Untitled
Abstract: No abstract text available
Text: Pulse A TE C H N ITR O L C O M PAN Y ww w .pul5eenq.com NOTES: UNLESS OTHERWISE SPECIFIED 12 11 10 1. o o o THIS IS A RoH S COMPLIANT C O M P O N E N T/P R O D U C T . ALL ENGINEERING CHANGES MUST HAVE PRIOR APPROVAL BY THE DESIGN CENTER. PLASTIC HOUSING: THERMOPLASTIC
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0024NL
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Untitled
Abstract: No abstract text available
Text: intel* M2716/M2716M 16K 2K x 8 UV ERASABLE PROM M ilitary m Military Temperature Range • Static Standby Mode M2716M: -55°C to + 125°C (Tc) M2716: —55°C to + 100°C (Tc) ■ Low Power Dissipation of 165 mW Maximum Standby Power ■ 5V ± 10% Vcc ■ Inputs and Outputs TTL Compatible
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M2716/M2716M
M2716M:
M2716:
M2732A
M2716M
M2716
384-bit
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AYAA
Abstract: No abstract text available
Text: AK93C67 Series Wide Vcc 2.5V — 5.5V 4096 bit Serial Electrically Erasable PROM _ F e a tu r e s _ □ ADVANCED CMOS Ez PROM TECHNOLOGY □ READ/WRITE NON-VOLATILE MEMORY - Wide Vcc (2.5V ~ 5.5V) o p e r a t i o n
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AK93C67
/77T77TTi
AYAA
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Untitled
Abstract: No abstract text available
Text: SAW FILTER KF155/S TECHNICAL DATA SPECIFICATIONS FOR SAW FILTER Band pass filters for the receiving RF circuits of pager • High stability and reliability with good performance. • Low insertion loss and deep stop band attenuation for interference. MAXIMUM RATINGS Ta=25°C
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KF155/S
27Typ
73Typ
34Typ
40Typ
fo-100-fo-38
100MHz
210Q//-10
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k1a78
Abstract: 78DM05 kia78dm
Text: SEM IC O N D U C TO R TEC H N IC AL DATA KIA78DM015S/F/PI- KIA78DM050S/F/PI B IPO LA R LIN EA R IN TEG R A TED C IR C U IT 3 TERMINAL LOW DROPOUT VOLTAGE REGULATOR H The K.1A78DM X X X Series are Low Dropout Voltage Regulator p suitable for various electronic equipments.
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KIA78DM015S/F/PI-
KIA78DM050S/F/PI
1A78DM
KIA78DM015S/F/PI-78DM050S/F/PI
KIA78DM033
OT-223)
TQ-220IS)
k1a78
78DM05
kia78dm
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Untitled
Abstract: No abstract text available
Text: bM27S25 004203b ^70 A T A SHEET EC MOS INTEGRATED CIRCUIT /¿PD42S4190, 424190 4 M-BIT DYNAMIC RAM 256K-WORD BY 18-BIT, FAST PAGE MODE, BYTE WRITE MODE DESCRIPTION The //PD42S4190, 424190 are 262 144 w ords by 18 bits dynamic CMOS RAMs. The fast page m ode and byte
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bM27S25
004203b
PD42S4190,
256K-WORD
18-BIT,
//PD42S4190,
PD42S4190
44-pin
40-pin
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ASZ18
Abstract: No abstract text available
Text: H M 5 3 8 1 2 1 J P / Z P - 1 0 / 1 2 / 1 5 — Preliminary 131,072 x 8-Blt Multiport CMOS Video Random Access Memory • DESCRIPTION The HM538121 is a 1-Mbit multiport video RAM equipped with a 128-kword x 8-bit dynamic RAM and a 256-word x 8-bit SAM serial
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HM538121
128-kword
256-word
ASZ18
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Untitled
Abstract: No abstract text available
Text: fl CO M M M 31 F re im a s s to le ra n z O b e r f la c h e S c h u t z v e r m e r k nach D IN 34 F is c h e r E le k t r o n ik 01 D IN IS O 2 7 6 8 m ffi/cherelektronik S 3 M a D s t a b =2:1 D a tu m B e a r b . 28.06.01 z. Anderung K u n d e : 7 7 7 7 7 Fischer Ele ktron ik
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G\Kuehlkoerper\0t\77T77\AJUI0StCKB6A3tl
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NEC uPD 688
Abstract: UPD4217400LG3-A60
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / //PD42S16400L, 4216400L, 42S17400L, 4217400L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE Description The ¿/PD42S16400L, 4216400L, 42S17400L, 4217400L are 4,194,304 words by 4 bits CMOS dynamic RAMs, The
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uPD42S16400L
uPD4216400L
uPD42S17400L
uPD4217400L
/PD42S16400L,
4216400L,
42S17400L,
4217400L
42S17400L
NEC uPD 688
UPD4217400LG3-A60
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Untitled
Abstract: No abstract text available
Text: P R E LIM IN A R Y DATA SH EE T_ MOS INTEGRATED CIRCUIT MC-45V16AD641 16M-WORD BY 64-BIT VIRTUAL CHANNEL SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-45V16AD641 is a 16,777,216 words by 64 bits virtual channel synchronous dynam ic RAM module on which
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MC-45V16AD641
16M-WORD
64-BIT
MC-45V16AD641
uPD4565821
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rft electronica
Abstract: No abstract text available
Text: HM52161 65 Series Preliminary 524,288-word x 16-bit x 2-bank Synchronous Dynamic RAM HITACHI A ll inputs and outputs arc referred to the rising edge of the clock input. The H M 5 2 16165 is offered in 2 banks for improved performance. Features Rev. 0.0 Jul. 2 9 ,1 9 9 4
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HM52161
288-word
16-bit
HM5216165TT-10
HM5216165TT-12
HM52161657T-15
400-mii
50-pin
TTP-50D)
Hz/83
rft electronica
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC54/74HC589A Product Preview 8-B it Serial or Parallel-Input/ Serial-Output Shift Register with 3-S tate Output J SUFFIX CERAM IC PACKAGE CASE 62 0 -1 0 High-Performance Silicon-Gate CMOS The MC54/74HC589A is similar in function to the HC597, which is not a
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MC54/74HC589A
MC54/74HC589A
HC597,
C54/74HC58A9/D
MC54/74HC58A9/D
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HM534253-10
Abstract: No abstract text available
Text: HM534253 Series 262144-Word x — Prelim inary 4-Bit Multiport CMOS Video RAM The HM534253 is a 1-Mbit multiport video RAM equipped with a 256-kword x 4-bit dynamic RAM and a 512-word x 4-bit SAM serial Pin Arrangement HM534253JP Series SC1 1 SI/OO « 2 S I/0 1 1 3
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HM534253
262144-Word
HM534253JP
SI/03
SI/02
256-kword
512-word
00C8-68S
HM534253-10
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PDF
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Untitled
Abstract: No abstract text available
Text: SAW FILTER KF155/S TECHNICAL DATA SPECIFICATIONS FOR SAW FILTER Band pass filters for the receiving RF circuits of pager • High stability and reliability with good performance. • Low insertion loss and deep stop band attenuation for interference. MAXIMUM RATINGS Ta=25°C
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KF155/S
210Q//-10
100MHz
155/S
77T77
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PDF
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1277n
Abstract: No abstract text available
Text: lumm Display For Public Information <New Products > Unique high contrast, wide visual field LCD displays designed and manufactured by Rohm to offer new public applications. These LCD units are suitable for use as public signboard and information boards. Public information boards and signboards must positively operate and have reliable performance under
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RCM1200U
1277N
16X16
97x51
0X135
0X104
RCM1200U
RCM1277N
1277n
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PDF
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MN5410
Abstract: 34fi
Text: UNITRODE/ MICRO NETWORKS OIE D -r T34flE7b OQOOfl'H 0 T-51-07-01 M N 5 4 t a 12 BIT 8 RANGE AUTORANGING A/D CONVERTER PRELIM INARY INFORMATION DESCRIPTIO N FEATURES « Compiete Autoranging System « 19 Bit Dynamic Range • 44 kc Throughput Rate • Internal
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T34flE7b
T-51-07-01
MN5410
34fi
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PDF
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L244N
Abstract: KFM85M
Text: SAW FILTER TECHNICAL DATA KFM85M SPECIFICATIONS FOR SAW FILTER Band pass filter for CDMA IF stage. • Low Insertion Loss. • Balanced or Unbalanced operation possible. MILLIMETERS 6.50 + 0.20 • Source impedance : 50 £2 single or 500 £2 balanced and matching circuit.
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KFM85M
630MHz
700MHz
050MHz
000MHz
300MHz
L244N
KFM85M
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M C 54/74H C 589 8 -B it Serial or P arallel-In p u t/ S erial-O utp u t Shift Register w ith 3 -S ta te Output J SUFFIX CERAMIC PACKAGE CASE 620-10 High-Performance Silicon-Gate CMOS The MC54/74HC589 is similar in function to the HC597, which is not a
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54/74H
MC54/74HC589
HC597,
HC589
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PDF
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D43h
Abstract: FC13H D42h D48h ge JMS 312 Z86C47 Z86E47 FD63H signAL GENERATOR 8038 D46h
Text: Prelim in ary Product S pecification < £ 2 iU 3 E Z86C47-R0M Z86E47-0TP CMOS Z 8 8 - B l T MICROCONTROLLER FEATURES • 4K x 6-Bit Character Generator ROM ■ 160 x 7-Bit Video RAM ■ On-Chip Oscillator that Accepts a Crystal, Ceramic Resonator, LC, or External Clock Drive.
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64-Pin
Z86C47)
Z86E47)
Z86C47-R0M
Z86E47-0TP
D35c13b
Z86C47/E47
D43h
FC13H
D42h
D48h
ge JMS 312
Z86C47
Z86E47
FD63H
signAL GENERATOR 8038
D46h
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PDF
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ddgt
Abstract: No abstract text available
Text: PLESSEY SEMICONDUCTORS TS D É 7EEDS13 DDGt.714 3 7 2 2 0 5 1 3 PLESSEY SEMICONDUCTORS At PLESSE Y PRELIMINARY INFORMATION S em iconductors. 1K WORD X M V 61901 9-BIT FIRST-IN FIRST-OUT MEMORY The MV6T901 is a dual port RAM that utilises a special First-In, First-Out algorithm that loads and empties data on a
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7EEDS13
MV6T901
y6-35
MV61901
MV61901'
ddgt
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PDF
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Untitled
Abstract: No abstract text available
Text: NEC MOS INTEGRATED CIRCUIT MPD4216100, 4217100 16M -B IT DYNAMIC RAM 16 M-WORD BY 1-BIT, FAST PAGE MODE DESCRIPTION The fiPD4216100, 4217100 are 16 777 216 words by 1 bit dynamic CMOS RAMs. They differ in refresh cycle execution. FEATURES • 16 777 216 words by 1 bit organization
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PD4216100,
fiPD4216100,
pPD4216100
cycles/64
/iPD4217100
cycles/32
pPD4216100-50
PD4217100-50
016t8oos
b427525
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PDF
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0829A
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT ¿ PD4264400, 4265400 64 M-BIT DYNAMIC RAM 16 M-WORD BY 4-BIT, FAST PAGE MODE Description The ^P D 4 2 6 4 4 0 0 ,4265400 are 16,777,216 words by 4 bits dynam ic CMOS RAMs. The fast page mode capability realize high speed access and low power consum ption.
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PD4264400,
32-pin
D4264400-A50
D4264400-A70
D4265400-A70
D4265400-A80
P32LE-400A
0829A
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PDF
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Untitled
Abstract: No abstract text available
Text: NN511663 / NN511666series Fast Page Mode _ _w / CMOS 64Kx 16bit Dynamic RAM NPNAV DESCRIPTION The NN511663/1666 series is a high performance CMOS Dynamic Random Access Memory organized as 65,536 words by 16 bits. The NN511663/1666 series is fabricated with advanced CMOS technology and designed with innovative
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NN511663
NN511666series
16bit
NN511663/1666
NN511663/
NN511666aertes
NN511663XXI
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD42S16165L, 4216165L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WOFD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The nPD42S16165L, 42 16165Lare 1 048 576 w o rd s by 16 b its d yn a m ic C MOS R A M s w ith o p tio n a l h yp e r page
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PD42S16165L,
4216165L
16-BIT,
nPD42S16165L,
16165Lare
juPD42S16165L
4216165L
k42752S
aDS74%
16165L,
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