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    33F2 Search Results

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    DF2633F25V Renesas Electronics Corporation High-end Microcontrollers for Automotive Control and Factory Automation Applications (Non Promotion), FQFP, /Tray Visit Renesas Electronics Corporation
    SIT3701AI-13-33F-24.57600 SiTime SiT3701: Smallest Programmable Voltage-Controlled MEMS Oscillator Datasheet
    SF Impression Pixel

    33F2 Price and Stock

    Hang Crystal International 0132M4-40.2333F20DTNJK

    CRYSTAL 40.2333MHZ 20PF SMD
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    DigiKey 0132M4-40.2333F20DTNJK Reel 42,580 3,000
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    KOA Speer Electronics Inc RN73H1JTTD2133F25

    RES 213K OHM 1% 1/10W 0603
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    Silicon Laboratories Inc EFR32MG1P133F256GM48-C0

    IC RF TXRX+MCU 802.15.4 48QFN
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    Silicon Laboratories Inc EFR32MG1P233F256GM48-C0

    IC RF TXRX+MCU 802.15.4 48QFN
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    TDK Epcos B82733F2122B001

    CMC 39MH 1.2A 2LN TH
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    DigiKey B82733F2122B001 Tray 519 1
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    33F2 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    33F2 Unknown GE Transistor Specifications Scan PDF

    33F2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MG50J1BS11

    Abstract: No abstract text available
    Text: MG50J1BS11 TOSHIBA IGBT Module Silicon N Channel IGBT MG50J1BS11 High Power Switching Applications Motor Control Applications Unit: mm Enhancement-mode The electrodes are isolated from case. Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33F2A Maximum Ratings Ta = 25°C


    Original     		PDF MG50J1BS11 2-33F2A MG50J1BS11

    Untitled

    Abstract: No abstract text available
    Text: MG100J1BS11 TOSHIBA IGBT Module Silicon N Channel IGBT MG100J1BS11 High Power Switching Applications Motor Control Applications Unit: mm l Enhancement-mode l The electrodes are isolated from case. Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33F2A Maximum Ratings Ta = 25°C


    Original     		PDF MG100J1BS11 2-33F2A

    TOSHIBA IGBT

    Abstract: MG25J1BS11 igbt 25A toshiba
    Text: MG25J1BS11 TOSHIBA IGBT Module Silicon N - Channel IGBT MG25J1BS11 High Power Switching Applications Motor Control Applications Unit: mm Enhancement-mode The electrodes are isolated from case. Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33F2A Maximum Ratings Ta = 25°C


    Original     		PDF MG25J1BS11 2-33F2A TOSHIBA IGBT MG25J1BS11 igbt 25A toshiba

    MG75J1BS11

    Abstract: TOSHIBA IGBT DATA BOOK TOSHIBA IGBT
    Text: MG75J1BS11 TOSHIBA IGBT Module Silicon N Channel IGBT MG75J1BS11 High Power Switching Applications Motor Control Applications Unit: mm Enhancement-mode The electrodes are isolated from case. Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33F2A Maximum Ratings Ta = 25°C


    Original     		PDF MG75J1BS11 2-33F2A MG75J1BS11 TOSHIBA IGBT DATA BOOK TOSHIBA IGBT

    MG25J1BS11

    Abstract: No abstract text available
    Text: MG25J1BS11 TOSHIBA IGBT Module Silicon N - Channel IGBT MG25J1BS11 High Power Switching Applications Motor Control Applications Unit: mm l Enhancement-mode l The electrodes are isolated from case. Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33F2A Maximum Ratings Ta = 25°C


    Original     		PDF MG25J1BS11 2-33F2A MG25J1BS11

    mg150j

    Abstract: TOSHIBA IGBT MG150J1BS11
    Text: MG150J1BS11 TOSHIBA IGBT Module Silicon N Channel IGBT MG150J1BS11 High Power Switching Applications Motor Control Applications Unit: mm l Enhancement-mode l The electrodes are isolated from case. Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33F2A Maximum Ratings Ta = 25°C


    Original     		PDF MG150J1BS11 2-33F2A mg150j TOSHIBA IGBT MG150J1BS11

    MG150J1BS11

    Abstract: TOSHIBA IGBT TOSHIBA IGBT MG150J1BS11
    Text: MG150J1BS11 TOSHIBA IGBT Module Silicon N Channel IGBT MG150J1BS11 High Power Switching Applications Motor Control Applications Unit: mm Enhancement-mode The electrodes are isolated from case. Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33F2A Maximum Ratings Ta = 25°C


    Original     		PDF MG150J1BS11 2-33F2A MG150J1BS11 TOSHIBA IGBT TOSHIBA IGBT MG150J1BS11

    TOSHIBA IGBT

    Abstract: MG100J1BS11
    Text: MG100J1BS11 TOSHIBA IGBT Module Silicon N Channel IGBT MG100J1BS11 High Power Switching Applications Motor Control Applications Unit: mm Enhancement-mode The electrodes are isolated from case. Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33F2A Maximum Ratings Ta = 25°C


    Original     		PDF MG100J1BS11 2-33F2A TOSHIBA IGBT MG100J1BS11

    MG75J1BS11

    Abstract: No abstract text available
    Text: MG75J1BS11 TOSHIBA IGBT Module Silicon N Channel IGBT MG75J1BS11 High Power Switching Applications Motor Control Applications l Enhancement-mode l The electrodes are isolated from case. Unit: mm Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33F2A Maximum Ratings Ta = 25°C


    Original     		PDF MG75J1BS11 2-33F2A MG75J1BS11

    MG50J1BS11

    Abstract: No abstract text available
    Text: MG50J1BS11 TOSHIBA IGBT Module Silicon N Channel IGBT MG50J1BS11 High Power Switching Applications Motor Control Applications Unit: mm l Enhancement-mode l The electrodes are isolated from case. Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33F2A Maximum Ratings Ta = 25°C


    Original     		PDF MG50J1BS11 2-33F2A MG50J1BS11

    Untitled

    Abstract: No abstract text available
    Text: S5688B,S5688G,S5688J,S5688N TOSHIBA Rectifier Silicon Diffused Type S5688B, S5688G, S5688J, S5688N General Purpose Rectifier Application Unit: mm • Average forward current: IF AV = 1.0 A • Repetitive peak reverse voltage: VRRM = 100 V ~ 1000 V Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF S5688B S5688G S5688J S5688N S5688B, S5688G, S5688J,

    Untitled

    Abstract: No abstract text available
    Text: 1JH46 TOSHIBA FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE 1JH46 SWITCHING MODE POWER SUPPLY APPLICATIONS z Repetitive Peak Reverse Voltage : VRRM = 600V z Average Forward Current : IF AV = 1.0A Unit: mm z Very Fast Reverse−Recovery Time : trr = 200ns (Max)


    Original     		PDF 1JH46 200ns

    FAST applications Handbook

    Abstract: No abstract text available
    Text: 1NH42 TOSHIBA FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE 1NH42 SWITCHING MODE POWER SUPPLY APPLICATIONS • Repetitive Peak Reverse Voltage: VRRM = 1000V • Average Forward Current: IF AV = 1.0A • Very Fast Reverse Recovery Time: trr = 400ns (Max)


    Original     		PDF 1NH42 400ns FAST applications Handbook

    dla toshiba

    Abstract: 1DL42A TOSHIBA RECTIFIER TOSHIBA DLA
    Text: 1DL42A TOSHIBA High Efficiency Rectifier HED Silicon Epitaxial Junction Type 1DL42A Switching Mode Power Supply Applications • Unit: mm Repetitive Peak Reverse Voltage: VRRM = 200 V • Average Forward Current: IF (AV) = 1.0 A • Very Fast Reverse-Recovery Time: trr = 35 ns (max)


    Original     		PDF 1DL42A dla toshiba 1DL42A TOSHIBA RECTIFIER TOSHIBA DLA

    AX323

    Abstract: AX324
    Text: jvisiytAjyi , 19-0347; Rev 0; 12/94 Precision Single-Supply, SPST Analog S w itches _F e a tu r e s ♦ Low On-Resistance Ro n . 60Q max (33f2 typ) When pow ered from a 5V supply, the M AX323 series offers 2Q m ax m atching between channels, 60£2 max


    OCR Scan     		PDF MAX323 MAX324 MAX325 100pA 150ns 100ns AX323 AX324

    Untitled

    Abstract: No abstract text available
    Text: 2-33F2A Unit m Aug,2002


    OCR Scan     		PDF 2-33F2A 20022-33F2A

    05NH46

    Abstract: No abstract text available
    Text: TOSHIBA 05NH46 TOSHIBA FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE 05NH46 Unit in mm SWITCHING TYPE PO W ER SUPPLY APPLICATIONS • • • Repetitive Peak Reverse Voltage Average Forward Current Very Fast Reverse-Reeovery Time V r r m = io o o v m . :F AV = 0-5A


    OCR Scan     		PDF 05NH46 200ns 961001EAA2'

    05NU42

    Abstract: No abstract text available
    Text: TOSHIBA 05NU42 TOSHIBA SUPER FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE 05NU42 Unit in mm SWITCHING TYPE POWER SUPPLY APPLICATIONS • • • Repetitive Peak Reverse Voltage Average Forward Current Very Fast Reverse-Reeovery Time V r r m = io o o v m .


    OCR Scan     		PDF 05NU42 100ns 961001EAA2'

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TFR7H TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TFR7 H STROBO FLASHER APPLICATIONS FAST RECOVERY U n it in mm • Average Forw ard C urrent : Txr* (A V ) —0=2A • Reverse Voltage (D C ) • R ep etitive Peak Reverse Surge Voltage :V r r s m = 1500V


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SH IB A S5688B,S5688G,S5688J,S5688N TOSHIBA RECTIFIER SILICON DIFFUSED TYPE S5688B, S5688G, S5688J, S5688N Unit nun GENERAL PURPOSE RECTIFIER APPLICATIONS. tt • in Ttt* A iVn -1 Í1A Average Forwgr¿ Current Repetitive Peak Reverse Voltage VRRM= 100-1000V


    OCR Scan     		PDF S5688B S5688G S5688J S5688N S5688B, S5688G, S5688J, S5688N 00-1000V

    ED 05

    Abstract: No abstract text available
    Text: TO SH IBA 1FWJ43N TOSHIBA SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER TYPE 1 FWJ43N Unit in mm HIGH SPEED RECTIFIER APPLICATIONS • • • Low Forward Voltage Average Forward Current Repetitive Peak Reverse Voltage VFM = 0.37 V Max. ÏF(AV) =1-0 A V r r m = 30V


    OCR Scan     		PDF 1FWJ43N FWJ43N ED 05

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A S5688B,S5688G,S5688J,S5688N TOSHIBA RECTIFIER SILICON DIFFUSED TYPE S5688B, S5688G, S5688J, S5688N GENERAL PURPOSE RECTIFIER APPLICATIONS. U nit in mm • Average Forward Current :F AV = 1-Oa • Repetitive Peak Reverse Voltage V rrm = 100~1000V


    OCR Scan     		PDF S5688B S5688G S5688J S5688N S5688B, S5688G, S5688J, S5688B S5688G

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF

    CQ220I-6BS

    Abstract: CQ220I-6DS CQ220I-6MS CQ220I-6NS
    Text: Datasheet CQ220I-6BS CQ220I-6DS CQ220I-6MS CQ220I-6NS I Sem iconductor Com ISOLATED TAB TRIAC 6.0 AMP. 200 THRU 800 VOLTS 145 A d a m s Avenue, Hauppauge, NY 11788 U S A Tel: 631 435-1110 • Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors


    OCR Scan     		PDF CQ220I-6BS CQ220I-6DS CQ220I-6MS CQ220I-6NS TQ-220AB T0-220 CQ220I CQ220I CQ220I-6NS