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    800-256 PLASTIC Search Results

    800-256 PLASTIC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TP80C31BH-1 Rochester Electronics LLC 80C31 - Microcontroller, 8-Bit, CMOS, PDIP Visit Rochester Electronics LLC Buy
    9513APC-G Rochester Electronics LLC 9513A - Rochester Manufactured 9513, System Timing Controller, 44 PLCC Package, Commercial Temp spec. Visit Rochester Electronics LLC Buy
    U77A1110800BP Amphenol Communications Solutions PLASTIC DUST COVER Visit Amphenol Communications Solutions
    U77A11108000P Amphenol Communications Solutions PLASTIC DUST COVER Visit Amphenol Communications Solutions
    86303714LF Amphenol Communications Solutions 86303714LF-DSUB PLASTIC BRACKET Visit Amphenol Communications Solutions

    800-256 PLASTIC Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    PC100-322-620

    Abstract: PC-100-322-620 PC133-333-520 PC100-222-620 P-TSOPII-54 39S256400AT-8A SMD MARKING CODE t15
    Text: HYB 39S256400/800/160AT 256-MBit Synchronous DRAM 256-MBit Synchronous DRAM Preliminary Datasheet • Multiple Burst Read with Single Write Operation • High Performance: • Automatic and Controlled Precharge Command -7.5 -8 -8A -8B Units fCK 133 125 125


    Original     		39S256400/800/160AT 256-MBit SPT03933 PC100-322-620 PC-100-322-620 PC133-333-520 PC100-222-620 P-TSOPII-54 39S256400AT-8A SMD MARKING CODE t15 PDF

    Untitled

    Abstract: No abstract text available
    Text: HYB 39S256400/800/160AT 256-MBit Synchronous DRAM 256-MBit Synchronous DRAM Preliminary Information • Multiple Burst Read with Single Write Operation • High Performance: • Automatic and Controlled Precharge Command -7.5 -8 -8A -8B Units fCK 133 125 125


    Original     		39S256400/800/160AT 256-MBit P-TSOPII-54 400mil PC133 PC100 SPT03933 PDF

    39S256160T

    Abstract: PC100-322-620 MARKING AX5 SMD MARKING T20
    Text: HYB 39S256400/800/160T 256-MBit Synchronous DRAM 256-MBit Synchronous DRAM • Multiple Burst Read with Single Write Operation • High Performance: • Automatic and Controlled Precharge Command -7.5 -8 -8A -8B Units fCK 133 125 125 100 MHz tCK3 7.5 8 8 10


    Original     		39S256400/800/160T 256-MBit SPT03933 39S256160T PC100-322-620 MARKING AX5 SMD MARKING T20 PDF

    tube az1

    Abstract: smd CAY smd marking T22 smd transistor at t21 PC100-322-620 MARKING AX5 by1 SMD marking RBY transistor smd marking mx transistor SMD t15
    Text: HYB 39S256400/800/160T 256-MBit Synchronous DRAM 256-MBit Synchronous DRAM • Multiple Burst Read with Single Write Operation • High Performance: • Automatic and Controlled Precharge Command -7.5 -8 -8A -8B Units fCK 133 125 125 100 MHz tCK3 7.5 8 8 10


    Original     		39S256400/800/160T 256-MBit SPT03933 tube az1 smd CAY smd marking T22 smd transistor at t21 PC100-322-620 MARKING AX5 by1 SMD marking RBY transistor smd marking mx transistor SMD t15 PDF

    PC100-222-620

    Abstract: PC133-333-520 P-TSOPII-54 pc100-322-620 SMD MARKING CODE M3
    Text: HYB 39S256400/800/160AT 256-MBit Synchronous DRAM 256-MBit Synchronous DRAM • Multiple Burst Read with Single Write Operation • High Performance: • Automatic and Controlled Precharge Command -7.5 -8 -8A -8B Units fCK 133 125 125 100 MHz tCK3 7.5 8 8


    Original     		39S256400/800/160AT 256-MBit SPT03933 PC100-222-620 PC133-333-520 P-TSOPII-54 pc100-322-620 SMD MARKING CODE M3 PDF

    Ps3 MOTHERBOARD CIRCUIT diagram

    Abstract: PS3 computer motherboard circuit diagram NL6448AC33-24 hosiden DC motor 12V cx5530 NEC lcd backlight nl6448ac33-24 cx5530 cyrix PS3 slim motherboard fanuc crt connector FANUC crt
    Text: VMIOMAX-8450 Industrial Automation PC-Based Controller System Product Manual 256 880-0444 w 12090 South Memorial Parkway Huntsville, Alabama 35803-3308, USA (800) 322-3616 w Fax: (256) 882-0859 500-318450-000 Rev. C COPYRIGHT AND TRADEMARKS Copyright February 2002. The information in this document has been carefully checked and is believed to be


    Original     		VMIOMAX-8450 IRQ15 PC/104 VMIOMAX-8450. VMIOMAX-8450 Ps3 MOTHERBOARD CIRCUIT diagram PS3 computer motherboard circuit diagram NL6448AC33-24 hosiden DC motor 12V cx5530 NEC lcd backlight nl6448ac33-24 cx5530 cyrix PS3 slim motherboard fanuc crt connector FANUC crt PDF

    39S256160DT-7

    Abstract: HYB 39S256160DT-7.5 PC100-222 PC133-222 P-TSOPII-54 P-TSOP-54-2
    Text: HYB39S256400/800/160DT L /DC(L) 256MBit Synchronous DRAM 256 MBit Synchronous DRAM • High Performance: -6 -7 -7.5 -8 Units • Data Mask for Read / Write control (x4, x8) • Data Mask for byte control (x16) • Auto Refresh (CBR) and Self Refresh fCK 166


    Original     		HYB39S256400/800/160DT 256MBit P-TSOPII-54 400mil P-TSOPII-54 GPX09039 TFBGA-54 39S256160DT-7 HYB 39S256160DT-7.5 PC100-222 PC133-222 P-TSOP-54-2 PDF

    TSOP66

    Abstract: HYB25D256 DDR400 infineon DDR200 DDR266 DDR266A DDR333 HYB25D256400BT HYB25D256800BT P-FBGA 169
    Text: HYB25D256[400/800/160]B[T/C] L 256-Mbit Double Data Rate SDRAM, Die Rev. B Data Sheet Jan. 2003, V1.1 Features CAS Latency and Frequency CAS Latency 2 2.5 Maximum Operating Frequency (MHz) DDR200 DDR266A DDR266 DDR333 -8 -7 -7F -6 100 133 133 133 125 143


    Original     		HYB25D256 256-Mbit DDR200 DDR266A DDR266 DDR333 TSOP66 DDR400 infineon DDR266 DDR333 HYB25D256400BT HYB25D256800BT P-FBGA 169 PDF

    Untitled

    Abstract: No abstract text available
    Text: HYB25D256400/800/160BT L /BC(L) 256-MBit Double Data Rata SDRAM Features CAS Latency and Frequency CAS Latency 2 2.5 Maximum Operating Frequency (MHz) DDR200 DDR266A DDR266F DDR333 -8 -7 -7F -6 100 133 133 133 125 143 143 166 • Double data rate architecture: two data transfers


    Original     		HYB25D256400/800/160BT 256-MBit DDR200 DDR266A DDR266F DDR333 PDF

    Untitled

    Abstract: No abstract text available
    Text: HYB25D256400/800/160BT L /BC(L) 256-MBit Double Data Rata SDRAM Preliminary Datasheet Rev. 2002-04-15 Features CAS Latency and Frequency CAS Latency 2 2.5 Maximum Operating Frequency (MHz) DDR200 DDR266A DDR333 -8 -7 -6 100 133 133 125 143 166 • Double data rate architecture: two data transfers


    Original     		HYB25D256400/800/160BT 256-MBit DDR200 DDR266A DDR333 PDF

    39S256160T

    Abstract: PC100-322-620 smd CAY PC100-322 P-TSOPII-54
    Text: HYB39S256400/800/160T 256MBit Synchronous DRAM 256 MBit Synchronous DRAM Preliminary Information • High Performance: -8 -8A -8B Units fCK 125 125 100 MHz tCK3 8 8 10 ns tAC3 6 6 6 ns tCK2 10 12 15 ns tAC2 6 6 7 ns • Fully Synchronous to Positive Clock Edge


    Original     		HYB39S256400/800/160T 256MBit P-TSOPII-54 400mil PC100 3-2T10 HYB39S256400/800/160AT 39S256160T PC100-322-620 smd CAY PC100-322 PDF

    P-TSOPII-54

    Abstract: PC133 registered reference design
    Text: HYB39S256400/800/160CT L 256MBit Synchronous DRAM 256 MBit Synchronous DRAM • High Performance: -7.5 -8 Units fCK 133 125 MHz tCK3 7.5 8 ns tAC3 5.4 6 ns tCK2 10 10 ns tAC2 6 6 ns • Fully Synchronous to Positive Clock Edge • 0 to 70 °C operating temperature


    Original     		HYB39S256400/800/160CT 256MBit P-TSOPII-54 400mil PC133 PC100 PC133 registered reference design PDF

    PC133 registered reference design

    Abstract: No abstract text available
    Text: HYB39S256400/800/160DT L 256MBit Synchronous DRAM 256 MBit Synchronous DRAM Preliminary Datasheet (Rev. 7/01) • High Performance: -6 -7 -7.5 -8 Units fCK 166 143 133 125 MHz tCK3 6 7 7.5 8 ns tAC3 5 5.4 5.4 6 ns tCK2 7.5 7.5 10 10 ns tAC2 5.4 5.4 6 6 ns


    Original     		HYB39S256400/800/160DT 256MBit P-TSOPII-54 400mil PC166 PC133 PC133 registered reference design PDF

    CAY smd marking code

    Abstract: smd marking T22 cbx smd code smd CAY 39S256800T-8 SMD MARKING T20 SMD MARKING T5 P-TSOPII-54 PC100-222-620 PC100-323-620
    Text: HYB 39S256400/800/160T 256 MBit Synchronous DRAM Preliminary Information • High Performance: • • • • -8 -8B -10 Units fCK 125 100 100 MHz tCK3 8 10 10 ns tAC3 6 6 7 ns tCK2 10 12 15 ns tAC2 6 7 8 ns • Multiple Burst Read with Single Write Operation


    Original     		39S256400/800/160T cycles/64 P-TSOPII-54 400mil SPT03933 CAY smd marking code smd marking T22 cbx smd code smd CAY 39S256800T-8 SMD MARKING T20 SMD MARKING T5 PC100-222-620 PC100-323-620 PDF

    MARKING CAW

    Abstract: P-TSOPII-54
    Text: HYB39S256400/800/160CT L 256MBit Synchronous DRAM 256 MBit Synchronous DRAM • High Performance: -7.5 -8 -8A Units fCK 133 125 125 MHz tCK3 7.5 8 8 ns tAC3 5.4 6 6 ns tCK2 10 10 12 ns tAC2 6 6 6 ns • Fully Synchronous to Positive Clock Edge • 0 to 70 °C operating temperature


    Original     		HYB39S256400/800/160CT 256MBit P-TSOPII-54 400mil PC133 PC100 SPT03933 MARKING CAW PDF

    PC100-322-620

    Abstract: P-TSOPII-54 PC133 registered reference design
    Text: HYB39S256400/800/160CT L 256MBit Synchronous DRAM 256 MBit Synchronous DRAM • High Performance: -7.5 -8 -8A Units fCK 133 125 125 MHz tCK3 7.5 8 8 ns tAC3 5.4 6 6 ns tCK2 10 10 12 ns tAC2 6 6 6 ns • Fully Synchronous to Positive Clock Edge • 0 to 70 °C operating temperature


    Original     		HYB39S256400/800/160CT 256MBit P-TSOPII-54 400mil PC133 PC100 PC100-322-620 PC133 registered reference design PDF

    PC100-322-620

    Abstract: Schneider NS 800 PC100-322 smd transistor marking ba smd transistor marking BA1 tcs Schneider P-TSOPII-54 PC133 registered reference design
    Text: HYB39S256400/800/160CT L 256MBit Synchronous DRAM 256 MBit Synchronous DRAM • High Performance: -7.5 -8 -8A Units fCK 133 125 125 MHz tCK3 7.5 8 8 ns tAC3 5.4 6 6 ns tCK2 10 10 12 ns tAC2 6 6 6 ns • Fully Synchronous to Positive Clock Edge • 0 to 70 °C operating temperature


    Original     		HYB39S256400/800/160CT 256MBit P-TSOPII-54 400mil PC133 PC100 SPT03910 SPT03923 PC100-322-620 Schneider NS 800 PC100-322 smd transistor marking ba smd transistor marking BA1 tcs Schneider PC133 registered reference design PDF

    VMIVME 4140

    Abstract: VMEbus Handbook MVME 322 VMIVME-4140 TS 4140 S2A00 MVME 2A00 2A01 S000
    Text: VMIVME-4140 32-Channel 12-bit Analog Output Board Product Manual 12090 South Memorial Parkway Huntsville. Alabama 35803-3308. USA A GE Fanuc C om pany 256 880-0444 ♦ (800)322-3616 ♦ Fax: (256) 882-0859 500-004140-000 Rev. D 12090 South Memoria! Parkway


    OCR Scan     		VMIVME-4140 32-Channel 12-bit VMIVME 4140 VMEbus Handbook MVME 322 TS 4140 S2A00 MVME 2A00 2A01 S000 PDF

    Untitled

    Abstract: No abstract text available
    Text: HYB39S256400/800/160T 256MBit Synchronous DRAM SIEMENS 256 MBit Synchronous DRAM Preliminary Information • High Performance: Multiple Burst Operation -8 -8B -10 Units fCK 125 100 100 MHz tCK3 8 10 10 ns tAC3 6 6 7 ns Automatic Command and Read with Single Write


    OCR Scan     		HYB39S256400/800/160T 256MBit PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 256 MBit Synchronous DRAM HYB 39S256400/800/160T Preliminary Information • High Performance: Multiple Burst Read with Single W rite Operation -8 -8B -10 Units 125 100 100 MHz fCK3 8 10 10 ns Data M ask for Read/W rite control fAC3 6 6 7 ns Data M ask for byte control


    OCR Scan     		39S256400/800/160T 0235b05 39S256400/80Q/160AT A53SbDS D1113G0 PDF

    Untitled

    Abstract: No abstract text available
    Text: # H YB39S256400/800/160T 256MBit Synchronous DRAM In fin eon 256 MBit Synchronous DRAM Preliminary Information • High Performance: Multiple Burst Operation -8 -8A -8B Units fC K 125 125 100 M Hz tC K 3 8 8 10 ns tA C 3 6 6 6 ns tC K 2 10 12 15 ns tA C 2


    OCR Scan     		YB39S256400/800/160T 256MBit PDF

    A5169

    Abstract: BF256 BF256C BF 256 BF256B BF256A
    Text: asc D • fl235bG5 GÜ0MM7Ü 5 H S I E 6 N-Channel Junction Field-Effect Transistors SIEMENS AKTIEN6ESELLSCHAF .04470 ' "d " T-Z/-JS’ BF 256 A BF 256 B BF 256 C BF 256 A, B, and C are N-channel junction field-effect transistors in plastic package similar to TO 92 10 A 3 DIN 41868 . They are particularly suitable for RF applications.


    OCR Scan     		fl235bG5 8000-A Q62702-F413 68000-A5169 Q62702-F733 23SbOS QGQ4472 A5169 BF256 BF256C BF 256 BF256B BF256A PDF

    BF 256

    Abstract: BF256 BF266 A5169 BF256C BF256B F256C f733 A5168 BF56
    Text: ¿si 1 asc t> m aaastos ooq44?g s bisieû v T^-zhJS’ N-Channel Junction Field-Effect Transistors SIEMENS AKTIEN6ESELLSCHAF 04470 BF 256 A BF 256 B ' ~o-BF 256 C BF 256 A, B, and C are N-channel junction field-effect transistors in plastic package


    OCR Scan     		00Q447G Q68000-A5168 Q62702-F413 Q68000-A5169 Q62702-F733 BF 256 BF256 BF266 A5169 BF256C BF256B F256C f733 A5168 BF56 PDF

    746861-2

    Abstract: No abstract text available
    Text: Interconnection Systems Selection Guide 8 2 7 5 0 Subminiature D Connectors AMPLIMITE Revised 7-95 Hardware Commoning Strip (for H DF-20 Plugs, Size 20 Pin Contacts) HDF-20 Metal-Shell or Alt Plastic Plug (Shown for Ref. only) Pin and Socket Connectors Subminiatura 0 Connectors (AMPLIMITE)


    OCR Scan     		DF-20 HDF-20 746861-2 PDF