cf mark
Abstract: MAX232 internal block diagram CPU08 M146805 M6805 M68HC05 M68HC08 MC68HC908EY16A MC68HC908EY8A freescale superflash
Text: MC68HC908EY16A MC68HC908EY8A Data Sheet M68HC08 Microcontrollers MC68HC908EY16A Rev. 0 04/2006 freescale.com MC68HC908EY16A MC68HC908EY8A Data Sheet To provide the most up-to-date information, the revision of our documents on the World Wide Web will be the most current. Your printed copy may be an earlier revision. To verify you have the latest information
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MC68HC908EY16A
MC68HC908EY8A
M68HC08
cf mark
MAX232 internal block diagram
CPU08
M146805
M6805
M68HC05
M68HC08
MC68HC908EY16A
MC68HC908EY8A
freescale superflash
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8254aa
Abstract: capacitor NED je8 S-8353A33MC-IQS-T2 S-8254 battery c2u G83 PNP Transistor b9d s2914 S-8355M50MC-MDJ-T2 AVR 8335 M6M80041
Text: Network Components Business Unit CMOS IC Product Catalogue 2002-2003 October 2002 SII offers data sheets on the Internet. On SII-IC.COM, SII offers data sheets which summarize the specifications of each IC. For the latest information, access the following WEB site.
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CAC0210EJ0150-10/C
8254aa
capacitor NED je8
S-8353A33MC-IQS-T2
S-8254 battery
c2u G83
PNP Transistor b9d
s2914
S-8355M50MC-MDJ-T2
AVR 8335
M6M80041
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QP7C261-25LI
Abstract: GDFP2-F24 5962-9080307MJA QP7C261 CQCC1-N28 QP7C261-35QMB 5962-9080306MLA QP7C263-25JC QP7C264 QP7C261-25WMB
Text: QP7C261 / QP7C263 / QP7C264 May 4, 2011 8K x 8 Power-Switched and Reprogrammable PROM Features • 5V ±10% VCC, commercial, industrial and military • Windowed Packages available for reprogrammability • OTP One-Time-Programmable Packages available • High speed
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QP7C261
QP7C263
QP7C264
300-mil
600-mil
QP7C261)
QP7C261,
QP7C263,
QP7C264
8192-word
QP7C261-25LI
GDFP2-F24
5962-9080307MJA
CQCC1-N28
QP7C261-35QMB
5962-9080306MLA
QP7C263-25JC
QP7C261-25WMB
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HN58C66P-25
Abstract: Hitachi DSA00164
Text: HN58C66 Series 8192-word x 8-bit CMOS Electrically Erasable and Programmable CMOS ROM ADE-203-375F Z Rev. 6.0 Apr. 12, 1995 Description The Hitachi HN58C66 is a electrically erasable and programmable ROM organized as 8192-word × 8-bit. It realizes high speed, low power consumption, and a high level of reliability, employing advanced MNOS
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HN58C66
8192-word
ADE-203-375F
32-byte
HN58C66FP
FP-28D)
HN58C66P-25
Hitachi DSA00164
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HN58S65ATI-15
Abstract: Hitachi DSA00197
Text: HN58S65AI Series 8192-word x 8-bit Electrically Erasable and Programmable CMOS ROM ADE-203-670 Z Preliminary Rev. 0.2 Sep. 4, 1997 Description The Hitachi HN58S65AI series is a electrically erasable and programmable ROM organized as 8192-word × 8-bit. It has realized high speed, low power consumption and reliability by employing advanced MNOS
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HN58S65AI
8192-word
ADE-203-670
64-byte
HN58S65ATI-15
Hitachi DSA00197
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10ST10
Abstract: lq55
Text: Ordering n u m b e r:EN4794B CMOS LSI LC3564S, SS, SM, ST-70/85/10 64K 8192wordsX8 bits SRAM Overview The LC3564S, LC3564SS, LC3564SM, and LC3564ST are asynchronous silicon gate CMOS static RAMs with an 8192-word X 8-bit organization. These SRAMs are full CMOS type
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EN4794B
LC3564S,
ST-70/85/10
8192wordsX8
LC3564SS,
LC3564SM,
LC3564ST
8192-word
10ST10
lq55
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NE as7
Abstract: G1712
Text: Ordering number: EN4794B CMOS LSI LC3564S, SS. SM. ST-70/85/10 64K 8192words X 8 bits SRAM Overview The LC3564S, LC3564SS, LC3564SM, and LC3564ST are asynchronous silicon gate CM OS static RAM s w ith an 8192-word X 8-bit organization. These SRAM s are fu ll CM OS type
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EN4794B
LC3564S,
ST-70/85/10
8192words
LC3564SS,
LC3564SM,
LC3564ST
8192-word
NE as7
G1712
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ST7035
Abstract: sanyo tas 2110 LC3564S LC3564SM LC3564SS LC3564ST ST-70 dip28 600mil package
Text: Ordering n u m b e r:EN4794B CMOS LSI LC3564S, SS, SM, ST-70/85/10 64K 8192wordsX8 bits SRAM O verview The LC3564S, LC3564SS, LC3564SM, and LC3564ST are asynchronous silicon gate CMOS static RAMs with an 8192-word X 8-bit organization. These SRAMs are full CMOS type
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EN4794B
LC3564S,
ST-70/85/10
8192wordsX8
LC3564SS,
LC3564SM,
LC3564ST
8192-word
ST7035
sanyo tas 2110
LC3564S
LC3564SM
LC3564SS
ST-70
dip28 600mil package
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MB81C79
Abstract: No abstract text available
Text: October 1989 Edition 1.0 DATA SHEET fu J itsu = MB81C79B-35/-45 CMOS 72K-BIT HIGH SPEED SRAM 8192-WORDS x 9-BIT HIGH SPEED CMOS STATIC RANDOM ACCESS MEMORY WITH AUTOMATIC POWER DOWN The Fujitsu MB81C79B is 8192words x 9bits static random access memory fabricated with a
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MB81C79B-35/-45
72K-BIT
8192-WORDS
MB81C79B
8192words
D28018S-2C
MB81C79B-35
MB81C79B-45
28-LEAD
MB81C79
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Untitled
Abstract: No abstract text available
Text: Ordering num ber: EN4794B SANYO CMOS LSI N0.4794B LC3564S. SS, SM , ST-70/85/10 i 64K 8192words X 8 bits SRAM Overview T he LC3564S, LC3564SS, LC3564SM, and LC3564ST are asynchronous silicon gate CMOS static RAMs w ith a n 8192-word X 8-bit organization. These SRAMs are full CMOS type
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EN4794B
4794B
LC3564S,
ST-70/85/10
8192wordsX8
LC3564SS,
LC3564SM,
LC3564ST
8192-word
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Untitled
Abstract: No abstract text available
Text: HN58S65A Series 8192-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-691 Z Preliminary Rev. 0.0 Dec. 5, 1996 Description The Hitachi HN58S65A series is a electrically erasable and programmable EEPROM’s organized as 8192word x 8-bit employing advanced MNOS memory technology and CMOS process and circuitry
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HN58S65A
8192-word
ADE-203-691
8192word
32-byte
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cxk5863b
Abstract: CXK5863BM
Text: SONY CXK5863BP/BM/BJ -25/30/35 8192-word x 8-bit High Speed CMOS Static RAM D escription CXK5863BP 28 pin DIP Plastic CXK5863BP/BM/BJ are 65,536 bits high speed CMOS static RAMs organized as 8,192 words by 8-bit and operate from a single 5V supply. These devices are
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CXK5863BP/BM/BJ
CXK5863BP
8192-word
25ns/30ns/35ns
300mW
CXK5863BM
CXK5863BJ
cxk5863b
CXK5863BM
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CY7C263-35PC
Abstract: 7C261 CY7C263 CY7C26345DMB cerdip z PACKAGE 7C264 C261 CY7C261 CY7C264 f1b0
Text: CY7C261 CY7C263/CY7C264 CYPRESS Features • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military) • Low power — 660 mW (commercial) — 770 m\V (military) • Super low standby power (7C261)
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CY7C261
C263/CY7C264
7C261)
300-mil
600-mil
CY7C261,
CY7C263,
CY7C264
8192-word
byGY7C264
CY7C263-35PC
7C261
CY7C263
CY7C26345DMB
cerdip z PACKAGE
7C264
C261
f1b0
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Untitled
Abstract: No abstract text available
Text: IDT70825S/L HIGH SPEED 128K 8K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) F e a tu re s ♦ ♦ ♦ ♦ * High-speed access * - M ilitary: 35/45ns (max.) - Com m ercial: 20/25/35/45ns (max.) Low-power operation - ID T70825S - A ddress based flags fo r b u ffer control
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IDT70825S/L
35/45ns
20/25/35/45ns
T70825S
80-pin
84-pin
MIL-PRF-38535
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Untitled
Abstract: No abstract text available
Text: HD404618/H D404616/ HD404614/HD4074618 Description — 5 us fOSC = 800 kHz This microcomputer unit was designed with the p o w erfu l and e ffic ie n t arc h itec tu re o f the HMCS400 family. The MCU incorporates a highp recision dual-tone m ultifrequency (DTM F)
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HD404618/H
D404616/
HD404614/HD4074618
HMCS400
32-kHz
HD404618/HD404616/HD404614/HD4074618
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Untitled
Abstract: No abstract text available
Text: DOC BU-61590 ILC DATA DEVICE CORPORATION — MIL-STD-1553A/B & Me AIR BC/RT/MT, ADVANCED COMMUNICATION ENGINE ACE FEATURES DESCRIPTION DDC’s BU-61590 BC/RT/MT Universal Advanced C om m unication Engine (ACE) terminal comprises a complete integrated interface between a host
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BU-61590
MIL-STD-1553A/B
BU-61590
BU61590
78-pin
1553B,
A3818,
A5232,
A5690
15/-15v
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PDF
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Untitled
Abstract: No abstract text available
Text: 8K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES DESCRIPTION • High-speed access time: 12, 15, 20, 25 ns The ISSI IS61C64AH is a very high-speed, low power, 8192-word by 8-bit static RAM. It is fabricated using ISSI' s high-performance CMOS technology. This highly reliable pro
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IS61C64AH
8192-word
IS61C64AH-12N
IS61C64AH-12J
300-mil
IS61C64AH-15N
IS61C64AH-15J
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6264alp
Abstract: 6264ALSP-10
Text: HM6264A Series 8192-word x 8-bit High Speed CMOS Static RAM i FEATURES H M 6264A P Series » Low Power Standby Standby: 0.1mW typ. 10/LtW (typ.) L-/LL-version Operating: 15mW/MHz (typ.) 100ns/120rts/150ns (max.) Low Power Operation • Fast access Time •
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HM6264A
8192-word
10/LtW
15mW/MHz
100ns/120rts/150ns
DP-28)
HM6264ASP
6264AP-10
HM6264AP-12
HM6264AP-15
6264alp
6264ALSP-10
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Untitled
Abstract: No abstract text available
Text: microCMOS NMC6164 8192 x 8-Bit Static RAM General Description Features The NMC6164 is a 8192-word by 8-bit new generation s ta tic RAM. It is fabricated w ith N a tio n a l's proprietary m icroC M O S do uble-polysilicon tech nolog y w hich com bines high pe rform ance and high de nsity w ith low power
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NMC6164
8192-word
28-pin
NMC6164
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Untitled
Abstract: No abstract text available
Text: HN58V65AI Series HN58V66AI Series HN58V65A-SR Series HN58V66A-SR Series 8192-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-759A Z Rev. 1.0 Aug. 29, 1997 Description The Hitachi HN58V65A series and HN58V66A series are a electrically erasable and programmable
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HN58V65AI
HN58V66AI
HN58V65A-SR
HN58V66A-SR
8192-word
ADE-203-759A
HN58V65A
HN58V66A
64-byte
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Untitled
Abstract: No abstract text available
Text: AKM 6264A Series 8192-word x 8-bit High Speed CMOS Static RAM FEATURES A K M 6 2 6 4 A P Series Low P ow er S ta n d b y S tan db y: L o w Power O peration O perating: • Fast access T im e 1 0 0 n s /1 2 0 n s /1 5 0 n s m a x . • Single + 5 V S upply
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8192-word
10juW
DP-28)
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28P2W-C
Abstract: M66255FP
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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M66255FP
10-BIT
28P2W-C
M66255FP
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M5M5178P,J-35,-45,-55 6 5 S 3 6 -B IT 8 1 9 2 -W O R D BY 8 -B IT CMOS STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) This is a fam ily o f 8 1 9 2 w ord by 8-b it static RAM s, fabri cated w ith the high performance C M OS silicon gate MOS
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M5M5178P
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Untitled
Abstract: No abstract text available
Text: HN58S65A Series 8192-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-691 Z Rev. 0.2 Preliminary Aug. 29, 1997 Description The Hitachi HN58S65A series is electrically erasable and programmable ROM organized as 8192-word X 8-bit. It has realized high speed, low power consumption and high reliability by employing advanced
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OCR Scan
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HN58S65A
8192-word
ADE-203-691
64-byte
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PDF
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