transistor K 1096
Abstract: BLY89C IEC134 BLY-89c 3 w RF POWER TRANSISTOR NPN
Text: PHILIPS INTERNATIONAL bSE D • 711DÛ2L OObBS'H =134 ■ PHIN 11 BLY89C V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a nominal supply voltage of 13,5 V . The transistor is resistance stabilized
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OCR Scan
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711002b
BLY89C
transistor K 1096
BLY89C
IEC134
BLY-89c
3 w RF POWER TRANSISTOR NPN
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CI Z 131 R-10
Abstract: BLW87 h a 431 transistor transistor L6
Text: N AMER PHILIPS/DISCRETE tlE » • bbS3T31 0051474 72T H A P X BL-VVO A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f, and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is
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bbS3T31
OT-123.
7Z67567
CI Z 131 R-10
BLW87
h a 431 transistor
transistor L6
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transistor tt 2222
Abstract: transistor L6 TT 2222 npn BLY89C IEC134 transistor K 1096 33F2
Text: N AMER P H I L I P S / D I S C R E T E bTE D • bbSS'ISl D O S A G E A 2 flfc> W A P X BLY89C V.H.F. POWER TRANSISTOR N-P-N s ilic o n planar e p ita xia l tra n sisto r intended fo r use in class-A, B and C operated m obile, in d u stria l and m ilita ry tra n sm itte rs w ith a n om inal su p p ly voltage o f 13,5 V . T he tra n sisto r is resistance stabilized
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BLY89C
transistor tt 2222
transistor L6
TT 2222 npn
BLY89C
IEC134
transistor K 1096
33F2
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transistor tt 2222
Abstract: TT 2222 npn vp10lp BLW87 sot 123 transistor L6
Text: PHILIPS INTERNATIONAL bSE J> • 711DÖ2ti DGb3371 1 ^ 3 ■I P H I N BLW87 J V _ V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is
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OCR Scan
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DGb3371
BLW87
OT-123.
7Z67567
transistor tt 2222
TT 2222 npn
vp10lp
BLW87
sot 123
transistor L6
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