APT81H50L
Abstract: APT81H50B2 MIC4452 A1270 ultra fast recovery diode 500V
Text: APT81H50B2 APT81H50L 500V, 81A, 0.07Ω Max, trr ≤260ns N-Channel Ultrafast Recovery FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for
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APT81H50B2
APT81H50L
260ns
O-247
APT81H50L
APT81H50B2
MIC4452
A1270
ultra fast recovery diode 500V
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f1010e
Abstract: to-218 IRF1010N IRFP054N PE10 TOP100-4 A19-B
Text: PD - 9.1382A IRFP054N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.012Ω G ID = 81A S Description Fifth Generation HEXFETs from International Rectifier
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IRFP054N
O-247
f1010e
to-218
IRF1010N
IRFP054N
PE10
TOP100-4
A19-B
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f1010e
Abstract: IRFP054N SS2000 DIODE marking le st TO-247AC Package IRF1010N PE10
Text: PD - 9.1382A IRFP054N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.012Ω G ID = 81A S Description Fifth Generation HEXFETs from International Rectifier
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IRFP054N
O-247
f1010e
IRFP054N
SS2000
DIODE marking le st
TO-247AC Package
IRF1010N
PE10
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irf1010e
Abstract: irf1010e equivalent *f1010e
Text: PD - 9.1670B IRF1010E HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 60V RDS on = 0.012Ω G ID = 81A
S Description Fifth Generation HEXFETs from International Rectifier
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1670B
IRF1010E
O-220
irf1010e
irf1010e equivalent
*f1010e
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IRFP4668PBF
Abstract: diode AE 81A
Text: IRFP4668PBF TO-247AC Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l l l l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
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IRFP4668PBF
O-247AC
O-247AC
IRFPE30
IRFP4668PBF
diode AE 81A
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IRFP4668
Abstract: No abstract text available
Text: PD -97140 IRFP4668PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D Benefits l Improved Gate, Avalanche and Dynamic dV/dt
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IRFP4668PbF
O-247AC
92mbly
IRFPE30
O-247AC
IRFP4668
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IRFP4668
Abstract: IRFP4668PbF AN-994 4.5V to 100V input regulator a/kvp 81A DIODE
Text: PD -97140 IRFP4668PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D Benefits l Improved Gate, Avalanche and Dynamic dV/dt
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IRFP4668PbF
O-247AC
IRFPE30
O-247AC
IRFP4668
IRFP4668PbF
AN-994
4.5V to 100V input regulator
a/kvp 81A DIODE
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zener 8m
Abstract: FMMZ5232 8Y SOT23 FMMZ5233 FMMZ5234 FMMZ5235 FMMZ5236 FMMZ5237 FMMZ5238 FMMZ5239
Text: FMMZ5232 to FMMZ5257 ISSUE 2 - SEPTEMBER 1995 ELECTRICAL CHARACTERISTICS at Tamb = 25°C . Type No FMMZ5232 to FMMZ5257 SOT23 SILICON VOLTAGE REGULATOR DIODES ✪ PIN CONFIGURATION Test Max. Zener Max. Reverse Leakage Current Max. Zener Nominal Current Impedance
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FMMZ5232
FMMZ5257
FMMZ5233
FMMZ5234
FMMZ5235
FMMZ5236
FMMZ5254
zener 8m
FMMZ5232
8Y SOT23
FMMZ5233
FMMZ5234
FMMZ5235
FMMZ5236
FMMZ5237
FMMZ5238
FMMZ5239
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Untitled
Abstract: No abstract text available
Text: SKM 75GB063D 8 19 : % ! Absolute Maximum Ratings Symbol Conditions IGBT )' ; 8 19 :) ) ; 8 /90 :) )?@ =00 ( /00 - 8 >9 :) >9 - /90 - B 10 ( ; 8 /19 :) /0 G 8 19 :) >9 - 8 H0 :) 90 - /90 - ; 8 /90 :) II0 - 8 19 :)
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75GB063D
75GAR063D
75GAL063D
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Untitled
Abstract: No abstract text available
Text: 19-2678; Rev 0; 9/02 Quick-PWM Master Controllers for VoltagePositioned CPU Core Power Supplies IMVP-IV Features The MAX1907A/MAX1981A are single-phase, QuickPWM master controllers for IMVP-IV™ CPU core supplies. Multi-phase operation is achieved using a
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MAX1907A/MAX1981A
MAX1980)
MAX1907A/
MAX1981A
MAX1907A/MAX1981A
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max1907
Abstract: max1907A MAX1907AETL IRF 444 H sanyo 8713 IRf 447 MOSFET MAX1981A "Op Amp" lm 324 inductor sp IRf 444 MOSFET
Text: 19-2678; Rev 0; 9/02 Quick-PWM Master Controllers for VoltagePositioned CPU Core Power Supplies IMVP-IV Applications IMVP-IV Notebook Computers Single-Phase CPU Core Supply Multiphase CPU Core Supply Voltage-Positioned Step-Down Converters Servers/Desktop Computers
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MAX1980)
200kHz/300kHz/550kHz/1000kHz
MAX1907A
40-Pin
MAX1907A/MAX1981A
max1907
MAX1907AETL
IRF 444 H
sanyo 8713
IRf 447 MOSFET
MAX1981A
"Op Amp" lm 324
inductor sp
IRf 444 MOSFET
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Untitled
Abstract: No abstract text available
Text: SKM 75GB063D 8 19 : % ! Absolute Maximum Ratings Symbol Conditions IGBT )' ; 8 19 :) ) ; 8 /90 :) )?@ =00 ( /00 - 8 >9 :) >9 - /90 - B 10 ( ; 8 /19 :) /0 G 8 19 :) >9 - 8 H0 :) 90 - /90 - ; 8 /90 :) II0 -
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75GB063D
75GAR063D
75GAL063D
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AON6444L
Abstract: No abstract text available
Text: AON6444L 60V N-Channel MOSFET TM SDMOS General Description Product Summary The AON6444L is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited
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AON6444L
AON6444L
ON6444L
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Untitled
Abstract: No abstract text available
Text: SKM 75GB063D 8 19 : % ! Absolute Maximum Ratings Symbol Conditions IGBT )' ; 8 19 :) ) ; 8 /90 :) )?@ =00 ( /00 - 8 >9 :) >9 - /90 - B 10 ( ; 8 /19 :) /0 G 8 19 :) >9 - 8 H0 :) 90 - /90 - ; 8 /90 :) II0 - 8 19 :)
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75GB063D
75GAR063D
75GAL063D
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Untitled
Abstract: No abstract text available
Text: SIEMENS GaAs IRL 80A IRL 81A GaAIAs INFRARED EMITTER Package Dimensions in Inches mm .650(16.51) 230 (5.84) 220 (5.59) .100 {2 54) .080 (2.03) 1' 092 (2.34) 082 (2.OS) ,180(4.57) .170(4.32) „ Mold mark 0 .061 (1.52) .067 (1.70) 057(1.45) ,01 (.25) indent,
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TAs25
IRL80A
BOA/81
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IRL80A
Abstract: No abstract text available
Text: SIEM EN S GaAs -fit IR L 80A GaAIAs IRL 81A Infrared Emitter Dimensions in inches mm .660(16.51) .630 (16,00) - .230(5.84) .220 (5.59) .100(2.54) .080 (2.03) 092 (2.34) .082 (2.08) |-.06 L io o (2.54) Plastic méiKing .061 (1.52}-J •OK) (0.76) R - ^ .025 (0.64)
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IRL-80A
GE006461
IRL80A:
IRL81A:
IRL81
IRL80A
IRL81A
IRL81A
IRL80A
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Untitled
Abstract: No abstract text available
Text: SIEMENS GaAs IRL 80A IRL 81A GaAIAs Infrared Emitter Dimensions in inches mm .650(16.51) .630 (16.00) r t .06(1.52) 100 (2.54) Anode APPLICATIONS • Beam interruption usage • Light barriers DESCRIPTION .100 (2.54) .080 (2.03) 092 (2.34) 082 (2.08) Cathode
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IRL80A:
IRL81A:
18-pln
fl535t
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Philips schema
Abstract: facon diode haute tension induction heating schema K81A noise diode ks1A Scans-0017953
Text: [K8ÏÂ PHILIPS NOISE DIODE for use as a standard noise source for metric waves DIODE DE SOUFFLE pour utilisation comme source de bruit étalon pour ondes métriques RAUSCHDIODE zur Verwendung als Normalrauschquelle für Meterwellen Heating : direct by A.C. or D.C.
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rop 101
Abstract: No abstract text available
Text: IN TE G R A TE D CIRCUITS EMTA S&flEET PCF84C81A Telecom microcontroller 1998 Apr 20 Product specification Supersedes data of 1996 Nov 20 File under Integrated Circuits, IC14 Philips Semiconductors PHILIPS PHILIPS Philips S e m ico nd uctors P ro d u c t specification
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PCF84C81A
455102/00/04/pp20
rop 101
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ZENER 34b
Abstract: zener diode 33B marking 43b zener 35b 52B zener 46B zener Zener diode 81A MARKING 46B 47B diode 43B diode
Text: CMBZ52XX series SILICON PLANAR ZENER DIODES General purpose zener diodes PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = ANODE 2 = NC 3 = CATHODE _3.0 2.8 0.14 0.48 "538 2.6 2.4 _ 1. 02 _ 0.89 _2 .00 _ 0.60 0.40 Marking CMBZ5230B 31B 32B
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CMBZ52XX
CMBZ5230B
CMBZ5239B
CMBZ5248B
CMBZ5257B=
ZENER 34b
zener diode 33B
marking 43b
zener 35b
52B zener
46B zener
Zener diode 81A
MARKING 46B
47B diode
43B diode
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ZENER 34b
Abstract: 5252B 5255B zener diode 33B CMBZ52XX 43B MARKING 8f zener CMBZ-5252B 40b marking diode 43b
Text: CMBZ52XX series SILICON PLANAR ZENER DIODES General purpose zener diodes PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = ANODE 2 = NC 3 = CATHODE _3.0 2.8 0.14 0.48 "538 2.6 2.4 _ 1. 02 _ 0.89 _2 .00 _ 0.60 0.40 Marking CMBZ5230B 31B 32B
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CMBZ52XX
CMBZ5230B
CMBZ5239B
CMBZ5248B
CMBZ5257B=
CMBZ-5252B
CMBZ-5253B
CMBZ-5254B
ZENER 34b
5252B
5255B
zener diode 33B
43B MARKING
8f zener
40b marking
diode 43b
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81g diode
Abstract: 8F sot23 Z14 SOT23-5 8Y SOT23 zener diode 22v
Text: Zener Diode BZX84C 350mW MMBZ5221B - 5256B miniReel Order f' Number Volt SOT23 2.4V 2.7V 3.0V 3.3V 3.9V 4.3V 4.7V 5.1V 5.6V 6.2V 6.8V 7.5V 8.2V 9.1V 10V 12V 15V 16V 18V 20V 22V 24V 27V 30V 72-5221 72-5223 72-5225 72-5226 72-5228 72-5229 72-5230 72-5231 72-5232
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BZX84C
350mW
MMBZ5221B
5256B
BZX84
Z17/W9
81g diode
8F sot23
Z14 SOT23-5
8Y SOT23
zener diode 22v
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BZX 12v zener diode
Abstract: No abstract text available
Text: Zener Diode BZX84C MMBZ5221B - 5256B 4 Volt Type BZX 84 T ype M M BZ Part M arkings BZX MMBZ " m iniR eel O rder N um ber 500pcs. IniniB ag 72-5221 72-5223 72-5225 72-5226 72-5228 72-5229 72-5230 72-5231 72-5232 72-5234 72-5235 72-5236 72-5237 72-5239 72-5240
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BZX84C
MMBZ5221B
5256B
500pcs.
BZX84C7V5
BZX84C8V2
BZX84C9V1
BZX84C10V
BZX84C1IV
BZX84C12V
BZX 12v zener diode
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sot23 transistor marking y2
Abstract: BZXB4C10 marking 8A sot-23 y2 sot23 marking y1 sot-23 transistor marking w9 8c SOT 23 8y transistor marking 62. SOT23 TRANSISTOR MARKING YB
Text: SURFACE MOUNT PRODUCTS — SOT-23 continued SOT-23 Zener Diodes Pinout 1-Anode, 2-N.C., 3-Cathode (Tolerance ± 5%) VZ (Norn) Volts U.S. Standards Device Marking 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.0 6.2 6.8 7.5 8.2 8.7 9.1 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0
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OT-23
OT-23
MMBZ5226
MMBZ5227
MMBZ5228
MMBZ5229
BZX84C4V3
MMBZ5230
BZX84C4V7
MMBZ5231
sot23 transistor marking y2
BZXB4C10
marking 8A sot-23
y2 sot23
marking y1 sot-23
transistor marking w9
8c SOT 23
8y transistor
marking 62. SOT23
TRANSISTOR MARKING YB
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