CEM9935A
Abstract: No abstract text available
Text: CEM9935A Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 5 20V, 6.0A, RDS ON = 36mΩ @VGS = 10V. RDS(ON) = 42mΩ @VGS = 4.5V. RDS(ON) = 75mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability.
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CEM9935A
CEM9935A
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CEM9935A
Abstract: No abstract text available
Text: CEM9935A Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 5 20V, 6.0A, RDS ON = 36mΩ @VGS = 10V. RDS(ON) = 42mΩ @VGS = 4.5V. RDS(ON) = 75mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability.
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CEM9935A
CEM9935A
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CEM9935A
Abstract: 5143 so8
Text: CEM9935A PRELIMINARY Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 5 20V , 5.4A , RDS ON =42mΩ @VGS=4.5V. RDS(ON)=75m Ω @VGS=2.5V. D1 D1 D2 D2 8 7 6 5 1 2 3 S1 G1 S2 Super high dense cell design for extremely low RDS(ON). High power and current handing capability.
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CEM9935A
CEM9935A
5143 so8
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CEP50N06
Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
Text: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223
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O-251/TO-252
O-220/TO-263
OT-23
OT-223
OT-89
2928-8J
O-220FM
CEP50N06
CEP83A3 equivalent
cep83a3
CEF02N6A
cep6355
FQPF8N60C equivalent
CEF04N6 equivalent
CEP63A3
CEP20N06
cep76139
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CEM9935
Abstract: No abstract text available
Text: CEM9935 M arch 19 9 8 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES • 2 0 V , 4 A , RDS ON =60m Q @ V g s = 4 .5 V . Di Rds(on)=80iti Q @ V gs= 2.5 V . Di O2 D2 • Super high dense cell design for extremely low R ds(on). • High power and current handing capability.
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OCR Scan
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CEM9935
80iti
yf-90%
CEM9935
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