Transistor 2TY
Abstract: PHILIPS CNX21 CNX21 .2ty transistor npn Transistor 3TY diode 2Ty sot211 jn85 diode Optocouplers .2ty transistor
Text: CNX21 ÖUALITY TECHNOLOGIES CORP S7E » • 74bbflSl 0004527 042 ■ ÛTY T ^ H t- HIGH-VOLTAGE OPTOCOUPLER Optically coupled isolator consisting of an infrared emitting GaAs diode and a silicon n-p-n photo transistor. The base is not accessible. Features of this product:
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CNX21
74bbflSl
cut-of1986
OT212.
0DD4fl03
MSA048-2
Transistor 2TY
PHILIPS CNX21
CNX21
.2ty transistor npn
Transistor 3TY
diode 2Ty
sot211
jn85
diode Optocouplers
.2ty transistor
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340 opto isolator
Abstract: No abstract text available
Text: ÛUALITY TECHNOLOGIES CORP S7E T> Optoisolator Specifications_ 74bbflSl 0004500 44fi I< 3T Y /* H11J1-H11J5 Optoisolator GaAs Infrared Emitting Diode and Light Activated Triac Driver T he H l 1J series consists o f a gallium arsenide infrared emitting diode
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74bbflSl
H11J1-H11J5
74bbfl51
0DQ4S11
340 opto isolator
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Untitled
Abstract: No abstract text available
Text: ÛUALITY 'TECHNOLOGIES CORP 57E D 74bbflSl 00G3bl7 b ' X. QUALITY TECHNOLOGIES SLOTTED DARLINGTON OPTOSWITCHES TdtklA MSA6530 MSA8530 MSA7530 MSA9530 DESCRIPTION PACKAGE TYPES E □ MSA6530 _SJ e MSA7530 d E D MSA8530 E The MSAXXXX series of optoswitches is designed to
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74bbflSl
00G3bl7
MSA6530
MSA8530
MSA7530
MSA9530
MSA6530
MSA7530
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C1685
Abstract: C1685 transistor transistor c1684 smd TRANSISTOR 27e an c1685 transistor SMD Transistor 1c C1636 C1685 R transistor C1681 C1296A
Text: ÖUALITY TECHNOLOGIES CORP B7E D QUALITY TECHNOLOGIES • 74bbflSl 0GQ3577 DUAL PHOTOTRANSISTOR OPTOCOUPLERS MCT6 MCT62 MCT61 MCT66 T -4 1 -8 3 DESCRIPTION PACKAGE DIMENSIONS The MCT6X optoisoiators have two channels for high density applications. For four channel applications,
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74bbflSl
0GQ3577
MCT62
MCT61
MCT66
16-pin
C2091
MCT9001
C1685
C1685 transistor
transistor c1684
smd TRANSISTOR 27e
an c1685 transistor
SMD Transistor 1c
C1636
C1685 R transistor
C1681
C1296A
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h9762
Abstract: No abstract text available
Text: ÛUALITY TECHNOLOGIES CORP 57E D I 74bbflSl □ 0 0 4 2 Ii0 3bT IÖTY European “Pro Electron” Registered Types _ CNX35, CNX36 Optoisolator G aAs Infrared Emitting Diode and NPN Silicon Phototransistor T h e CNX35 an d CNX36 are gallium arsenide, in frared
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CNX35,
CNX36
74bbflSl
CNX35
CNX36
SS0100)
h9762
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H11V
Abstract: No abstract text available
Text: S7E J> I flUALITY TECHNOLOGIES CORP 74bbflSl 0004232 7t7 O ptoisolator Specifications _ H11V1, H11V2, H11V3 Optoisolator GaAIAs Infrared Emitting Diode and Silicon Integrated Circuit Video Signal Amplifier SEATING PLANE T h e H I IV series consists o f a high-speed gallium -alum inum arsenide, in frared em itting d iode coupled across a glass
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H11V1,
H11V2,
H11V3
74bbflSl
QQG4E33
H11V
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bt 44a
Abstract: Transistor 2TY npn photo transistor P042A
Text: P040/44A ÛUALITY TECHNOLOGIES CORP S7E D • 74bbflSl GDD4b74 AMT ■t3TY T O A OPTOCOUPLEh I ■ r Optically coupled isolator consisting of an infrared emitting GaAIAs diode and a silicon npn photo transistor with accessible base in a SOT90B envelope. Designed for low input current and long life
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P040/44A
74bbflSl
GDD4b74
OT90B
P040/44A
P040A,
P042A,
P043A,
P044A
74bbfl51
bt 44a
Transistor 2TY
npn photo transistor
P042A
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Untitled
Abstract: No abstract text available
Text: 3UALITY TE CH NOL OGI ES CORP QUALITY TECHNOLOGIES 27E D 74bbflSl QGGHtDS T GaAs INFRARED EMITTING DIODE , . „ _ 7 ^ , MES770 FEATURES PACKAGE DIMENSIONS O u tp u t b e am d iré ctìO Q ^, S p h e r « * 1.S Gallium arsenide infrared LED Side view plastic package
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74bbflSl
MES770
74bbflSl
100us
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Transistor 2TY
Abstract: No abstract text available
Text: I I ÛUA LIT Y T E C H N O L O G I E S CORP 57E D 74bbflSl 0 0 0 M S S 2 5TÔ • û T Y A « CNX38U 7 = ^ OPTOCOUPLER Optically coupled isolator consisting of an infrared emitting GaAs diode and a high voltage silicon npn phototransistor with accessible base. Plastic envelope. Suitable for TTL integrated circuits.
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74bbflSl
CNX38U
E90700
0110b
74bbfl51
OT212.
0DD4fl03
Transistor 2TY
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Untitled
Abstract: No abstract text available
Text: HIGH-SPEED AIGaAS SCHMITT TRIGGER OPTOCOUPLERS OPTOELECTRONICS H11N1 H11N2 H11N3 PACKAGE DIMENSIONS DESCRIPTION The H11N series has a medium-to-high speed integrated circuit detector optically coupled to a gallium-aluminumarsenide infrared emitting diode. The output incorporates
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H11N1
H11N2
H11N3
ST1603
ST2028
ST2029
ST2030
ST2032
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Untitled
Abstract: No abstract text available
Text: RECTANGULAR SOLID STATE LAMPS OPTOELECTRONICS HIGH EFFICIENCY RED YELLOW HIGH EFFICIENCY GREEN HLMP-0300/1 HLMP'0400/1 HLMP-0503/4 DESCRIPTION * SO .018 0.45 + N O M IN AL-2 PLACES I .315 (6.00) .290 (7.37) .100(2.54) .090 (2.29) .100(2.54) NOMIN AL
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HLMP-0300/1
HLMP-0503/4
MV5X123
MV5X123,
C1063C
C1676
C1064C
at260Â
MIL-S-750,
74bbflSl
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Untitled
Abstract: No abstract text available
Text: AIGaAs INFRARED EMITTING DIODE OPTOELECTRONICS QEE122/123 Th e Q E E 12X is an 880 nm AIGaAs LED en capsulated in a w ide angle, dark green, plastic sidelooker shell package. a FEATURES Tight production Ee distribution. Steel lead fram es for im proved reliability in solder
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QEE122/123
QSE11X
74bbflSl
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Untitled
Abstract: No abstract text available
Text: LsSl 2.3 8x8 DOT MATRIX DISPLAYS OPTOELECTRONICS YELLOW GMA2888C HER GMA2988C GREEN GMA2488C BICOLOR RED/GREEN -PACKAGE DIMENSIONS GMC2888C GMC2988C GMC2488C GMC 2688C DESCRIPTION I A. G MX2X88C r I«— 0.4 016
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GMA2888C
GMA2988C
GMA2488C
GMC2888C
GMC2988C
GMC2488C
2688C
MX2X88C
GMX2X88C
GMC2688C
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Untitled
Abstract: No abstract text available
Text: [sia DUAL VERY HIGH-SPEED LOGIC GATE OPTOCOUPLERS OPTOELECTRONICS i _ HCPL-2630 DUAL 10 MBit/s LOGIC GATE HCPL-2631 PACKAGE DIMENSIONS DESCRIPTION The HCPL-2630 and HCPL-2631 dual channel optocouplers have two channels, each consisting of a 700 nm GaAsP LED, optically
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HCPL-2630
HCPL-2631
HCPL-2630
HCPL-2631
4bbfl51
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c1474
Abstract: No abstract text available
Text: AC LINE MONITOR LOGIC-OUT DEVICE OPTOELECTRONICS 1 MID400 PACKAGE DIM EN SIO N S DESCRIPTIO N The MID400 is an optically isolated AC line-to-logic interface device. It is packaged in an 8-lead plastic DIP The AC line voltage is monitored by two back-to-back
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MID400
MID400
C1478A
C1479B
74bbfiS1
74bhfiSl
C1474
c1474
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4N29-4N33
Abstract: No abstract text available
Text: 57E J> ÛUALITY TECHNOLOGIES CORP Optoisolator Specifications _ 7MbbfiSl Ü00mi|4 •ÛTY 4N29, 4N29A, 4N30, 4N31, 4N32, 4N32A, 4N33 Optoisolator G aA s Infrared Emitting Diode and N PN Silicon Photo-Darlington Amplifier SY M BO L M IN E
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4N29A,
4N32A,
E51868
0110b
74bbflSl
4N29-4N33
4N29-4N33
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453 optocoupler
Abstract: optocoupler a 454 optocoupler ic 102 Optocoupler OPTOCOUPLER dc output SL5505S
Text: Philips Semiconductors Product specification 7 ^ -V /- High-speed optocoupler flUALITY TECHNOLOGIES SL5505S CORP S7E D 74bb651 0004720 SST • 2TY FEATURES • Short propagation delay times • Low saturation voltage • High transient immunity • High degree of AC and DC
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SL5505S
OT97F
OT212.
74bbflSl
453 optocoupler
optocoupler a 454
optocoupler ic
102 Optocoupler
OPTOCOUPLER dc output
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314 optocoupler
Abstract: 14CNP SOT-90B 453 optocoupler sot90b optocoupler 312 317 optocoupler transistor b73
Text: Philips Semiconductors Product specification 7 Optocoupler 2UALITY T E C H N O L O G I E S OF4114 CORP 57E D 74t.bfiSl G D O H b b b 773 » A T Y FEATURES • High current transfer ratio and low saturation voltage, making the device suitable for use with
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OF4114
OT90B
CNY17-3,
14CNP.
MSB051
OF4114
OT212.
74bbflSl
0DD4fl03
314 optocoupler
14CNP
SOT-90B
453 optocoupler
sot90b
optocoupler 312
317 optocoupler
transistor b73
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GE SC160B triac
Abstract: SC160B 3kw triac H11AG1 H11AG2 gemov relay 12v 100A C2079 H11AG3 ST2122
Text: PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS H11AG1 H11AG2 H11AG3 PACKAGE DIMENSIONS DESCRIPTION The H11AG series consists of a gallium-aluminumarsenide infrared emitting diode coupled with a silicon phototransistor in a dual in-line package. This device provides the unique feature of high current transfer ratio
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H11AG1
H11AG2
H11AG3
H11AG
C2079
ST2125
D00b225
GE SC160B triac
SC160B
3kw triac
gemov
relay 12v 100A
C2079
H11AG3
ST2122
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Untitled
Abstract: No abstract text available
Text: SL5500 SL5501 SL5511 , ÛUALITY TECHNOLOGIES CORP 57E D • 74bbô51 0GD4bûT 270 «fiTY OPTOCOUPLERS Optically coupled isolators consisting of an infrared emitting GaAs diode and a silicon npn phototransistor with accessible base. Plastic envelopes. Suitable for T T L integrated circuits.
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SL5500
SL5501
SL5511
OT212.
MSA048-2
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PDF
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CNY17G-3
Abstract: CNY17G3
Text: Philips Semiconductors Product specification High-voltage optocouplers CNY17G/CNY17GF QUALITY TECHNOLOGIES CORP TMbböSl OOOMbEE M m S7E D IflTY FEATURES • High current transfer ratio and a low saturation voltage, making the devices suitable for use with
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CNY17G/CNY17GF
E90700
BS415
BS7002
OT212.
74bbflSl
0DD4fl03
MSA048-2
CNY17G-3
CNY17G3
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification 7 Heavy duty optocouplers 2UALITY T E C H N O L O G I E S C0 RP CNW11AV-1/2/3 S7E D 74bbfi51 0 0 G 4 4 b 4 03T « f i T Y FEATURES • Minimum 2 mm isolation thickness between emitter and receiver • A wide body encapsulation with a
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CNW11AV-1/2/3
74bbfi51
E90700
OT212.
74bbflSl
0DD4fl03
MSA048-2
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Untitled
Abstract: No abstract text available
Text: 4N29 4N30 4N31 ÛUALITY TECHNOLOGIES CORP S7E ]> 4N32 4N33 T m4 • Ö TY s a OPTOCOUPLER Opto-isolator comprising an infrared emitting GaAs diode and a silicon npn Darlington phototransistor with accessible base. Plastic 6-lead dual-in-line DIL envelope.
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E90700
0110B
AC/450
57804/VDE
86/HD
195S4
74bbfl51
OT212.
74bbflSl
0DD4fl03
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PDF
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Untitled
Abstract: No abstract text available
Text: f i PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS II MCT2E PACKAGE DIMENSIONS DESCRIPTION T h e M C T 2E is a NPN silicon planar phototransistor db f i Æ optically coupled to a gallium arsenide infrared emitting diode. FEATURES & APPLICATIONS Utility/econom y isolator
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Vcea110
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