Untitled
Abstract: No abstract text available
Text: Flow sensor Immersion sensor with integrated processor FCS-G1/2A4P-LIX-H1141/D037 • Flow sensor for liquid media ■ Calorimetric principle ■ Adjustment via potentiometer ■ LED band ■ 3-wire DC, 21…26 VDC ■ 4…20 mA analog output ■ Plug-in device, M12 x 1
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FCS-G1/2A4P-LIX-H1141/D037
150cm/s
26VDC
2013-07-13T18
D-45472
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18f24k22
Abstract: PIC18f45k22 example C18 codes pic18F26K22 example C codes pic18F44K22 PIC18F45K22 PIC18f46k22 example C18 codes i2c pin diagram of PIC18f45k22 pin diagram of PIC18LF45k22 embedded microcontroller PIC18FXXK22 PIC18 example C18 codes spi
Text: PIC18 L F2X/4XK22 Data Sheet 28/40/44-Pin, Low-Power, High-Performance Microcontrollers with nanoWatt XLP Technology 2010 Microchip Technology Inc. Preliminary DS41412B Note the following details of the code protection feature on Microchip devices: •
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PIC18
F2X/4XK22
28/40/44-Pin,
DS41412B
DS41412B-page
18f24k22
PIC18f45k22 example C18 codes
pic18F26K22 example C codes
pic18F44K22
PIC18F45K22
PIC18f46k22 example C18 codes i2c
pin diagram of PIC18f45k22
pin diagram of PIC18LF45k22 embedded microcontroller
PIC18FXXK22
PIC18 example C18 codes spi
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EL50P
Abstract: CD45278 CD4528 15-V CD4527B c32h
Text: HARRIS rarj rÿ i S E M I C O N D SE C T O R B 43D5271 D037blS 7 HARRIS CMOS BCD Rate Multiplier H ig h -V o ltag e T y p e s {20 *V olt Rating • C D 4 5 2 7 B is a lo w p o w e r 4 -b it d ig i tal rate m u ltip lie r th a t p ro vid e s an o u tp u tpulse rate w h ic h is the c lo c k in p u t-p u ls e rate
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D037blS
CD45278
20-Volt
CD4527B
EL50P
CD4528
15-V
c32h
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Untitled
Abstract: No abstract text available
Text: 52E D H = 7 *7fn • 7=^237 S C S -1 H O M S O N L' Iiu r a m « D037Sbb OTT ■ SGTH s fi ^ hohson M 27C512 CMOS 512K 64K x 8 UV EPROM and OTP ROM ■ VERY FAST ACCESS TIME: 80ns ■ COMPATIBLE WITH HIGH SPEED MICRO PROCESSORS, ZERO WAIT STATE ■ LOW POWER “CMOS” CONSUMPTION:
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D037Sbb
27C512
M27C512
FDIP28W
PDIP28
PLCC32
PTS028
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Untitled
Abstract: No abstract text available
Text: b2E » • N E C b427525 D037b4ci b72 W N E C E PHOTO DIODE ELECTRONICS INC / NDL5200 OPTICAL FIBER C O M M U N IC A TIO N S Ge PHOTO DIODE DESC R IPT IO N N D L 5 2 0 0 Germ anium Photo diode is designed for a detector o f long wavelength fiber transm ission systems.
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b427525
D037b4c
NDL5200
b427SES
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633sb
Abstract: No abstract text available
Text: fl235bOS D037b47 7 SIEG □ M K T Capacitors SIEMENS A KT IE N G E S E L L S C H A F M7E D B 32520 .B 32529 ft~ O S l7-o M etalized polyester film capacitors in accordance w ith D IN 44112 VR = 6 3 to 6 3 0 Vdc W ith quality a sse ssm e n t according to C E C C 30401-043, edition 1, June 1983.
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fl235bOS
D037b47
633sb
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m8334
Abstract: No abstract text available
Text: fl235bOS D037b47 7 SIEG M K T Capacitors □ SIEMENS A K T I E N G E S E L L S C H A F M7E D B 32520 .B 3 2 5 2 9 ft~OS l7-o M etalized polyester film capacitors in accordance w ith D IN 44112 VR = 6 3 to 6 3 0 Vdc W ith quality a sse ssm e n t according to C E C C 30401-043, edition 1, June 1983.
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fl235bOS
D037b47
m8334
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2N4381
Abstract: PN4342 2N5021 "P-Channel JFETs" 2N3331 2N3820 2n5462 PN4360 T-39-01
Text: NATL SEMICOND DISCRETE HE » | ^501130 D03711Ü 1 | "I P-Channel JFETs CL * T-39-01 II o o o o o o o o o o o o iiiii 8 o o o o o cm IS §§888 m co £ £ o o o o o o O O O O O O o iflio in io u m m w o o o TT7TT7 777777 o|~ Ç - * o^sS ifllflÖOOO 1 1 I I I I
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b501130
T-39-01
2N4381
PN4342
2N5021
"P-Channel JFETs"
2N3331
2N3820
2n5462
PN4360
T-39-01
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cd45148
Abstract: CD4514B CD4515B MC14515 gd451 mc14514 15-V transistor T-67
Text: HARRIS SEMICOND SECTOR MME ]> m M302 271 D037SÛE 7 ^ 6 - r - z 7 'M A S f - Z f CD4514B, CD4515B Types ¡J3 H A R R IS CMOS 4-Bit Latch/4-to-16 Line Decoders Features: Strobed input latch Inh ib it control 100% tested for quiescent current at 20 V Maximum input current o f 1 ¿iA at 18 V
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M3DE271
D037SÃ
CD4514B,
CD4515B
Latch/4-to-16
20-Volt
CD4514B
cd45148
MC14515
gd451
mc14514
15-V
transistor T-67
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Untitled
Abstract: No abstract text available
Text: HITACHI/ NCU/MPU blE D • L4 ^ b 2 0 4 D0372fl4 BflM B I H I T 3 HITACHI 14 H8/300 FAM H8/311 (*3) H8/322 H8/323 H 8/324 H8/325 H8/326 ROM 10K 8K 16K 24K 32K 8K RAM 256B 256B 512B IK IK 256B EEPRO M 8K - - - - - D u al P o rt R A M - - - - - - E P R O M D e v ic e
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D0372fl4
H8/300
H8/311
H8/322
H8/323
H8/325
H8/326
Converter-16
80-pin
00372flfl
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Siemens MKT
Abstract: No abstract text available
Text: fl235bOS D037b47 7 SIEG □ MKT Capacitors SIEMENS AKTIENGESELLSCHAF M7E D B 32520 .B 32529 ft~ O S l7-o Metalized polyester film capacitors in accordance w ith DIN 44112 VR = 63 to 630 Vdc With quality assessment according to CECC 30401-043, edition 1, June 1983.
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fl235bOS
D037b47
Siemens MKT
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crystal HCJ
Abstract: cd4521 crystal hcj 30 HCJ crystal HCJ-24 CD4521B CD4521B* "HARRIS" CD4521B* HARRIS
Text: HARRIS SEtlICOND SECTOR 44E I> BB 4302271 D037b01 T 2 ] - ¿ 7 ŒHAS f 5 ' Z 3 - n CD4521B Types H A R R I S C M O S 24-Stage F re q u e n cy D ivider FU N CTIO N A L DIAGRAM H ig h -V o lta g e T y p e s 20-Volt R ating Features: • R e s e t d is a b le s the R C o s c illa to r fo r low p o w e r s ta n d b y co n d itio n
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M302271
Q037b01
CD4521B
24-Stage
20-Volt
Vand25Â
CD4521BH.
crystal HCJ
cd4521
crystal hcj 30
HCJ crystal
HCJ-24
CD4521B* "HARRIS"
CD4521B* HARRIS
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SILICON SMALL-SIGNAL DICE
Abstract: No abstract text available
Text: MOTOROLA SC {D IO DES /OPTO} 34 SILICON SMALL-SIGNAL TRANSISTOR DICE continued D I b3fc725S D037TÌD 34C 37990 T- 3 7 " ( S ' 2C3762 DIE NO. — PNP LINE SOURCE — DSL60 This die provides performance similar to that of the following device types: (SÌ 2N3762
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b3fc725S
D037T
DSL60
2C3762
2N3762
2N3763
2N3764
2N3765
SILICON SMALL-SIGNAL DICE
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CD40218
Abstract: CD40210 CD4021B 4021B 0g3735
Text: HARRIS SEMÏCON] SECTOR MME- » • M3GE571 D0373Sb T H H A S 09-05 CM OS 8-Stage Static Shift Registers High-Voltage Types 20-Volt Bating) CD4014B: Synchronous Parallel or Serial Input/Serial Output CD4021B: Asynchronous Parallel Input or Synchronous Serial Input/Serial Output
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M3GE571
D0373Sb
20-Volt
CD4014B:
CD4021B:
CD4014B
CD4021B
2744IHI
CD4014BH
CD402IBH
CD40218
CD40210
4021B
0g3735
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LC 300-S
Abstract: 2N6717 MPS6717
Text: NATL S EM I C O N D H E DISCRETE D • bS01130 D0375b3 I 4 I | ' National Semiconductor Jl A 2N6717 I Ml - ro T'3 3 'OS M PS6717 T O -2 J 7 llllll BC TO -226AE TL/G/10100-8 TL/G/10100-4 NPN General Purpose Amplifier Electrical Characteristics ta = 25°c unless otherwise noted
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bS01130
D0375b3
2N6717
MPS6717
TUG/10100-8
O-226AE
TL/G/10100-4
MPS6717
LC 300-S
2N6717
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B6103
Abstract: B6102
Text: fl235bOS D037b47 7 S IE G M K T Capacitors □ SIEMENS A K T I E N G E S E L L S C H A F M7E D B 32520 .B 3 2 5 2 9 ft~OS l7-o M etalized polyester film capacitors in accordance w ith D IN 44112 VR = 6 3 to 6 3 0 Vdc W ith quality a sse ssm e n t according to C E C C 30401-043, edition 1, June 1983.
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fl235bOS
D037b47
B6103
B6102
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DIODE T53
Abstract: NDL4103A b427525 NDL4103 T53 diode
Text: INECE b42?525 D037MbS TS3 L2E D LIGHT EMITTING DIODE N E C NDL4103A ELECTRONICS INC 8 5 0 nm O PTIC AL FIBER C O M M U N IC A T IO N S AIGaAs LIGHT EMITTING DIODE DESCRIPTION NDL4103A is an AIGaAs double heterostructure light emitting diode, especially designed for a light source fo r optical fiber
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D037MbS
NDL4103A
NDL4103A
b427525
00374b?
DIODE T53
NDL4103
T53 diode
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TIS90
Abstract: MPS6566 TIS97
Text: NATL SEMICOND DISCRETE 22E D • bS01130 D03777M 7 ■ NPN General Purpose Transistors by Ascending Vceo (continued) • H,e Ft (MHz) Min Vceo (V) VCbo(V) Min Min Min Max (mA/V) PN5816 TIS90 TIS92 TIS97 TN2218A TN2219A 40 40 40 40 40 40 50 40 40 100 100
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bS01130
D03777M
PN5816
TIS90
TIS92
TIS97
TN2218A
TN2219A
2N2270
2N2586
MPS6566
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2N2210
Abstract: TIS92 TN2218A transistor 2N2210 2N3827 PN3694 TIS90 2N2270 2N2586 2N5962
Text: NATL SEMICOND DISCRETE 5SE D • bS01130 D037774 7 ■ NPN General Purpose Transistors by Ascending Vceo (continued) Vceo(V) Vcbo (V) Min Min Min Max (mA/V) PN5816 TIS90 TIS92 TIS97 TN2218A TN2219A 40 40 40 40 40 40 50 40 40 100 100 100 250 40 100 200 300
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bS01130
D037774
PN5816
TIS90
TIS92
TIS97
TN2218A
O-237
TN2219A
2N2210
transistor 2N2210
2N3827
PN3694
2N2270
2N2586
2N5962
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C6104
Abstract: C3684 c1474 C3104
Text: fl235bOS D037b47 7 M K T Capacitors S IE G □ SIEMENS A KT IE N G E S E L L S C H A F M7E D B 32520 .B 3 2 5 2 9 ft~ O S l 7 - o M etalized polyester film capacitors in accordance w ith D IN 44112 VR = 6 3 to 6 3 0 Vdc W ith quality a sse ssm e n t according to C E C C 30401-043, edition 1, June 1983.
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fl235bOS
D037b47
C6104
C3684
c1474
C3104
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MJ3029
Abstract: MJ3011 MJ7261 MJ9000 2N3902 MJ3010 MJ411 2N5157 2N6307 Motorola MJ-43
Text: MOTOROL A SC {D IODES/OPT O} 6367255 3M MOTOROLA SC DE |t.3b?5S5 D037TSS CDIODES/OPTO 34C SILICON POWER TRANSISTOR DICE continued) 37955 T '3 3 2C6545 DIE NO. — NPN LINE SOURCE — PL500.366 This die provides performance equal to or better than that of
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D037TSS
PL500
2C6545
2N3902
2N5157
2N5241
2N6306
2N6307
2N6308
2N6544
MJ3029
MJ3011
MJ7261
MJ9000
MJ3010
MJ411
2N6307 Motorola
MJ-43
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2269H
Abstract: No abstract text available
Text: TOSHIBA THMY7216C1EG-80H TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7216C1EG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408FT DRAMs and an unbuffer on a printed circuit board.
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THMY7216C1EG-80H
216-WORD
72-BIT
THMY7216C1EG
TC59S6408FT
72-bit
THMY7216C1EG)
2269H
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Untitled
Abstract: No abstract text available
Text: IN STR t5 -COPTO} DlfJû'ifcilTSb 8961726 TEXAS INSTR COPTO 0G37D27 . 62C 37027 7"-33-/3 TIPL753, TIPL753A N-P-N SILICON POWER TRANSISTORS 1982 - REVISED OCTOBER 1984
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0G37D27
TIPL753,
TIPL753A
TIPL753
TIPL753A
0037Q3M
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TCK-1000
Abstract: D038 toshiba M7
Text: TO SH IBA THM Y6480F1 BEG-80 TEN TA TIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388, 6 O8-W O RD B Y 64-BIT SYN CH R O N O U S DRAM M ODULE D ESCRIPTIO N The THMY6480F1BEG is a 8,388,608-word by 64-bit synchronous dynamic RAM module consisting of eight TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.
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Y6480F1
BEG-80
64-BIT
THMY6480F1BEG
608-word
TC59S6408BFT
64-bit
THMY6480F1
TCK-1000
D038
toshiba M7
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