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    Infineon Technologies AG IRF1010EZPBF

    MOSFET N-CH 60V 75A TO220AB
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    Infineon Technologies AG IRF1010ESTRLPBF

    MOSFET N-CH 60V 84A D2PAK
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    Infineon Technologies AG IRF1010EPBF

    MOSFET N-CH 60V 84A TO220AB
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    Infineon Technologies AG IRF1010EZ

    MOSFET N-CH 60V 75A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF1010EZ Tube 250
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    Infineon Technologies AG IRF1010EZS

    MOSFET N-CH 60V 75A D2PAK
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    IRF1010E Datasheets (37)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF1010E International Rectifier 60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRF1010E with Standard Packaging Original PDF
    IRF1010E International Rectifier HEXFET Power MOSFET Original PDF
    IRF1010E International Rectifier HEXFET Power MOSFET Original PDF
    IRF1010E Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRF1010E International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 60V, 81A, Pkg Style TO-220AB Scan PDF
    IRF1010EL International Rectifier 60V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRF1010EL with Standard Packaging Original PDF
    IRF1010EL International Rectifier HEXFET Power MOSFET Original PDF
    IRF1010EL International Rectifier HEXFET Power MOSFET Original PDF
    IRF1010EL Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRF1010ELPBF International Rectifier 60V Single N-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRF1010EL with Lead Free Packaging Original PDF
    IRF1010ELPBF International Rectifier TRANS MOSFET N-CH 60V 84A 3TO-262 Original PDF
    IRF1010EPBF International Rectifier 60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; Similar to the IRF1010E with Lead-Free Packaging. Original PDF
    IRF1010EPBF International Rectifier TRANS MOSFET N-CH 60V 84A 3TO-220AB Original PDF
    IRF1010ES International Rectifier HEXFET Power Mosfet Original PDF
    IRF1010ES International Rectifier HEXFET Power Mosfet Original PDF
    IRF1010ES International Rectifier 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRF1010ES with Standard Packaging Original PDF
    IRF1010ES Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRF1010ESL International Rectifier HEXFET Power Mosfet Original PDF
    IRF1010ESPBF International Rectifier TRANS MOSFET N-CH 60V 84A 3D2-PAK Original PDF
    IRF1010ESPBF International Rectifier 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF1010ES with Lead Free Packaging Original PDF

    IRF1010E Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    AN-994

    Abstract: IRF1010EL IRF1010ES IRF530S IRF1010ELPBF
    Text: PD - 95444 Advanced Process Technology l Surface Mount IRF1010ES l Low-profile through-hole (IRF1010EL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRF1010ESPbF IRF1010ELPbF l HEXFET Power MOSFET D VDSS = 60V


    Original
    IRF1010ES) IRF1010EL) IRF1010ESPbF IRF1010ELPbF EIA-418. AN-994 IRF1010EL IRF1010ES IRF530S IRF1010ELPBF PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 91670 IRF1010E HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 60V RDS on = 12mΩ G ID = 84A‡ S Description Advanced HEXFET® Power MOSFETs from International


    Original
    IRF1010E O-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94965 IRF1010EPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 60V RDS on = 12mΩ G ID = 84A‡ S Description


    Original
    IRF1010EPbF O-220 fo20AB PDF

    irf1010e

    Abstract: irf1010e equivalent *f1010e
    Text: PD - 9.1670B IRF1010E HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 60V RDS on = 0.012Ω G ID = 81A… S Description Fifth Generation HEXFETs from International Rectifier


    Original
    1670B IRF1010E O-220 irf1010e irf1010e equivalent *f1010e PDF

    51a marking

    Abstract: IRF1010EZS AN-994 IRF1010EZ IRF1010EZL
    Text: PD - 94724B IRF1010EZ IRF1010EZS IRF1010EZL AUTOMOTIVE MOSFET HEXFET Power MOSFET Features O O O O O O Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax


    Original
    94724B IRF1010EZ IRF1010EZS IRF1010EZL O-220AB 51a marking IRF1010EZS AN-994 IRF1010EZ IRF1010EZL PDF

    irf1010e equivalent

    Abstract: irfp250n equivalent IRF744 equivalent IRFP260n equivalent IRF9540N equivalent IRF730A equivalent IRFBE30 equivalent irfp260n IRF4905 equivalent IRFU9120 equivalent
    Text: International Rectifier MOSFETs MOSFETs Continued HEXFETª Power MOSFETs Ñ TO-220AB (continued) N-Channel (continued) Mfr.Õs Type IRFZ24N* IRF1010E* IRFZ44E* IRFZ34E* IRFZ14* IRF2807* IRF3710* IRF1310N* IRF540N* IRF530N* IRF520N* IRF510* IRF3415* IRF640N


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    O-220AB O-220 IRFZ24N* IRFIZ24N IRFD024 IRF1010E* IRFI1310N IRFD014 IRFZ44E* IRFI540N irf1010e equivalent irfp250n equivalent IRF744 equivalent IRFP260n equivalent IRF9540N equivalent IRF730A equivalent IRFBE30 equivalent irfp260n IRF4905 equivalent IRFU9120 equivalent PDF

    AN-994

    Abstract: IRF1010EL IRF1010ES *f1010e
    Text: PD - 91720 IRF1010ES IRF1010EL l l l l l l Advanced Process Technology Surface Mount IRF1010ES Low-profile through-hole (IRF1010EL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 60V RDS(on) = 12mΩ G Description


    Original
    IRF1010ES IRF1010EL IRF1010ES) IRF1010EL) AN-994 IRF1010EL IRF1010ES *f1010e PDF

    IRF1010E

    Abstract: No abstract text available
    Text: PD - 91670 IRF1010E HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 60V RDS on = 12mΩ G ID = 84A‡ S Description Advanced HEXFET® Power MOSFETs from International


    Original
    IRF1010E O-220 O-220AB IRF1010E PDF

    AN-994

    Abstract: IRF1010EL IRF1010ES
    Text: PD - 91720 IRF1010ES IRF1010EL l l l l l l Advanced Process Technology Surface Mount IRF1010ES Low-profile through-hole (IRF1010EL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 60V RDS(on) = 12mΩ G Description


    Original
    IRF1010ES IRF1010EL IRF1010ES) IRF1010EL) AN-994 IRF1010EL IRF1010ES PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94965B IRF1010EPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 60V RDS on = 12mΩ G ID = 84A‡ S Description


    Original
    94965B IRF1010EPbF O-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94724C IRF1010EZ IRF1010EZS IRF1010EZL AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax


    Original
    94724C IRF1010EZ IRF1010EZS IRF1010EZL O-220AB PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94965B IRF1010EPbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 60V RDS on = 12mΩ G ID = 84A‡ S Description


    Original
    94965B IRF1010EPbF O-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94724 IRF1010EZ AUTOMOTIVE MOSFET HEXFET Power MOSFET Features O O O O O O Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 60V RDS on = 8.5mΩ


    Original
    IRF1010EZ O-220AB IRF1010 PDF

    AN-994

    Abstract: IRF1010EZ IRF1010EZL IRF1010EZS
    Text: PD - 95483 AUTOMOTIVE MOSFET Features O Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax O Lead-Free O O O O O IRF1010EZPbF IRF1010EZSPbF IRF1010EZLPbF


    Original
    IRF1010EZPbF IRF1010EZSPbF IRF1010EZLPbF EIA-418. O-220AB AN-994 IRF1010EZ IRF1010EZL IRF1010EZS PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF1010E l l l l l l TO-220AB Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Description Power MOSFET The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation


    Original
    IRF1010E O-220AB O-220 PDF

    AN-994

    Abstract: IRF1010EZ IRF1010EZL IRF1010EZS 9472
    Text: PD - 94724C IRF1010EZ IRF1010EZS IRF1010EZL AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax


    Original
    94724C IRF1010EZ IRF1010EZS IRF1010EZL O-220AB AN-994 IRF1010EZ IRF1010EZL IRF1010EZS 9472 PDF

    IRF1010EL

    Abstract: ISD 1720 mosfet k 61 y1 AN-994 IRF1010E IRF1010ES
    Text: PD - 9.1720 IRF1010ES/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF1010ES Low-profile through-hole (IRF1010EL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 60V RDS(on) = 0.012Ω G ID = 83A†


    Original
    IRF1010ES/L IRF1010ES) IRF1010EL) IRF1010EL ISD 1720 mosfet k 61 y1 AN-994 IRF1010E IRF1010ES PDF

    *f1010e

    Abstract: irf1010e equivalent IRF1010E
    Text: PD - 91670 IRF1010E HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 60V RDS on = 12mΩ G ID = 84A‡ S Description Advanced HEXFET® Power MOSFETs from International


    Original
    IRF1010E O-220 *f1010e irf1010e equivalent IRF1010E PDF

    IRF1010E

    Abstract: No abstract text available
    Text: P D -9 .1 6 7 0 B International I R Rectifier IRF1010E HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Vdss = 60 V R ü S o n = 0.0120 . ID = 81 A © Description Fifth G e n e ratio n H E X F E T s from International Rectifier


    OCR Scan
    IRF1010E IRF1010E PDF

    IRF1010E

    Abstract: *f1010e
    Text: P D - 9 .1670A International IGR Rectifier IRF1010E H E X FE T Pow er M O S F E T • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Vqss - 6 0 V f^DS on = 0 . 0 1 2 0 lD = 81 A®


    OCR Scan
    IRF1010E O-220 IRF1010E *f1010e PDF

    IRF1010E

    Abstract: IOR 1010
    Text: International lö R Rectifier P D - 9 .1 6 7 0 IRF1010E PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated V dss f^DS on = 60 V = 0.01 2Q. ID = 81 A Description


    OCR Scan
    IRF1010E IRF1010E IOR 1010 PDF

    IRF1010E

    Abstract: *f1010e T0-262 EIA marking code RV surface mount diode
    Text: PD- 9.1720 In te rn a tio n a l I ö R Rectifier IR F 1 0 1 0 E S /L HEXFET Power MOSFET • • • • • • Advanced Process Technology Surface Mount IRF101OES Low-profile through-hole (IRF1010EL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated


    OCR Scan
    IRF101OES) IRF1010EL) IRF1010E *f1010e T0-262 EIA marking code RV surface mount diode PDF

    Untitled

    Abstract: No abstract text available
    Text: P D - 9 .1 7 2 0 International IQ R Rectifier IR F 1 0 1 0 E S /L HEXFET^ Power MOSFET Advanced Process Technology Surface Mount IRF1010ES Low-profile through-hole (IRF1010EL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated V dss = 6 0 V


    OCR Scan
    IRF1010ES) IRF1010EL) PDF

    *f1010e

    Abstract: IRF1010E IRF 315
    Text: PD - 9.1670A International IO R Rectifier IRF1010E HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Vdss = R ü S o n = Id 60V 0.012Í2 = 81 A(D Description Fifth G e n e ratio n H E X F E T s from International R ectifier


    OCR Scan
    IRF1010E *f1010e IRF1010E IRF 315 PDF