Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    45128 Search Results

    45128 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    845-12.8-1SC7I8 Renesas Electronics Corporation 25.4 x 22.1mm, Oven-Controlled, HCMOS, SMD, Oscillator (OCXO) Visit Renesas Electronics Corporation
    845-12.8-1SC7I Renesas Electronics Corporation 25.4 x 22.1mm, Oven-Controlled, HCMOS, SMD, Oscillator (OCXO) Visit Renesas Electronics Corporation
    SF Impression Pixel

    45128 Price and Stock

    HARTING Technology Group 09454512800

    HARTING T1 INDUSTRIAL EVALUATION
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 09454512800 Bulk 15 1
    • 1 $28.61
    • 10 $21.003
    • 100 $16.1688
    • 1000 $13.84496
    • 10000 $13.84496
    Buy Now

    Phoenix Contact 5451284

    TERM BLOCK PLUG 11POS 5.08MM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 5451284 Bulk
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now
    Sager 5451284
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now

    EDAC Inc 345-128-521-508

    CONN EDGE DUAL FML 128POS 0.100
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 345-128-521-508 Box 25
    • 1 -
    • 10 -
    • 100 $17.5444
    • 1000 $17.5444
    • 10000 $17.5444
    Buy Now
    Newark 345-128-521-508 Bulk 25
    • 1 $19.6
    • 10 $19.6
    • 100 $12.82
    • 1000 $7.55
    • 10000 $7.55
    Buy Now

    EDAC Inc 345-128-521-878

    CONN EDGE DUAL FML 128POS 0.100
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 345-128-521-878 Box 25
    • 1 -
    • 10 -
    • 100 $18.3584
    • 1000 $18.3584
    • 10000 $18.3584
    Buy Now
    Newark 345-128-521-878 Bulk 25
    • 1 $20.51
    • 10 $20.51
    • 100 $13.43
    • 1000 $8.08
    • 10000 $8.08
    Buy Now

    EDAC Inc 345-128-523-812

    CONN EDGE DUAL FML 128POS 0.100
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 345-128-523-812 Box 25
    • 1 -
    • 10 -
    • 100 $16.682
    • 1000 $16.682
    • 10000 $16.682
    Buy Now
    Newark 345-128-523-812 Bulk 25
    • 1 $18.63
    • 10 $18.63
    • 100 $11.82
    • 1000 $7.07
    • 10000 $7.07
    Buy Now

    45128 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    4-5-1280 3M Electronics Markets Materials Tape, Tapes, Adhesives, TAPE CIRCUIT PLATING 4"X5YD Original PDF

    45128 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PD45128441

    Abstract: uPD45128441G5-A10T-9JF uPD45128441G5-A75T-9JF uPD45128441G5-A80T-9JF PD45128441-T uPD45128841G5-A10T-9JF uPD45128841G5-A75T-9JF uPD45128841G5-A80T-9JF uPD45128841G5-A80LT-9JF
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µ45128441-T, 45128841-T 128M-bit Synchronous DRAM 4-bank, LVTTL WTR Wide Temperature Range Description The µ45128441, 45128841 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 x 4 × 4, 4,194,304 × 8 × 4 (word × bit × bank), respectively.


    Original
    PDF PD45128441-T, 45128841-T 128M-bit PD45128441, 728-bit 54-pin M01E0107 PD45128441 uPD45128441G5-A10T-9JF uPD45128441G5-A75T-9JF uPD45128441G5-A80T-9JF PD45128441-T uPD45128841G5-A10T-9JF uPD45128841G5-A75T-9JF uPD45128841G5-A80T-9JF uPD45128841G5-A80LT-9JF

    M12650EJ5V0DS00

    Abstract: PD45128163G5-A10-9JF PD45128163G5-A80-9JF PD45128441 PD45128441G5-A10-9JF uPD45128441G5-A10B-9JF PD45128441G5-A80-9JF PD45128841G5-A10-9JF uPD45128841G5-A10B-9JF PD45128841G5-A80-9JF
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ45128441, 45128841, 45128163 128M-bit Synchronous DRAM 4-bank, LVTTL Description The µ45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 x 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 word × bit × bank , respectively.


    Original
    PDF PD45128441, 128M-bit 728-bit 54-pin M12650EJ5V0DS00 PD45128163G5-A10-9JF PD45128163G5-A80-9JF PD45128441 PD45128441G5-A10-9JF uPD45128441G5-A10B-9JF PD45128441G5-A80-9JF PD45128841G5-A10-9JF uPD45128841G5-A10B-9JF PD45128841G5-A80-9JF

    PD45128441

    Abstract: PD45128441G5-A10-9JF PD45128441G5-A75-9JF uPD45128441G5-A75A-9JF PD45128441G5-A80-9JF PD45128841G5-A10-9JF PD45128841G5-A75-9JF uPD45128841G5-A75A-9JF PD45128841G5-A80-9JF
    Text: DATA SHEET MOS INTEGRATED CIRCUIT 45128441, 45128841 128M-bit Synchronous DRAM 4-bank, LVTTL Description EO The μ45128441, 45128841 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 x 4 × 4, 4,194,304 × 8 × 4 word × bit × bank , respectively.


    Original
    PDF PD45128441, 128M-bit 728-bit 54-pin PD45128441 PD45128441G5-A10-9JF PD45128441G5-A75-9JF uPD45128441G5-A75A-9JF PD45128441G5-A80-9JF PD45128841G5-A10-9JF PD45128841G5-A75-9JF uPD45128841G5-A75A-9JF PD45128841G5-A80-9JF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µ45128441, 45128841, 45128163 128M-bit Synchronous DRAM 4-bank, LVTTL Description The µ45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 x 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 word × bit × bank , respectively.


    Original
    PDF PD45128441, 128M-bit 728-bit 54-pin

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ45128441,45128841,45128163 128 M-bit Synchronous DRAM 4-bank, LVTTL Description The µ45128441, 45128841, 45128163 are high-speed 134,217,728 bit synchronous dynamic random-access memories, organized as 8,388,608x4x4, 4,194,304x8x4, 2,097,152x16x4 word x bit x bank , respectively.


    Original
    PDF PD45128441 PD45128441, 608x4x4, 304x8x4, 152x16x4 54-pin

    Untitled

    Abstract: No abstract text available
    Text: Characteristics and dimensions of terminals Part number Specification Material Surface / Colour Form Single part Packing unit / piece Section area mm2 DIN Nominal size Material thickness (mm) a1 h l1 45128.112.178 Terminal ends CuZn frSn 2 Single form X


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µ45128441-T, 45128841-T, 45128163-T 128M-bit Synchronous DRAM 4-bank, LVTTL WTR Wide Temperature Range Description The µ45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access


    Original
    PDF PD45128441-T, 45128841-T, 45128163-T 128M-bit PD45128441, 728-bit 54-pin M01E0107

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µ45128441-T, 45128841-T, 45128163-T 128M-bit Synchronous DRAM 4-bank, LVTTL WTR Wide Temperature Range Description The µ45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access


    Original
    PDF PD45128441-T, 45128841-T, 45128163-T 128M-bit PD45128441, 728-bit 54-pin M01E0107

    PD45128441

    Abstract: uPD45128441G5-A10I-9JF uPD45128441G5-A75I-9JF uPD45128441G5-A80I-9JF PD45128441-I uPD45128841G5-A10I-9JF uPD45128841G5-A75I-9JF uPD45128841G5-A80I-9JF
    Text: DATA SHEET MOS INTEGRATED CIRCUIT 45128441-I, 45128841-I 128M-bit Synchronous DRAM 4-bank, LVTTL WTR Wide Temperature Range Description EO The μ45128441, 45128841 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 x 4 × 4, 4,194,304 × 8 × 4 (word × bit × bank), respectively.


    Original
    PDF PD45128441-I, 45128841-I 128M-bit PD45128441, 728-bit 54-pin PD45128441 uPD45128441G5-A10I-9JF uPD45128441G5-A75I-9JF uPD45128441G5-A80I-9JF PD45128441-I uPD45128841G5-A10I-9JF uPD45128841G5-A75I-9JF uPD45128841G5-A80I-9JF

    uPD45128841G5-A10B-9JF

    Abstract: PD45128841G5-A75-9JF PD45128841G5-A80-9JF PD45128441 PD45128441G5-A10-9JF uPD45128441G5-A10B-9JF PD45128441G5-A75-9JF PD45128441G5-A80-9JF PD45128841G5-A10-9JF
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µ45128441, 45128841, 45128163 128M-bit Synchronous DRAM 4-bank, LVTTL Description The µ45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 x 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 word × bit × bank , respectively.


    Original
    PDF PD45128441, 128M-bit 728-bit 54-pin uPD45128841G5-A10B-9JF PD45128841G5-A75-9JF PD45128841G5-A80-9JF PD45128441 PD45128441G5-A10-9JF uPD45128441G5-A10B-9JF PD45128441G5-A75-9JF PD45128441G5-A80-9JF PD45128841G5-A10-9JF

    bcm4401kql

    Abstract: foxconn marvell 88SA8040 la-2151 88SA8040 DELL power supply diagram h240as-00 compal LPC47N354 sst39vf080-70-4c-ei max1987
    Text: A B C D E COMPAL CONFIDENTIAL 1 MODEL NAME : TOBAGO COMPAL P/N : 45128331001/45128331002 PCB NO : LA2151 Revision : 0.4 DELL: X03 1 TOBAGO Schematics Document 2 2 uFCBGA/uFCPGA Mobile Dothan Intel Alviso + ICH6M 2004-06-15 REV : 0.4 (DELL: X03) 3 3 4 4 DELL CONFIDENTIAL/PROPRIETARY


    Original
    PDF LA2151 PR197 PR212 OBAGO-LA2151 bcm4401kql foxconn marvell 88SA8040 la-2151 88SA8040 DELL power supply diagram h240as-00 compal LPC47N354 sst39vf080-70-4c-ei max1987

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µ45128441, 45128841, 45128163 128M-bit Synchronous DRAM 4-bank, LVTTL Description The µ45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 x 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 word × bit × bank , respectively.


    Original
    PDF PD45128441, 128M-bit 728-bit 54-pin M01E0107

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µ45128441, 45128841, 45128163 128M-bit Synchronous DRAM 4-bank, LVTTL Description The µ45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 x 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 word × bit × bank , respectively.


    Original
    PDF PD45128441, 128M-bit 728-bit 54-pin

    PD45128441

    Abstract: uPD45128441G5-A10I-9JF uPD45128441G5-A75I-9JF uPD45128441G5-A80I-9JF PD45128441-I uPD45128841G5-A10I-9JF uPD45128841G5-A75I-9JF uPD45128841G5-A80I-9JF
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µ45128441-I, 45128841-I 128M-bit Synchronous DRAM 4-bank, LVTTL WTR Wide Temperature Range Description The µ45128441, 45128841 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 x 4 × 4, 4,194,304 × 8 × 4 (word × bit × bank), respectively.


    Original
    PDF PD45128441-I, 45128841-I 128M-bit PD45128441, 728-bit 54-pin M01E0107 E0345N10 PD45128441 uPD45128441G5-A10I-9JF uPD45128441G5-A75I-9JF uPD45128441G5-A80I-9JF PD45128441-I uPD45128841G5-A10I-9JF uPD45128841G5-A75I-9JF uPD45128841G5-A80I-9JF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ45128441-A75, 45128841-A75 128M-bit Synchronous DRAM, 133MHz 4-bank, LVTTL Description The µ45128441-A75, 45128841-A75 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 x 4 × 4 and 4,194,304 × 8 × 4 word × bit × bank , respectively.


    Original
    PDF PD45128441-A75, 45128841-A75 128M-bit 133MHz 45128841-A75 728-bit 54-pin

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT P D 4 5 1 2 8 4 4 1 - A 7 5 ,4 5 1 2 8 8 4 1 -A 7 5 , 4 5 1 2 8 1 6 3 -A 7 5 128M-bit Synchronous DRAM, 133MHz 4-bank, LVTTL Description The ,45128441-A75, 45128841-A75 and 45128163-A75 are high-speed 134,217,728-bit synchronous dynamic


    OCR Scan
    PDF 128M-bit 133MHz uPD45128441-A75 45128841-A75 45128163-A75 728-bit 54-pin M14378EJ1V0DS00 uPD45128xxx uPD45128xxxG5

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT /JPD4512 8 4 4 1 ,4 5 1 2 8 8 4 1 ,4 5 1 2 8 1 6 3 128M-bit Synchronous DRAM 4-bank, LVTTL Description The ^¡45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access


    OCR Scan
    PDF /JPD4512 128M-bit PD45128441, 728-bit 54-pin

    30A120

    Abstract: D45128 ATEN 1327
    Text: PRELIMINARY DATA SHEET N E C ^ MOS INTEGRATED CIRCUIT _ / /¿ P D 4 5 1 2 8 4 4 1 ,4 5 1 2 8 8 4 1 , 4 5 1 2 8 1 6 3 128 M-bit Synchronous DRAM 4-bank, LVTTL Description The /¿45128441, 45128841, 45128163 are high-speed 134,217,728 bit synchronous dynamic random-access


    OCR Scan
    PDF uPD45128441 uPD45128841 uPD45128163 608x4x4, 304x8x4, 152x16x4 54-pin 30A120 D45128 ATEN 1327

    TFK 839

    Abstract: TFK 609 TFK 834 AEG TFK TELEFUNKEN TFK 809 TFK 893 TFK 9730 tfk 944 TFK 505 am diode tfk 817
    Text: Tem ic Sales Offices TELEFUNKEN Semiconductors Addresses Europe Denmark Hungary THMIC Dansk c/o AFXi Dansk Aktieselskab Roskildevej 8-10 2620 Albcrtslund Tel: 45 42 64 85 22 Fax: 45 43 62 62 28 TEMIC TELEFUNKEN microelectronic GmbH Kruppstrasse 6 45128 Essen


    OCR Scan
    PDF

    Pioneer PA 0016

    Abstract: PA 0016 PIONEER 80241 tfk U 209 B 55 A 436 TFK U 3212 M STR W 6262 TFK 626 E 1024 AEG TFK TELEFUNKEN stel 320 SIE20
    Text: Tem ic Sales Offices Semiconductors Addresses Europe Denmark Italy Sweden TEMIC Dansk c/o AEG Industri A/S Roskildevej 8 -1 0 2620 Albenslund Tel: 45 42 6485 22 Fax: 45 43 6262 28 TEMIC TELEFUNKEN micro­ electronic GmbH Kruppstrasse 6 45128 Essen Tel: 49 201 24730 0


    OCR Scan
    PDF Ol-Jul-96 Pioneer PA 0016 PA 0016 PIONEER 80241 tfk U 209 B 55 A 436 TFK U 3212 M STR W 6262 TFK 626 E 1024 AEG TFK TELEFUNKEN stel 320 SIE20

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT /¿45128441, 45128841, 45128163 128M-bit Synchronous DRAM 4-bank, LVTTL Description The ,45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 x 4 x 4, 4,194,304 x 8 x 4, 2,097,152 x 16 x 4 word x bit x bank , respectively.


    OCR Scan
    PDF uPD45128441 uPD45128841 uPD45128163 128M-bit 728-bit 54-pin 12650EJ9V0D PD45128441, uPD45128xxx

    TFK 526

    Abstract: TFK 626 E 1024 Pioneer pa 4010 sie200 Pioneer PA 0016 TFK 839 AEG TFK TELEFUNKEN Tfk 880 745 TFK U 3212 M tfk U 209 B 55 A 436
    Text: Tem ic Sales Offices Semiconductors Addresses Europe Denmark Italy Sweden TEMIC Dansk c/o AEG Industri A/S Roskildevej 8 -10 2620 Albertsiund Tel: 45 42 6485 22 Fax: 45 43 6262 28 TEMIC TELEFUNKEN micro­ electronic GmbH Kruppstrasse 6 45128 Essen Tel: 49 201 24730 0


    OCR Scan
    PDF 761-B 01-Jul-96 TFK 526 TFK 626 E 1024 Pioneer pa 4010 sie200 Pioneer PA 0016 TFK 839 AEG TFK TELEFUNKEN Tfk 880 745 TFK U 3212 M tfk U 209 B 55 A 436

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT /¿ P D 4 5 1 2 8 4 4 1 - A 7 5 , 4 5 1 2 8 8 4 1 - A 7 5 128M-bit Synchronous DRAM, 133MHz 4-bank, LVTTL Description The ^¡45128441-A75, 45128841-A75 are high-speed 134,217,728-bit synchronous dynam ic random-access


    OCR Scan
    PDF 128M-bit 133MHz PD45128441-A75, 45128841-A75 728-bit 54-pin 14030EJ1V 0DS00

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT //45128441,45128841,45128163 128M-bit Synchronous DRAM 4-bank, LVTTL Description The ,45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 x 4 x 4, 4,194,304 x 8 x 4, 2,097,152 x 16 x 4 word x bit x bank , respectively.


    OCR Scan
    PDF //PD45128441 128M-bit uPD45128441 728-bit 54-pin 12650EJ80D