cep4060al
Abstract: No abstract text available
Text: March 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES • 6 0 V , 15 A , R ds ON =80iti Q D @ V gs =10V. R ds(on)=85itiQ @ V gs =5.0V. • Super high dense cell design for extremely low Rds(on). • High power and current handling capability.
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85itiQ
O-220
O-263
to-263
to-220
CEP4060ALR/CEB4060ALR
cep4060al
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CEM9935
Abstract: No abstract text available
Text: CEM9935 M arch 19 9 8 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES • 2 0 V , 4 A , RDS ON =60m Q @ V g s = 4 .5 V . Di Rds(on)=80iti Q @ V gs= 2.5 V . Di O2 D2 • Super high dense cell design for extremely low R ds(on). • High power and current handing capability.
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CEM9935
80iti
yf-90%
CEM9935
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MECP01
Abstract: No abstract text available
Text: N-Channel Enhancement Mode Field Effect Transistor FEATURES • 6 0 V , 15 A , R ds on =80iti Q RDS(ON)=85mß @ V gs =1 0V. D @ V gs =5V. • Super high dense cell design for extremely low Rds(on). • High power and current handling capability. • TO-252 package.
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MECP01
O-252
to-252aa
MECP01
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