPW85B
BPW85C
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Untitled
Abstract: No abstract text available
Text: BPW85, BPW85A, BPW85B, BPW85C www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : Ø 3 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation
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BPW85,
BPW85A,
BPW85B,
BPW85C
BPW85
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: BPW85A, BPW85B, BPW85C www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : Ø 3 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation
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BPW85A,
BPW85B,
BPW85C
2002/95/EC
2002/96/EC
BPW85
2002/95/EC.
2011/65/EU.
JS709A
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bpw85c
Abstract: No abstract text available
Text: BPW85A, BPW85B, BPW85C www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : Ø 3 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation
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BPW85A,
BPW85B,
BPW85C
2002/95/EC
2002/96/EC
BPW85
2011/65/EU
2002/95/EC.
2011/65/EU.
bpw85c
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8275 crt controller intel
Abstract: Intel 8275 block diagram of Intel 8275 8275 crt controller intel 8245 crt Intel 8245 ic 8275 intel d 8275 Intel 8275 Block diagram 8275
Text: in te i 8275 PROGRAMMABLE CRT CONTROLLER et m Programmable Screen and Character Format • Fully MCS-80 Compatible 6 Independent Visual Field Attributes ■ Dual Row Buffers 1 11 Visual Character Attributes and MCS-85 ■ Programmable DMA Burst Mode Graphic Capability
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MCS-80
MCS-85
40-Pln
AFN-00224B
AFN-00224B
8275 crt controller intel
Intel 8275
block diagram of Intel 8275
8275 crt controller
intel 8245 crt
Intel 8245
ic 8275
intel d 8275
Intel 8275 Block diagram
8275
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Z80 FIO
Abstract: z80 cio Z80 RAM 251801 Z80 programmer Z80 application note Z280 DC-2481-01 Z8671 IN SDLC PROTOCOL
Text: <£ZiIfi3G LITERATURE GUIDE Z8 /SUPER8 MICROCONTROLLER FAMILY Handbook Part No Z8 Design Handbook includes the following documents DC-8275-03 Z8 NMOS MCU Microcontroller Z8600 Z8 MCU 2K 28-Pin Product Specification Z8601/03/11/13 Z8 MCU 2K/4K Prod. Specification and Protopak
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Z8600
28-Pin
Z8601/03/11/13
Z8671
Z8681/82
Z8691
Z86C08
18-Pin
Z86C00/C10/C20
Z80 FIO
z80 cio
Z80 RAM
251801
Z80 programmer
Z80 application note
Z280
DC-2481-01
IN SDLC PROTOCOL
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11-5B2
Abstract: TLP227G TLP227G-2
Text: TOSHIBA TLP227G,TLP227G-2 TOSHIBA PHOTOCOUPLER CORDLESS TELEPHONE PBX PHOTO RELAY TLP227G, TLP227G-2 Unit in mm "n n3 MODEM The TOSHIBA TLP227G series consist of a gallium arsenide infrared emitting diode optically coupled to a photo-MOS FET in a plastic DIP package.
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TLP227G
TLP227G-2
TLP227G,
TLP227G
120mA
EN60065
11-5B2
TLP227G-2
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E67349
Abstract: TLP597G VDE0884
Text: TOSHIBA TLP597G TOSHIBA PHOTOCOUPLER CORDLESS TELEPHONE PHOTO RELAY TLP597G PBX MODEM The TOSHIBA TLP597G consists of a gallium arsenide infrared emitting diode optically coupled to a photo-MOS FET in a six lead plastic DIP package DIP6 . The TLP597G is a bi-directional switch which can replace mechanical
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TLP597G
TLP597G
EN60065
EN60950
UL1577,
E67349
E67349
VDE0884
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TLP597G TOSHIBA PHOTOCOUPLER PHOTO RELAY TLP597G Unit in mm CORDLESS TELEPHONE PBX MODEM Ti6 The TOSHIBA TLP597G consists of a gallium arsenide infrared emitting diode optically coupled to a photo-MOS FET in a six lead plastic DIP package DIP6 . The TLP597G is a bi-directional switch which can replace mechanical
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TLP597G
TLP597G
UL1577,
E67349
EN60065
EN60950
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TLP227G,TLP227G-2 T O SH IB A PHO TOCO UPLER PHOTO RELAY TLP227G, TLP227G-2 CORDLESS TELEPHONE PBX MODEM The TOSHIBA TLP227G series consist of a gallium arsenide infrared emitting diode optically coupled to a photo-MOS FET in a plastic DIP package.
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TLP227G
TLP227G-2
TLP227G,
TLP227G
EN60065
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E67349
Abstract: TLP597G
Text: TO SH IBA TLP597G TOSHIBA PHOTOCOUPLER CORDLESS TELEPHONE PHOTO RELAY T LP 5 9 7 G PBX MODEM The TOSHIBA TLP597G consists of a gallium arsenide infrared emitting diode optically coupled to a photo-MOS FET in a six lead plastic DIP package DIP6 . The TLP597G is a bi-directional switch which can replace mechanical
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TLP597G
TLP597G
EN60065
EN60950
UL1577,
E67349
E67349
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TLP597G TOSHIBA PHOTOCOUPLER PHOTO RELAY TLP597G Unit in mm CORDLESS TELEPHONE PBX MODEM The TOSHIBA TLP597G consists of a gallium arsenide infrared emitting diode optically coupled to a photo-MOS FET in a six lead plastic DIP package DIP6 . The TLP597G is a bi-directional switch which can replace mechanical
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TLP597G
TLP597G
UL1577,
E67349
EN60065
EN60950
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11-5B2
Abstract: TLP227G TLP227G-2
Text: TLP227GJLP227G-2 TO SH IBA TOSHIBA PHOTOCOUPLER CORDLESS TELEPHONE PBX PHOTO RELAY TLP227G, TLP227G-2 Unit in mm 4 TLP227G 3 MODEM The TOSHIBA TLP227G series consist of a gallium arsenide infrared emitting diode optically coupled to a photo-MOS FET in a plastic
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TLP227G
TLP227G-2
TLP227G,
TLP227G
120mA
EN60065
11-5B2
TLP227G-2
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Untitled
Abstract: No abstract text available
Text: T O SH IB A T LP 2 2 7 G JL P 2 2 7 G -2 TOSHIBA PHOTOCOUPLER Tl • P777G a g PHOTO RELAY Tl ■ CORDLESS TELEPHONE PBX a 'w Unit in mm Tl IT3, 4 MODEM The TOSHIBA TLP227G series consist of a gallium arsenide infrared emitting diode optically coupled to a photo-MOS FET in a plastic
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P777G
TLP227G
TLP227G
TLP227G-2
120mA
TLP227GJLP227G-2
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