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    3SK73

    Abstract: S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112
    Text: 高周波用半導体デバイス パワーデバイス編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製


    Original     		PDF 050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 3SK73 S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112

    Schalter

    Abstract: 3055 TO-3P 2N 3055 2N3055
    Text: Typ f Vcc Pin po ut ßVCBO BV c e O Gehäuse t'rpe _ 2N 5941 2N 5942 2M 5943 f~ rrin IV Hz 30 30 250 28 28 15 50 m A 40PEP 80PEP 7 dB 65 65 40 package 35 35 30 D IA-4L D IA-4L


    OCR Scan     		PDF 40PEP 80PEP OT-32 OT-32 O-66P Schalter 3055 TO-3P 2N 3055 2N3055

    transistor BD 246

    Abstract: transistor BD 240 B0239 mj 3055 npn BD239 TEXAS INSTRUMENTS BDX 625 transistor mj 3055 transistor bd 242 operation of BD 139 transistor bd 138
    Text: BD239, BD239A, BD239B, BD239C FOR POWER AM PLIFIER AN D HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH BD240A-C 30 W at 25 °C Case Temperature 2 A Rated Collector Current M in f T o f 3 MHz at 10 V , 200 mA mechanical data absolute maximum ratings at 25 °C case temperature unless otherwise noted


    OCR Scan     		PDF BD239, BD239A, BD239B, BD239C BD240A-C BD239 BD239A BD239B 40PEP transistor BD 246 transistor BD 240 B0239 mj 3055 npn BD239 TEXAS INSTRUMENTS BDX 625 transistor mj 3055 transistor bd 242 operation of BD 139 transistor bd 138

    TO-129

    Abstract: 2N4933 TO128 PACKAGE 2N5687 TO-128
    Text: Typ type f MHz Vcc P¡n Pout 2N 3137 T 2N 3309 2N 3375 250 50 250 400 20 50 25 28 0,1 2 0,4 1 0,4 15 2 3 2N 2N 2N 2N 3553 3632 3733 3866 175 175 400 400 28 28 28 28 0,25 3,5 4,0 0,1 2N 2N 2N 2N 3924 3926 3927 4040 175 175 175 400 13,6 13,6 13,6 28 2N 2N 2N


    OCR Scan     		PDF O-117 O-129 O-128 O-131 TO-129 2N4933 TO128 PACKAGE 2N5687 TO-128

    transistor BD 246

    Abstract: TIP 32 transistor transistor TIP 32 bd 244 TIP 31 Transistor TIP 29 transistor transistor BD245 BD240 BD240A BD240B
    Text: BD240, BD240A, BD240B, BD240C FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH BD239A-C 30 W at 25 °C Case Temperature 2 A Rated Collector Current Min f-j- of 3 MHz at 10 V , 200 mA mechanical data All d im en sion s a re in mm


    OCR Scan     		PDF BD240, BD240A, BD240B, BD240C BD239A-C BD240 BD240A BD240B -115V transistor BD 246 TIP 32 transistor transistor TIP 32 bd 244 TIP 31 Transistor TIP 29 transistor transistor BD245

    transistor BD 246

    Abstract: transistor BD 249 transistor BD 240 BD 35 transistor transistor bd 242 BD139-6 transistor BD 239 transistor BD245 BD135 transistor BD 241
    Text: BDI 36 PNP EPITAXIAL PLANAR SILICON TRANSISTOR 1171 DESIGNED FOR COMPLEMENTARY USE WITH BD135 • • • • • • • Driver Stages Active Convergence Control Circuits Switching Application Ptot * 6.5 Wat TC * 60 <>c hpE > 40 at lc = —150 mA Vce sat < 0.5 V at lc “ - 0.5 A


    OCR Scan     		PDF BD136 BD135 MIL-STD-750. OT-32 40PEP 80PEP OT-32 O-66P transistor BD 246 transistor BD 249 transistor BD 240 BD 35 transistor transistor bd 242 BD139-6 transistor BD 239 transistor BD245 BD135 transistor BD 241

    transistor BD 246

    Abstract: transistor BD 135 transistor bd 242 BD135 switch BD139 BD139-6 transistor BD transistor BD 246 b transistor BD 249 bd135 texas instruments
    Text: BD135 NPN EPITAXIAL PLANAR SILICON TRANSISTOR 1171 DESIGNED FOR COMPLEMENTARY USE WITH BD136 • • • • Driver Stages Active Convergence Control Circuits Switching Application • • • Ptot = 6.5 W at T c = 60 °C hpE > 40 at lc = 150 mA VcE satl < 0.5 V at lc = 0.5 A


    OCR Scan     		PDF BD135 BD136 STD-750. OT-32 40PEP 80PEP OT-32 O-66P transistor BD 246 transistor BD 135 transistor bd 242 BD135 switch BD139 BD139-6 transistor BD transistor BD 246 b transistor BD 249 bd135 texas instruments

    LA 4440 IC

    Abstract: LA 4127 IC LA 4127 2N5109 ic la 4440 t 3866 power transistor 2N3927 2N5687 2n5090 2N3375
    Text: 2N5109 SIL IC O N NPN VH F POWER T R A N SIST O R • • • • • Ideal for C A T V Applications Minimum Gain-Bandwidth Product 1.2 GHz 11 dB at 200 MHz Low Distortion Low Noise mechanical data Collector-Base V o lt a g e . 40 V


    OCR Scan     		PDF 2N5109 LINEARIT20 O-117 O-128 O-131 O-129 LA 4440 IC LA 4127 IC LA 4127 2N5109 ic la 4440 t 3866 power transistor 2N3927 2N5687 2n5090 2N3375

    TO128 PACKAGE

    Abstract: la 4127 t 3866 power transistor LA 4440 IC 2n4127 2n5102 2N4040 2N4041 2N5711 2n4428
    Text: 2N5708 SIL IC O N NPN VH F POWER T R A N S IST O R mechanical specification absolute maximum ratings Tease = 25 °C Collector-Base V o lt a g e . 70 V


    OCR Scan     		PDF 2N5708 O-128 O-128 O-117 O-131 O-129 TO128 PACKAGE la 4127 t 3866 power transistor LA 4440 IC 2n4127 2n5102 2N4040 2N4041 2N5711 2n4428

    t 3866 power transistor

    Abstract: TIC 136 Transistor 2N5016 2n5102 2N5026 ic 4440 2N4127 TO128 PACKAGE 2N5709 2N4040
    Text: 2N5709 SIL IC O N NPIM V H F POWER T R A N SIST O R 873 80 W PEP SIN G L E S ID E B A N D T R A N SIS T O R mechanical specification D IA 4 L absolute maximum ratings T Ca s e = 25 °C Collector-Base V o l t a g e . 7 0 V


    OCR Scan     		PDF 2N5709 O-117 O-128 O-131 O-129 20PEP t 3866 power transistor TIC 136 Transistor 2N5016 2n5102 2N5026 ic 4440 2N4127 TO128 PACKAGE 2N5709 2N4040

    JE1100

    Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
    Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices


    OCR Scan     		PDF

    transistor BD245

    Abstract: TIP 48 transistor TIP 32 transistor transistor TIP 32 npn transistor bd243c TIP 34 pnp BD242 BD242A BD242B TO-3P
    Text: B0242, BD242A, BD242B, B0242C FOB P O W E R -A M P L IFIE R A N D H IG H -S P EE D -S W ITC H IN G A P P L IC A TIO N S D E S IG N E D FOR C O M P L E M E N T A R Y USE W IT H BD241A-C 40 W at 25 °C Case Temperature 3 A Rated Collector Current M in f t o f 3 M H z at 10 V , 500 mA


    OCR Scan     		PDF BD242, BD242A, BD242B, BD242C BD241A-C BD242 BD242A BD242B 40PEP 80PEP transistor BD245 TIP 48 transistor TIP 32 transistor transistor TIP 32 npn transistor bd243c TIP 34 pnp BD242B TO-3P

    BDX 241

    Abstract: TRANSISTOR 246 transistor BD 240 transistor BD 246 TRANSISTOR Bd 137 BD139-6 transistor BD 249 transistor bd 242 transistor BD245 BD137
    Text: BDI 37 NPflM EPITAXIAL PLANAR SILICON TRANSISTOR 117 1 D E S I G N E D F O R C O M P L E M E N T A R Y U S E W ITH B D 138 • Driver Stages • A ctive Convergence • C ontrol Circuits • Sw itching Application • Ptot = 6.5 W at T c = 60 ° C • hFE > 40 at lc = 150 m A


    OCR Scan     		PDF BD137 BD138 MIL-STD-750. OT-32 OT-32 40PEP 80PEP BDX 241 TRANSISTOR 246 transistor BD 240 transistor BD 246 TRANSISTOR Bd 137 BD139-6 transistor BD 249 transistor bd 242 transistor BD245 BD137

    t 3866 power transistor

    Abstract: transistor 571 transistor 3866 s transistor d 5702 e d 5703 t 3866 transistor transistor 2N 5688 2N3553 transistor t 3866 3866 transistor 2n RF transistor
    Text: 2N3553 SILICON NPN VHF POWER TRANSISTOR 571 HIGH GAIN DRIVE R FOR 28 V FM APPLICATIONS • • 2.5 W a t 175 MHz Minimum Gain 10 dB mechanical data • • - 6 , 6 - » -12,7 mm - -


    OCR Scan     		PDF 2N3553 O-117 O-128 O-131 O-129 20PEP t 3866 power transistor transistor 571 transistor 3866 s transistor d 5702 e d 5703 t 3866 transistor transistor 2N 5688 2N3553 transistor t 3866 3866 transistor 2n RF transistor

    tip 420 transistor

    Abstract: BD246 TEXAS INSTRUMENTS transistor BD246 transistor tip 420 BD246 transistor BD 246 b TIP 34 pnp BD245A.C tip npn transistor BD 246
    Text: BD246, BD246A, BD246B, BD246C FOR P O W E R -A M P L IFIE R A N D H IG H -S P EE D -S W ITC H IN G A P P L IC A TIO N S D E SIG N E D FOR C O M P L E M E N T A R Y USE W IT H BD245A-C 80 W at 25 °C Case Temperature 10 A Rated Collector Current Min f T o f 3 M H z at 10 V , 500 mA


    OCR Scan     		PDF BD246, BD246A, BD246B, BD246C BD245A-C BD246 BD246A BD246B 40PEP 80PEP tip 420 transistor BD246 TEXAS INSTRUMENTS transistor BD246 transistor tip 420 transistor BD 246 b TIP 34 pnp BD245A.C tip npn transistor BD 246

    transistor tip 3055

    Abstract: Tip 3054 BD243A..C transistor BD 240 BD 139 transistor TIP 50 transistor BD249 TIP 3055 transistor transistor bd 139 BD 245
    Text: BD244, BD244A, BD244B, BD244C FOR POWER A M P L IF IE R A N D H IG H -S P EE D -S W ITC H IN G A P P L IC A TIO N S D E S IG N E D FOR C O M P L E M E N T A R Y USE W IT H BD243A-C 65 W at 2 5 ° C Case Temperature 6 A Rated Collector Current M in f T of 3 M H z at 10 V , 5 0 0 mA


    OCR Scan     		PDF BD244, BD244A, BD244B, BD244C BD243A-C BD244 BD244A BD244B 40PEP 80PEP transistor tip 3055 Tip 3054 BD243A..C transistor BD 240 BD 139 transistor TIP 50 transistor BD249 TIP 3055 transistor transistor bd 139 BD 245

    BD249 TEXAS INSTRUMENTS

    Abstract: BD149 BD249C TEXAS INSTRUMENTS B0249C bd249 B0249A 3055 5C pnp transistor B0249 BD149A BD249A
    Text: BD249, BD249A, BD249B, BD249C FOR POW ER-AM PLIFIER AND HIGH-SPEED-SWITCHING APPLICATIO N S DESIGN ED FOR CO M PLEM EN TARY USE WITH BD250A-C 125 W at 25 ° C Case Temperature 25 A Rated Collector Current Min fT of 3 MHz at 10 V, 1 A mechanical data TO-3P


    OCR Scan     		PDF BD249, BD249A, BD249B, BD249C BD250A-C BD249 BD149A BD249B 40PEP BD249 TEXAS INSTRUMENTS BD149 BD249C TEXAS INSTRUMENTS B0249C B0249A 3055 5C pnp transistor B0249 BD249A

    t 3866 power transistor

    Abstract: transistor 3866 s transistor d 5702 e d 5703 transistor t 3866 t 3866 transistor 2N3866 3866 transistor transistor 3866 2N3866 RF output Design 5698 transistor
    Text: 2N3866 SIL IC O N NPN V H F POWER T R A N S IST O R V H F /U H F M E D IU M POW ER A M P L IF IE R • • 1 W at 400 MHz with 10 dB Gain Distributed Construction mechanical specification All d im e n s io n s a re in rnm TO-39 absolute maximum ratings Tease = 25 °C


    OCR Scan     		PDF 2N3866 O-117 O-128 O-131 O-129 20PEP t 3866 power transistor transistor 3866 s transistor d 5702 e d 5703 transistor t 3866 t 3866 transistor 2N3866 3866 transistor transistor 3866 2N3866 RF output Design 5698 transistor

    B0241A

    Abstract: TIP 32 transistor transistor TIP 32 TIP 35 transistor BDX 241 transistor BD 246 80241A Tip 32 BD241 BD241B
    Text: BD241, BD241A, BD241B, BD241C FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE W ITH BD242A-C 40 W at 25 °C Case Temperature 3 A Rated Collector Current Min fT of 3 MHz at 10 V , 500 mA mechanical data absolute maximum ratings at 25 °C case temperature unless otherwise noted


    OCR Scan     		PDF BD241, BD241A, BD241B, BD241C BD242A-C BD241 BD241A BD241B 40PEP B0241A TIP 32 transistor transistor TIP 32 TIP 35 transistor BDX 241 transistor BD 246 80241A Tip 32

    transistor bd 139

    Abstract: transistor BD 140 transistor bd 242 transistor bd 138 BD139 transistor BD 240 transistor BD 246 BD 139 140 TRANSISTOR BD 137 transistor BD245
    Text: BD138 PNP E P IT A X IA L P L A N A R S IL IC O N TR A N S IS TO R 1 1 7 1 D ESIGN ED FO R CO M PLEM EN TARY USE WITH BD137


    OCR Scan     		PDF BD138 BD137 MIL-STD-750. OT-32 OT-32 40PEP 80PEP transistor bd 139 transistor BD 140 transistor bd 242 transistor bd 138 BD139 transistor BD 240 transistor BD 246 BD 139 140 TRANSISTOR BD 137 transistor BD245

    bd 3055

    Abstract: BD 139 140 BD NPN transistors BDX 241 BD139-6 2N3055 BD139 3055 npn BD 139 N to128
    Text: Typ type f MHz vcc 2N 2N 2N 2N 150 400 400 50 13 28 26 12,5 5713 5773 5774 5848 Pout bvcbo bvceo Gehause package 3,4 0,12 1 3,25 11 1,5 8 20 60 65 65 48 40 35 35 24 TO-128 TO-117 TO-129 145 v CEO mm V 'CD max A mm hpE max 45 60 80 1 1 1 40 40 40 250 160 160


    OCR Scan     		PDF O-128 O-117 O-129 40PEP 80PEP OT-32 OT-32 O-66P bd 3055 BD 139 140 BD NPN transistors BDX 241 BD139-6 2N3055 BD139 3055 npn BD 139 N to128

    BD139

    Abstract: transistor BD 139 BD 139 transistor BD139-6 BD 139 N BD 139-16 transistor bd 242 bd 3055 BD139 amplifier BD NPN transistors
    Text: BD 139 NPIM-EPITAXIAL-PLANAR-SILICON-TRANSISTOR • • • • • Driver fo r Audio A m plifier Active Convergenz Regulators Power Switching Pt o t = 6.5 W at T g = 60 oc • hFE > 40 at !C = - 1 5 0 mA • VcE sat < - 0 .5 V at lc = - 0 .5 A mechanical data


    OCR Scan     		PDF BD139 40PEP 80PEP OT-32 OT-32 O-66P BD139 transistor BD 139 BD 139 transistor BD139-6 BD 139 N BD 139-16 transistor bd 242 bd 3055 BD139 amplifier BD NPN transistors

    2N5942

    Abstract: transistor t04 66 transistor T04 T04 transistor S-40W T04 transistor SOT 3p transistor transistor 2N 3055 power transistor 3055 transistor 3055
    Text: 2N5942 SILICON NPN VHF POWER TRANSISTOR 80 W P.E.P. S IN G L E S ID E B O A R D T R A N S IS TO R mechanical data DIA 4 L absolute maximum ratings Tease = 25 °C Collector-Base V o lt a g e .65 V


    OCR Scan     		PDF 2N5942 40PEP 80PEP OT-32 OT-32 O-66P 2N5942 transistor t04 66 transistor T04 T04 transistor S-40W T04 transistor SOT 3p transistor transistor 2N 3055 power transistor 3055 transistor 3055

    BD 139 transistor

    Abstract: BD 140 transistor bd 3055 transistor BD 140 transistor bd 242 BD139-6 TRANSISTOR Bd 137 transistor BD 249 transistor BD 139 BD140
    Text: BD140 PNP E P IT A X IA L - P L A N A R - S IL IC O N - T R A N S IS T O R • • • • • • • Driver for Audio Amplifier Active Convergenz Regulators Power Switching Ptot = 6.5 W at T q * 60 °C hpE > 40 at lc = 150 mA VcE sat < 0-5 V at lc = 0.5 A


    OCR Scan     		PDF BD140 sot-32 40PEP 80PEP OT-32 OT-32 O-66P BD 139 transistor BD 140 transistor bd 3055 transistor BD 140 transistor bd 242 BD139-6 TRANSISTOR Bd 137 transistor BD 249 transistor BD 139 BD140