ME16
Abstract: 1772-LP1 LG plc plc lg 1772MEB 1772-LG plc Rockwell allen-bradley 1772-meb 1772-MEB 1772-LP3
Text: Installation Data PLCĆ2/20, PLCĆ2/30 Memory Modules AllenĆBradley PLCĆ2/20 and PLCĆ2/30 CMOS RAM Memory Modules Installation Data To the Installer CMOS RAM memory modules for the PLC-2/20 and the PLC-2/30 programmable controllers are available in two forms:
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PLC2/20,
PLC2/30
PLC2/20
PLC2/30
PLC-2/20
PLC-2/30
1772-ME
1772-MEB
1772-MR,
1772-ME8,
ME16
1772-LP1
LG plc
plc lg
1772MEB
1772-LG
plc Rockwell
allen-bradley 1772-meb
1772-LP3
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tlu 011
Abstract: CP12 CP14 CP15 CRC-32 4000 SERIES MOTOROLA land dpu 230 RX10B
Text: Architecture Guide C-5e/C-3e NETWORK PROCESSOR SILICON REVISION B0 C5EC3EARCH-RM Rev 04 PRODUCTION Architecture Guide C-5e/C-3e Network Processor Silicon Revision B0 C5EC3EARCH-RM Rev 04 Copyright 2004 Motorola, Inc. All rights reserved. No part of this documentation may
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engine control module seg np2
Abstract: tlu 115 tlu 011 CP15 CRC-32 CP12 CP14 l 83s 472 722 C3E 351 IBM powerpc 405 GPr 266MHz PROCESSOR
Text: Architecture Guide C-5e/C-3e NETWORK PROCESSOR SILICON REVISION B0 C5EC3EARCH-RM Rev 04 PRODUCTION Freescale Semiconductor, Inc., 2004. All rights reserved. Architecture Guide C-5e/C-3e Network Processor Silicon Revision B0 C5EC3EARCH-RM Rev 04 How to Reach Us:
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CH370
engine control module seg np2
tlu 115
tlu 011
CP15
CRC-32
CP12
CP14
l 83s 472 722
C3E 351
IBM powerpc 405 GPr 266MHz PROCESSOR
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S8550 equivalent
Abstract: 93cc46 66a hall sensor 8254ab d2 SMD TRANSISTORs pnp npn SOT-23-6 8254aa s2914 s-8254a S-80141ALMC MOTOROLA LITHIUM-ION msds
Text: Product Catalogue For customers want to select product from various lineups Various lineups of highly reliable products for your application Long operation and energy saving Liquid crystal/Plasma TVs ●Power supply circuit ・Voltage regulator ICs Mobile phones
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S-11L10
S-1135
S-1137
S-1702
S-1731
S-35199A/35399A
S-58LM20A
S-5842A
S-5841
S-5851A
S8550 equivalent
93cc46
66a hall sensor
8254ab
d2 SMD TRANSISTORs pnp npn SOT-23-6
8254aa
s2914
s-8254a
S-80141ALMC
MOTOROLA LITHIUM-ION msds
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10ST10
Abstract: lq55
Text: Ordering n u m b e r:EN4794B CMOS LSI LC3564S, SS, SM, ST-70/85/10 64K 8192wordsX8 bits SRAM Overview The LC3564S, LC3564SS, LC3564SM, and LC3564ST are asynchronous silicon gate CMOS static RAMs with an 8192-word X 8-bit organization. These SRAMs are full CMOS type
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EN4794B
LC3564S,
ST-70/85/10
8192wordsX8
LC3564SS,
LC3564SM,
LC3564ST
8192-word
10ST10
lq55
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NE as7
Abstract: G1712
Text: Ordering number: EN4794B CMOS LSI LC3564S, SS. SM. ST-70/85/10 64K 8192words X 8 bits SRAM Overview The LC3564S, LC3564SS, LC3564SM, and LC3564ST are asynchronous silicon gate CM OS static RAM s w ith an 8192-word X 8-bit organization. These SRAM s are fu ll CM OS type
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EN4794B
LC3564S,
ST-70/85/10
8192words
LC3564SS,
LC3564SM,
LC3564ST
8192-word
NE as7
G1712
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ST7035
Abstract: sanyo tas 2110 LC3564S LC3564SM LC3564SS LC3564ST ST-70 dip28 600mil package
Text: Ordering n u m b e r:EN4794B CMOS LSI LC3564S, SS, SM, ST-70/85/10 64K 8192wordsX8 bits SRAM O verview The LC3564S, LC3564SS, LC3564SM, and LC3564ST are asynchronous silicon gate CMOS static RAMs with an 8192-word X 8-bit organization. These SRAMs are full CMOS type
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EN4794B
LC3564S,
ST-70/85/10
8192wordsX8
LC3564SS,
LC3564SM,
LC3564ST
8192-word
ST7035
sanyo tas 2110
LC3564S
LC3564SM
LC3564SS
ST-70
dip28 600mil package
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MB81C79
Abstract: No abstract text available
Text: October 1989 Edition 1.0 DATA SHEET fu J itsu = MB81C79B-35/-45 CMOS 72K-BIT HIGH SPEED SRAM 8192-WORDS x 9-BIT HIGH SPEED CMOS STATIC RANDOM ACCESS MEMORY WITH AUTOMATIC POWER DOWN The Fujitsu MB81C79B is 8192words x 9bits static random access memory fabricated with a
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OCR Scan
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MB81C79B-35/-45
72K-BIT
8192-WORDS
MB81C79B
8192words
D28018S-2C
MB81C79B-35
MB81C79B-45
28-LEAD
MB81C79
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Untitled
Abstract: No abstract text available
Text: Ordering num ber: EN4794B SANYO CMOS LSI N0.4794B LC3564S. SS, SM , ST-70/85/10 i 64K 8192words X 8 bits SRAM Overview T he LC3564S, LC3564SS, LC3564SM, and LC3564ST are asynchronous silicon gate CMOS static RAMs w ith a n 8192-word X 8-bit organization. These SRAMs are full CMOS type
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EN4794B
4794B
LC3564S,
ST-70/85/10
8192wordsX8
LC3564SS,
LC3564SM,
LC3564ST
8192-word
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Untitled
Abstract: No abstract text available
Text: CMOS HIGH-SPEED STATIC RAM 72K 8K x 9-BIT PRELIMINARY INFORMATION IDT71569 With Address Latches DESCRIPTION: FEATURES: • 8192-words x 9-bits organization • Address Latch • Fast access time: — Commercial: 20/25ns — Military: 25/35ns • Battery backup operation - 2V data retention voltage
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8192-words
20/25ns
25/35ns
MIL-STD-883,
28-pin
IDT71569
IDT71569
728-bit
IDT715he
IDT71568
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Untitled
Abstract: No abstract text available
Text: Integrated Device Technology, Inc. BiCMOS HIGH-SPEED STATIC RAM 64K 8K x 8-BIT ADVANCE INFORMATION IDT71B64 FEATURES: DESCRIPTION: • 8192-words x 8-bits organization • JEDEC standard 28-pin DIP, SOJ, and 32-pin LCC « Fast access time: — Commercial: 10/12/15ns (max.)
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IDT71B64
8192-words
28-pin
32-pin
10/12/15ns
12/15/20ns
MIL-STD-883,
IDT71B64
536-bit
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static ram 8K
Abstract: No abstract text available
Text: ADVANCE INFORMATION IDT 7169S IDT 7169L C M O S HIGH-SPEED STATIC RAM 8K x 9-BIT FEATURES: DESCRIPTION: • 8192-words x 9-bits organization The IDT7169 is a 73728-blt high-speed static RAM organized as 8K x 9. It Is fabricated using IDT’s high-performance, high reliability
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7169S
7169L
8192-words
28-pin
MIL-STD-883,
IDT7169
73728-blt
P28-1
D28-1
static ram 8K
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74L47
Abstract: a1208 transistor 74L03 sn76131 MC526L eh12a MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR tg321 PJ 909 inverter LS600
Text: $4*-5 The Integrated Circuits Catalog for Design Engineers First Edition T e x a s In s t r u m e n t s INCORPORATED CC-401 10072-41-US Printed in U.S.A. G ENERAL IN FO R M A TIO N INDEXES Numerical • Functional • Cross-Reference DISCRETE SEMICONDUCTORS A N D COMPONENTS
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CC-401
10072-41-US
54S/74S
74L47
a1208 transistor
74L03
sn76131
MC526L
eh12a
MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
tg321
PJ 909
inverter LS600
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Untitled
Abstract: No abstract text available
Text: Ami 0P88/Am100P88 65,536-Bit 8 1 9 2 x 8 ECL Bipolar PROM ADVANCE INFORMATION • • Fast Access time (12 ns typ.) — improves system cycle times Power dissipation decreases with increasing tempera ture • Internally voltage compensated providing flat AC perfor
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0P88/Am100P88
536-Bit
10P88/Am
100P88
Am10P88
Am100P88
8192-words
WF021630
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Untitled
Abstract: No abstract text available
Text: Integrated Device Technology, Inc. BiCMOS HIGH-SPEED STATIC RAM 72K 8K x 9-BIT ADVANCE INFORMATION IDT71B69 FEATURES: DESCRIPTION: • 8192-words x 9-bits organization • Fast access time: — Commercial: 12/15/20ns — Military: 15/20ns • Produced with advanced BiCEMOS high-performance
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IDT71B69
8192-words
12/15/20ns
15/20ns
28-pin
32-pin
IDT71B69
728-bit
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PDF
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Untitled
Abstract: No abstract text available
Text: ADV NICRO {MEHORY} Tb D eT| 0 2 S 7 52 Ô 002SÖ71 Q J " T - % - l5 : 2 5 Am10P88/Am100P88 65,536-Bit 8 1 9 2 x 8 ECL Bipolar PROM ADVANCE INFORMATION • • Fast Access time (12 ns typ.) — improves system cycle times Power dissipation decreases with Increasing tempera
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Am10P88/Am100P88
536-Bit
Am10P88
Am100P88
8192-words
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RSN 3306 H
Abstract: ITT RZ2 g6 TDA 8841 IC rsn 3404 SN76670 4L71 bu 2508 af equivalent MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR sn76131 a1208 transistor
Text: G ENERAL IN FO R M A TIO N INDEXES Numerical • Functional • Cross-Reference DISCRETE SEMICONDUCTORS A N D COMPONENTS O R D ER IN G INSTRUCTIO NS A N D M EC HA NICA L D ATA MACH IV PROCUREMENT SPECIFICATION L IN EA R CIRCUITS ECL CIRCUITS SERIES 54S/74S CIRCUITS
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54S/74S
RSN 3306 H
ITT RZ2 g6
TDA 8841 IC
rsn 3404
SN76670
4L71
bu 2508 af equivalent
MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
sn76131
a1208 transistor
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PDF
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Untitled
Abstract: No abstract text available
Text: gstx \}dt Integrated Device Technology, Inc. CM O S HIGH-SPEED STATIC RAM 72K 8K x 9-BIT) PRELIMINARY INFORMATION IDT71569 With Address Latches FEATURES: DESCRIPTION: • 8192-words x 9-bits organization • Address Latch • Fast access time: — Commercial: 20/25ns
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IDT71569
8192-words
20/25ns
25/35ns
MIL-STD-883,
28-pin
IDT71569
728-bit
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PDF
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TMS4400JC
Abstract: tms 980 tms4400 tms 470 980
Text: MOS LSI TMS 4400 JC. TM S 4400 NC 4096-B IT STATIC READ ONLY MEMORY features • 4096-bit capacity • Static operation • Access time less than 1 microsecond typical • Two organizations available • Open-drain output buffers or double-ended buffers
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4096-BIT
24-pin
24-pi1
TMS4400JC
tms 980
tms4400
tms 470 980
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PDF
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Untitled
Abstract: No abstract text available
Text: Integrated Device Technology, Inc. CMOS HIGH-SPEED STATIC RAM 72K 8K X 9-BIT ADVANCE INFORMATION IDT7169S IDT7169L FEATURES: DESCRIPTION: • 8192-words x 9-bits organization • JEDEC standard 28-pin DIP, SOJ, and 32-Pin LCC • Fast access time: — Commercial: 20/25/35ns (max.)
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IDT7169S
IDT7169L
8192-words
28-pin
32-Pin
20/25/35ns
25/35/45/55ns
MIL-STD-883,
IDT7169
728-bit
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PDF
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tms 2300
Abstract: HIC037 transistor bf 175
Text: TMS4020NC • Mechanical data and pin alignments Add the following data: The TM S 40 20 NC is also available in a 22 pin dual-in line package w ith 400-m il spacing between leads. The pin assignments are as shown. FUNCTION PIN NO. FUNCTIC 1 2 3 4 5 6 Ag Ag
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TMS4020NC
400-m
TIH101
tms 2300
HIC037
transistor bf 175
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signetics 27c64
Abstract: 27C64A 27C64A-25 27C64A SIGNETICS 2764 64k uv erasable prom 27C84 signetics 27c64a 27C64A/BXA-20 eprom 27c64 PROGRAMMER CIRCUIT intelligent 2764
Text: NAPC/ SIGN ETIC S/MILITAR Y Signetics abE D • tbSa^at Ü O C m l S 1 ■ 27C64A 64K CMOS UV Erasable PROM 8K x 8 Product Specification Military Application Specific Products CERDIP PIN CONFIGURATION DESCRIPTION The Signetics 27C64A CMOS EPROM Is 64K-BK 5V only memory organized as
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27C64A
27C64A
64K-BK
200ns
27C84A,
signetics 27c64
27C64A-25
27C64A SIGNETICS
2764 64k uv erasable prom
27C84
signetics 27c64a
27C64A/BXA-20
eprom 27c64 PROGRAMMER CIRCUIT
intelligent 2764
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