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    824 ZENER Search Results

    824 ZENER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    824 ZENER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BTS 824 E

    Abstract: BTS 824 a diode zener ZL 27 siemens functional profet siemens functional description profet 824 mosfet 824 10 pins siemens Requirements for Power MOSFET connected in parallel diode 824
    Text: Target Datasheet BTS 824 Smart High-Side Power Switch Four Channels: 4 x 90mΩ Status Feedback Product Summary Operating Voltage Vbb on Active channels On-state Resistance RON Nominal load current IL(ISO) Current limitation IL(SCr) Package P-DSO-20-10 (Power SO 20)


    Original     		PDF P-DSO-20-10 1999-Sep-01 BTS 824 E BTS 824 a diode zener ZL 27 siemens functional profet siemens functional description profet 824 mosfet 824 10 pins siemens Requirements for Power MOSFET connected in parallel diode 824

    TH3L10

    Abstract: c 4235 transistor npn transistor c 4236 TH3L10 datasheet TH5P4 TH3L10 ic 883 transistor 2SC4310 tk3l10 2SA1795
    Text: HIGH VOLTAGE • HIGH SPEED SWITCHING TRANSISTORS HDT series ITO-220 Bipolar transistors NPN Absolute Maximum Ratings VCEO VEBO IC IB PT Tstg TJ VCEO (sus) (min) [V] [V] [V] [A] [A] [W] [˚C] [˚C] [V] 6 3 10 15 4 6 800 7 hFE (min) VCE (sat) (max) VBE (sat)


    Original     		PDF ITO-220 2SC4310 O-220 TH3L10 c 4235 transistor npn transistor c 4236 TH3L10 datasheet TH5P4 TH3L10 ic 883 transistor 2SC4310 tk3l10 2SA1795

    cable rs232 to idc 10 pin

    Abstract: AIM104-SER4C 386EX PC104 motherboard electronic circuit diagram idc 10 pin to RS232 CABLE ACE-CAB50 elan 104 5 pin 12V din wiring diagram ELAN-104
    Text: 2192-09728-000-000 J570 ACEpc BASEBOARD PN Number: PN ACEpc BASEBOARD Introduction The ACEpc baseboard is a platform for using Arcom processor boards together with AIM 104 I/O modules. ACEpc Baseboard key features are: • Field powered at 24VDC nominal • Terminal breakouts for up to 128 I/O lines


    Original     		PDF 24VDC 16bit PC/104 RS232 188EB, 386EX, SBC104, Elan-104 PC104 18watts cable rs232 to idc 10 pin AIM104-SER4C 386EX motherboard electronic circuit diagram idc 10 pin to RS232 CABLE ACE-CAB50 elan 104 5 pin 12V din wiring diagram

    Untitled

    Abstract: No abstract text available
    Text: ASL19W 5-3000 MHz High Linearity LNA MMIC Features Description •20 dB Gain at 900 MHz The ASL19W, a wideband linear low noise amplifier ·22 dBm P1dB at 900 MHz MMIC, has a low noise and high linearity at low bias current, being suitable for use in both receiver and


    Original     		PDF ASL19W ASL19W, OT-89

    Vitramon

    Abstract: nickel magnetic properties 45128 vitramon CAPACITOR VJ0402 VJ0603 VJ0805 VJ1206 VJ1210 VJ1808
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . V ishay V itra mon – Non - Magnetic Se r ie s capacitors multilayer ceramic chip capacitors p r o d uc t o v e r v i e w w w w. v i s h a y. c o m DISCLAIMER All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf collectively, “Vishay” , disclaim


    Original     		PDF maximu65-6788-6668 VMN-PL0441-1003 Vitramon nickel magnetic properties 45128 vitramon CAPACITOR VJ0402 VJ0603 VJ0805 VJ1206 VJ1210 VJ1808

    Untitled

    Abstract: No abstract text available
    Text: ASL19C 5 ~ 3000 MHz High Linearity LNA MMIC Features Description 13.0 dB Gain at 2000 MHz 21.5 dBm P1dB at 2000 MHz 37.5 dBm Output IP3 at 2000 MHz 0.9 dB NF at 2000 MHz MTTF > 100 Years Single Supply The ASL19C, a wideband linear low noise amplifier


    Original     		PDF ASL19C ASL19C,

    c639

    Abstract: No abstract text available
    Text: ASX620 150 ~ 3000 MHz MMIC Amplifier Features Description  29.5 dB Gain at 900 MHz  33 dBm P1dB at 900 MHz  48 dBm Output IP3 at 900 MHz  MTTF > 100 Years  Two Power Supplies The ASX620, a power amplifier MMIC, has a high linearity, high gain, and high efficiency over a wide


    Original     		PDF ASX620 ASX620, c639

    Zener C215

    Abstract: No abstract text available
    Text: ASX520 250 ~ 3000 MHz MMIC Amplifier Description Features  31 dB Gain at 900 MHz  33 dBm P1dB at 900 MHz  48 dBm Output IP3 at 900 MHz  MTTF > 100 Years  Two Power Supplies The ASX520, a power amplifier MMIC, has a high linearity, high gain, and high efficiency over a wide


    Original     		PDF ASX520 ASX520, 100pF Zener C215

    Zener C212

    Abstract: diode zener c71 zener ma 1150
    Text: ASX621 250 ~ 3000 MHz MMIC Amplifier Description Features  18 dB Gain at 2000 MHz  32.5 dBm P1dB at 2000 MHz  49 dBm Output IP3 at 2000 MHz  MTTF > 100 Years  Two Power Supplies The ASX621, a power amplifier MMIC, has a high linearity, high gain, and high efficiency over a wide


    Original     		PDF ASX621 ASX621, Zener C212 diode zener c71 zener ma 1150

    lidar ACC

    Abstract: airbag
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . capacitors VJ.31 / VJ.34 • Automotive Applications • Product Range • AEC-Q200 Testing • Part Numbering w w w. v i s h a y. c o m instructional G uide Vishay Vitramon Automotive MLCC s Surface-Mount Multilayer


    Original     		PDF AEC-Q200 AEC-Q-200 VMN-SG2142-0808 lidar ACC airbag

    Untitled

    Abstract: No abstract text available
    Text: ASX420 250 ~ 3500 MHz MMIC Amplifier Description Features  31.5 dB Gain at 900 MHz  29.5 dBm P1dB at 900 MHz  47 dBm Output IP3 at 900 MHz  6.8 dB NF at 900 MHz  MTTF > 100 Years  Two Power Supplies The ASX420, a power amplifier MMIC, has a high


    Original     		PDF ASX420 ASX420, 100pF

    DB8982PW

    Abstract: DB8982 DB8983PW B8985 Decibel db898 Decibel Products uhf
    Text: DB8982PW. DB8983PW TOWER TOP Rx AMPLIFIERS DB8985PW 406-470 MHz with 806-824 MHz Decibel’s tower top receiver amplifiers improve the sensitivity of base station receivers and extend the “talk back” range from low powered transmitters operating in the 406-470 and 806-824 MHz.


    OCR Scan     		PDF DB8982PW. DB8983PW DB8985PW rejecti6-470, B8985PW DB8982PW DB8982 B8985 Decibel db898 Decibel Products uhf

    DB8990-21A

    Abstract: Coax signal Splitter schematic DB8990-21AR multicoupler AM 22A
    Text: ah DB8990-21A, DB8990-22Ä TOWER TOP Rx RECEIVE SYSTEMS DB8990-21AR 806-824 MHz Decibel’s tower top receivers improve the sensitivity of base station receivers and extend the “talk back ’ range for low powered transmitters operating in the 806-824 MHz bands.


    OCR Scan     		PDF DB8990-21A, DB8990-22Ä DB8990-21AR DB8925-24B 24-way DB8925-248 DB8990-21A Coax signal Splitter schematic multicoupler AM 22A

    Untitled

    Abstract: No abstract text available
    Text: MPS-0808A9-85 up?* 824 to 849 M H z Low Noise Receiver Amplifier Features • Very Low Noise 1.1 dB Typical • High +36 dBm Typical IP3 • 16 dB Typical Gain • 4 0 Voit Bias • 26% High Power Added Efficiency Outline Diagram Description The M PS-0808A 9-85 is a low noise high dynam ic


    OCR Scan     		PDF MPS-0808A9-85 PS-0808A 100pF

    1N821-1N829

    Abstract: 250ca 1N SERIES DIODE zener diode 1n 1NS21 zener 7.5 B 48 Zener Diodes series 1N
    Text: AM ER I C A N PO WE R D E V I C E S S'JE » • 07373.3S O O O D G S b 777 * A P » T V / - 1N821-1N829 1N821A-1N829A americani S E M IC O N D U C T O R S power devices, inc. 500 mW temperature compensated zener reference diodes MECHANICAL CHARACTERISTICS


    OCR Scan     		PDF 1N821-1N829 1N821A-1N829A 500mW 1NS21 1N821A 250ca 1N SERIES DIODE zener diode 1n zener 7.5 B 48 Zener Diodes series 1N

    TH653

    Abstract: No abstract text available
    Text: Darlington Transistors Darlington Pow er T ra n s is to rs T0-220 bipolar transistors Type No. Electrical Characteristics Absolute Maximum Ratings Vcbo E IA J VCEO V ebo [V ] 2SD1022 100 100 1023 200 200 1024 100 100 1025 200 200 1026 100 100 200 200 500 400


    OCR Scan     		PDF T0-220 2SD1022 2SB1282 TH653

    N821

    Abstract: 1n zener N821A
    Text: 1N 821, A , -1 thru 1 N 829, A , -1 DO-35 6.2 & 6.55 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES FEATURES • ZENER VOLTAGE 6.2 V AND 6.55 V • 1N821. 823, 825, 827 AND 829 HAVE JAN . JA N T X , JANTXV-1 QUALIFICATIONS TO M IL-S-19500/159 • JAN S EQUIVALENT AVAILABLE VIA SCD


    OCR Scan     		PDF DO-35 1N821. IL-S-19500/159 N821 1n zener N821A

    Z808

    Abstract: Z226 ANA 608 MZ210 1N5105 marking 1n diode MZ80 845MZ Zener 224 Z860
    Text: 1N 5063 - 1N5117 M Z 806 - M Z 890, MZ 210 • MZ 2 4 0 Mierosem i Corp. diode experts SANTA ANA, CA SCOTTSDALE, A Z / For m ore inform ation call: 714 979-8220 3-WATT G USS ZENER DIODES FE A TU R E S • • • • • • • Microminiature package.


    OCR Scan     		PDF 1N5117 P-16J MZ806 MZ211 MZ111) 1N5117, Z808 Z226 ANA 608 MZ210 1N5105 marking 1n diode MZ80 845MZ Zener 224 Z860

    IN827 Temperature Compensated Zener

    Abstract: IN822 zener diode IN 825 1N827 JANTX in825 IN829 in824 1N821 1N821A 1N822
    Text: 1N821, A, -1 thru 1N829, A, -1 DO-35 Micro/semi Corp. The diode experts SCOTTSDALE, A Z F o r m o re in fo rm a tio n call: 6 0 2 9 4 1 -6 3 0 0 ? 7 r r r \ ' FEATURES 6.2 & 6.55 VOLT TEM PERATURE CO M PEN SATED Z E N E R R EF ER EN C E D IO DES • ZENER VOLTAGE 6.2 V AND 6.55 V


    OCR Scan     		PDF 1N821, 1N829, DO-35 1N821 MIL-S-19500/159 IN827 Temperature Compensated Zener IN822 zener diode IN 825 1N827 JANTX in825 IN829 in824 1N821A 1N822

    gaa 816

    Abstract: No abstract text available
    Text: M Z 5 8 0 6 thru M Z5891 and M Z5210 thru M Z5240 MicrosemiCorp. ' The choóe e x p e lís SANTA ANA, CA For more information call: 714 979-8220 FEATURES GLASS ZENER DIODES • MICROMINIATURE PACKAGE • VOIDLESS HERMETICALLY SEALED GLASS PACKAGE • TRIPLE LAYER PASSIVATION


    OCR Scan     		PDF Z5891 Z5210 Z5240 MZ5806 MZ5891, MZ5210 MZ5240 gaa 816

    710L1

    Abstract: BTS 824 R marking code A19A 711-L1 712-N1
    Text: SIEM ENS PROFET BTS 710 L1 Smart Four Channel Highside Power Switch Features • Overload protection • Current limitation • Short-circuit protection • Thermal shutdown • Overvoltage protection including load dump • Reverse battery protection1)


    OCR Scan     		PDF

    9.1 b2

    Abstract: 1.2KE70
    Text: 1.2KE5 thru 1.2KE170A Microsemi Corp. ’ The Oioée experts SANTA ANA, CA SCOTTSDALE, A Z For more information call: 602 941-6300 FEATURES • AVAILABLE IN RANGES FROM 5.0 TO 170 VOLTS TRANSIENT ABSORPTION ZENER • AVAILABLE IN BIDIRECTIONAL FOR AC APPLICATIONS


    OCR Scan     		PDF 2KE170A 10/jse 1000jusec. 2KE170. 9.1 b2 1.2KE70

    B23 zener diode

    Abstract: zener Diode B23 BTS710 BTS710L1 BTS711L1 710L1
    Text: • fi23SbGS 00^3103 SIEMENS TIR ■ PROFET BTS 710 L1 Smart Four Channel Highside Power Switch Product Summary Features • • • • • • • • • • • • Overload protection Current limitation Short-circuit protection Thermal shutdown Overvoltage protection


    OCR Scan     		PDF fi23SbGS BTS710L1 A23SbDS P-DSO-20-9 BTS710L1 Q67060-S70Q4-A2 TS710L1 fl235fcj05 B23 zener diode zener Diode B23 BTS710 BTS711L1 710L1

    Untitled

    Abstract: No abstract text available
    Text: RF Power Modules INDEX SELECTION GUIDE GENERAL CONTENTS Page 5 8 12 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.


    OCR Scan     		PDF C4382.