what is technical report
Abstract: TR17-1 BGB707L7ESD marking swp 9
Text: B GB 707L 7ESD BGB707L 7ESD L N A Circui t with lo wQ I nduc to rs fo r 3. 3 G Hz-3 .8 GHz Wi MAX Applicati on s Technic al Rep ort T R 171 Revision: Rev. 1.0 Date: 16. December 2009 Author: Dr. Chih-I Lin RF and Protecti on Devi c es Edition 16. December 2009
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BGB707L
BGB707L7
BGB707L7ESD
TR171,
TR171
what is technical report
TR17-1
marking swp 9
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RF LNA 10 GHz
Abstract: SDMB BGB707L7ESD marking swp 9
Text: B GB 707L 7ESD BGB707L 7ESD L N A Circui t with lo wQ I nduc to rs fo r 2. 3 G Hz-2 .7 GHz W L A N / Wi M A X / S D M B A p p l i c a t i o n s Technic al Rep ort T R 170 Revision: Rev. 1.0 Date: 14. December 2009 Author: Dr. Chih-I Lin RF and Protecti on Devi c es
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BGB707L
BGB707L7
TR170,
TR170
BGB707L7ESD
RF LNA 10 GHz
SDMB
marking swp 9
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2SA1279
Abstract: 2SC3239 IC H 111
Text: TOSHIBA -CDISCRETE/OPTOl ~5Í DË”! T D T 7ESD □□□7bt,D ñ J 9097250 T O S HIBA bbL C D I S C R E T E /O P T O 07660 - 2 3 - b9 2SC3239 S IL IC O N NPN E P IT A X IA L TYPE PCT PROCESS) INDUSTRIAL APPLICATIONS HIGH CURRENT SWITCHING APPLICATIONS.
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2SA1279
2SC3239
100X100x2mmAi
0X50X2
IC H 111
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Untitled
Abstract: No abstract text available
Text: T O S H I B A -CDISCRETE/OPTOJ 9097250 TOSHIBA tfoÀìtìht D ^ | t O T 7ESD D O l L b ö T CDI S C R E T E / O P T O 99 D 16689 DT'S^-lj SEMICONDUCTOR T O S H I B A FIELD EFFECT T R A N SISTOR TECHNICAL DATA SILICON N C H A N N E L MOS TYPE 2 S K 5 2 6
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100nA
10/in
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Untitled
Abstract: No abstract text available
Text: TOSHIBA {DISCRETE/OPTO} TT DE| t 99D 17086 9097250 TOSHIBA DISCRETE/OPTO D T 7ESD 0D17Qflb fl | DT-'4\-a\ TLU Y I6 3 , TLU Y I64 GaAsP YELLOW LIGHT EMISSION 3. I mm DIAMETER(TI) FEATURES! . ULTRA-BRIGHT I . All Plastic Mold Type TLUY163 : Light Yellow Transparent Lens
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0D17Qflb
TLUY163
TLUY164
20inA
lFa20mA
TLDYX63
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Untitled
Abstract: No abstract text available
Text: TOSHIBA b7 {DISCRETE/OPTO} 9097250 TOSHIBA DISCRETE/OPTO DeT | t O,î 7ESD ODPTETb 1 * D T 'O S 'O Q 67C 0 92 96 Silicon Epitaxial Planar Typei. 1N4608 Diode TENTATIVE Unit in ram COMMUNICATION A ND INDUSTRIAL APPLICATIONS. HIGH VOLTAGE, ULTRA HIGH SPEED SWITCHING APPLICATIONS.
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1N4608
100mA
250mA
350mA
450mA
500mA
500mA,
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SP9960
Abstract: costas loop Biphase mark decoder ST7SS
Text: PLESSEY SEMICONDUCTORS TS 7220513 » Ë | 7ESD513 ODDbSbG S | ~ P L E S S E Y SEMICONDUCTORS % S e m D T-7S-S? 95D 06560 E ^ c w X _PRELIMINARY INFORMATION PLEASE CH E C K FOR LA TE ST ISSUE SP9920 50MBIT M AN CH ESTER DECOD ER WITH IDLE C O D E D ETECT
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7ESD513
SP9920
50MBIT
SP9920
20M-50M
SP9960
costas loop
Biphase mark decoder
ST7SS
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Untitled
Abstract: No abstract text available
Text: "PLESSEY SEMICONDUCTORS TS D Ê| 7ESDS13 ODOb?aS 7 2 2 0 5 1 3 P L E S S E Y SEMIC O N D U C T O R S fl 95D 06725 PLESSEY V T-ÿér2!T PRELIMINARY INFORMATION Semiconductors. M V 6 1 9 0 2 1K x 9 DIPSTICK" FIFO The MV61902 is one of a new generation of RAM-based
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7ESDS13
MV61902
10MHz
MV61902s
2200mW
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Untitled
Abstract: No abstract text available
Text: TOSHIBA -CDISCRETE/OPTOJ 9097250 TOSHIBA DISCRETE/OPTO 2SD1069 Sb DE | C1DC]7ESD 0 D D 7 Ö S S “’ ” V ö r —Ö785 5 Ö ? SILICON NPN DOUBLE DIFFUSED TYPE (PCT PROCESS) Unit in nun TV HORIZONTAL DEFLECTION OUTPUT APPLICATIONS. la S M A X . w HIGH VOLTAGE SWITCHING APPLICATIONS.
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2SD1069
1000s
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C10C equivalent
Abstract: 2SD1069 AC75 C10C
Text: 9097250 TOSHIBA DE | C10C]7ESD 0007055 1 Sh TOSHIBA O I S C R E T E / O P T O > <D IS C R E T E / O P T O 2SD1069 0 7"~ 3 3 -// 5bZ~ÖTB5 5 SILICON NPN DOUBLE DIFFUSED TYPE PCT PROCESS) Unit in nun TV HORIZONTAL DEFLECTION OUTPUT APPLICATIONS. 1Q.3MAX.
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2SD1069
C10C equivalent
2SD1069
AC75
C10C
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Untitled
Abstract: No abstract text available
Text: TOSHIBA -CDISCRETE/OPTOJ Ti □ □ 1 7 4 Sa 9097250 TOSHIBA s DISCRETE/OPTO 990 17452 D T-Hi-n TLP543J, TLP545J GaAs IR E D & P H O T O - T H Y R I STOR Unit in ma The TOSHIBA TLP543J consists of a photthyristor optically coupled to a gallium
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TLP543J,
TLP545J
TLP543J
TLP545J
150mA
2500Vrms
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H 48 zener diode
Abstract: Toshiba 02BZ2.2 02BZ2.2 zener h 48 zener diode 4.7V current rating Zener Diode frequency Diode 02bz3.9 zener diode si 18 02BZ4.7 opto 101
Text: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA b7 <DI SC R E T E / O PT O> *• ~ dF| ^ 7 2 5 0 67C 09264 Silicon Planar Type DQGiam □ f 0/"-//"O7 i 02BZ2.2-02BZ4.7 Zener Diode Unit in mm LOW VOLTAGE REGULATION AND LOW REFERENCE VOLTAGE APPLICATIONS. FEATURES:
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02BZ2
2-02BZ4
02BZ4
H 48 zener diode
Toshiba 02BZ2.2
02BZ2.2
zener h 48
zener diode 4.7V current rating
Zener Diode frequency
Diode 02bz3.9
zener diode si 18
02BZ4.7
opto 101
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Untitled
Abstract: No abstract text available
Text: TOSHIBA OISCRETE/OPTOJ 9097250 TOSHIBA TT D I S C R E TE/OPTO dF | T D T V a S D DülbflEO S 1 ~ 99D 16820 D~p-39-i3 TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR Y T F 4 5 0 SILICON N CHANNEL MOS TYPE TECHNICAL DATA ( Tl-MOS E) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.
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p-39-i3
100nA
250uA
250yA
SYM30L
00A/us
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Untitled
Abstract: No abstract text available
Text: TIM5964-4A FEATURES: • HIGH POWER PldB = 36.5 dBm at 5.9 GHz to 6.4 GHz ■ BROAD BAND INTERNALLY MATCHED ■ HIGH GAIN GidB = 8.5 dB at 5.9 GHz to 6.4 GHz ■ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta = 25V CHARACTERISTICS Output Power
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TIM5964-4A
2-11D1B)
TDT7250
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Untitled
Abstract: No abstract text available
Text: TOSHIBA { D I S C R E T E / O P T 0> ^ 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA SEMICONDUCTOR TECHNICAL DATA 99D DE j t u t r-diiU □□lL.T4cf O 16949 D T -M 3-ÄS- TOSHIBA GTR MODULE MG 1 0 G 4 G M 1 SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS.
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VQS--10V
EGA-MG10G4GM1-4
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plessey
Abstract: zvn1409 G146
Text: PLESSEY SEMICOND/DISCRETE ~^5 DE~| 7520S33 QDG5L37 3 |~~ 7220533 PLESSEY SEMICOND/DISCRETE 95D 05637 T - ^ r - N-channel enhancement mode vertical DMOS FET D ; z r ZVN1409 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown •
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7520S33
QDG5L37
ZVN1409
G-142
7EB0S33
0DDSL41
G-143
7SSDS33
00DSb45
plessey
zvn1409
G146
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Untitled
Abstract: No abstract text available
Text: TOSHIBA -CDISCRETE/OPTO} 9097250 TOSHIBA DISCRETE/OPTO f/aììuha TT DE I TOTVSSO QQlbñbt. 99D 16866 D T -3 = M TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR Y T F 6 2 3 SILICON N CHANNEL MOS TYPE TECHNICAL DATA ( Ti-MOSI) INDUSTRIAL APPLICATIONS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.
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500nA
250gA
00A/us
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vqe 23e
Abstract: 2sc330 2SA1308 2SC3308 33-IJ
Text: St T O S H I B A -CDISCRETL/ÖHTÖ*" 9 0 9 7 2 50 T O S H I B A D IS O R F T F / O P T O 2SA1308 I ” "i 5ôC DÌT| A C H T E S □ □ □ □ 7 3 G Û Ö73Ö8 S IL ICON PNP E P IT A X IA L TYPE {PCT PROCESS HIGH CURRENT SWITCHING APPLICATIONS. Unit in mm
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2SC3308.
2SA1308
lilllllII1III11KIII
vqe 23e
2sc330
2SA1308
2SC3308
33-IJ
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YTF450
Abstract: dp 52
Text: TOSHIBA O I S C R E T E / O P T O ï DE I TDTVaSD □□IbflZO 5 W ~ TT 9097250 TOSHIBA <D ISCRETE/OPTO 99D 16820 DT-3CH3 TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR Y T F 4 5 0 SILICON N CHANNEL MOS TYPE TECHNICAL DATA 71 -MOS I ) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.
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100nA
250uA
250yA
SYM30L
00A/us
YTF450
dp 52
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