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Nihon Dempa Kogyo Co Ltd NX1255GB-18.89763MHZ
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	NX1255GB-18.89763MHZ		1,000		3	1 - 10 $1.875 100 $0.7031 1000 $0.4875 10000 $0.4875	Buy Now
TAIYO YUDEN F5QA763M0M2QL-J Signal Conditioning 963-FSSCSR1T763MM2QL RPLCMT PN
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TTI	F5QA763M0M2QL-J	Reel			5,000	1 - 10 - 100 - 1000 - 10000 $0.198	Buy Now

763MHZ Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Tel: +44 1460 256 100 Fax: +44 1460 256 101 www.golledge.com Golledge Electronics Ltd Eaglewood Park, ILMINSTER Somerset, TA19 9DQ, UK SAW Filter 763MHz Part No: MP02447 Model: TA1130A REV NO.: 1 A. MAXIMUM RATING: 1. Input Power Level: +5 dBm 2. DC Voltage : 3V	Original	763MHz MP02447 TA1130A TA1130A	PDF
RD07MUS2B Abstract: transistor jc 817 gp 520 diode gp 817 RF POWER TRANSISTOR f763 transistor I 17-13 0773 Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.	Original	RD07MUS2B 175MHz 527MHz RD07MUS2B 175MHz) 527MHz) 870MHz) transistor jc 817 gp 520 diode gp 817 RF POWER TRANSISTOR f763 transistor I 17-13 0773	PDF
RD07MUS2B Abstract: Single-Stage amplifier GRM2162C1H151JD01E 817MHz RD07M Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-900-039-A Date : 10th Oct. ‘08 Rev.date : 30th Jun. 2010 Prepared : Y.Takase S.Kametani Confirmed SUBJECT: :T.Okawa RD07MUS2B single-stage amplifier RF performance at f=763-870MHz,Vdd=7.2V	Original	AN-900-039-A RD07MUS2B 763-870MHz RD07MUS2B: 084YH-G" RD07MUS2B 870MHz 250mA characteristic1JA01 GRM1882C1H101JA01 Single-Stage amplifier GRM2162C1H151JD01E 817MHz RD07M	PDF
GRM1882C1H100JA01D Abstract: GRM1882C1H grm1882c1h4r0cz01d GRM1882C1H8R0DZ01 GRM1882C1H9R0DZ01D RPC05-182 LQG11A8N2S00 GRM1882C1H150JA01D GRM1882C1H120JA01D GRM1882C1H8R0DZ01D Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-900-040-A Date : 6th Aug. 2009 Rev.date : 30th Jun. 2010 Prepared : K.Ijuin S.Kametani Confirmed : T.Okawa RD01MUS1 & RD07MUS2B 2-Stage amplifier RF performance at SUBJECT: f=763-870MHz,Vdd=7.2V	Original	AN-900-040-A RD01MUS1 RD07MUS2B 763-870MHz RD07MUS2B: 086ZE-G" RD01MUS1: RD07MUS2B 250mA GRM1882C1H100JA01D GRM1882C1H grm1882c1h4r0cz01d GRM1882C1H8R0DZ01 GRM1882C1H9R0DZ01D RPC05-182 LQG11A8N2S00 GRM1882C1H150JA01D GRM1882C1H120JA01D GRM1882C1H8R0DZ01D	PDF
RD07MUS2B Abstract: RD07MUS RD07MUS2 f763 gp 817 329J RD07M mitsubishi MOSFET jc 817 j-120 Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W DESCRIPTION OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD07MUS2B is a MOS FET type transistor	Original	RD07MUS2B 175MHz 527MHz RD07MUS2B 175MHz) 527MHz) 870MHz) RD07MUS RD07MUS2 f763 gp 817 329J RD07M mitsubishi MOSFET jc 817 j-120	PDF
marking 7W 66 Abstract: AN-UHF-105 RD07MUS2B transistor jc 817 AN-UHF-116 AN-UHF116 GP 830 diode diode gp 424 AN-900-041 Text: < Silicon RF Power MOS FET Discrete > RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W OUTLINE DRAWING RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications. 6.0+/-0.15	Original	RD07MUS2B 175MHz 527MHz 870MHz RD07MUS2B VHF/UHF/870MHz 175MHz) 527MHz) 870MHz) Oct2011 marking 7W 66 AN-UHF-105 transistor jc 817 AN-UHF-116 AN-UHF116 GP 830 diode diode gp 424 AN-900-041	PDF
RD07MUS2B Abstract: RD07MUS2 RD07MUS diode gp 424 RD07M AN-VHF-046 AN-UHF-116 f763 AN-UHF-106 AN-VHF-053 Text: Silicon RF Power Semiconductors RD07MUS2B ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications.	Original	RD07MUS2B 175MHz 527MHz 870MHz RD07MUS2B VHF/UHF/870MHz 175MHz) 527MHz) 870MHz) RD07MUS2 RD07MUS diode gp 424 RD07M AN-VHF-046 AN-UHF-116 f763 AN-UHF-106 AN-VHF-053	PDF
RD07MUS2B Abstract: f763 MITSUBISHI RF POWER MOS FET S 170 MOSFET TRANSISTOR 329J MOS 6509 mitsubishi MOSFET RD07MUS2 Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W DESCRIPTION OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD07MUS2B is a MOS FET type transistor	Original	RD07MUS2B 175MHz 527MHz RD07MUS2B 175MHz) 527MHz) 870MHz) f763 MITSUBISHI RF POWER MOS FET S 170 MOSFET TRANSISTOR 329J MOS 6509 mitsubishi MOSFET RD07MUS2	PDF