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    cf mark

    Abstract: MAX232 internal block diagram CPU08 M146805 M6805 M68HC05 M68HC08 MC68HC908EY16A MC68HC908EY8A freescale superflash
    Text: MC68HC908EY16A MC68HC908EY8A Data Sheet M68HC08 Microcontrollers MC68HC908EY16A Rev. 0 04/2006 freescale.com MC68HC908EY16A MC68HC908EY8A Data Sheet To provide the most up-to-date information, the revision of our documents on the World Wide Web will be the most current. Your printed copy may be an earlier revision. To verify you have the latest information


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    PDF MC68HC908EY16A MC68HC908EY8A M68HC08 cf mark MAX232 internal block diagram CPU08 M146805 M6805 M68HC05 M68HC08 MC68HC908EY16A MC68HC908EY8A freescale superflash

    8254aa

    Abstract: capacitor NED je8 S-8353A33MC-IQS-T2 S-8254 battery c2u G83 PNP Transistor b9d s2914 S-8355M50MC-MDJ-T2 AVR 8335 M6M80041
    Text: Network Components Business Unit CMOS IC Product Catalogue 2002-2003 October 2002 SII offers data sheets on the Internet. On SII-IC.COM, SII offers data sheets which summarize the specifications of each IC. For the latest information, access the following WEB site.


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    PDF CAC0210EJ0150-10/C 8254aa capacitor NED je8 S-8353A33MC-IQS-T2 S-8254 battery c2u G83 PNP Transistor b9d s2914 S-8355M50MC-MDJ-T2 AVR 8335 M6M80041

    QP7C261-25LI

    Abstract: GDFP2-F24 5962-9080307MJA QP7C261 CQCC1-N28 QP7C261-35QMB 5962-9080306MLA QP7C263-25JC QP7C264 QP7C261-25WMB
    Text: QP7C261 / QP7C263 / QP7C264 May 4, 2011 8K x 8 Power-Switched and Reprogrammable PROM Features • 5V ±10% VCC, commercial, industrial and military • Windowed Packages available for reprogrammability • OTP One-Time-Programmable Packages available • High speed


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    PDF QP7C261 QP7C263 QP7C264 300-mil 600-mil QP7C261) QP7C261, QP7C263, QP7C264 8192-word QP7C261-25LI GDFP2-F24 5962-9080307MJA CQCC1-N28 QP7C261-35QMB 5962-9080306MLA QP7C263-25JC QP7C261-25WMB

    HN58C66P-25

    Abstract: Hitachi DSA00164
    Text: HN58C66 Series 8192-word x 8-bit CMOS Electrically Erasable and Programmable CMOS ROM ADE-203-375F Z Rev. 6.0 Apr. 12, 1995 Description The Hitachi HN58C66 is a electrically erasable and programmable ROM organized as 8192-word × 8-bit. It realizes high speed, low power consumption, and a high level of reliability, employing advanced MNOS


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    PDF HN58C66 8192-word ADE-203-375F 32-byte HN58C66FP FP-28D) HN58C66P-25 Hitachi DSA00164

    HN58S65ATI-15

    Abstract: Hitachi DSA00197
    Text: HN58S65AI Series 8192-word x 8-bit Electrically Erasable and Programmable CMOS ROM ADE-203-670 Z Preliminary Rev. 0.2 Sep. 4, 1997 Description The Hitachi HN58S65AI series is a electrically erasable and programmable ROM organized as 8192-word × 8-bit. It has realized high speed, low power consumption and reliability by employing advanced MNOS


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    PDF HN58S65AI 8192-word ADE-203-670 64-byte HN58S65ATI-15 Hitachi DSA00197

    10ST10

    Abstract: lq55
    Text: Ordering n u m b e r:EN4794B CMOS LSI LC3564S, SS, SM, ST-70/85/10 64K 8192wordsX8 bits SRAM Overview The LC3564S, LC3564SS, LC3564SM, and LC3564ST are asynchronous silicon gate CMOS static RAMs with an 8192-word X 8-bit organization. These SRAMs are full CMOS type


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    PDF EN4794B LC3564S, ST-70/85/10 8192wordsX8 LC3564SS, LC3564SM, LC3564ST 8192-word 10ST10 lq55

    NE as7

    Abstract: G1712
    Text: Ordering number: EN4794B CMOS LSI LC3564S, SS. SM. ST-70/85/10 64K 8192words X 8 bits SRAM Overview The LC3564S, LC3564SS, LC3564SM, and LC3564ST are asynchronous silicon gate CM OS static RAM s w ith an 8192-word X 8-bit organization. These SRAM s are fu ll CM OS type


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    PDF EN4794B LC3564S, ST-70/85/10 8192words LC3564SS, LC3564SM, LC3564ST 8192-word NE as7 G1712

    ST7035

    Abstract: sanyo tas 2110 LC3564S LC3564SM LC3564SS LC3564ST ST-70 dip28 600mil package
    Text: Ordering n u m b e r:EN4794B CMOS LSI LC3564S, SS, SM, ST-70/85/10 64K 8192wordsX8 bits SRAM O verview The LC3564S, LC3564SS, LC3564SM, and LC3564ST are asynchronous silicon gate CMOS static RAMs with an 8192-word X 8-bit organization. These SRAMs are full CMOS type


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    PDF EN4794B LC3564S, ST-70/85/10 8192wordsX8 LC3564SS, LC3564SM, LC3564ST 8192-word ST7035 sanyo tas 2110 LC3564S LC3564SM LC3564SS ST-70 dip28 600mil package

    MB81C79

    Abstract: No abstract text available
    Text: October 1989 Edition 1.0 DATA SHEET fu J itsu = MB81C79B-35/-45 CMOS 72K-BIT HIGH SPEED SRAM 8192-WORDS x 9-BIT HIGH SPEED CMOS STATIC RANDOM ACCESS MEMORY WITH AUTOMATIC POWER DOWN The Fujitsu MB81C79B is 8192words x 9bits static random access memory fabricated with a


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    PDF MB81C79B-35/-45 72K-BIT 8192-WORDS MB81C79B 8192words D28018S-2C MB81C79B-35 MB81C79B-45 28-LEAD MB81C79

    Untitled

    Abstract: No abstract text available
    Text: Ordering num ber: EN4794B SANYO CMOS LSI N0.4794B LC3564S. SS, SM , ST-70/85/10 i 64K 8192words X 8 bits SRAM Overview T he LC3564S, LC3564SS, LC3564SM, and LC3564ST are asynchronous silicon gate CMOS static RAMs w ith a n 8192-word X 8-bit organization. These SRAMs are full CMOS type


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    PDF EN4794B 4794B LC3564S, ST-70/85/10 8192wordsX8 LC3564SS, LC3564SM, LC3564ST 8192-word

    Untitled

    Abstract: No abstract text available
    Text: HN58S65A Series 8192-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-691 Z Preliminary Rev. 0.0 Dec. 5, 1996 Description The Hitachi HN58S65A series is a electrically erasable and programmable EEPROM’s organized as 8192word x 8-bit employing advanced MNOS memory technology and CMOS process and circuitry


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    PDF HN58S65A 8192-word ADE-203-691 8192word 32-byte

    cxk5863b

    Abstract: CXK5863BM
    Text: SONY CXK5863BP/BM/BJ -25/30/35 8192-word x 8-bit High Speed CMOS Static RAM D escription CXK5863BP 28 pin DIP Plastic CXK5863BP/BM/BJ are 65,536 bits high speed CMOS static RAMs organized as 8,192 words by 8-bit and operate from a single 5V supply. These devices are


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    PDF CXK5863BP/BM/BJ CXK5863BP 8192-word 25ns/30ns/35ns 300mW CXK5863BM CXK5863BJ cxk5863b CXK5863BM

    CY7C263-35PC

    Abstract: 7C261 CY7C263 CY7C26345DMB cerdip z PACKAGE 7C264 C261 CY7C261 CY7C264 f1b0
    Text: CY7C261 CY7C263/CY7C264 CYPRESS Features • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military) • Low power — 660 mW (commercial) — 770 m\V (military) • Super low standby power (7C261)


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    PDF CY7C261 C263/CY7C264 7C261) 300-mil 600-mil CY7C261, CY7C263, CY7C264 8192-word byGY7C264 CY7C263-35PC 7C261 CY7C263 CY7C26345DMB cerdip z PACKAGE 7C264 C261 f1b0

    Untitled

    Abstract: No abstract text available
    Text: IDT70825S/L HIGH SPEED 128K 8K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) F e a tu re s ♦ ♦ ♦ ♦ * High-speed access * - M ilitary: 35/45ns (max.) - Com m ercial: 20/25/35/45ns (max.) Low-power operation - ID T70825S - A ddress based flags fo r b u ffer control


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    PDF IDT70825S/L 35/45ns 20/25/35/45ns T70825S 80-pin 84-pin MIL-PRF-38535

    Untitled

    Abstract: No abstract text available
    Text: HD404618/H D404616/ HD404614/HD4074618 Description — 5 us fOSC = 800 kHz This microcomputer unit was designed with the p o w erfu l and e ffic ie n t arc h itec tu re o f the HMCS400 family. The MCU incorporates a highp recision dual-tone m ultifrequency (DTM F)


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    PDF HD404618/H D404616/ HD404614/HD4074618 HMCS400 32-kHz HD404618/HD404616/HD404614/HD4074618

    Untitled

    Abstract: No abstract text available
    Text: DOC BU-61590 ILC DATA DEVICE CORPORATION — MIL-STD-1553A/B & Me AIR BC/RT/MT, ADVANCED COMMUNICATION ENGINE ACE FEATURES DESCRIPTION DDC’s BU-61590 BC/RT/MT Universal Advanced C om m unication Engine (ACE) terminal comprises a complete integrated interface between a host


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    PDF BU-61590 MIL-STD-1553A/B BU-61590 BU61590 78-pin 1553B, A3818, A5232, A5690 15/-15v

    Untitled

    Abstract: No abstract text available
    Text: 8K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES DESCRIPTION • High-speed access time: 12, 15, 20, 25 ns The ISSI IS61C64AH is a very high-speed, low power, 8192-word by 8-bit static RAM. It is fabricated using ISSI' s high-performance CMOS technology. This highly reliable pro­


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    PDF IS61C64AH 8192-word IS61C64AH-12N IS61C64AH-12J 300-mil IS61C64AH-15N IS61C64AH-15J

    6264alp

    Abstract: 6264ALSP-10
    Text: HM6264A Series 8192-word x 8-bit High Speed CMOS Static RAM i FEATURES H M 6264A P Series » Low Power Standby Standby: 0.1mW typ. 10/LtW (typ.) L-/LL-version Operating: 15mW/MHz (typ.) 100ns/120rts/150ns (max.) Low Power Operation • Fast access Time •


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    PDF HM6264A 8192-word 10/LtW 15mW/MHz 100ns/120rts/150ns DP-28) HM6264ASP 6264AP-10 HM6264AP-12 HM6264AP-15 6264alp 6264ALSP-10

    Untitled

    Abstract: No abstract text available
    Text: microCMOS NMC6164 8192 x 8-Bit Static RAM General Description Features The NMC6164 is a 8192-word by 8-bit new generation s ta tic RAM. It is fabricated w ith N a tio n a l's proprietary m icroC M O S do uble-polysilicon tech nolog y w hich com ­ bines high pe rform ance and high de nsity w ith low power


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    PDF NMC6164 8192-word 28-pin NMC6164

    Untitled

    Abstract: No abstract text available
    Text: HN58V65AI Series HN58V66AI Series HN58V65A-SR Series HN58V66A-SR Series 8192-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-759A Z Rev. 1.0 Aug. 29, 1997 Description The Hitachi HN58V65A series and HN58V66A series are a electrically erasable and programmable


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    PDF HN58V65AI HN58V66AI HN58V65A-SR HN58V66A-SR 8192-word ADE-203-759A HN58V65A HN58V66A 64-byte

    Untitled

    Abstract: No abstract text available
    Text: AKM 6264A Series 8192-word x 8-bit High Speed CMOS Static RAM FEATURES A K M 6 2 6 4 A P Series Low P ow er S ta n d b y S tan db y: L o w Power O peration O perating: • Fast access T im e 1 0 0 n s /1 2 0 n s /1 5 0 n s m a x . • Single + 5 V S upply


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    PDF 8192-word 10juW DP-28)

    28P2W-C

    Abstract: M66255FP
    Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


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    PDF M66255FP 10-BIT 28P2W-C M66255FP

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs M5M5178P,J-35,-45,-55 6 5 S 3 6 -B IT 8 1 9 2 -W O R D BY 8 -B IT CMOS STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) This is a fam ily o f 8 1 9 2 w ord by 8-b it static RAM s, fabri­ cated w ith the high performance C M OS silicon gate MOS


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    PDF M5M5178P

    Untitled

    Abstract: No abstract text available
    Text: HN58S65A Series 8192-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-691 Z Rev. 0.2 Preliminary Aug. 29, 1997 Description The Hitachi HN58S65A series is electrically erasable and programmable ROM organized as 8192-word X 8-bit. It has realized high speed, low power consumption and high reliability by employing advanced


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    PDF HN58S65A 8192-word ADE-203-691 64-byte