HC1-5504DLC-5
Abstract: HC1-5504DLC-9 HC3-5504DLC-5 HC3-5504DLC-9 HC4P5504DLC-5 HC4P5504DLC-9 HC-5504 HC-5504DLC HC9P5504DLC-5 HC9P5504DLC-9
Text: NS DESIG W E N R ED F O 4B1 MEND HC550rt Center at M O d n C a E R B o 4 T p 55 NO S up m/tsc See HCr Technical rsil.co te n u .i o t w tac or w w or c on TERSIL N -I 8 8 1-8 May 1997 HC-5504DLC SLIC Subscriber Line Interface Circuit Features Description
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5504B
1-888-I
HC-5504DLC
HC-5504
50msec.
HC-550X
HC1-5504DLC-5
HC1-5504DLC-9
HC3-5504DLC-5
HC3-5504DLC-9
HC4P5504DLC-5
HC4P5504DLC-9
HC-5504
HC-5504DLC
HC9P5504DLC-5
HC9P5504DLC-9
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IR2110 application note
Abstract: IR2101 full bridge IR2113 APPLICATION NOTE h bridge ir2110 full bridge ir2110 Full-bridge IR2110 IR2112 application note IR2104 APPLICATION NOTE h bridge ir2113 ballast Self-Oscillating
Text: International Rectifier Control IC Navigator Function Features Voltage Offset 8 Lead DIP 14 Lead DIP 14 Lead DIP w/o leads 4 & 5 16 Lead DIP w/o leads 4 & 5 28 Lead DIP 9 Pin SIP w/o leads 5&7 8 Lead SOIC Narrow Body Basic 600 IR2117 G IR2118 (G) IR2117S (G)
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IR2117
IR2118
IR2117S
IR2118S
IR2127
IR2128
IR2127S
IR2128S
IR2121
IR2125
IR2110 application note
IR2101 full bridge
IR2113 APPLICATION NOTE
h bridge ir2110
full bridge ir2110
Full-bridge IR2110
IR2112 application note
IR2104 APPLICATION NOTE
h bridge ir2113
ballast Self-Oscillating
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1538-08
Abstract: No abstract text available
Text: /T T SGS-THOMSON ^ 7 # S D 1 5 3 8 -0 8 RF & MICROWAVE TRANSISTO RS _ AVIONICS APPLICATIONS • DESIGNED FOR HIGH POWER PULSE IFF, DME, AND TACAN APPLICATIONS ■ 200 W typ. IFF 1030 - 1090 MHz ■ 150 W (min.) DME 1025 - 1150 MHz
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SD1538-08
1538-08
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Motorola transistors MRF3104
Abstract: MRF3104 MRF3105 MRF3106
Text: MOTOROLA The RF Line MRF3104 MRF3105 MRF3106 Microwave Linear Power Transistors • Designed for Class A, Common Emitter Linear Power Amplifiers. • Specified 20 Volt, 1.6 GHz Characteristics: MRF3104 MRF3105 MRF3106 0.5 W 10.5 dB 0.8 W 9 dB 1.6 W 8 dB Output Power
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MRF3104
MRF3105
MRF3106
MRF3104
MRF3105
MRF3104/D
Motorola transistors MRF3104
MRF3106
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TA7921
Abstract: 150 watt hf transistor 12 volt rca 632 2N5993 rca transistor RCA rf power transistor 452 transistor 225/TA7921
Text: File No. 452 0UQB//D ^ow er Transistors Solid State Division 2N5993 18-W CW 8 8 -M H z E m itterBallasted Overlay Transistor Silicon N -P-N T ype for 12.5-Volt Applications in V H F Com m unications Equipm ent Features: • ■ ■ ■ ■ Emitter-ballasting resistors
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2N5993
88-MHz
SS-jV63RJ
2N5993
TA7921
150 watt hf transistor 12 volt
rca 632
rca transistor
RCA rf power transistor
452 transistor
225/TA7921
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dimmable Fluorescent BALLAST
Abstract: dali power supply circuit diagram Fluorescent BALLAST IXI859S1 charge pump mosfet driver external ic driver mosfet for BLDC motor IXI858 dimmable HID BALLAST Depletion MOSFET hid ballast diagram
Text: I X I 8 5 8 / I X I 8 5 9 R E G U L AT O R / G AT E D R I V E R - N E W P R O D U C T B R I E F N E W P R O D U C T B R I E F Pin Description Component Pin Layout IXI858/IXI859 Regulator/Gate Driver INTERFACE IC PROVIDING ANALOG FUNCTIONS FOR MICROCONTROLLER IMPLEMENTATION
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IXI858/IXI859
IXI858S1
IXI859S1
IXI858
IXI859
IXI858/859
120mA
220nF
IXI858/IXI859
dimmable Fluorescent BALLAST
dali power supply circuit diagram
Fluorescent BALLAST
IXI859S1
charge pump mosfet driver external
ic driver mosfet for BLDC motor
dimmable HID BALLAST
Depletion MOSFET
hid ballast diagram
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B20V1320B
Abstract: No abstract text available
Text: BIPOLARICS, INC Part Number B20V1320B SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: • High • Common Base Package Configuration Reliability Gold Metallization Nitride Passivation • High Output Power 8 W @ 1.0 GHz • Diffused Ballast Resistors
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B20V1320B
B20V1320B
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B30V1320B
Abstract: No abstract text available
Text: BIPOLARICS, INC Part Number B30V1320B SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: • High • Common Base Package Configuration Reliability Gold Metallization Nitride Passivation • High Output Power 8 W @ 1.0 GHz • Diffused Ballast Resistors
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B30V1320B
B30V1320B
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transistor 3l2
Abstract: 2N5994 Arco 403 118-136 mhz rca 381 transistor rca 632 RCA 431 transistor RCA Power Transistor 4 225
Text: File No. 453 RF Power Transistors Solid State Division 2N5994 15-W AM and 3 5 -W CW E m itter- Ballasted Overlay Transistor Silicon N-P-N Device fo r 12.5-V A M and 2 8 -V FM Am plifiers in V H F Communications Equipm ent Features: • In 12.5 V AM 118-136 MHz commercial aircraft
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2N5994
transistor 3l2
2N5994
Arco 403
118-136 mhz
rca 381 transistor
rca 632
RCA 431 transistor
RCA Power Transistor 4 225
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Untitled
Abstract: No abstract text available
Text: S G S -T H O M S O N S D 1 5 2 8 -0 6 m RF & MICROWAVE TRANSISTO RS AVIONICS APPLICATIONS DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS 20 W typ. IFF 1030 - 1090 MHz 15 W (min.) DME 1025 - 1150 MHz 15 W (typ.) TACAN 960 - 1215 MHz REFRACTORY GOLD METALLIZATION
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SD1528-06
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TA7920
Abstract: equivalent of SL 100 NPN Transistor 2N5992 BT 812 7w RF POWER TRANSISTOR NPN RCA rf power transistor RCA Power Transistor 4 225
Text: File No. 451 DUGBÆ I ^ Power T ransistors Solid State Division 2N5992 7-W A M ,6 6 -to -8 8 -M H z E m itte r-B a lla ste d S ilic o n N -P -N O verlay Transistor For 12.5-V Am plifiers in V H F Com m unications Equipm ent Features • • • • 7-W min. carrier output, 10-dB min. gain at 88 MHz
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2N5992
66-to-88-MHz
10-dB
2N5992
TA7920
equivalent of SL 100 NPN Transistor
BT 812
7w RF POWER TRANSISTOR NPN
RCA rf power transistor
RCA Power Transistor 4 225
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Untitled
Abstract: No abstract text available
Text: Panasonic S S ecwg iit it J lt S = Equipped with a Safety Mechanism= Metallized Polyester/Polypropylene Film Capacitor f /w x w w fs tfa y jv * Type Plastic Film Capacitors ECWG / ? 7 4 X K # >Ji X f ^ 7 4 IW A /# D 7 "n £ 1 ^ > 7 T > l'.A £ fflV » fc *S i§ 3 W *j& , * J I 5 t e i M B * - - X * 8 ,
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Untitled
Abstract: No abstract text available
Text: r z 7 S C S -T H O M S O N ^ • T /. m o e W iU K S W ffllg g A M 8 3 1 3 5 -0 0 1 RF & M I C R O W A V E T R A N S I S T O R S S -B A N D R A D A R A P P L I C A T I O N S . . . . . . . ■ REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 10:1 VSWR CAPABILITY
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AM83135-001
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Untitled
Abstract: No abstract text available
Text: [ Z J SGS-THOMSON * 7 w. RiflD g[S |[Li TIS©liaB(gi A M 8 0 9 1 2 -0 1 5 RF & MICROWAVE TRANSISTORS _ AVIONICS APPLICATIONS . REFRACTORY/GOLD METALLIZATION • EM ITTER SITE BALLASTED . 0 0 :1 VSWR CAPABILITY ■ LOW THERMAL RESISTANCE
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AM80912-015
00bSD3fl
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Visil
Abstract: n1475 ferraz Ferraz Shawmut FLU011
Text: 2 0 /0 4 0 4 /1 8 /0 0 '0 0 0 8 :3 6 0 1 9 1 4158189 1 6 : 2 7 TAX 8 4 7 » 9 1 0 7 5 3 LITTELFITSE SALES LITTELFUSE INT'L SALES 0002/002 l^OOZ -> XJf UK Midget Fuses Littetfuse' Supplementary Overcurrent Protection O *+ 1 + 0 O p o w r - g a r d “ products
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600VAC
44/1OC
44/100A:
FLU011
0FLU011J
4-4/100A:
i-800-TEC-FUSE
PFS26
Visil
n1475
ferraz
Ferraz Shawmut
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON :IL[i g?GMD § M S C 8 1 118 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS • EMITTER BALLASTED ■ VSWR CAPABILITY oo:1 @ RATED CONDITIONS . HERMETIC STRIPAC PACKAGE ■ P o u t = 2.0 W MIN. WITH 10 dB GAIN @ 1.0 GHz DESCRIPTION
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MSC81118
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SC81058
Abstract: SC8105
Text: SGS-THOMSON :IL[i g?GMD § M S C 8 1 058 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS • EMITTER BALLASTED ■ REFRACTORY/GOLD METALLIZATION ■ VSWR CAPABILITY oo:1 @ RATED CONDITIONS ■ HERMETIC STRIPAC PACKAGE . P out = 10 W MIN. WITH 10 dB GAIN
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MSC81058
SC81058
SC8105
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON :IL[i g?GMD § M S C 8 1 002 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS • EMITTER BALLASTED ■ VSWR CAPABILITY oo:1 @ RATED CONDITIONS . HERMETIC STRIPAC PACKAGE ■ P o u t = 2.0 W MIN. WITH 10 dB GAIN @ 1 GHz DESCRIPTION
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MSC81002
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1417-11
Abstract: MRA1417
Text: MO TO ROLA • SEMICONDUCTOR TECHNICAL DATA MRA1417 Series The RF Line M ic ro w a v e P o w er Transistors 7 to 8 dB 1.4-1.7 GHz 2 TO 25 WATTS BROADBAND MICROWAVE POWER TRANSISTORS . . . designed p rim a rily fo r w id e b a n d , large-signal o u tp u t and d riv e r a m p lifie r stages in
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MRA1417
1417-11
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rf ic 3358
Abstract: MRF248 VK200 ferrite choke VK200-20-4B
Text: M O T O R O L A SC -CXSTRS/R F> i 6 3 6 7 2 5 4 M O T O R O ÖT L A S C X S T R S / R F i>E | b 3 b 7 S S 4 8 9 D 7 8 8 D070flt,fl 1 6 8 D T - 3 3 | - 1 MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line MRF248 N P N S ilic o n R F P o w e r T r a n s isto r
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D070flt
007flfl7l
MRF248
rf ic 3358
VK200 ferrite choke
VK200-20-4B
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GP141
Abstract: MRW53102 GP-141 MRW53402 TRW53102
Text: MOTOROLA • SEM ICONDUCTOR TECHNICAL DATA M R W 53102 Series The RF Line M ic ro w a v e Linear P o w e r T ra n sisto rs 7 TO 8 dB 1 -3 GHz 1.6 WATTS MICROWAVE LINEAR POWER TRANSISTORS . . . desig n ed p rim a rily fo r large-signal o u tp u t and d rive r a m p lifie r stages in th e 1 to 3
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TRW53102
GP141
MRW53102
GP-141
MRW53402
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2SC2528
Abstract: No abstract text available
Text: _ _ _ ç p January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE: 2SC2528 Silicon High Speed Power Transistor DESCRIPTION T h e 2 S C 2 5 2 8 is a silicon N P N general purpose, m edium po w e r transistor fabricated w ith Fujitsu's u nique Ring E m itte r Transistor R E T technology. R E T devices are
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2SC2528
300ys
2SC2528
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TP5002
Abstract: TP5002S TPS002 TP500 1N4148 BD136
Text: MOT OROL A SC XSTRS/R F 4bE b3b7ES4 D 001524*1 3 «nO Tb MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP5002' TP5002S The RF Line UHF Linear Power Transistors 1.5 W — 3 8 0 t o 5 1 2 M H z U H F LIN E A R P O W E R T R A N S IS T O R S N P N S IU C O N The TP5002/S are NPN gold metallized transistors using diffused ballast resistors for
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b3b72S4
TPS002/S
TP5002
TP5002S
TPS002
TP500
1N4148
BD136
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acrian RF POWER TRANSISTOR
Abstract: transistor A 584 acrian inc ACRIAN acrian 2001 584 TRANSISTOR acrian ic acrian 1 20w50 acrian rf power
Text: O 1 8 2 9 9 8 . ACFjtlAN INC J97D ACRIAN INC ~T7 de 01406 r in ia e ooomoh □ ilKORIAN GENERAL 2005 D E S C R IP T IO N The 2005 is a common base transistor capable of providing 5 watts of C W RF output power at 2000 MHz. This hermetically sealed transistor is specifically designed
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125Woâ
acrian RF POWER TRANSISTOR
transistor A 584
acrian inc
ACRIAN
acrian 2001
584 TRANSISTOR
acrian ic
acrian 1
20w50
acrian rf power
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