Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER MODULE M57714 450-470MHZ, 12.5V, 7W, FM MOBILE RADIO BLO CK DIAGRAM CD—IH- > 4 1 h > hi- > h © I— PIN : © P in ; RF INPU T © V C C 1 : 1st. DC SUPPLY VC C2 : 2nd. DC SUPPLY ® VC C3 : 3rd. DC SUPPLY ®PO : RF O UTPUT ® G N D : FIN
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M57714
450-470MHZ,
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Untitled
Abstract: No abstract text available
Text: ba MR f l ST 0017211 350 • MITSUBISHI RF POWER MODULE M57749 903-905MHZ, 12.5V, 7W, FM MOBILE RADIO OUTLINE DRAWING Dimensions in mm BLOCK DIAGRAM PIN : Pin ®VCCi @VCC2 @VCC3 ®Po ®GND : RF INPUT : 1st. DC SUPPLY : 2nd. DC SUPPLY : 3rd. DC SUPPLY : RF OUTPUT
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M57749
903-905MHZ,
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER MODULE ^ 5 4 ^ 0 5 ^ 0ül712«i bQT • M57714 450-470MHZ, 12.5V, 7W, FM MOBILE RADIO OUTLINE DRAWING Dimensions in mm BLOCK DIAGRAM Hr PIN : © P in : RF INPUT V C C l : 1st. DC SUPPLY @VCC 2 : 2nd. DC SUPPLY ® V c c 3 : 3rd. DC SUPPLY
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M57714
450-470MHZ,
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M57782
Abstract: No abstract text available
Text: MITSUBISHI RF POWER MODULE M57782 824-851 MHz, 12.5V, 7W, FM MOBILE RADIO OUTLINE DRAWING BLOCK DIAGRAM Dimensions in mm qh Æ i- P h PIN : ©Pin : RF INPUT VCC 1 : 1st. DC SUPPLY ®VCC 2 : 2nd. DC SUPPLY ®VCC3 : 3rd. DC SUPPLY ®P0 : RF OUTPUT ® G N D : FIN
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M57782
10/iiF
4700pF
M57782
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transistor p02
Abstract: m57714 Mitsubishi transistor rf final
Text: MITSUBISHI RF POWER MODULE M57714 450-470MHZ, 12.5V, 7W, FM MOBILE RADIO OUTLINE DRAWING BLOCK DIAGRAM Dimensions in mm ©—IH- I—© PIN : © P in : RF IN P U T @VCC1 : 1st. DC SUPPLY V C C 2 : 2nd. DC SUPPLY @ V C C 3 : 3rd. DC SUPPLY ®PO : RF O U TPU T
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M57714
450-470MHZ,
transistor p02
m57714
Mitsubishi transistor rf final
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PDF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER MODULE D 0 17 E 3cì 43T • _ _ M57782 824-851 MHz, 12.5V, 7W, FM MOBILE RADIO OUTLINE DRAWING B LO C K DIAGRAM Dimensions in mm © PIN : ©Pin : RF INPUT ©VCCI VCC 2 ®VCC3 ® P0 ©GND : 1st. DC SU PPLY : 2nd. DC SU PPLY : 3rd. DC S U PPLY
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M57782
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Untitled
Abstract: No abstract text available
Text: AP603 High Dynamic Range 7W 28V HBT Amplifier Product Features Product Description • 800 – 2200 MHz • +38.5 dBm P1dB • -50 dBc ACLR @ 1W PAVG • -51 dBc IMD3 @ 1W PEP Functional Diagram The AP603 is a high dynamic range power amplifier in a lead-free/RoHS-compliant 5x6mm power DFN SMT
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AP603
AP603
J-STD-020
1-800-WJ1-4401
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AP603
Abstract: AP603-F AP603-PCB1960 AP603-PCB2140 AP603-PCB900 JESD22-A114 land pattern for DFN c1840 DBM13-34
Text: AP603 High Dynamic Range 7W 28V HBT Amplifier Product Features Product Description • 800 – 2200 MHz • +38.5 dBm P1dB • -50 dBc ACLR @ 1W PAVG • -51 dBc IMD3 @ 1W PEP • 15% Efficiency @ 1W PAVG Functional Diagram The AP603 is a high dynamic range power amplifier in a
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AP603
AP603
JESD22-A114
JESD22-C101
J-STD-020
1-800-WJ1-4401
AP603-F
AP603-PCB1960
AP603-PCB2140
AP603-PCB900
JESD22-A114
land pattern for DFN
c1840
DBM13-34
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AP603
Abstract: AP603-F AP603-PCB1960 AP603-PCB2140 AP603-PCB900 JESD22-A114
Text: AP603 High Dynamic Range 7W 28V HBT Amplifier Product Features Product Description • 800 – 2200 MHz • +38.5 dBm P1dB • -50 dBc ACLR @ 1W PAVG • -51 dBc IMD3 @ 1W PEP • 15% Efficiency @ 1W PAVG Functional Diagram The AP603 is a high dynamic range power amplifier in a
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AP603
AP603
JESD22-A114
JESD22-C101
J-STD-020
1-800-WJ1-4401
AP603-F
AP603-PCB1960
AP603-PCB2140
AP603-PCB900
JESD22-A114
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rd07mvs1b101
Abstract: 3M Touch Systems D07MVS1
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1B Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 2.0+/-0.05 2 3.5+/-0.05 1.0+/-0.05
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RD07MVS1B
175MHz
520MHz
RD07MVS1B
RD07MVS1
175MHz)
520MHz)
rd07mvs1b101
3M Touch Systems
D07MVS1
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Untitled
Abstract: No abstract text available
Text: AP603 High Dynamic Range 7W 28V HBT Amplifier Product Features Product Description • 800 – 2200 MHz • +38.5 dBm P1dB • -50 dBc ACLR @ 1W PAVG • -51 dBc IMD3 @ 1W PEP Functional Diagram The AP603 is a high dynamic range power amplifier in a lead-free/RoHS-compliant 5x6mm power DFN SMT
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Original
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AP603
AP603
JESD22-C101
J-STD-020
1-800-WJ1-4401
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PDF
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RD07MVS1
Abstract: RD07MVS1-101 T112 3M Touch Systems
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 OUTLINE DRAWING RD07MVS1 is a MOS FET type transistor
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RD07MVS1
175MHz
520MHz
RD07MVS1
520MHz
175MHz)
520MHz)
RD07MVS1-101
T112
3M Touch Systems
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PDF
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3M Touch Systems
Abstract: No abstract text available
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS2 RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 6.0+/-0.15 FEATURES 2.0+/-0.05
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RD07MVS2
175MHz
520MHz
RD07MVS2
175MHz)
520MHz)
3M Touch Systems
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PDF
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RD07MVS1
Abstract: RD07MVS1B T112 3M Touch Systems
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1B Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 2.0+/-0.05 2 3.5+/-0.05 1.0+/-0.05
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RD07MVS1B
175MHz
520MHz
520MHz
175MHz)
520MHz)
RD07MVS1B
RD07MVS1
T112
3M Touch Systems
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PDF
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RD07MVS1-101
Abstract: RD07MVS1 T112 ID-750 RD07M D07MVS1 3M Touch Systems
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 OUTLINE DRAWING RD07MVS1 is a MOS FET type transistor
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RD07MVS1
175MHz
520MHz
RD07MVS1
RD07MVS1-101,
RD07MVS1-101
T112
ID-750
RD07M
D07MVS1
3M Touch Systems
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PDF
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Untitled
Abstract: No abstract text available
Text: < Silicon RF Power MOS FET Discrete > RD07MVS1 RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING DESCRIPTION 0.2+/-0.05 (0.22) 6.0+/-0.15 specifically designed for VHF/UHF RF power 2.0+/-0.05 1.0+/-0.05 4.9+/-0.15 FEATURES
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RD07MVS1
175MHz
520MHz
520MHz
520MHz)
175MHz)
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PDF
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Untitled
Abstract: No abstract text available
Text: < Silicon RF Power MOS FET Discrete > RD07MVS1B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING DESCRIPTION 0.2+/-0.05 (0.22) 6.0+/-0.15 specifically designed for VHF/UHF RF power RD07MVS1 by optimizing MOSFET structure.
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RD07MVS1B
175MHz
520MHz
RD07MVS1
RD07MVS1B
520MHz
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PDF
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RD07MVS1B
Abstract: transistor t06 19 RD07MVS1B-101 RD07MVS1 T112
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1B Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 2.0+/-0.05 2 For output stage of high power amplifiers in
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RD07MVS1B
175MHz
520MHz
RD07MVS1B-101,
RD07MVS1B
transistor t06 19
RD07MVS1B-101
RD07MVS1
T112
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PDF
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Untitled
Abstract: No abstract text available
Text: < Silicon RF Power MOS FET Discrete > RD07MVS2 Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 RD07MVS2 is a MOS FET type transistor specifically designed for VHF/UHF RF power 6.0+/-0.15 0.2+/-0.05 (0.22)
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RD07MVS2
175MHz
520MHz
RD07MVS2
520MHz
175MHz)
520MHz)
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PDF
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RD07M
Abstract: No abstract text available
Text: < Silicon RF Power MOS FET Discrete > RD07MVS1 RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING DESCRIPTION 0.2+/-0.05 (0.22) 6.0+/-0.15 specifically designed for VHF/UHF RF power 2.0+/-0.05 1.0+/-0.05 4.9+/-0.15 FEATURES
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RD07MVS1
175MHz
520MHz
RD07MVS1
175MHz)
520MHz)
Oct2011
RD07M
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PDF
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diode gp 434
Abstract: RD07MVS2 diode zener 7.2v RD07MVS1 T112 318 MARKING DIODE
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD07MVS2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION OUTLINE DRAWING 0.22 2.0+/-0.05 1.0+/-0.05 2 3.5+/-0.05 1 3 (0.25) INDEX MARK (Gate)
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RD07MVS2
175MHz
520MHz
520MHz
175MHz)
520MHz)
diode gp 434
RD07MVS2
diode zener 7.2v
RD07MVS1
T112
318 MARKING DIODE
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PDF
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RD07MVS2
Abstract: No abstract text available
Text: < Silicon RF Power MOS FET Discrete > RD07MVS2 Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 RD07MVS2 is a MOS FET type transistor specifically designed for VHF/UHF RF power 6.0+/-0.15 0.2+/-0.05 (0.22)
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RD07MVS2
175MHz
520MHz
RD07MVS2
175MHz)
520MHz)
Oct2011
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PDF
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GP4060
Abstract: No abstract text available
Text: < Silicon RF Power MOS FET Discrete > RD07MVS1B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING DESCRIPTION 0.2+/-0.05 (0.22) 6.0+/-0.15 specifically designed for VHF/UHF RF power RD07MVS1 by optimizing MOSFET structure.
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RD07MVS1B
175MHz
520MHz
RD07MVS1B
RD07MVS1
175MHz)
520MHz)
Oct2011
GP4060
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PDF
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TC 7W H 126FU /FK TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Tf7\A/H17fiFI I Tr7\A/H 1 J R F K • a m m u u g ■ ■ a m m u u ■ ■ am. DUAL BUS BUFFER The TC7WH126 is an advanced high speed CMOS DUAL BUS BUFFERS fabricated with silicon gate CMOS
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126FU
Tf7\A/H17fiFI
TC7WH126
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