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    KEMET Corporation C317C101J1G5TA

    CAP CER 100PF 5% 100V C0G RADIAL
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    KEMET Corporation C317C101J2G5TA7301

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    KEMET Corporation C317C101K2G5TA7301

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    KEMET Corporation C317C101K1R5TA

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    KEMET Corporation C317C101G2G5TA

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    7C101 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    7C1019BV33-10 Cypress Semiconductor 128K x 8 Static RAM Original PDF
    7C1019BV33-12 Cypress Semiconductor 128K x 8 Static RAM Original PDF
    7C1019BV33-15 Cypress Semiconductor 128K x 8 Static RAM Original PDF

    7C101 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    transistor c1016

    Abstract: c1016 CY7C1016 C10161
    Text: fax id: 1057 1CY 7C10 16 ADVANCED INFORMATION 7C1016 256K x 4 Static RAM Features output enable OE , and three-state drivers. The device has an automatic power-down feature that significantly reduces power consumption when deselected. • High speed — tAA = 10 ns


    Original     		CY7C1016 C1016 7C1016 transistor c1016 CY7C1016 C10161 PDF

    CY7C1019

    Abstract: No abstract text available
    Text: 1CY 7C10 19 ADVANCED INFORMATION 7C1019 128K x 8 Static RAM Features • High speed — tAA = 10 ns • CMOS for optimum speed/power • Center power/ground pinout • Automatic power-down when deselected • Easy memory expansion with CE and OE options


    Original     		CY7C1019 CY7C1019 7C1019 PDF

    ATPA

    Abstract: 7130SA100P 24l01 7C263/4-35C 7164S15Y cy9122-25 7133SA35J 7142sa55 7130sa55p cy2149-45c
    Text: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2147-35C CY7C147-35C CY7C147-45C CY7C147-35C CY91L22-35C CY7C122-35C CY2147-45C CY2147-35C CY7C148-35C CY7C148-25C+ CY91L22-45C CY93L422AC CY2147-45C CY7C147-45C CY7C148-45C CY7C148-35C


    Original     		CY2147-35C CY7C147-35C CY7C147-45C CY91L22-35C CY7C122-35C CY2147-45C CY7C148-35C CY7C148-25C+ ATPA 7130SA100P 24l01 7C263/4-35C 7164S15Y cy9122-25 7133SA35J 7142sa55 7130sa55p cy2149-45c PDF

    7C241

    Abstract: 7c471 7C121 7C820K 7C221 7C390K 6861K 90K110 5C56 12C-390K
    Text: METAL OXIDE VARISTORS TNR Chip Type For Direct Surface Mounting 5C and 7C Type ?RATINGS Operating Temperature Range: -40K+125C Storage Temperature Range: -50K+150C Maximum Applied Voltage (Continuous) AC. (Vrms) DC. (V) 18 14 22 17 26 20 30 25 37 30 44


    Original     		TNR5C220K TNR5C270K TNR5C330K TNR5C390K TNR5C470K TNR5C560K TNR5C680K TNR5C820K TNR5C101K TNR5C121K 7C241 7c471 7C121 7C820K 7C221 7C390K 6861K 90K110 5C56 12C-390K PDF

    Untitled

    Abstract: No abstract text available
    Text: 7C1019D PRELIMINARY 1-Mbit 128K x 8 Static RAM Functional Description[1] Features • Pin- and function-compatible with 7C1019B • High speed — tAA = 10 ns • CMOS for optimum speed/power • Low active power The 7C1019D is a high-performance CMOS static RAM


    Original     		CY7C1019D CY7C1019B CY7C1019D PDF

    CY7C1018

    Abstract: CY7C1018DV33
    Text: PRELIMINARY 7C1018DV33 1-Mbit 128K x 8 Static RAM Functional Description[1] Features • Pin- and function-compatible with 7C1018CV33 • High speed — tAA = 8 ns • Low Active Power — Icc = 75 mA @ 8 ns • Low CMOS Standby Power The 7C1018DV33 is a high-performance CMOS static


    Original     		CY7C1018DV33 CY7C1018CV33 300-mil-wide 32-pin CY7C1018DV33 CY7C1018 PDF

    CY7C1019B

    Abstract: CY7C1019B-10VC CY7C1019B-12VC CY7C1019V33 7C1019B-15
    Text: C1019V33 7C1019B 128K x 8 Static RAM Features • High speed — tAA = 10 ns • CMOS for optimum speed/power • Center power/ground pinout • Automatic power-down when deselected • Easy memory expansion with CE and OE options • Functionally equivalent to 7C1019V33


    Original     		C1019V33 CY7C1019B CY7C1019V33 CY7C1019B CY7C1019B-10VC CY7C1019B-12VC CY7C1019V33 7C1019B-15 PDF

    CY7C1019

    Abstract: CY7C1019BN CY7C1019BN-12VC CY7C1019BN-12ZC CY7C1019BN-12ZXC CY7C1019BN-15VC
    Text: 7C1019BN 128K x 8 Static RAM Features Functional Description • High speed The 7C1019BN is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable CE , an active LOW Output Enable (OE), and three-state drivers. This


    Original     		CY7C1019BN CY7C1019BN CY7C1019 CY7C1019 CY7C1019BN-12VC CY7C1019BN-12ZC CY7C1019BN-12ZXC CY7C1019BN-15VC PDF

    CY7C1016

    Abstract: A0231 A2429 C10161
    Text: 7c1006: 11-25-91 Revision: April 10, 1995 ADVANCED INFORMATION CMOS static RAM organized as 262,144 words by 4 bits. Easy memory expansion is D provided by an active LOW chip enable Ċ CE , an active LOW output enable (OE), and threeĆstate drivers. The device has an


    Original     		7c1006: CY7C1016 C1016-2 C1016-1 7C1016-10 7C1016-12 7C1016-15 A0231 A2429 C10161 PDF

    CY7C101A

    Abstract: CY7C102A
    Text: 7C101A PRELIMINARY Functional Description Features D D D D D D D The 7C101A and CY7C102A are highĆ performance CMOS static RAMs orgaĆ nized as 262,144 x 4 bits with separate I/O. Easy memory expansion is provided by acĆ tive LOW chip enable CE and threeĆ


    Original     		CY7C101A CY7C101A CY7C102A PDF

    CY7C1019

    Abstract: CY7C1019-10VC CY7C1019-12VC CY7C1019L-10VC
    Text: PRELIMINARY 7C1019 128K x 8 Static RAM Features Writing to the device is accomplished by taking chip enable CE and write enable (WE) inputs LOW. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location specified on the address pins (A0 through A16).


    Original     		CY7C1019 CY7C1019 CY7C1019-10VC CY7C1019-12VC CY7C1019L-10VC PDF

    CY7C1011

    Abstract: No abstract text available
    Text: PRELIMINARY 7C1011 128K x 16 Static RAM Features BLE is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0 through A16). If byte high enable (BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A16).


    Original     		CY7C1011 I/O15) CY7C1011 PDF

    EPM5128LC

    Abstract: IDT CYPRESS CROSS REFERENCE clocks epm5064lc-1 EPM5128LC-1 EPM5064LC EPM5128LC-2 EPM5128GI EPM5128JC-1 8464c 5962-8871309
    Text: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2148-35C CY21L48-35C CY7C168A-35C CY7C168A-25C 5962-8871309XX 5962-89839112X CY2148-35C CY7C148-35C CY7C168A-45M CY7C168A-35M+ 5962-8871310RX 5962-8983913RX CY2148-35M CY7C148-35M CY7C169A-35C


    Original     		CY2148-35C CY21L48-35C CY7C168A-35C CY7C168A-25C 5962-8871309XX 5962-89839112X CY7C148-35C CY7C168A-45M CY7C168A-35M+ EPM5128LC IDT CYPRESS CROSS REFERENCE clocks epm5064lc-1 EPM5128LC-1 EPM5064LC EPM5128LC-2 EPM5128GI EPM5128JC-1 8464c 5962-8871309 PDF

    *7C471

    Abstract: 7c471 7C241 7C221 p03 varistor TNR Varistor TNR9C271K 9C33
    Text: TNR C SERIES ◆ Taping Specification ● The Specifications for TNR C Series B W F E FD0 T FD1 A P1 P3 T2 A Size Code 5C-A 5C-B 7C 9C 12C B P0.1 6.9 6.85 8.3 10.85 12.5 P2 W P0.1 10.4 8.05 10.6 13.0 16.3 Direction of feed F E P0.3 P0.1 16.0 7.5 24.0 Dimensions mm


    Original     		TNR5C220KK470K, TNR5C820KK271K TNR5C560K, TNR12C820KKTNR12C471K) 9C241K 9C221K 9C201K 9C181K 9C151K 9C121K *7C471 7c471 7C241 7C221 p03 varistor TNR Varistor TNR9C271K 9C33 PDF

    CY7C102-35PC

    Abstract: 7C101-35 HO- 21C L7535 2C1012
    Text: CYPRESS SE MI CO NDU CTOR MbE D B 250^5 GOObSflö □ E3CYP 'T - ^ - V b A O ,V ilT ' '-• * •' * ' CYPRESS SEMICONDUCTOR 262,144 x 4 Static RfW RAM with Separate I/O Features Functional Description • H ighspeed — tAA = 25 ns • Ttgnsparent write (7C101


    OCR Scan     		CY7C101 CY7C102 7C101) TheCY7C101 andCY7C102arehigh-per-formance CY7C102â 35LMB CY7C102-45DC CY7C102-35PC 7C101-35 HO- 21C L7535 2C1012 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CYPRESS SEMICONDUCTOR Functional Description • High speed T he C Y 7C101A and CY 7C102A are highperform ance C M O S static R A M s orga­ nized as 262,144 x 4 bits with separate I/O. Easy m em ory expansion is provided by ac­ tive LO W chip enable C E and threestate drivers. B oth devices have an a u to ­


    OCR Scan     		CY7C101A CY7C102A 7C101A) 7C101A 7C102A PDF

    Untitled

    Abstract: No abstract text available
    Text: 7C101A CY7C102A PRELIMINARY CYPRESS SEMICONDUCTOR Features Functional Description • High speed T he C Y 7C101A and CY 7C102A are highp erform ance C M O S static R A M s orga­ nized as 262,144 x 4 bits w ith separate I/O . Easy m em ory expansion is provided by ac­


    OCR Scan     		CY7C101A CY7C102A 7C101A 7C102A 7C101A) PDF

    CY7C101A

    Abstract: CY7C102A 7C101A-12 l3lx
    Text: PRELIMINARY 9 / C Y PR E SS 7C101A CY7C102A 256K x 4 Static RAM with Separate I/O Features Functional Description • High speed The 7C101A and CY7C102A are high­ perform ance CMOS static RAM s orga­ nized as 262,144 x 4 bits with separate I/O. Easy m emory expansion is p rovided by ac­


    OCR Scan     		CY7C101A CY7C102A 7C101A) CY7C102A CY7C101A tdwel161 7C101A 8-00231-A 7C101A-12 l3lx PDF

    CY7C1014

    Abstract: No abstract text available
    Text: V CYPRESS Features • H igh speed — U a = 10 n s • C M O S for optim um speed/pow er • C enter power/ground pinout • A utom atic power-down w hen deselected • TT L -com patible in p u ts and outputs Functional Description The 7C1014 is a high-perform ance


    OCR Scan     		CY7C1014 256Kx 400-mil-wide 7C1014â PDF

    Scans-051

    Abstract: No abstract text available
    Text: fax id: 1050 C Y7C 1019 128Kx 8 Static RAM — tAA = 1 0 ns Writing to the device is accomplished by taking chip enable CE and write enable (WE) inputs LOW. Data on the eight I/O pins (l/O0 through l/0 7) is then written into the location speci­ fied on the address pins (A0 through A 16).


    OCR Scan     		128Kx Scans-051 PDF

    10125DC

    Abstract: 7C102
    Text: y PRELIMINARY r CYPRESS SEMICONDUCTOR 262,144 x 4 Static R/W RAM with Separate I/O Features F unctional D escription • High speed T h eC Y 7 C 1 0 l and C Y 7C 102are high-per­ form ance C M O S static R A M s organized as 262,144 x 4 bils with separate I/O. flasy


    OCR Scan     		CY7C101 CY7C102 7C102 CY7C101, 7C101 10125DC PDF

    7C101

    Abstract: No abstract text available
    Text: 7C101A CY7C102A PRELIMINARY 256Kx 4 Static RAM with Separate I/O Features Functional Description • High speed The 7C101Aand CY7C102A are highperformance CMOS static RAMs orga­ nized as 262,144 x 4 bits with separate I/O. Easy memory expansion is provided by ac­


    OCR Scan     		CY7C101A CY7C102A 256Kx CY7C101Aand CY7C102A 7C101 PDF

    CY7C1011-20VC

    Abstract: No abstract text available
    Text: 7C1011 1 2 8 K x 1 6 Static RAM BLE is LOW, then data from I/O pins (l/O 0 through l/0 7), is written into the location specified on the address pins (A 0 through A 16). If byte high enable (BHE) is LOW, then data from I/O pins (l/ 0 8 through l/0 15) is written into the location speci­


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 7C1018V33 7C1019V33 CYPRESS 128K x 8 Static RAM pins l/O0 through l/0 7 is then written into the location speci­ fied on the address pins (A q through A-ie)- Features • High speed Reading from the device is accomplished by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing Write


    OCR Scan     		CY7C1018V33 CY7C1019V33 PDF