CY14B101LA-SZ45XI
Abstract: CY14B101LA-SZ25XI
Text: CY14B101LA CY14B101NA 1-Mbit 128K x 8/64K x 16 nvSRAM 1-Mbit (128 K x 8/64 K x 16) nvSRAM Features Functional Description • 20 ns, 25 ns, and 45 ns access times ■ Internally organized as 128 K x 8 (CY14B101LA) or 64 K x 16 (CY14B101NA) ■ Hands off automatic STORE on power down with only a small
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CY14B101LA
CY14B101NA
8/64K
CY14B101LA/CY14B101NA
CY14B101LA-SZ45XI
CY14B101LA-SZ25XI
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CY14a101
Abstract: CY14V101LA-BA45 CY14A101L
Text: CY14V101LA CY14V101NA 1 Mbit 128 K x 8/64 K x 16 nvSRAM 1 Mbit (128K x 8/64K x 16) nvSRAM Features Functional Description • 25 ns and 45 ns access times ■ Internally organized as 128 K x 8 (CY14V101LA) or 64 K x 16 (CY14V101NA) ■ Hands off automatic STORE on power down with only a small
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CY14V101LA
CY14V101NA
8/64K
CY14V101LA/CY14V101NA
CY14a101
CY14V101LA-BA45
CY14A101L
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CY14a101
Abstract: CY14A101L
Text: CY14V101LA CY14V101NA 1 Mbit 128 K x 8/64 K x 16 nvSRAM 1 Mbit (128K x 8/64K x 16) nvSRAM Features Functional Description • 25 ns and 45 ns access times ■ Internally organized as 128 K x 8 (CY14V101LA) or 64 K x 16 (CY14V101NA) ■ Hands off automatic STORE on power down with only a small
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CY14V101LA
CY14V101NA
8/64K
CY14V101LA/CY14V101NA
CY14a101
CY14A101L
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M410000002
Abstract: DL161 DL162 DL163 AM41DL1644DT
Text: PRELIMINARY Am41DL16x4D Stacked Multi-Chip Package MCP Flash Memory and SRAM Am29DL16xD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS
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Am41DL16x4D
Am29DL16xD
16-Bit)
8-Bit/256
69-Ball
M410000002
DL161
DL162
DL163
AM41DL1644DT
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DS42514
Abstract: No abstract text available
Text: DS42514 Stacked Multi-Chip Package MCP Flash Memory and SRAM Am29DL163D Bottom Boot 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/ 256 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS
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DS42514
Am29DL163D
16-Bit)
69-Ball
DS42514
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DS42515
Abstract: No abstract text available
Text: DS42515 Stacked Multi-Chip Package MCP Flash Memory and SRAM Am29DL164D Bottom Boot 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/ 256 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS
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DS42515
Am29DL164D
16-Bit)
69-Ball
DS42515
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DS42546
Abstract: No abstract text available
Text: DS42546 Stacked Multi-Chip Package MCP Flash Memory and SRAM Am29DL163D Top Boot 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/ 256 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS
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DS42546
Am29DL163D
16-Bit)
69-Ball
DS42546
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Untitled
Abstract: No abstract text available
Text: CY14V104LA CY14V104NA 4-Mbit 512 K x 8 / 256 K x 16 nvSRAM Features Functional Description • 25 ns and 45 ns access times ■ Internally organized as 512 K x 8 (CY14V104LA) or 256 K x 16 (CY14V104NA) ■ Hands off automatic STORE on power down with only a small
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CY14V104LA
CY14V104NA
CY14V104LA/CY14V104NA
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CY14B101LA-SZ45XI
Abstract: CY14B101LA-SZ25XI
Text: CY14B101LA CY14B101NA 1-Mbit 128 K x 8/64 K x 16 nvSRAM 1-Mbit (128 K x 8/64 K x 16) nvSRAM Features • Packages ❐ 32-Pin small-outline integrated circuit (SOIC) ❐ 44-/54-Pin thin small outline package (TSOP-II) ❐ 48-Pin shrink small-outline package (SSOP)
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CY14B101LA
CY14B101NA
CY14B101LA)
CY14B101NA)
32-Pin
44-/54-Pin
48-Pin
CY14B101LA-SZ45XI
CY14B101LA-SZ25XI
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Untitled
Abstract: No abstract text available
Text: CY14B108K, CY14B108M 8 Mbit 1024 K x 8/512 K x 16 nvSRAM with Real Time Clock Features • Watchdog timer ■ 25 ns and 45 ns access times ■ Clock alarm with programmable interrupts ■ Internally organized as 1024 K x 8 (CY14B108K) or 512 K × 16 (CY14B108M)
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CY14B108K,
CY14B108M
54-pin
CY14B108K)
CY14B108M)
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DS42516
Abstract: No abstract text available
Text: DS42516 Stacked Multi-Chip Package MCP Flash Memory and SRAM Am29DL324D Bottom Boot 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/ 256 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS
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DS42516
Am29DL324D
16-Bit)
73-Ball
DS42516
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DL322
Abstract: DL323 DL324
Text: PRELIMINARY Am41DL32x4G Stacked Multi-Chip Package MCP Flash Memory and SRAM 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features
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Am41DL32x4G
16-Bit)
8-Bit/256
73-Ball
FLB073--73-Ball
DL322
DL323
DL324
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DS42553
Abstract: No abstract text available
Text: DS42553 Stacked Multi-Chip Package MCP Flash Memory and SRAM Am29DL323D Top Boot 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/ 256 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS
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DS42553
Am29DL323D
16-Bit)
73-Ball
DS42553
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80c535
Abstract: SAB83C515H-4J Wiring Diagram Siemens stt SAB80C515
Text: SIEMENS SAB 83C515H-3J / 83C515H-4J 8-Bit CMOS Microcontroller Advance Information SAB 83C515H-3J/83C515H-4J CMOS microcontroller with user programmable E2PROM • 8 K X 8 E2PROM SAB 83C515H-3J • 16-bit watchdog timer • 16 K x 8 E2PROM (SAB 83C515H-4J)
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SAB83C515H-3J
SAB83C515H-4J
83C515H-3J/83C515H-4J
83C515H-3J)
83C515H-4J)
16-bit
fl53SbOS
83C515H-3J/83C515H-4J
CL-CC-68-J
80c535
Wiring Diagram Siemens stt
SAB80C515
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Untitled
Abstract: No abstract text available
Text: HB56UW272EJN Series, HB56UW264EJN Series HB56UW272EJN 16 MB Unbuffered EDO DRAM DIMM 2-Mword X 72-bit, 2 k Refresh, 1-Bank Module 9 pcs of 2 M X 8 Components HB56UW264EJN 16 MB Unbuffered EDO DRAM DIMM 2-Mword X 64-bit, 2 k Refresh, 1-Bank Module (8 pcs of 2 M X 8 Components)
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HB56UW272EJN
HB56UW264EJN
HB56UW272EJN
72-bit,
HB56UW264EJN
64-bit,
ADE-203-717C
HB56UW272EJN,
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Untitled
Abstract: No abstract text available
Text: •WIXIC MX27C4111 4 M -BIT 5 1 2 K x 8 / 2 5 6 K x 1 6 CMOS EPROM WITH PAGE M ODE FEATURES • • • • • • With Page Mode function, 8-word/16-byte page 512K x 8 or 256K x 16 organization +12.5V programming voltage Fast access time: 90/100/120/150 ns
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MX27C4111
8-word/16-byte
MX27C4111
MX27C41
40-PIN
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DIP42-P-600-2
Abstract: MR27V852D
Text: O K I Semiconductor MR27V852D_ Preliminary 524,288-Word x 16-Bit or 1,048,576-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM_ DESCRIPTION The MR27V852D is a 8Mbit electrically Programmable Read-Only Memory with page mode. Its
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MR27V852D
288-Word
16-Bit
576-Word
16-Word
MR27V852D
16bit
DIP42-P-600-2
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MR27V3252D
Abstract: No abstract text available
Text: O K I Semiconductor MR27V3252D_ Preliminary 2,097,152-Word x 16-Bit or 4,194,304-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM_ DESCRIPTION The MR27V3252D is a 32M bit electrically Programmable Read-Only Memory with page mode. Its
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MR27V3252D
152-Word
16-Bit
304-Word
16-Word
MR27V3252D
16bit
V3252D
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY MT28F400 256K x 16, 512K x 8 FLASH MEMORY |U 1I C = R C 3N FLASH MEMORY 256K x 16, 512K x 8 FEATURES PIN ASSIGNMENT Top View • Sev en erase blocks: - 1 6 K B /8 K -w o rd b oo t b lo ck (p rotected ) - T w o 8 K B /4 K -w o rd p aram eter b lo ck s
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MT28F400
100ns
V/12V,
44-Pin
16-bit
MT28F4O0
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AKN62428
Abstract: 048576-WORD
Text: AKN62418 Series AKN62428 Series 524288-Word A KN62418, x 16-Bit/I 048576-Word A K N 62428 Series is x 8-Bit CMOS Mask Programmable ROM mask- PIN CONFIGURATION programmable ROM organized either as 524288-word x 16-Bit or as an 8-Mbit CM O S A K N 62418P, A K N 62428P
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AKN62418
AKN62428
524288-Word
KN62418,
16-Bit/I
048576-Word
62418P,
62428P
524288-word
16-Bit
048576-WORD
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Untitled
Abstract: No abstract text available
Text: FLASH MEMORY B l I l i 4 M 512 K x 8 /256 K x 16 BIT M BM29 F400TA/BA-90-X/-12-x • FEATURES • •
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F400TA/BA-90-X/-12-x
48-pin
44-pin
F48030S-2C-2
F400TA/B
90-X/-12-x
44-LEAD
FPT-44P-M16)
F44023S-2C-2
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MR27V6452D
Abstract: No abstract text available
Text: O K I Semiconductor MR27V6452D_ Preliminary 4,194,304-Word x 16-Bit or 8,388,608-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM_ DESCRIPTION The M R27V6452D is a 64M bit electrically Program mable Read-Only Memory with page mode. Its
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MR27V6452D
304-Word
16-Bit
608-Word
16-Word
R27V6452D
16bit
MR27V6452D
V6452D
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KM78C80
Abstract: No abstract text available
Text: PRELIMINARY CMOS SRAM KM78C80 8 K X 16 /4 K X 16X2-Way Cache Data Static RAM FEATURES DESCRIPTION • Configurable for 2-Way or Direct Mapped Cache Organizations -2-way: 4,096 words x 16 bits — Direct: 8,192 words x 16 bits • On-Chip Address Latches for A0-A11
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KM78C80
16X2-Way
A0-A11
52-PIN
KM78C80
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Untitled
Abstract: No abstract text available
Text: IWIXIC MX27C41 n 1 4 M -B IT [5 12 K x 8 / 2 5 6 K x 16} CMOS EPROM W ITH PAGE MODE FEATURES With Page Mode function, 8-word/16-byte page 512K x 8 or 256K x 16 organization +12.5V programming voltage Fast access time: 90/120/150 ns Page mode access time 60/60/75 ns
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MX27C41
8-word/16-byte
100nA
MX27C4111
DC-15
DC-90
MX27C4111MC-90
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