7W RF POWER TRANSISTOR NPN Search Results

7W RF POWER TRANSISTOR NPN Result Highlights (5)

Part	Manufacturer	Description
MX0912B251Y	Rochester Electronics LLC	MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die)
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL

7W RF POWER TRANSISTOR NPN Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
nte357 Abstract: 7w RF POWER TRANSISTOR NPN transistor 828 Text: NTE357 Silicon NPN Transistor RF Power Output PO = 7W @ 175MHz Description: The NTE357 RF power transistor is designed primarily for wideband large−signal amplifier stages in the 125−175MHz frequency range. Features: D Specified 28V, 175MHz Characteristics −	Original	PDF	NTE357 175MHz NTE357 125-175MHz 175MHz 30Vdc, 100mAdc, 28Vdc, 7w RF POWER TRANSISTOR NPN transistor 828
multi emitter transistor Abstract: RF POWER TRANSISTOR 100MHz 7w RF POWER TRANSISTOR NPN rf transistor 320 IC vhf/uhf Amplifier multi-emitter transistor TRANSISTOR HANDLING 2A NTE16003 Text: NTE16003 Silicon NPN Transistor RF Power Output, PO = 7W, 175MHz Description: The NTE16003 is an RF power transistor in a TO60 type case that employs a multi emitter electrode design. This feature together with a heavily diffused base matrix located between the individual emitters results in high RF current handling capability, high power gain, low base resistance, and low output capacitance. This device is intended for Class A, B, or C amplifier, oscillator, or frequency multiplier circuits and is specifically designed for operation in the VHF–UHF region.	Original	PDF	NTE16003 175MHz NTE16003 200mA, 150mA, 100MHz 175MHz, multi emitter transistor RF POWER TRANSISTOR 100MHz 7w RF POWER TRANSISTOR NPN rf transistor 320 IC vhf/uhf Amplifier multi-emitter transistor TRANSISTOR HANDLING 2A
TRANSISTOR Z4 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor MRF392 Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics —	Original	PDF	MRF392 MRF392 TRANSISTOR Z4
MS1253 Abstract: No abstract text available Text: MS1253 RF & MICROWAVE TRANSISTORS HF/VHF APPLICATIONS Features • • • • • 50 MHz 12.5 VOLTS POUT = 70 WATTS Gp = 10 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: DESCRIPTION The MS1253 is a 12.5 V Class C epitaxial silicon NPN transistor designed primarily for land mobile transmitter	Original	PDF	MS1253 MS1253
transistor z5 Abstract: erie redcap IC 2025 NPN TRANSISTOR Z4 RF push pull power amplifier TRANSISTOR Z4 MRF392 redcap 7w120 transistor D 716 Text: Order this document by MRF392/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor MRF392 Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics —	Original	PDF	MRF392/D MRF392 MRF392 i1-44-844-8298 transistor z5 erie redcap IC 2025 NPN TRANSISTOR Z4 RF push pull power amplifier TRANSISTOR Z4 redcap 7w120 transistor D 716
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF392/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor MRF392 Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics —	Original	PDF	MRF392/D MRF392 MRF392/D*
Z1 Transistor Abstract: MRF392 Text: MOTOROLA Order this document by MRF392/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon Push-Pull RF Power Transistor MRF392 Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics —	Original	PDF	MRF392/D MRF392 MRF392/D* Z1 Transistor MRF392
MRF392 Abstract: TRANSISTOR Z4 3142 equivalent J044 Z1 Transistor 6 pin transistor Z6 Z6 82 mini cap 744A-01 LX125 Text: MOTOROLA Order this document by MRF392/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor MRF392 Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics —	Original	PDF	MRF392/D MRF392 MRF392/D* MRF392 TRANSISTOR Z4 3142 equivalent J044 Z1 Transistor 6 pin transistor Z6 Z6 82 mini cap 744A-01 LX125
NTE473 Abstract: No abstract text available Text: NTE473 Silicon NPN Transistor RF Power Driver Description: The NTE473 is a silicon NPN transistor in a TO39 type package designed for amplifier and oscillator applications in military and industrial equipment. Suitable for use as output, driver or predriver stages	Original	PDF	NTE473 NTE473 175MHz, 250mA, 100mA, 100MHz 100kHz 175MHz
2N3553 Abstract: 2N3553 equivalent TO39 Package RF POWER TRANSISTOR NPN 7w RF POWER TRANSISTOR NPN 2N3553 NPN npn power amplifier circuit common emitter amplifier transistor 2n3553 4 npn transistor ic Text: 2N3553 2N3553 Silicon NPN Transistor RF Power Driver Description: The 2N3553 is a silicon NPN transistor in a TO39 type package designed for amplifier and oscillator applications in military and industrial equipment. Suitable for use as an output, driver, or in predriver	Original	PDF	2N3553 2N3553 175MHz, 100mA, 100MHz 100kHz 175MHz 250mA, 20html 2N3553 equivalent TO39 Package RF POWER TRANSISTOR NPN 7w RF POWER TRANSISTOR NPN 2N3553 NPN npn power amplifier circuit common emitter amplifier transistor 2n3553 4 npn transistor ic
5BP smd transistor data Abstract: 5Bp smd smd-transistor DATA BOOK 725 REGULATOR motorola smd-transistor 5bp 7805 smd Datasheet of ic 7805 SMD TRANSISTOR smd-transistor -1.am 8 PIN SMD IC 305 Equivalent Text: MOTOROLA Order this document by TP3061/D SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Power Transistor TP3061 The TP3061 is designed for 960 MHz mobile base stations in both analog and digital applications. It incorporates high value emitter ballast resistors, gold	Original	PDF	TP3061/D TP3061 TP3061 TP3060 TP3061/D* 5BP smd transistor data 5Bp smd smd-transistor DATA BOOK 725 REGULATOR motorola smd-transistor 5bp 7805 smd Datasheet of ic 7805 SMD TRANSISTOR smd-transistor -1.am 8 PIN SMD IC 305 Equivalent
7w RF POWER TRANSISTOR NPN Abstract: 2SC4524 2sc4524 mitsubishi Text: MITSUBISHI RF POWER TRANSISTOR 2SC4524 NPN EPITAXIAL PLANAR TYPE D IS C R E T IO N 2SC4524 is a silicon NPN epitaxial planar type transistor specifically designed for RF power amplifiers applications in 1.65GHz. O U T L IN E D R A W IN G Dimensions in mm FEATURES	OCR Scan	PDF	2SC4524 65GHz. 65GHz, T-31B 7w RF POWER TRANSISTOR NPN 2sc4524 mitsubishi
25C45 Abstract: No abstract text available Text: MITSUBISHI RF POWER TRANSISTOR 2SC4524 NPN EPITAXIAL PLANAR T Y P E D IS C R IP T IO N O U T L IN E D R A W IN G 2SC 4524 is a silicon NPN epitaxial planar type transistor specifically designed for R F power amplifiers applications in 1.65GHz. Dimensions in mm	OCR Scan	PDF	2SC4524 2SC4524 65GHz. 65GHz, T-31B 25C45
Untitled Abstract: No abstract text available Text: MITSUBISHI RF POWER TRANSISTOR 2SC4524 NPN EPITAXIAL PLANAR T Y P E D IS C R IP T IO N O U T L IN E D R A W IN G 2 S C 4 5 2 4 is a silicon N P N epitaxial planar type transistor specifically designed for R F power amplifiers applications Dimensions in mm	OCR Scan	PDF	2SC4524 65GHz.

Untitled Abstract: No abstract text available Text: MITSUBISHI RF POWER TRANSISTOR ooi?b?7 m m NPN EPITAXIAL PLANAR TYPE DISCRETION OUTLINE DRAWING 2SC3240 is a silicon NPN epitaxial planar type transistor specifically designed for high power amplifiers in HF band. Dimensions in mm FEATURES • High gain: Gpe^ 1 1 .5 d B r Po ^ 1 0 0 W	OCR Scan	PDF	2SC3240 2SC3240
7w RF POWER TRANSISTOR NPN Abstract: 2SC3021 12W 97 T-31E transistor 1.2w high power npn UHF transistor Text: MITSUBISHI RF POWER TRANSISTOR 2SC3021 NPN EP ITA X IA L PLANAR T Y P E DESCRIPTION 2SC3021 is a silicon NPN epitaxial planar type transistor specifi cally designed for UHF power amplifiers applications. OUTLINE DRAWING D im en sions in m m FEATURES •	OCR Scan	PDF	2SC3021 2SC3021 520MHz, 7w RF POWER TRANSISTOR NPN 12W 97 T-31E transistor 1.2w high power npn UHF transistor
rf 3021 Abstract: No abstract text available Text: MITSUBISHI RF POWER TRANSISTOR 2SC3021 NPN E P IT A X IA L PLANAR T Y P E DESCRIPTION 2S C 3021 is a silicon NPN epitaxial planar type transistor specifi OUTLINE DRAWING D im e n s io n s in m m cally designed for UHF power amplifiers applications. FEATURES	OCR Scan	PDF	2SC3021 rf 3021
Untitled Abstract: No abstract text available Text: MITSUBISHI RF POWER TRANSISTOR 2SC1967 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC1967 is a silicon NPN epitaxial planar type transistor designed Dimensions in mm for RF power amplifiers on U H F band mobile radio applications. 4 0±0 5 H	OCR Scan	PDF	2SC1967 2SC1967
2SC1967 Abstract: mitsubishi RF POWER TRANSISTOR RF POWER TRANSISTOR 470-MHz Text: MITSUBISHI RF POWER TRANSISTOR 2SC1967 NPN EP IT A X IA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC1967 is a silicon NPN epitaxial planar type transistor designed Dimensions in mm for RF power amplifiers on U H F band mobile radio applications. FEATURES	OCR Scan	PDF	2SC1967 2SC1967 470MHz 470MHz. T-31E 470MH mitsubishi RF POWER TRANSISTOR RF POWER TRANSISTOR 470-MHz
Untitled Abstract: No abstract text available Text: L3UQn-m nni , 0017701 Tib MITSUBISHI RF POWER TRANSISTOR — NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC4167 is a silicon NPN epitaxial planar type transistor specifi cally designed fo r UHF power amplifiers applications. OUTLINE DRAWING D im e n s io n s in m m	OCR Scan	PDF	2SC4167
2SC3240 Abstract: 7w RF POWER TRANSISTOR NPN TRANSISTOR 2sc3240 hf amplifier 100w Text: MITSUBISHI RF POWER TRANSISTOR 2SC3240 NPN EPITAXIAL PLANAR TY PE D ISCRETIO N OUTLINE DRAWING 2SC 3240 is a silicon NPN epitaxial planar typ e transistor D im e n s io n s in m m spe cifica lly designed fo r high pow er am plifiers in HF band. FEATURES •	OCR Scan	PDF	2SC3240 2SC3240 7w RF POWER TRANSISTOR NPN TRANSISTOR 2sc3240 hf amplifier 100w
2sc2904 TRANSISTOR Abstract: 2SC2904 hf amplifier 100w T-40 Text: MITSUBISHI RF POWER TRANSISTOR 2SC2904 NPN EP ITA X IA L PLANAR T Y P E DISCRETIO N OUTLINE DRAWING 2 S C 2 9 0 4 is a silicon N P N epitaxial planar type transistor Dimensions in mm sp e cific a lly designed fo r high pow er a m plifiers in H F band. R1 FEATURES	OCR Scan	PDF	2SC2904 2SC2904 2sc2904 TRANSISTOR hf amplifier 100w T-40
cb 10 b 60 kd Abstract: 2SC4167 T-47 Text: MITSUBISHI RF POWER TRANSISTOR 2SC4167 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION 2 S C 4167 is a silicon NPN epitaxial planar typ e transistor spe cifi OUTLINE DRAWING Dim ensions in mm cally designed fo r UHF pow er am plifiers applications. FEATURES •	OCR Scan	PDF	2SC4167 2SC4167 220pF, cb 10 b 60 kd T-47
Untitled Abstract: No abstract text available Text: MITSUBISHI RF POWER TRANSISTOR DD l T b T ? 7bS 2SC3908 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC3908 is a silicon NPN epitaxial planar type transistor designed for HF power amplifiers applications. Dimensions in mm FEATURES • High power gain: Gpe ^ 11.5dB	OCR Scan	PDF	2SC3908 2SC3908 30MHz, 30MHz.

7W RF POWER TRANSISTOR NPN Search Results

7W RF POWER TRANSISTOR NPN Result Highlights (5)

7W RF POWER TRANSISTOR NPN Datasheets Context Search

nte357

multi emitter transistor

TRANSISTOR Z4

MS1253

transistor z5

Untitled

Z1 Transistor

MRF392

NTE473

2N3553

5BP smd transistor data

7w RF POWER TRANSISTOR NPN

25C45

Untitled

Untitled

7w RF POWER TRANSISTOR NPN

rf 3021

Untitled

2SC1967

Untitled

2SC3240

2sc2904 TRANSISTOR

cb 10 b 60 kd

Untitled