design ideas
Abstract: Signal Path Designer
Text: Hierarchical Design Techniques Vijay Gullapalli–Senior Design Consultant, Synopsys Professional Services Kaijian Shi–Principal Consultant, Synopsys Professional Services January 2004 2004 Synopsys, Inc. Hierarchical design flow offers many benefits that can result in improved productivity when designing
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TOSHIBA 1N DIODE
Abstract: No abstract text available
Text: TOSHIBA {DI SC RE TE/ OPTO } "H 9097250 TOSHIBA DISCRETE/OPTO ¿ / o ìh ìh tt DE I T Q T T S S O QOlbñQO O I~~ 99D 16800 TOSHIBA F IE L D SEMICONDUCTOR DT-39-13 E FFE C T TRANSISTOR Ï T F - 2 4 2 SIL IC O N TECHNICAL DATA N CHANNEL MOS-TYPE ( Tl-MOS
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DT-39-13
100nA
250uA
00A/us
TOSHIBA 1N DIODE
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G4PC30F
Abstract: G4PC30 g4pc st igbt driver bt 13b S/BIP/SCB345100/B/30/G4PC30F
Text: International TOR Rectifier PD - 9.1459A PRELIMIN IRG4PC30F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features • Fast: O ptim ized fo r m edium operating frequencies 1-5 kHz in hard sw itching, >20 kH z in resonant m ode . • G eneration 4 IG BT design provides tig hte r
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IRG4PC30F
O-247AC
O-247AC
G4pc30f,
G4PC30F
G4PC30
g4pc
st igbt driver
bt 13b
S/BIP/SCB345100/B/30/G4PC30F
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Untitled
Abstract: No abstract text available
Text: PD 9.1601 International IQR Rectifier IRG4BC20FD PRELIMINARY Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode .
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IRG4BC20FD
O-22QAB
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Untitled
Abstract: No abstract text available
Text: P D - 9.1270F International l R Rectifier IRF7509 PRELIMINARY HEXFET3 Power MOSFET • • • • • • • Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Very Small SOIC Package Low Profile <1.1 mm Available in Tape & Reel
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1270F
IRF7509
7355B
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Untitled
Abstract: No abstract text available
Text: International I R Rectifier pd-9.m65a IRG4 PC4 0 S PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter
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O-247AC
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Untitled
Abstract: No abstract text available
Text: PD 9.1451A International IOR Rectifier IRG4BC30FD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast CoPack IGBT • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode .
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IRG4BC30FD
T0-220AB
5SM52
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smd diode marking 47s
Abstract: S41 rectifier smd marking 47s smd code marking sot23 Micro6 Package smd diode marking JJ sot23 G0A marking SMD MOSFET N Z4 lm 5532
Text: PD 9.1414A International IO R Rectifier IR L M S 6702 PRELIMINARY H EXFET Pow er M O S F E T • Generation V Technology • Micro6 Package Style • Ultra Low Rds on • P-Channel MOSFET V q ss = -2 0 V R DS(on) = 0 . 2 0 Q Description Fifth Generation HEXFETs from International Rectifier
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F0041
Abstract: IRF7314
Text: International IGR Rectifier PD - 9.1436A IRF7314 PRELIMINARY HEXFET Power M O SFET • • • • • Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Fully Avalanche Rated V DSS = -20V ^DS on = 0.0580 Description Fifth Generation HEXFETsfrom international Rectifier
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IRF7314
F0041
IRF7314
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IRG4PC40S
Abstract: No abstract text available
Text: International I R Rectifier PD - 9.1465A IRG4PC40S PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter
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IRG4PC40S
O-247AC
O-247AC
IRG4PC40S
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Untitled
Abstract: No abstract text available
Text: 4ASS4S2 0D14b6b ATS « I N R International E5R Rectifier HEXFET Power MOSFET • • • • • • • PD-9.899 IRF610S INTERNATIONAL R E C T IF IE R Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avaianche Rated Fast Switching
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0D14b6b
IRF610S
SMD-220
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switching TRANSISTOR mosfet 30V 40A
Abstract: IRGB440U
Text: International IlftRl Rectifier PD - 9.782A IRGB440U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency cun/e
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IRGB440U
O-220AB
O-220
switching TRANSISTOR mosfet 30V 40A
IRGB440U
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ld33a
Abstract: No abstract text available
Text: TOSHIBA DISCRETE/OPTO 45E D • ^0^7230 0017^72 □ MTOSLJ TOSHIBA FIELD EFFEC T TRANSISTOR SILICON N C H A N N EL MOS T Y P E (ir - YTFP153 MOSI) ! INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR
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YTFP153
0-06fi
IDSS-250uA
VDS-60V
250gA
Ta-25Â
R-33A
IDR-33A
ld33a
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Untitled
Abstract: No abstract text available
Text: TOSHIBA {DISCRETE/OPTO} TÎ 9097250 TOSHIBA DISCRETE/OPTO DE | T m 7 2 S D 99D 16896 T O S H IB A SEMICONDUCTOR F IE L D EFFEC T D ~p- 3 e)-1 T R A N S IS T O R Y T F 8 3 2 S IL IC O N TECHNICAL DATA N C H A N N EL MOS T Y P E (Æ -M O S IE ) INDUSTRIAL APPLICATIONS
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250uA
00A/gs
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IRG4PC30UD
Abstract: No abstract text available
Text: International I R Rectifier P D 9.1462A IRG4PC30UD PRELIMINARY INSULATED GATE BIPOLAR TR A N SIST O R WITH ULTRAFAST SO FT R E C O V E R Y DIODE Features UltraFast CoPack IGBT • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200
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IRG4PC30UD
O-247AC
IRG4PC30UD
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Untitled
Abstract: No abstract text available
Text: PD - 9.1448B International I R Rectifier IRG4BC20U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter
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1448B
IRG4BC20U
TQ-220AB
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Untitled
Abstract: No abstract text available
Text: PD - 9.1240C International IGR Rectifier IRF7304 HEXFEf Power MOSFET • • • • • • • Generation V Technology Ultra Low On-Resistance Dual P-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Voss = -20V
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1240C
IRF7304
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1RF7309
Abstract: 1rf730 AN-994 IRF7309 making cys
Text: International S Rectifier P D - 9 .1 2 4 3 B IRF7309 PRELIMINARY H E X F E T Pow er M O S F E T i • • • • • • • Generation V Technology Ultra Low O n-R esistance Dual N and P Channel Mosfet Surface Mount Available in T a p e & Reel Dynam ic dv/dt Rating
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1243B
IRF7309
1RF7309
1rf730
AN-994
making cys
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I628
Abstract: No abstract text available
Text: International IOR Rectifier IN S U LA TE D GATE pd-9.i628 IRG4PC30W PRELIMINARY BIPOLAR TR AN SISTO R Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve
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IRG4PC30W
I628
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IRF7319
Abstract: 49AA
Text: International IG R Rectifier P D -9.1606 IRF7319 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fglly Avalanche Rated * -CHANNEL UOSFE* ^ "P -O L D I SI I Gt a r-*- i—.h N-Cti P-Ch
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IRF7319
IRF7319
49AA
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rr180
Abstract: 75337 75337S 75337P
Text: in te rrii HUF75337G3, HUF75337P3, HUF75337S3S J u n e 1999 D a ta S h e e t 75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUF75337G3,
HUF75337P3,
HUF75337S3S
HUF75337S3S
AN7260.
rr180
75337
75337S
75337P
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F1G21
Abstract: IRF7317
Text: International IOR Rectifier P D -9.1568 IRF7317 PRELIMINARY HEXFET Power MOSFET • • • • • Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier
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IRF7317
makingA-S41
F1G21
IRF7317
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Untitled
Abstract: No abstract text available
Text: PD - 9.1413C International Iö R Rectifier IRLMS5703 PRELIMINARY HEXFET Power MOSFET • G eneration V Technology • • • Microô Package Style Ultra Low Rds on P -C hannel M O S F E T Voss = -30V ^D S (o n) = Description 0.20Q Fifth Generation HEXFETsfrom International Rectifier
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1413C
IRLMS5703
SS45B
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Untitled
Abstract: No abstract text available
Text: TOSHIBA {DI SCRE TE /O PT O} Ti D eT | TCn7eS0 OOlböVM 99D 16874 9097250 TOSHIBA DISCRETE/OPTO TO SH IBA “^/oòfulu SEMICONDUCTOR F IE L D DT-SR-ll E F F E C T TRA N SISTO R Y T F 6 3 3 S IL IC O N « TECHNICAL DATA CHANNEL MOS TYPE (Z T -M O S I) INDUSTRIAL APPLICATIONS
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500nA
250uA
00A/us
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