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    7N90 Search Results

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    7N90 Price and Stock

    Taiwan Semiconductor TSM7N90CI-C0G

    MOSFET N-CH 900V 7A ITO220AB
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    DigiKey TSM7N90CI-C0G Tube 1,964 1
    • 1 $3.2
    • 10 $2.204
    • 100 $3.2
    • 1000 $1.28425
    • 10000 $1.28425
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    STMicroelectronics STF7N90K5

    MOSFET N-CH 900V 7A TO220FP
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    DigiKey STF7N90K5 Tube 930 1
    • 1 $3.12
    • 10 $3.12
    • 100 $3.12
    • 1000 $1.05382
    • 10000 $0.96838
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    Avnet Americas STF7N90K5 Bulk 14 Weeks 1,000
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    • 1000 $0.96838
    • 10000 $0.92226
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    Mouser Electronics STF7N90K5 670
    • 1 $2.3
    • 10 $1.29
    • 100 $1.2
    • 1000 $1
    • 10000 $0.968
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    STMicroelectronics STF7N90K5 670 1
    • 1 $2.25
    • 10 $1.26
    • 100 $1.18
    • 1000 $1.04
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    TME STF7N90K5 1
    • 1 $2.39
    • 10 $2.16
    • 100 $1.9
    • 1000 $1.48
    • 10000 $1.42
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    Avnet Silica STF7N90K5 15 Weeks 50
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    EBV Elektronik STF7N90K5 15 Weeks 50
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    STMicroelectronics STD7N90K5

    MOSFET N-CH 900V 7A DPAK
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    DigiKey STD7N90K5 Digi-Reel 619 1
    • 1 $3.23
    • 10 $2.101
    • 100 $3.23
    • 1000 $1.09503
    • 10000 $1.09503
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    STD7N90K5 Cut Tape 619 1
    • 1 $3.23
    • 10 $2.101
    • 100 $3.23
    • 1000 $1.09503
    • 10000 $1.09503
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    STD7N90K5 Reel 2,500
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    Avnet Americas STD7N90K5 Reel 14 Weeks 2,500
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    • 10000 $0.97615
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    Mouser Electronics STD7N90K5 2,682
    • 1 $2.85
    • 10 $1.96
    • 100 $1.39
    • 1000 $1.12
    • 10000 $1
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    STMicroelectronics STD7N90K5 2,682 1
    • 1 $2.79
    • 10 $1.92
    • 100 $1.36
    • 1000 $1.12
    • 10000 $1.12
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    TME STD7N90K5 1
    • 1 $2.37
    • 10 $2.13
    • 100 $1.69
    • 1000 $1.57
    • 10000 $1.41
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    NexGen Digital STD7N90K5 1
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    Avnet Silica STD7N90K5 517,500 15 Weeks 2,500
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    Chip1Stop STD7N90K5 Cut Tape 2,100
    • 1 $2.21
    • 10 $1.84
    • 100 $1.43
    • 1000 $1
    • 10000 $0.977
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    EBV Elektronik STD7N90K5 15 Weeks 2,500
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    STMicroelectronics STP7N90K5

    MOSFET N-CH 900V 7A TO220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey STP7N90K5 Tube 441 1
    • 1 $3.09
    • 10 $3.09
    • 100 $3.09
    • 1000 $1.04019
    • 10000 $0.95375
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    Avnet Americas STP7N90K5 Tube 14 Weeks 1,000
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    • 1000 $0.95375
    • 10000 $0.90833
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    Mouser Electronics STP7N90K5 1,000
    • 1 $2.27
    • 10 $1.27
    • 100 $1.18
    • 1000 $0.971
    • 10000 $0.953
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    STMicroelectronics STP7N90K5 1,000 1
    • 1 $2.23
    • 10 $1.25
    • 100 $1.16
    • 1000 $0.98
    • 10000 $0.98
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    Avnet Silica STP7N90K5 15 Weeks 50
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    EBV Elektronik STP7N90K5 15 Weeks 50
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    onsemi FQA7N90

    MOSFET N-CH 900V 7.4A TO3P
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FQA7N90 Tube
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    7N90 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs Q-Class IXFH 7N90Q IXFT 7N90Q VDSS ID25 RDS on trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C; RGS = 1 MW


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    PDF 7N90Q 7N90Q O-247 O-268 O-268AA

    7n90

    Abstract: 7n90q
    Text: HiPerFETTM Power MOSFETs Q-Class IXFH 7N90Q IXFT 7N90Q VDSS ID25 RDS on = 900 V = 7A = 1.5 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


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    PDF 7N90Q O-247 O-268 O-268 728B1 7n90 7n90q

    7n90

    Abstract: utc7n90 power mosfet 900v
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N90 Preliminary Power MOSFET 900V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 7N90 is an N-channel mode Power FET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology specializes in allowing a


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    PDF QW-R502-475 7n90 utc7n90 power mosfet 900v

    7n90q

    Abstract: 7n90
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs Q-Class IXFH 7N90Q IXFT 7N90Q VDSS ID25 RDS on trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C; RGS = 1 MW


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    PDF 7N90Q O-247 O-268 7n90q 7n90

    7N90

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N90 Power MOSFET 7A, 900V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 7N90 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology specializes in allowing a


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    PDF 17pFat QW-R502-475 7N90

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N90 Power MOSFET 7A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N90 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology specializes in allowing a


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    PDF QW-R502-475

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary 7N90-MK6 Power MOSFET 7A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N90-MK6 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology specializes in allowing


    Original
    PDF 7N90-MK6 7N90-MK6 O-220 QW-R205-049

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N90 Preliminary Power MOSFET 7A, 900V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 7N90 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology specializes in allowing a


    Original
    PDF QW-R502-475

    7n90

    Abstract: 7N90L-T3P-T
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N90 Power MOSFET 7A, 900V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 7N90 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology specializes in allowing a


    Original
    PDF QW-R502-475 7n90 7N90L-T3P-T

    7n90

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N90 Power MOSFET 7A, 900V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 7N90 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology specializes in allowing a


    Original
    PDF QW-R502-475 7n90

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs Q-Class IXFH 7N90Q IXFT 7N90Q VDSS ID25 RDS on = 900 V = 7A = 1.5 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original
    PDF 7N90Q O-247 O-268 O-247) O-268 728B1

    C1162

    Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
    Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


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    PDF O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1162 C1280 26n60 60N25 C1328 120N20 C1146 C1104 C1158

    h bridge ups circuit schematic diagram

    Abstract: IXDP630 application note 3 phase ups schematic diagram resistors 1k ohm IXDP630 IXDP631 schematic diagram UPS ix6r11s3 SCHEMATIC POWER SUPPLY WITH IGBTS Panasonic ic "18-pin"
    Text: EV6R11 IX6R11 HALF BRIDGE DRIVER Evaluation Board Introduction Features • Single chip for driving high/low side MOSFETs / IGBTs • High to low side isolation of 600V • Common-mode dv/dt immunity of greater than 50V/nanosecond • Undervoltage lockout


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    PDF EV6R11 IX6R11 IXDP630 IXDP631 IXDD414 IXFK90N20Q 0A/200V h bridge ups circuit schematic diagram IXDP630 application note 3 phase ups schematic diagram resistors 1k ohm schematic diagram UPS ix6r11s3 SCHEMATIC POWER SUPPLY WITH IGBTS Panasonic ic "18-pin"

    Untitled

    Abstract: No abstract text available
    Text: EV6R11 IX6R11 HALF BRIDGE DRIVER Evaluation Board Introduction Features • Single chip for driving high/low side MOSFETs / IGBTs • High to low side isolation of 600V • Common-mode dv/dt immunity of greater than 50V/nanosecond • Undervoltage lockout


    Original
    PDF EV6R11 IX6R11 IXDP630 IXDP631 IXDD414 IXFK90N20Q 0A/200V

    7n90

    Abstract: L1047
    Text: □IXYS Advanced Technical Information IXFH 7N90Q IXFT 7N90Q HiPerFET Power MOSFETs Q-Class Symbol TestConditions V DSS Tj = 25°C to 150°C 900 V VDGR Tj = 25°C to 150°C; RGS = 1 M£i 900 V VGS V GSM Continuous ±20 V Transient ±30 V ^D25 Tc = 25°C


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    PDF 7N90Q 7N90Q 7n90 L1047

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


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    PDF

    7N90FI

    Abstract: 4N80FI 8n80 TP20N 8N80F 9N80FI 4N90F y 4m TSD4M450V 5N90
    Text: SELECTION GUIDE - BY VOLTAGE V BR DSS (V ) ^D Sfon) * ? max Id (A) Package Type iD(max) Ptot (A) (W ) (Q ) g ts C iss min Page (S ) max (pF) * 1000 0 .7 7 0 9 .0 IS O T O P TSD 14N 100V 1 4 .0 310 8 .0 7000 1000 0 .7 7 0 9 .0 IS O T O P TSD 17N 100V 1 7 .0


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    PDF TP40N STP45N 05LFI Z11FI TP30N STK22N STP25N 7N90FI 4N80FI 8n80 TP20N 8N80F 9N80FI 4N90F y 4m TSD4M450V 5N90