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    78-01 DIODE DATA Search Results

    78-01 DIODE DATA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    78-01 DIODE DATA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    smd diode 708

    Abstract: SMD M1B diode M1B Diode smd CD 4938 Silicon Schottky Diode sod123 SMD M1B str 541 BAT93 SCD24 ir 7811
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BAT93 Schottky barrier diode Product specification File under Discrete Semiconductors, SC01 Philips Semiconductors December 1993 Philips Semiconductors Product specification Schottky barrier diode FEATURES • Ultra-fast switching speed


    Original     		PDF BAT93 SCD24 smd diode 708 SMD M1B diode M1B Diode smd CD 4938 Silicon Schottky Diode sod123 SMD M1B str 541 BAT93 SCD24 ir 7811

    4245

    Abstract: SMD M1B BAT56 SMD M1B diode
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BAT56 Schottky barrier diode Preliminary specification File under Discrete Semiconductors, SC01 Philips Semiconductors December 1993 Philips Semiconductors Preliminary specification Schottky barrier diode FEATURES • Low leakage current


    Original     		PDF BAT56 SCD24 4245 SMD M1B BAT56 SMD M1B diode

    Untitled

    Abstract: No abstract text available
    Text: RGA 37A . RGA 37M 49 Reverse Voltage: 50 to 1000 V Features                      !"#$  %  %  & &  &'     * &   %  &  )  +  )  ) % & Mechanical Data          , -.*/ ,


    Original     		PDF

    MSD060

    Abstract: BUK7213-40A
    Text: BUK7213-40A TrenchMOS standard level FET Rev. 01 — 29 January 2004 Product data M3D300 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips General-Purpose Automotive TrenchMOS™ technology.


    Original     		PDF BUK7213-40A M3D300 OT428 MSD060 BUK7213-40A

    Untitled

    Abstract: No abstract text available
    Text: SEMiX 854GB176HDs Absolute Maximum Ratings Symbol Conditions IGBT  - -23 4 6     SEMiX 4s Trench IGBT Modules SEMiX 854GB176HDs Target Data Features                         


    Original     		PDF 854GB176HDs

    Untitled

    Abstract: No abstract text available
    Text: BUK6210-55C N-channel TrenchMOS intermediate level FET Rev. 01 — 7 September 2010 Objective data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been


    Original     		PDF BUK6210-55C

    854GB176HD

    Abstract: No abstract text available
    Text: SEMiX 854GB176HD Absolute Maximum Ratings Symbol Conditions IGBT  - -23 4 6     SEMiX 4 Trench IGBT Modules SEMiX 854GB176HD Target Data Features                               !


    Original     		PDF 854GB176HD 854GB176HD

    Untitled

    Abstract: No abstract text available
    Text: SKiM 601GD126DM Absolute Maximum Ratings Symbol Conditions IGBT ./  78 ./( ; $ %   SKiM 5 SKiM 601GD126DM Preliminary Data Features           & ?=    &  Values Units 0*11 451 $631% 911 : *1 < 41 = > 0+1 $0*+%


    Original     		PDF 601GD126DM

    EI- 33C

    Abstract: No abstract text available
    Text: SEMiX 253GD176HDc Absolute Maximum Ratings Symbol Conditions IGBT  - -01 4 6     SEMiX 33c Trench IGBT Modules SEMiX 253GD176HDc Target Data Features                         


    Original     		PDF 253GD176HDc EI- 33C

    Untitled

    Abstract: No abstract text available
    Text: SEMiX 253GB176HD Absolute Maximum Ratings Symbol Conditions IGBT  - -01 4 6     SEMiX 3 Trench IGBT Modules SEMiX 253GB176HD Preliminary Data Features                         


    Original     		PDF 253GB176HD

    1010 817 D21 B

    Abstract: SDH 209 OQ2535HP OQ2536HP D1432
    Text: INTEGRATED CIRCUITS DATA SHEET OQ2535HP SDH/SONET STM16/OC48 multiplexer Preliminary specification File under Integrated Circuits, IC19 1997 Nov 27 Philips Semiconductors Preliminary specification SDH/SONET STM16/OC48 multiplexer OQ2535HP FEATURES GENERAL DESCRIPTION


    Original     		PDF OQ2535HP STM16/OC48 STM16/OC48 OQ2535HP 32-channel SCA56 427027/100/01/pp20 1010 817 D21 B SDH 209 OQ2536HP D1432

    601GD126DM

    Abstract: SKIM
    Text: SKiM 601GD126DM Absolute Maximum Ratings Symbol Conditions IGBT ./  78 ./( ; $ %   SKiM 5 SKiM 601GD126DM Preliminary Data Features           & ?=    &  Values Units 0*11 451 $631% 911 : *1 < 41 = > 0+1 $0*+%


    Original     		PDF 601GD126DM 601GD126DM SKIM

    Untitled

    Abstract: No abstract text available
    Text: LF PA K PSMN5R9-30YL N-channel 6.1 mΩ 30 V TrenchMOS logic level FET in LFPAK Rev. 01 — 17 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in


    Original     		PDF PSMN5R9-30YL

    450GD126D

    Abstract: SKiM450GD126D
    Text: SKiM 450GD126D Absolute Maximum Ratings Symbol Conditions IGBT 01*  78 01* ; & '   SKiM 5 SKiM 450GD126D Preliminary Data Features                            ! "#$ % &%


    Original     		PDF 450GD126D 450GD126D SKiM450GD126D

    Untitled

    Abstract: No abstract text available
    Text: SEMiX 253GD176HDc Absolute Maximum Ratings Symbol Conditions IGBT  - -01 4 6     SEMiXTM 33c Trench IGBT Modules SEMiX 253GD176HDc Target Data Features                         


    Original     		PDF 253GD176HDc

    Untitled

    Abstract: No abstract text available
    Text: SEMiX 353GB126HD Absolute Maximum Ratings Symbol Conditions IGBT  , ,01 4 6     SEMiXTM 3 Trench IGBT Modules SEMiX 353GB126HD Target Data Features                               !


    Original     		PDF 353GB126HD

    Untitled

    Abstract: No abstract text available
    Text: SEMiX 353GB126HD Absolute Maximum Ratings Symbol Conditions IGBT  , ,01 4 6     SEMiXTM 3 Trench IGBT Modules SEMiX 353GB126HD Target Data Features                               !


    Original     		PDF 353GB126HD

    Untitled

    Abstract: No abstract text available
    Text: SEMiX 253GB176HD Absolute Maximum Ratings Symbol Conditions IGBT  - -01 4 6     SEMiXTM 3 Trench IGBT Modules SEMiX 253GB176HD Target Data Features                               !


    Original     		PDF 253GB176HD

    Untitled

    Abstract: No abstract text available
    Text: SEMiX 353GB126HDs Absolute Maximum Ratings Symbol Conditions IGBT  , ,01 4 6     SEMiXTM 3s Trench IGBT Modules SEMiX 353GB126HDs Target Data Features                         


    Original     		PDF 353GB126HDs

    Untitled

    Abstract: No abstract text available
    Text: SEMiX 353GB126HDs Absolute Maximum Ratings Symbol Conditions IGBT  , ,01 4 6     SEMiXTM 3s Trench IGBT Modules SEMiX 353GB126HDs Target Data Features                         


    Original     		PDF 353GB126HDs

    Untitled

    Abstract: No abstract text available
    Text: SEMiX 253GB176HD Absolute Maximum Ratings Symbol Conditions IGBT  - -01 4 6     SEMiXTM 3 Trench IGBT Modules SEMiX 253GB176HD Target Data Features                               !


    Original     		PDF 253GB176HD

    OF IGBT

    Abstract: DIODE JS
    Text: SKiM 450GD126D Absolute Maximum Ratings Symbol Conditions IGBT 01*  78 01* ; & '   SKiM 5 SKiM 450GD126D Preliminary Data Features                            ! "#$ % &%


    Original     		PDF 450GD126D OF IGBT DIODE JS

    Untitled

    Abstract: No abstract text available
    Text: SEMiX 302GB126HD Absolute Maximum Ratings Symbol Conditions IGBT  , ,01 4 6     SEMiXTM 2 Trench IGBT Modules SEMiX 302GB126HD Target Data Features                               !


    Original     		PDF 302GB126HD

    Untitled

    Abstract: No abstract text available
    Text: SEMITRON INDUSTRIES LTD M3E T> 013700^ G00G173 T Œ S L C B - n -i SERI ES Zener Reference Diode 11V7 Volts Temperature Compensated FEATURES GLASS D07 • Hermetically sealed ■ DC power dissipation 500mW at 25°C FIG. 1 MECHANICAL DATA ■ Case: Hermetically sealed glass case D07


    OCR Scan     		PDF G00G173 500mW DO-35 DO-41 DO-15 DO-201AD