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    7N90Q Search Results

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    7N90Q Price and Stock

    IXYS Corporation IXFH7N90Q

    MOSFET N-CH 900V 7A TO247AD
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    DigiKey IXFH7N90Q Tube 30
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    Mouser Electronics IXFH7N90Q
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    IXYS Corporation IXFT7N90Q

    MOSFETs 7 Amps 900V 1.5W Rds
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    Mouser Electronics IXFT7N90Q
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    IXYS Integrated Circuits Division IXFT7N90Q

    MOSFET DIS.7A 900V N-CH TO268(D3PAK) HIPERFET SMT
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    Ozdisan Elektronik IXFT7N90Q 4
    • 1 $35.45691
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    7N90Q Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs Q-Class IXFH 7N90Q IXFT 7N90Q VDSS ID25 RDS on trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C; RGS = 1 MW


    Original     		PDF 7N90Q 7N90Q O-247 O-268 O-268AA

    7n90

    Abstract: 7n90q
    Text: HiPerFETTM Power MOSFETs Q-Class IXFH 7N90Q IXFT 7N90Q VDSS ID25 RDS on = 900 V = 7A = 1.5 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF 7N90Q O-247 O-268 O-268 728B1 7n90 7n90q

    7n90q

    Abstract: 7n90
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs Q-Class IXFH 7N90Q IXFT 7N90Q VDSS ID25 RDS on trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C; RGS = 1 MW


    Original     		PDF 7N90Q O-247 O-268 7n90q 7n90

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs Q-Class IXFH 7N90Q IXFT 7N90Q VDSS ID25 RDS on = 900 V = 7A = 1.5 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF 7N90Q O-247 O-268 O-247) O-268 728B1

    C1162

    Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
    Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


    Original     		PDF O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1162 C1280 26n60 60N25 C1328 120N20 C1146 C1104 C1158

    h bridge ups circuit schematic diagram

    Abstract: IXDP630 application note 3 phase ups schematic diagram resistors 1k ohm IXDP630 IXDP631 schematic diagram UPS ix6r11s3 SCHEMATIC POWER SUPPLY WITH IGBTS Panasonic ic "18-pin"
    Text: EV6R11 IX6R11 HALF BRIDGE DRIVER Evaluation Board Introduction Features • Single chip for driving high/low side MOSFETs / IGBTs • High to low side isolation of 600V • Common-mode dv/dt immunity of greater than 50V/nanosecond • Undervoltage lockout


    Original     		PDF EV6R11 IX6R11 IXDP630 IXDP631 IXDD414 IXFK90N20Q 0A/200V h bridge ups circuit schematic diagram IXDP630 application note 3 phase ups schematic diagram resistors 1k ohm schematic diagram UPS ix6r11s3 SCHEMATIC POWER SUPPLY WITH IGBTS Panasonic ic "18-pin"

    Untitled

    Abstract: No abstract text available
    Text: EV6R11 IX6R11 HALF BRIDGE DRIVER Evaluation Board Introduction Features • Single chip for driving high/low side MOSFETs / IGBTs • High to low side isolation of 600V • Common-mode dv/dt immunity of greater than 50V/nanosecond • Undervoltage lockout


    Original     		PDF EV6R11 IX6R11 IXDP630 IXDP631 IXDD414 IXFK90N20Q 0A/200V

    C1146

    Abstract: C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60
    Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


    Original     		PDF O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1146 C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60

    7n90

    Abstract: L1047
    Text: □IXYS Advanced Technical Information IXFH 7N90Q IXFT 7N90Q HiPerFET Power MOSFETs Q-Class Symbol TestConditions V DSS Tj = 25°C to 150°C 900 V VDGR Tj = 25°C to 150°C; RGS = 1 M£i 900 V VGS V GSM Continuous ±20 V Transient ±30 V ^D25 Tc = 25°C


    OCR Scan     		PDF 7N90Q 7N90Q 7n90 L1047