Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b?E D WË 7 T b 4 m 2 D017bm KM611001 330 • SnGK CMOS SRAM 1MX1 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35ns max. • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS) : 2mA (max.)
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D017bm
KM611001
KM611001P/J-20:
130mA
KM611001P/J-25:
110mA
KM611001P/J-35:
100mA
KM611001P:
28-pin
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C1204B
Abstract: t2g memory
Text: KM416C1204BJ CMOS DRAM 1M x16B it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
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KM416C1204BJ
16Bit
C1204B
t2g memory
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Untitled
Abstract: No abstract text available
Text: KM44C16104AK CMOS DRAM ELECTRONICS 1 6 M x 4 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Access time -5, -6, or -7 ,
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KM44C16104AK
16Mx4
16Mx4,
512Kx8)
7Rb414E
0D343bl
00343b2
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Untitled
Abstract: No abstract text available
Text: K M 4 16 C 2 5 6 D J ELECTRONICS CMOS DRAM 256K X 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time
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256Kx16
16C256DJ
40SOJ
KM416C256DJ
7Rb414H
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Untitled
Abstract: No abstract text available
Text: KMM37 2 V 4 0 0 B K D R A M Mo d u l e ELECTRO NICS KMM372V400BK/BS / KMM372V41OBK/BS Fast Page Mode 4Mx72 DRAM DIMM with ECC, 4K & 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES • Part Identification The Samsung KMM372V40 1 0B is a 4M bit x 72 Dynamic RAM high density memory module. The
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KMM37
KMM372V400BK/BS
KMM372V41OBK/BS
4Mx72
KMM372V40
KMM372V400BK
cycles/64ms
300mil
KMM372V41OBK
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TS 4142
Abstract: FS2J SCO-101 SF 129 C D037 KS7301B Camera AF microcontroller lrj b3 SSD controller IC
Text: KS7301B DIGITAL CAMERA PROCESSOR GENERAL DESCRIPTION KS7301B is a CMOS IC designed for Digital Camcorder System. This Processor is Compatible tor NTSC/PAL & Hiband/Normal Camcorder System. FEATURES - Luminance & Chroma Signal Procession Built in Timing Generator
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KS7301B
KS7301B
16bit*
160-QFP-2424
SADR32
SADR40
20Bit)
SADR41
SADR42
TS 4142
FS2J
SCO-101
SF 129 C
D037
Camera AF microcontroller
lrj b3
SSD controller IC
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Untitled
Abstract: No abstract text available
Text: R r e fi^ in & r / KM6161002B/BL, KM6161002BI/BLI CMOS SRAM 6 4 K x 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION Fast Access Time 8,10,12*‘ Max. •• Low Power Dissipation The KM6161002B/BL is a 1,048,576-bit high-speed Static Ran
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KM6161002B/BL,
KM6161002BI/BLI
KM6161002B/BL
576-bit
003bL74
44-SOJ-400
44-TSOP2-400F
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b7E D • ?Tbm42 KM41V4000BLL GGlS7fi4 ÔE2 CMOS DRAM 4M x 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41V4000BLL is a high speed CMOS 4,194,304 bit x 1 Dynamic Random Access Memory. Its
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Tbm42
KM41V4000BLL
KM41V4000BLL
KM41V4000BLL-7
130ns
KM41V4000BLL-8
150ns
KM41V4000BLL-10
100ns
180ns
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LNK5000
Abstract: SDE5000
Text: SSP5000 DSP ELECTRONICS Samsung is a pioneer in the DSP core approach, which is a high performing and flexible family of DSP core based ASDSP Application Specifics Digital Signal Processor . The DSP core architecture and instruction set are designed sim plicity and flexibility. The DSP core contains only the m ost essential DSP function blocks. Because all internal
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SSP5000
LNK5000
SDE5000
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