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    75344S Price and Stock

    Rochester Electronics LLC HUF75344S3ST

    MOSFET N-CH 55V 75A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HUF75344S3ST Bulk 41,485 417
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    • 1000 $0.72
    • 10000 $0.72
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    Rochester Electronics LLC HUFA75344S3

    MOSFET N-CH 55V 75A I2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HUFA75344S3 Tube 9,217 268
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    • 1000 $1.12
    • 10000 $1.12
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    Rochester Electronics LLC HUF75344S3

    75A, 55V, 0.008 OHM, N-CHANNEL U
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HUF75344S3 Bulk 296
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    onsemi HUFA75344S3

    MOSFET N-CH 55V 75A I2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HUFA75344S3 Tube 400
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    • 1000 $1.8686
    • 10000 $1.8686
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    Avnet Americas HUFA75344S3 Bulk 4 Weeks 321
    • 1 -
    • 10 -
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    • 1000 $1.092
    • 10000 $1.0296
    		Buy Now
    Chip1Stop HUFA75344S3 380
    • 1 $1.87
    • 10 $1.87
    • 100 $1.87
    • 1000 $1.87
    • 10000 $1.87
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    onsemi HUF75344S3ST

    MOSFET N-CH 55V 75A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HUF75344S3ST Reel
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    Avnet Americas HUF75344S3ST Bulk 4 Weeks 501
    • 1 -
    • 10 -
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    • 1000 $0.71885
    • 10000 $0.65894
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    Find more 75344S price and stock on Findchips.com

    75344S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    75344g

    Abstract: 75344P HUF75344G3 HUF75344P3 HUF75344S3S HUF75344S3ST TB334
    Text: HUF75344G3, HUF75344P3, 75344S3S Data Sheet January 2000 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75344G3, HUF75344P3, HUF75344S3S 75344g 75344P HUF75344G3 HUF75344P3 HUF75344S3S HUF75344S3ST TB334

    75344G

    Abstract: 75344p HUF75344G3 HUF75344P3 HUF75344S3S HUF75344S3ST TB334
    Text: HUF75344G3, HUF75344P3, 75344S3S Data Sheet December 2001 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75344G3, HUF75344P3, HUF75344S3S 75344G 75344p HUF75344G3 HUF75344P3 HUF75344S3S HUF75344S3ST TB334

    Untitled

    Abstract: No abstract text available
    Text: HUF75344G3, HUF75344P3, 75344S3S Data Sheet December 2004 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75344G3, HUF75344P3, HUF75344S3S

    Untitled

    Abstract: No abstract text available
    Text: HUFA75344G3, HUFA75344P3, 75344S3S, 75344S3 Data Sheet 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUFA75344G3, HUFA75344P3, HUFA75344S3S, HUFA75344S3

    Untitled

    Abstract: No abstract text available
    Text: HUF75344G3, HUF75344P3, 75344S3S Semiconductor Data Sheet March 1999 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75344G3, HUF75344P3, HUF75344S3S 32e-3 52e-2 41e-1 13e-1 83e-2 HUF75344 15e-3

    Untitled

    Abstract: No abstract text available
    Text: 75344S3 Data Sheet May 2013 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs Features • 75A, 55V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUFA75344S3

    75344G

    Abstract: 75344 fairchild to-220ab 75344P 75344P HUFA75344G3 HUFA75344P3 HUFA75344S3 HUFA75344S3S HUFA75344S3ST TB334
    Text: HUFA75344G3, HUFA75344P3, 75344S3S, 75344S3 Data Sheet 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUFA75344G3, HUFA75344P3, HUFA75344S3S, HUFA75344S3 75344G 75344 fairchild to-220ab 75344P 75344P HUFA75344G3 HUFA75344P3 HUFA75344S3 HUFA75344S3S HUFA75344S3ST TB334

    75344G

    Abstract: 75344p HUF75344P3 HUF75344G3 HUF75344S3S HUF75344S3ST TB334
    Text: HUF75344G3, HUF75344P3, 75344S3S Data Sheet January 2000 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75344G3, HUF75344P3, HUF75344S3S 75344G 75344p HUF75344P3 HUF75344G3 HUF75344S3S HUF75344S3ST TB334

    75344G

    Abstract: 75344P 75344 HUFA75344G3 HUFA75344P3 HUFA75344S3 HUFA75344S3S HUFA75344S3ST TB334 HUFA75344
    Text: HUFA75344G3, HUFA75344P3, 75344S3S, 75344S3 Data Sheet 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUFA75344G3, HUFA75344P3, HUFA75344S3S, HUFA75344S3 75344G 75344P 75344 HUFA75344G3 HUFA75344P3 HUFA75344S3 HUFA75344S3S HUFA75344S3ST TB334 HUFA75344

    75344G

    Abstract: HUF75344G3 75344P HUF75344P3 HUF75344S3S HUF75344S3ST TB334
    Text: HUF75344G3, HUF75344P3, 75344S3S Data Sheet December 2004 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75344G3, HUF75344P3, HUF75344S3S 75344G HUF75344G3 75344P HUF75344P3 HUF75344S3S HUF75344S3ST TB334

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note

    75344G

    Abstract: 75344P 75344 HUFA75344G3 HUFA75344P3 HUFA75344S3S HUFA75344S3ST TB334 HUFA75344
    Text: HUFA75344G3, HUFA75344P3, 75344S3S Data Sheet December 2001 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUFA75344G3, HUFA75344P3, HUFA75344S3S 75344G 75344P 75344 HUFA75344G3 HUFA75344P3 HUFA75344S3S HUFA75344S3ST TB334 HUFA75344

    75344G

    Abstract: HUFA75344S3ST TB334 75344P HUFA75344G3 HUFA75344P3 HUFA75344S3S
    Text: HUFA75344G3, HUFA75344P3, 75344S3S Data Sheet November 2000 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUFA75344G3, HUFA75344P3, HUFA75344S3S 75344G HUFA75344S3ST TB334 75344P HUFA75344G3 HUFA75344P3 HUFA75344S3S

    Untitled

    Abstract: No abstract text available
    Text: HUFA75344G3, HUFA75344P3, 75344S3S, 75344S3 Data Sheet 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUFA75344G3, HUFA75344P3, HUFA75344S3S, HUFA75344S3

    fairchild to-220ab 75344P

    Abstract: 75344G 75344P 75344P FAIRCHILD HUF75344G3 HUF75344P3 HUF75344S3S HUF75344S3ST TB334
    Text: HUF75344G3, HUF75344P3, 75344S3S Data Sheet December 2001 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75344G3, HUF75344P3, HUF75344S3S fairchild to-220ab 75344P 75344G 75344P 75344P FAIRCHILD HUF75344G3 HUF75344P3 HUF75344S3S HUF75344S3ST TB334

    75344G

    Abstract: 75344P 75344 RELAY TC1 TA75344 HUF75344 HUF75344G3 HUF75344P3 HUF75344S3S HUF75344S3ST
    Text: interrii HUF75344G3, HUF75344P3, 75344S3S January 2000 Data Sheet 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs -9 These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF75344G3, HUF75344P3, HUF75344S3S 75344G 75344P 75344 RELAY TC1 TA75344 HUF75344 HUF75344G3 HUF75344P3 HUF75344S3S HUF75344S3ST

    Untitled

    Abstract: No abstract text available
    Text: HUF75344G3, HUF75344P3, 75344S3, 75344S3S Semiconductor Data Sheet 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF75344G3, HUF75344P3, HUF75344S3, HUF75344S3S O-263AB O-263AB

    75344G

    Abstract: 75344P HUF75344G3 75344s TA75344
    Text: interrii HUF75344G3, HUF75344P3, 75344S3S Data S heet Ja n u a ry 2000 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF75344G3, HUF75344P3, HUF75344S3S AN7254 AN7260. 75344G 75344P HUF75344G3 75344s TA75344