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    KM416C1200AJ

    Abstract: ra57
    Text: DRAM MODULE KMM5321200AW/AWG KMM5321200AW/AWG Fast Page Mode 1Mx32 DRAM SIMM, 1K Refresh, 5V, using 1Mx16 DRAM G EN ER AL DESCRIPTION FEATURES The Samsung KMM5321200AW is a 1M bit x 32 Dynam ic RAM high density m em ory module. The • Part Identification


    OCR Scan     		PDF M5321200AW/AWG KMM5321200AW/AWG 1Mx32 1Mx16 KMM5321200AW 42-pin 72-pin KMM5321200AW KM416C1200AJ ra57

    Untitled

    Abstract: No abstract text available
    Text: KM44V1000DJ CMOS D R A M ELECTRONICS 1 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access


    OCR Scan     		PDF KM44V1000DJ 16Mx4, 512Kx8) GD3474Ã 7Tb4142 GG3474T

    BM125

    Abstract: No abstract text available
    Text: SMF-03300 ELECTRO NICS Sam sung M icrow ave Sem iconductor Gain Optimized Low Current G aAs FET 2-20 GHz Description Features The S M F-03300 is a 300 p.m n-channel M E S F E T with 0.5 |xm gate length, utilizing Sam sung M icrowave’s gain/low current optimized G 30 process. Ti/Pt/Au gate metallization


    OCR Scan     		PDF SMF-03300 F-03300 BM125

    KM416S4030A

    Abstract: km416s4031 KM416S4030AT-G
    Text: K M 4 16 S 4 0 3 1 AT SDRAM ELECTRONICS 1 M x 16Bitx 4 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply. • LVTTL/SSTL_3 Class II compatible with multiplexed address. • 4 banks operation. • MRS cycle with address key programs.


    OCR Scan     		PDF 16Bitx KM416S4030A/KM416S4031A 416S4031AT) KM416S4030A km416s4031 KM416S4030AT-G

    asea EH 9-10

    Abstract: J 6920 A ite 8892 7420 pin configuration st 9318 KS8805BD 7809 A PI 505 7809 ct 8500-29 B KS8805B
    Text: KS8805B UNIVERSAL PROGRAMMABLE PLL INTRODUCTION 1S-DIP-300A The KS8805B is a superior low power-programmable dual frequency synthesizer PLL which can be used in high performance CT-1 cord­ less phone system with frequency range under 60 MHz in ail over the


    OCR Scan     		PDF KS8805B KS8805B 16-DIP-300A 16-SOP-225 16-DIP-300A KS8805BD 455KHZ 25KHZ) asea EH 9-10 J 6920 A ite 8892 7420 pin configuration st 9318 7809 A PI 505 7809 ct 8500-29 B

    pin diagram priority encoder 74145

    Abstract: 37-c4 NTSC/PAL TO RGB565 samsung y2 capacitor CCIR601 KS0119 KS0122
    Text: KS0122 Multimedia ELECTRONICS MULTISTANDARD VIDEO DECODER Th e KS0122 converts analog N TSC or PAL video in composite or S-video format to digitized component video. Output data can be selected for C C IR 601 or square pixel sample rates in either Y U V or


    OCR Scan     		PDF KS0122 KS0122 KS0122) 0033b07 0033bQÃ pin diagram priority encoder 74145 37-c4 NTSC/PAL TO RGB565 samsung y2 capacitor CCIR601 KS0119

    Untitled

    Abstract: No abstract text available
    Text: KM44C16100AK CMOS D R A M ELECTR O NICS 1 6 Mx 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Access time -5, -6, or -7 , package type(SOJ or


    OCR Scan     		PDF KM44C16100AK 16Mx4 16Mx4, 512Kx8) 7RL4142 DG3431Ã

    96-Seg

    Abstract: No abstract text available
    Text: KS57C2408 4-BIT CMOS Microcontroller ELECTRONICS Product Specification OVERVIEW The KS57C2408 single-chip CMOS microcontroller is designed for very high performance using Samsung's newest 4-bit product development approach, SAM4 Samsung Arrangeable Microcontrollers . Its main features


    OCR Scan     		PDF KS57C2408 KS57C2408 up-to-12-digit 16-bit 80-pin 002b535 71b4142 D0SbS37 96-Seg

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC bME D KM416C256/L/SL • 7^4142 DD1343Q Q24 I SHGK CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C256/USL is a CMOS high speed 262,144 bit x 16 Dynamic Random Access Memory. Its


    OCR Scan     		PDF KM416C256/L/SL DD1343Q KM416C256/USL 130ns KM416C256/USL-8 150ns KM416C256/L/SL-10 KM416C256/USL-7 100ns 180ns

    Untitled

    Abstract: No abstract text available
    Text: KS57C0002 4-BIT CMOS Microcontroller ELECTRONICS Product Specification 2 OVERVIEW The KS57C0002 single-chip CMOS microcontroller is designed for high-performance using Samsung's newest 4-bit CPU core. With a four-channel comparator, eight LED direct drive pins, serial I/O interface, and a versatile


    OCR Scan     		PDF KS57C0002 KS57C0002 30-pin Me57C0002 fx/64,

    Untitled

    Abstract: No abstract text available
    Text: KM4 8 C 124DJ CMOS DRAM ELECTRONICS 128K x 8 Bit CM OS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 131,072x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Access time 55, 60, or 70 and power consumption


    OCR Scan     		PDF 124DJ 128Kx8 16Mx4, 512Kx8) KM48C124DJ KM48C

    KA7905

    Abstract: 1N400I KA79XX KA7912 FC53 ka7905 regulator
    Text: KA79XX C l C f* ELECTRONICS Industrial 3-TERM INAL 1A NEGATIVE V O LTA G E REG U LA TO RS Th e KA79XX se rie s of three-terminal negative regulators are available in TO -220 package and with several fixed output voltages, making them useful in a wide range of applications. E ach type em ploys internal current limiting,


    OCR Scan     		PDF KA79XX KA79XX O-220 0-125X; KA7905 KA7905 1N400I KA7912 FC53 ka7905 regulator

    KM416C1200AJ

    Abstract: No abstract text available
    Text: DRAM MODULE KMM5321200AW/AWG KMM5321200AW/AWG Fast Page Mode 1Mx32 DRAM SIMM, 1K Refresh, 5V, using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5321200AW is a 1M bit x 32 Dynam ic RAM high density m em ory module. The Samsung KM M 5321200AW consists of tw o CMOS


    OCR Scan     		PDF KMM5321200AW/AWG KMM5321200AW/AWG 1Mx32 1Mx16 KMM5321200AW 5321200AW KMM5321200AW cycles/16 KM416C1200AJ

    Untitled

    Abstract: No abstract text available
    Text: LINEAR INTEGRATED CIRCUIT KA2810 VCM + SPM DRIVER for 3.5 Inch HDD The KA2810 is one chip IC designed to drive Spindle Motor SPM and Voice Coil Motor(VCM) in 3.5 inch Hard Disk Driver (HDD). The Analog Servo Control function can be performed well by built-in High-speed OPAmp and Comparators.


    OCR Scan     		PDF KA2810 KA2810 DAN212K MBR130T3 RB4110

    Untitled

    Abstract: No abstract text available
    Text: KM48V512B/BL/BLL CMOS DRAM 51 2 K x8 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range: tR A C tC A C tR C KM48V512B/BI7BLL-6 60ns 15ns 110ns KM48V512B/BL/BLL-7 70ns 20ns 130ns KM48V512B/BL/BLL-8 80ns 20ns 150ns •


    OCR Scan     		PDF KM48V512B/BL/BLL KM48V512B/BI7BLL-6 110ns KM48V512B/BL/BLL-7 130ns KM48V512B/BL/BLL-8 150ns cycle/16ms cycle/128ms

    KM44S4020AT

    Abstract: 71142 a
    Text: KM44S4020AT SDRAM 2M x 4Bit x 2 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply. • LVTTL compatible with multiplexed address. • Dual Bank. • MRS cycle with address key programs. -. CAS Latency 1, 2, 3 -. Burst Length {1, 2, 4, 8 & Full page)


    OCR Scan     		PDF KM44S4020AT KM44S4020A 44S4020A 44-TS0P2-400F 44-TSOP2-400R 0Q3b25& 71142 a

    Untitled

    Abstract: No abstract text available
    Text: LINEAR INTEGRATED CIRCUIT KA8601C VOICE SWITCHED SPEAKER PHONE WITH SPEECH NETWORK The KA8601C is a monolithic integrated circuit for use in high perfor­ mance speaker phone system. The KA8601C consist of speaker phone and speech network. Speaker phone includes attenuators, amplifiers, level detectors, attenuator


    OCR Scan     		PDF KA8601C KA8601C 7RL4142

    Untitled

    Abstract: No abstract text available
    Text: KMM5322100BKU DRAM Module ELECTRONICS KMM53221OOBKU/BKUG Fast Page Mode 2Mx32 DRAM SIMM, 5V, 2K Refresh, using 2Mx8 DRAM FEATURES GENERAL DESCRIPTION • Part Identification The Samsung KMM5322100BKU is a 2M bit x 32 - KMM5322100BKU 2048 cycles/32 ms Ref, SOJ, Solder


    OCR Scan     		PDF KMM5322100BKU KMM53221OOBKU/BKUG 2Mx32 KMM5322100BKU cycles/32 KMM5322100BKUG cydes/32 28-pin

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KM732V599A/L 32Kx32 Synchronous SRAM 32K x 3 2 - Bit Synchronous Pipelined Burst SRAM FEATURES GENERAL DESCRIPTION • • • • • • • • • • • T he K M 7 32 V 5 99 A /L is a 1 ,0 4 8 ,5 7 6 -b it Synchronous S ta tic R and o m A c c e s s M em ory d es ig n e d fo r high


    OCR Scan     		PDF KM732V599A/L 32Kx32

    KM48S8030AT

    Abstract: REF04 KM48S8020AT
    Text: KM48S8020AT SDRAM ELECTRONICS 4M x 8Bit x 2 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply. • LVTTL/SSTL_3 Class II compatible with multiplexed address. • Dual banks operation. • MRS cycle with address key programs.


    OCR Scan     		PDF KM48S8020AT KM48S8020A/KM48S8021A KM48S8020AT) KM48S8030AT REF04 KM48S8020AT

    Z359

    Abstract: rb414 7-it4142
    Text: KM 29V 3 2 00 0 T S Flash ELEC TRO NIC S 4M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 4M +128K Dit x 8bit The KM29V32000TS/RS is a 4M(4,194,304)xB bit NAND Flash memory with a spare 128K(131,072)x8 bit. Its NAND


    OCR Scan     		PDF KM29V32000TS 250us Z359 rb414 7-it4142