Marking 7n6 Mosfet
Abstract: 7n6 diode marking 7n6 ZXMN6A07F ZXMN6A07FQTA tr/transistor 7n6
Text: A Product Line of Diodes Incorporated ZXMN6A07F 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS Max RDS(on) 60V 250mΩ @ VGS= 10V 350mΩ @ VGS= 4.5V Max ID TA = 25°C (Note 7) 1.4A 1.2A Description This MOSFET utilizes a unique structure that combines the benefits
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ZXMN6A07F
AEC-Q101
DS33547
Marking 7n6 Mosfet
7n6 diode
marking 7n6
ZXMN6A07F
ZXMN6A07FQTA
tr/transistor 7n6
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Marking 7n6 Mosfet
Abstract: marking 7n6 7n6 diode zxmn6a07f
Text: ZXMN6A07F 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS Max RDS(on) 60V 250mΩ@ VGS= 10V 350mΩ @ VGS= 4.5V Max ID TA = 25°C (Note 7) 1.4A 1.2A Description This MOSFET utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed, making it ideal for
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ZXMN6A07F
AEC-Q101
DS33547
Marking 7n6 Mosfet
marking 7n6
7n6 diode
zxmn6a07f
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LTC4098-3.6
Abstract: A20-LCD15.6 SXA-01GW-P0.6
Text: Technische Information / technical information IGBT-Module IGBT-modules IFS75B12N3E4_B39 MIPAQ base Modul mit Trench/Feldstopp IGBT4, größerer Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diode and current
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IFS75B12N3E4
428654F4
D3265
ECFC24
B32DC
CD3289
ECFC26
B32DC6
C36B3
1231423567896AB
LTC4098-3.6
A20-LCD15.6
SXA-01GW-P0.6
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7n6 TRANSISTOR
Abstract: Marking 7n6 TRANSISTOR transistor 7n6 07n60 Marking 7n6 Mosfet 7n6 diode H07N60 H07N60E H07N60F marking code PB
Text: HI-SINCERITY Spec. No. : MOS200604 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No. : 1/5 MICROELECTRONICS CORP. H07N60 Series H07N60 Series Pin Assignment Tab N-Channel Power Field Effect Transistor 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate
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MOS200604
H07N60
O-220AB
183oC
217oC
260oC
10sec
H07N60E,
7n6 TRANSISTOR
Marking 7n6 TRANSISTOR
transistor 7n6
07n60
Marking 7n6 Mosfet
7n6 diode
H07N60E
H07N60F
marking code PB
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ZXMN6A07F
Abstract: ZXMN6A07FTA ZXMN6A07FTC 18a diode sot23 18a sot23 Marking 7n6 Mosfet
Text: ZXMN6A07F 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY BR DSS=60V; RDS(ON)=0.4 D=1.05A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power
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ZXMN6A07F
ZXMN6A07FTA
ZXMN6A07FTC
uni00
ZXMN6A07F
ZXMN6A07FTA
ZXMN6A07FTC
18a diode sot23
18a sot23
Marking 7n6 Mosfet
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ZXMN6A07Z
Abstract: ZXMN6A07ZTA
Text: ZXMN6A07Z 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS= 100V; RDS(ON)= 0.4 ID= 1.9A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This
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ZXMN6A07Z
ZXMN6A07ZTA
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0018g
Abstract: ZXMN6A07Z ZXMN6A07ZTA Marking 7n6 Mosfet
Text: ZXMN6A07Z 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=60V; RDS(ON)=0.4⍀; ID=1.9A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage,
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ZXMN6A07Z
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0018g
ZXMN6A07Z
ZXMN6A07ZTA
Marking 7n6 Mosfet
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ZXMN6A07F
Abstract: ZXMN6A07FTA ZXMN6A07FTC Marking 7n6 Mosfet
Text: ZXMN6A07F 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=60V; RDS(ON)=0.4 ID=1A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This
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ZXMN6A07F
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ZXMN6A07FTC
ZXMN6A07F
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ZXMN6A07FTC
Marking 7n6 Mosfet
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Untitled
Abstract: No abstract text available
Text: ZXMN6A07F 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=60V; RDS(ON)=0.4⍀ D=1.05A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power
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ZXMN6A07F
ZXMN6A07FTA
ZXMN6A07FTC
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Marking 7n6 Mosfet
Abstract: marking 7n6 18a diode sot23 7n6 diode ZXMN6A07F
Text: ZXMN6A07F 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 60V; RDS(ON) = 0.300 ID = 1A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This
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ZXMN6A07F
ZXMN6A07FTA
ZXMN6A07FTC
7N6-04
Marking 7n6 Mosfet
marking 7n6
18a diode sot23
7n6 diode
ZXMN6A07F
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ZXMN6A07F
Abstract: Marking 7n6 Mosfet
Text: ZXMN6A07F 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 60V; RDS(ON) = 0.300 ID = 1.2A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This
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ZXMN6A07F
ZXMN6A07FTA
ZXMN6A07FTC
ZXMN6A07F
Marking 7n6 Mosfet
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Marking 7n6 Mosfet
Abstract: No abstract text available
Text: ZXMN6A07Z 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS= 60V; RDS(ON)= 0.300 ID= 2.2A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This
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ZXMN6A07Z
ZXMN6A07ZTA
Marking 7n6 Mosfet
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ZXMN6A07Z
Abstract: ZXMN6A07ZTA 7n6 diode
Text: ZXMN6A07Z 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS= 60V; RDS(ON)= 0.300 ID= 2.2A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This
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ZXMN6A07Z
ZXMN6A07ZTA
ZXMN6A07Z
ZXMN6A07ZTA
7n6 diode
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Marking 7n6 Mosfet
Abstract: 7n6 diode
Text: ZXMN6A07Z 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS= 60V; RDS(ON)= 0.300 ID= 1.9A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This
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ZXMN6A07Z
ZXMN6A07ZTA
SEMI-04
Marking 7n6 Mosfet
7n6 diode
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marking 7n6
Abstract: TS16949 ZXMN6A07Z ZXMN6A07ZTA
Text: ZXMN6A07Z 60V SOT89 N-channel enhancement mode mosfet Summary RDS on (⍀) ID (A) 0.250 @ VGS= 10V 2.5 0.350 @ VGS= 4.5V 2.1 V(BR)DSS 60 Description D This new generation trench MOSFET from Zetex utilizes a unique structure combining the benefits of low on-state resistance with fast
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ZXMN6A07Z
ZXMN6A07ZTA
D-81541
marking 7n6
TS16949
ZXMN6A07Z
ZXMN6A07ZTA
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Untitled
Abstract: No abstract text available
Text: ZXMN6A07F 60V SOT23 N-channel enhancement mode mosfet Summary V BR DSS 60 RDS(on) (⍀) ID (A) 0.250 @ VGS= 10V 1.4 0.350 @ VGS= 4.5V 1.2 Description D This new generation trench MOSFET from Zetex utilizes a unique structure combining the benefits of low on-state resistance with fast
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ZXMN6A07F
D-81541
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marking 7n6
Abstract: 7n6 SOT23 TS16949 ZXMN6A07F ZXMN6A07FTA regulator 59
Text: ZXMN6A07F 60V SOT23 N-channel enhancement mode mosfet Summary RDS on (⍀) ID (A) 0.250 @ VGS= 10V 1.4 0.350 @ VGS= 4.5V 1.2 V(BR)DSS 60 Description D This new generation trench MOSFET from Zetex utilizes a unique structure combining the benefits of low on-state resistance with fast
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ZXMN6A07F
ZXMN6A07FTA
D-81541
marking 7n6
7n6 SOT23
TS16949
ZXMN6A07F
ZXMN6A07FTA
regulator 59
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7n6 TRANSISTOR
Abstract: logic innovations ipe asi board transistor 7n6 T7903 VDE reg. -Nr 0001 2768B c programming examples fifo asi cypress
Text: Preliminary Data Sheet April 1997 m i c r o e l e c t r o n i c s group Lucent Technologies Bell Labs Innovations T7903 ISA Multiport Wide Area Connection ISA-MWAC Device Features • Three wide area connection ports. Each port can be configured as a basic rate ISDN TE or NT or as
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T7903
DS97-161
DS96-084ISDN
AY97-001ISDN)
7n6 TRANSISTOR
logic innovations ipe asi board
transistor 7n6
VDE reg. -Nr 0001
2768B
c programming examples
fifo asi cypress
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