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    CY7C101 Price and Stock

    Flip Electronics CY7C1019DV33-10ZSXI

    IC SRAM 1MBIT PARALLEL 32TSOP II
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY7C1019DV33-10ZSXI Tray 64,000 100
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    • 100 $6.14
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    Flip Electronics CY7C1010DV33-10VXIT

    IC SRAM 2MBIT PARALLEL 36SOJ
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY7C1010DV33-10VXIT Reel 41,000 200
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    Flip Electronics CY7C1019D-10VXI

    STANDARD SRAM, 128KX8, 10NS, CMO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY7C1019D-10VXI Tube 16,955 200
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    Flip Electronics CY7C1011CV33-12ZSXE

    IC SRAM 2MBIT PARALLEL 44TSOP II
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY7C1011CV33-12ZSXE Tray 11,846 100
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    • 100 $5.99
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    Flip Electronics CY7C1010DV33-10ZSXIT

    IC SRAM 2MBIT PARALLEL 44TSOP II
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY7C1010DV33-10ZSXIT Reel 11,000 300
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    • 1000 $1.9
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    Find more CY7C101 price and stock on Findchips.com

    CY7C101 Datasheets (271)

    Part ECAD Model Manufacturer Description Curated Type PDF
    CY7C1010DV33 Cypress Semiconductor 2-Mbit (256K x 8)Static RAM Original PDF
    CY7C1010DV33-10VXI Cypress Semiconductor 2-Mbit (256K x 8) Static RAM; Density: 2 Mb; Organization: 256Kb x 8; Vcc (V): 3.0 to 3.6 V; Original PDF
    CY7C1010DV33-10VXI Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 2MBIT 10NS 36SOJ Original PDF
    CY7C1010DV33-10VXIT Cypress Semiconductor 2-Mbit (256K x 8) Static RAM; Density: 2 Mb; Organization: 256Kb x 8; Vcc (V): 3.0 to 3.6 V; Original PDF
    CY7C1010DV33-10VXIT Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 2MBIT 10NS 36SOJ Original PDF
    CY7C1010DV33-10ZSXI Cypress Semiconductor 2-Mbit (256K x 8)Static RAM Original PDF
    CY7C1010DV33-10ZSXI Cypress Semiconductor 2-Mbit (256K x 8)Static RAM Original PDF
    CY7C1010DV33-10ZSXI Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 2MBIT 10NS 44TSOP Original PDF
    CY7C1010DV33-10ZSXIT Cypress Semiconductor 2-Mbit (256K x 8) Static RAM; Density: 2 Mb; Organization: 256Kb x 8; Vcc (V): 3.0 to 3.6 V; Original PDF
    CY7C1010DV33-10ZSXIT Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 2MBIT 10NS 44TSOP Original PDF
    CY7C1011 Cypress Semiconductor 128K x 16 Static RAM Original PDF
    CY7C1011-15VC Cypress Semiconductor 128K x 16 Static RAM Original PDF
    CY7C1011-20VC Cypress Semiconductor 128K x 16 Static RAM Original PDF
    CY7C1011-25ZC Cypress Semiconductor 128K x 16 Static RAM Original PDF
    CY7C1011BV33 Cypress Semiconductor 128K x 16 Static RAM Original PDF
    CY7C1011BV33-12ZC Cypress Semiconductor 128K x 16 static RAM, 12ns Original PDF
    CY7C1011BV33-12ZI Cypress Semiconductor 128K x 16 static RAM, 12ns Original PDF
    CY7C1011BV33-15ZC Cypress Semiconductor 128K x 16 static RAM, 15ns Original PDF
    CY7C1011BV33-15ZI Cypress Semiconductor 128K x 16 static RAM, 15ns Original PDF
    CY7C1011CV33 Cypress Semiconductor 2-Mbit (128K x 16) Static RAM Original PDF
    ...

    CY7C101 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    cy7c1019dv

    Abstract: No abstract text available
    Text: CY7C1019DV33 1-Mbit 128 K x 8 Static RAM 1-Mbit (128 K × 8) Static RAM Features Functional Description • Pin- and function-compatible with CY7C1019CV33 ■ High speed ❐ tAA = 10 ns ■ Low Active Power ❐ ICC = 60 mA @ 10 ns ■ Low CMOS Standby Power


    Original     		PDF CY7C1019DV33 CY7C1019DV33 cy7c1019dv

    transistor c1016

    Abstract: c1016 CY7C1016 C10161
    Text: fax id: 1057 1CY 7C10 16 ADVANCED INFORMATION CY7C1016 256K x 4 Static RAM Features output enable OE , and three-state drivers. The device has an automatic power-down feature that significantly reduces power consumption when deselected. • High speed — tAA = 10 ns


    Original     		PDF CY7C1016 C1016 7C1016 transistor c1016 CY7C1016 C10161

    CY7C1012AV33

    Abstract: O16I
    Text: PRELIMINARY CY7C1012AV33 512K x 24 Static RAM Features power-down feature that significantly consumption when deselected. • High speed — tAA = 10 ns • Low active power — 180 mW max. • Operating voltages of 3.3 +/- 0.3V • 2.0V data retention • Automatic power-down when deselected


    Original     		PDF CY7C1012AV33 CY7C1012AV33 O16I

    CY7C1019

    Abstract: No abstract text available
    Text: 1CY 7C10 19 ADVANCED INFORMATION CY7C1019 128K x 8 Static RAM Features • High speed — tAA = 10 ns • CMOS for optimum speed/power • Center power/ground pinout • Automatic power-down when deselected • Easy memory expansion with CE and OE options


    Original     		PDF CY7C1019 CY7C1019 7C1019

    Untitled

    Abstract: No abstract text available
    Text: CY7C1012DV33 12-Mbit 512 K x 24 Static RAM 12-Mbit (512 K × 24) Static RAM Functional Description Features The CY7C1012DV33 is a high performance CMOS static RAM organized as 512K words by 24 bits. Each data byte is separately controlled by the individual chip selects (CE1, CE2, and CE3).


    Original     		PDF CY7C1012DV33 12-Mbit CY7C1012DV33 I/O15, I/O16â I/O23.

    CY7C1019B

    Abstract: CY7C1019D CY7C1019D-10VXI CY7C1019D-10ZSXI
    Text: CY7C1019D 1-Mbit 128K x 8 Static RAM Functional Description [1] Features • Pin- and function-compatible with CY7C1019B The CY7C1019D is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an


    Original     		PDF CY7C1019D CY7C1019B CY7C1019D 83MHz, 66MHz 40MHz 100MHz, 66MHz, CY7C1019B CY7C1019D-10VXI CY7C1019D-10ZSXI

    CY7C1018BV33

    Abstract: CY7C1018CV33 CY7C1018CV33-10VC CY7C1018CV33-12VC CY7C1018CV33-12VXI CY7C1018CV33-15VXC
    Text: CY7C1018CV33 128K x 8 Static RAM Features device has an automatic power-down feature that significantly reduces power consumption when deselected. • Pin- and function-compatible with CY7C1018BV33 • High speed — tAA = 10 ns • CMOS for optimum speed/power


    Original     		PDF CY7C1018CV33 CY7C1018BV33 300-mil-wide 32-pin CY7C1018CV33 CY7C1018BV33 CY7C1018CV33-10VC CY7C1018CV33-12VC CY7C1018CV33-12VXI CY7C1018CV33-15VXC

    CY7C1012DV33

    Abstract: No abstract text available
    Text: CY7C1012DV33 12-Mbit 512K X 24 Static RAM Functional Description Features • High speed ❐ tAA = 8 ns ■ Low active power ❐ ICC = 225 mA at 8 ns ■ Low CMOS standby power ❐ ISB2 = 25 mA ■ Operating voltages of 3.3 ± 0.3V ■ 2.0V data retention


    Original     		PDF CY7C1012DV33 12-Mbit 119-Ball CY7C1012DV33

    cy7c1019d-10

    Abstract: 30759
    Text: CY7C1019D 1-Mbit 128K x 8 Static RAM Functional Description[1] Features • Pin- and function-compatible with CY7C1019B • High speed — tAA = 10 ns • Low active power — ICC = 60 mA @ 10 ns • Low CMOS standby power • • • • • • • — ISB2 = 3 mA


    Original     		PDF CY7C1019D CY7C1019B CY7C1019B 32-pin 400-Mil CY7C1019D 83MHz, 66MHz 40MHz cy7c1019d-10 30759

    Untitled

    Abstract: No abstract text available
    Text: CY7C1019D PRELIMINARY 1-Mbit 128K x 8 Static RAM Functional Description[1] Features • Pin- and function-compatible with CY7C1019B • High speed — tAA = 10 ns • CMOS for optimum speed/power • Low active power The CY7C1019D is a high-performance CMOS static RAM


    Original     		PDF CY7C1019D CY7C1019B CY7C1019D

    Untitled

    Abstract: No abstract text available
    Text: CY7C1011DV33 2-Mbit 128K x 16 Static RAM Features Functional Description • Pin-and function-compatible with CY7C1011CV33 The CY7C1011DV33 is a high-performance CMOS Static RAM organized as 128K words by 16 bits. • High speed Writing to the device is accomplished by taking Chip Enable


    Original     		PDF CY7C1011DV33 CY7C1011CV33 44-pin 48-ball CY7C1011DV33

    CY7C1018

    Abstract: CY7C1018DV33
    Text: PRELIMINARY CY7C1018DV33 1-Mbit 128K x 8 Static RAM Functional Description[1] Features • Pin- and function-compatible with CY7C1018CV33 • High speed — tAA = 8 ns • Low Active Power — Icc = 75 mA @ 8 ns • Low CMOS Standby Power The CY7C1018DV33 is a high-performance CMOS static


    Original     		PDF CY7C1018DV33 CY7C1018CV33 300-mil-wide 32-pin CY7C1018DV33 CY7C1018

    CY7C1011DV33-10ZSXI

    Abstract: No abstract text available
    Text: CY7C1011DV33 2-Mbit 128K x 16 Static RAM Features Functional Description • Pin-and function-compatible with CY7C1011CV33 • High speed The CY7C1011DV33 is a high-performance CMOS Static RAM organized as 128K words by 16 bits. — tAA = 10 ns • Low active power


    Original     		PDF CY7C1011DV33 CY7C1011CV33 44-pin 48-ball CY7C1011DV33 -10BVI CY7C1011DV33-10ZSXI

    Untitled

    Abstract: No abstract text available
    Text: CY7C1019CV33 1 Mbit 128K x 8 Static RAM Features Functional Description • Temperature Ranges ❐ Industrial: –40°C to 85°C ❐ Automotive-A: –40°C to 85°C The CY7C1019CV33 is a high performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion


    Original     		PDF CY7C1019CV33 CY7C1019CV33

    Untitled

    Abstract: No abstract text available
    Text: CY7C1011CV33 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Features Functional Description • Temperature ranges ❐ Industrial: –40 °C to 85 °C ❐ Automotive-A: –40 °C to 85 °C ❐ Automotive-E: –40 °C to 125 °C The CY7C1011CV33 is a high performance complementary


    Original     		PDF CY7C1011CV33 CY7C1011CV33 I/O15)

    CY7C1019B

    Abstract: CY7C1019B-10VC CY7C1019B-12VC CY7C1019V33 7C1019B-15
    Text: C1019V33 CY7C1019B 128K x 8 Static RAM Features • High speed — tAA = 10 ns • CMOS for optimum speed/power • Center power/ground pinout • Automatic power-down when deselected • Easy memory expansion with CE and OE options • Functionally equivalent to CY7C1019V33


    Original     		PDF C1019V33 CY7C1019B CY7C1019V33 CY7C1019B CY7C1019B-10VC CY7C1019B-12VC CY7C1019V33 7C1019B-15

    Untitled

    Abstract: No abstract text available
    Text: CY7C1011CV33 2-Mbit 128 K x 16 Static RAM 2-Mbit (128 K × 16) Static RAM Functional Description Features The CY7C1011CV33 is a high performance complementary metal oxide semiconductor (CMOS) static RAM organized as 131,072 words by 16 bits. This device has an automatic power


    Original     		PDF CY7C1011CV33 CY7C1011CV33 CY7C1011BV33

    Untitled

    Abstract: No abstract text available
    Text: CY7C1019D 1-Mbit 128 K x 8 Static RAM 1-Mbit (128 K × 8) Static RAM Functional Description [1] Features • Pin- and function-compatible with CY7C1019B ■ High speed ❐ tAA = 10 ns ■ Low active power ❐ ICC = 80 mA @ 10 ns ■ Low CMOS standby power


    Original     		PDF CY7C1019D CY7C1019D

    CY7C1019

    Abstract: CY7C1019BN CY7C1019BN-12VC CY7C1019BN-12ZC CY7C1019BN-12ZXC CY7C1019BN-15VC
    Text: CY7C1019BN 128K x 8 Static RAM Features Functional Description • High speed The CY7C1019BN is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable CE , an active LOW Output Enable (OE), and three-state drivers. This


    Original     		PDF CY7C1019BN CY7C1019BN CY7C1019 CY7C1019 CY7C1019BN-12VC CY7C1019BN-12ZC CY7C1019BN-12ZXC CY7C1019BN-15VC

    Untitled

    Abstract: No abstract text available
    Text: CY7C1012AV33 PRELIMINARY 512K x 24 Static RAM Features Writing the data bytes into the SRAM is accomplished when the chip select controlling that byte is LOW and the write enable input WE input is LOW. Data on the respective input/output (I/O) pins is then written into the location specified


    Original     		PDF CY7C1012AV33 CY7C1012AV33

    Untitled

    Abstract: No abstract text available
    Text: CY7C1012AV33 512K x 24 Static RAM Features Functional Description • High speed ❐ tAA = 8 ns The CY7C1012AV33 is a high-performance CMOS static RAM organized as 512K words by 24 bits. Each data byte is separately controlled by the individual chip selects CE0, CE1, CE2 . CE0


    Original     		PDF CY7C1012AV33 CY7C1012AV33 I/O15, I/O16â I/O23.

    CY7C101A

    Abstract: CY7C102A 7C101A-12 l3lx
    Text: PRELIMINARY 9 / C Y PR E SS CY7C101A CY7C102A 256K x 4 Static RAM with Separate I/O Features Functional Description • High speed The CY7C101A and CY7C102A are high­ perform ance CMOS static RAM s orga­ nized as 262,144 x 4 bits with separate I/O. Easy m emory expansion is p rovided by ac­


    OCR Scan     		PDF CY7C101A CY7C102A 7C101A) CY7C102A CY7C101A tdwel161 7C101A 8-00231-A 7C101A-12 l3lx

    CY7C1014

    Abstract: No abstract text available
    Text: V CYPRESS Features • H igh speed — U a = 10 n s • C M O S for optim um speed/pow er • C enter power/ground pinout • A utom atic power-down w hen deselected • TT L -com patible in p u ts and outputs Functional Description The CY7C1014 is a high-perform ance


    OCR Scan     		PDF CY7C1014 256Kx 400-mil-wide 7C1014â

    Untitled

    Abstract: No abstract text available
    Text: 7C101A: 11-25-91 Revision: Thursday, February 18,1993 CY7C101A CY7C102A k ' Vwt S3 « 3 PRELIMINARY 7J= CYPRESS SEMICONDUCTOR 256K x 4 Static RAM with Separate I/O Features Functional Description • Highspeed — tAA = 12 ns • Transparent write 7C101A


    OCR Scan     		PDF 7C101A: CY7C101A CY7C102A 7C101A) CY7C101Aand CY7C102Aare in982.