Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification 7 Heavy duty optocouplers 2UALITY T E C H N O L O G I E S C0 RP CNW11AV-1/2/3 S7E D 74bbfi51 0 0 G 4 4 b 4 03T « f i T Y FEATURES • Minimum 2 mm isolation thickness between emitter and receiver • A wide body encapsulation with a
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CNW11AV-1/2/3
74bbfi51
E90700
OT212.
74bbflSl
0DD4fl03
MSA048-2
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Untitled
Abstract: No abstract text available
Text: PANEL INDICATORS DPTOELECïROmCS YELLOW M V 53173 HIGH EFFICIENCY GREEN M V 54173 HIGH EFFICIENCY RED M V 57173 DESCRIPTION The MV5X173 series is a large rectangular lamp which contains two LED chips with separate anodes and cathodes for each light. The illuminated area is
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MV5X173
500-inchesx0
250-inches
500-inchx
250-inch
C1702
C1194A
MV53173
MV54173
74bbfi51
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Untitled
Abstract: No abstract text available
Text: DUAL PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS MCT9001 PACKAGE DIMENSIONS D ESCRIPTIO N The MCT9001 is a tw o channel optocoupler in a standard, end stackable, 8 pin dual-in-line package, This part offers the same packing density as 4 pin optocouplers, while m inim izing co m ponent count and
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MCT9001
MCT9001
E50151
C1680
C1685
C1294
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Untitled
Abstract: No abstract text available
Text: LsSl 2.3 8x8 DOT MATRIX DISPLAYS OPTOELECTRONICS YELLOW GMA2888C HER GMA2988C GREEN GMA2488C BICOLOR RED/GREEN -PACKAGE DIMENSIONS GMC2888C GMC2988C GMC2488C GMC 2688C DESCRIPTION I A. G MX2X88C r I«— 0.4 016
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GMA2888C
GMA2988C
GMA2488C
GMC2888C
GMC2988C
GMC2488C
2688C
MX2X88C
GMX2X88C
GMC2688C
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Untitled
Abstract: No abstract text available
Text: I REFLECTIVE OBJECT SENSOR OPTOELECTRONICS QRD1113/1114 P PACKAGE DIMENSIONS DESCRIPT The QRD1113/1114 reflective sensors consist of an infrared emitting diode and an NPN silicon phototransistor mounted side by side in a black plastic housing. The on-axis radiation of the emitter and the
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QRD1113/1114
QRD1113/1114
QRD1113/1114.
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Untitled
Abstract: No abstract text available
Text: GaAs INFRARED EMITTING DIODE OPTOELECTRONICS QEC112/113 PACKAGE DIMENSIONS DESCRIPTION .126 3.20 .106 (2.69) REFERENCE SURFACE r .203 (5.16) .183(4.65) .030 (0.76) NOM _L .042 (1.07) X ±.010 (±.25) CATHODE t .800 (20.3) MIN 1 I .050 (1.27) REF I The QEC11X is a 940 nm GaAs LED encapsulated in a
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QEC112/113
QEC11X
QSC11X
000L270
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Untitled
Abstract: No abstract text available
Text: TAPERED PACKAGE T-13/. SOLID STATE LAMPS OPTOELECTRONICS STANDARD RED MV502XA PACKAGE DIMENSIONS DESCRIPTION The MV502X Series of solid state indicators is made with gallium arsenide phosphide light emitting diodes. Encapsulation and lens is epoxy. Various lens effects are
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MV502XA
MV502X
MV5021A
MV5022A
MV5023A
MV5024A
MV5025A
MV5026A
C654A
10QuS
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5082-7650
Abstract: No abstract text available
Text: 0.43-INCH SEVEN SEGMENT DISPLAYS optoelectronics HIGH EFFICIENCY RED 5082-7650 SERIES RED 5082-7700 SERIES FEA TU RES • ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO N Industry-standard 0.43-inch displays High Efficiency Red and standard Red models Left or right decimal versions
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43-INCH
43-inch
082-775X
/5082-765X
C2022
C2021
5082-7650
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sot212
Abstract: Quality Technologies optocouplers 2ty transistor
Text: P h ilip s S em Product specification GaAIAs high-voltage optocouplers 2UALITY TECHNOLOGIES CORP CNG82/CNG83 S7E 1> • 74t.bfiSl 0 0 0 4 4 3 e T s 5 T " S 7 t Y FEATURES • High output/input current
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CNG82/CNG83
E90700
BS415
0110b
OT212.
74bbflSl
0DD4fl03
sot212
Quality Technologies optocouplers
2ty transistor
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Untitled
Abstract: No abstract text available
Text: OPTOELECTRONICS PCB MOUNT LED INDICATORS T-3/4 S u b m in ia tu re - Long P a c k a g e Front View -I I-»- Part Number Typical Wave length \p (nm) Lens Color Typical Viewing Angle 660 Red Diffused 40° 1.7 2.0 1.0 1 2.0 3 Yellow 585 Yellow Diffused 40°
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MV5000
MV5300
MV5400
MR5000
MR5010
V37509
MV33509
MV34509
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CBC 184 transistor
Abstract: CNX35U Transistor 2TY CBC 184 c transistor
Text: CNX35U CNX36U PM VO O I I Û U A L IT Y T E C H N O L O G I E S CORP S7E D 7 4 b b 6 5 1 G G G 4 53 4 EfiS • ■ 3T Y — % OPTOCOUPLERS Optically coupled isolators consisting o f an infrared emitting GaAs diode and a silicon npn phototransistor w ith accessible base. Plastic envelopes. Suitable fo r TTL integrated circuits.
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CNX35U
CNX36U
E90700
0110b
74bbfl51
OT212.
74bbflSl
0DD4fl03
CBC 184 transistor
CNX35U
Transistor 2TY
CBC 184 c transistor
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Untitled
Abstract: No abstract text available
Text: Product specification Philips Semiconductors Wide body, high isolation/high-gain optocouplers flUALITY TECHNOLOGIES CORP CNW 138/CNW 139 57E J> 7Mbt3fl51 0004512 bll • ö T Y FEATURES • Wide body DIL encapsulation, with a pin distance of 10.16 mm • Minimum clearance of 9.6 mm
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138/CNW
7Mbt3fl51
OT212.
74bbflSl
0DD4fl03
MSA048-2
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Transistor 3TY
Abstract: No abstract text available
Text: I I ÛU AL ITY T E C H N O L O G I E S CORP S7E D • 7 4 b b ô 5 1 0 G G4 41 7 212 « f l T Y U N u a t» CNG36 GaAIAs OPTOCOUPLERS O ptically coupled isolators consisting o f an infrared emitting GaAIAs diode and a silicon npn phototransistor w ith accessible base in a SOT90B envelope, designed fo r low input current and long life
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CNG36
OT90B
OT212.
74bbflSl
0DD4fl03
MSA048-2
Transistor 3TY
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Untitled
Abstract: No abstract text available
Text: PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS MCT210 PACKAGE DIMENSIONS DESCRIPTION The MCT210 incorporates a NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. The MCT210 has a specified minimum CTR of 50%, saturated, and 150%, unsaturated.
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MCT210
MCT210
MCT210â
E90700)
74bbfl51
000bl23
D00L124
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Untitled
Abstract: No abstract text available
Text: OPTOELECTRONICS I PHOTOTRANSISTOR OPTOCOUPLER MCT271 DESCRIPTION PACKAGE DIMENSIONS db & The MCT271 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN silicon phototransistor.
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MCT271
MCT271
E90700
C1682
C1681
C1683
C1684
C1296A
74bbfl51
C1294
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Untitled
Abstract: No abstract text available
Text: PLASTIC SILICON PHOTODARLINGTON OPTOELECTRDHICS L 14 R 1 DESCRIPTION PACKAGE DIMENSIONS >•—D—• * î t— t—I — — E J .isLs The L14R1 is a silicon photodarlington encapsulated in a clear, wide angle, sidelooker package. i ' Code I I SECTION X-X
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L14R1
ST1335
at2870Â
0Q0b440
4bbfi51
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c1941 transistor
Abstract: TRANSISTOR C1941
Text: ISO HIGH-PERFORMANCE AlGaAs PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS II MCT5200 MCT5201 PACKAGE DIMENSIONS DESCRIPTION The MCT520X are high performance logic compatible phototransistor type optically coupled isolator products. They are constructed using a very low degradation and
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MCT5200
MCT5201
MCT520X
C1819
74bbfl51
MCT5200
74bbfi51
c1941 transistor
TRANSISTOR C1941
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74LSxx
Abstract: ic 74xx 74lxx
Text: s HIGH GAIN SPLIT-DARLINGTON OPTOCOUPLERS o OPTOELECTRONICS 6N138 6N139 DESCRIPTION The 6N138/9 single channel optocouplers contain a 700 nm GaAsP LED emitter which is optically coupled to a high gain detector in a split Darlington configuration, providing extremely
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6N138
6N139
6N138/9
MCC670
74LXX
74SXX
74LSXX
74HXX
74SXX
74LSxx
ic 74xx
74lxx
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transistor c1718
Abstract: No abstract text available
Text: PHOTODARLINGTON OPTOCOUPLERS OPTOELECTRONICS 4N32 4N33 PACKAGE DIMENSIONS DESCRIPTION The 4N32 and 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. FEATURES & APPLICATIONS High isolation resistance— 101,ft
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E90700
ST1603A
74bbfiSl
C1686
C1894
C1717
C1718
C1719
74bbfl51
74bbfi51
transistor c1718
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TRANSISTOR BI 243
Abstract: tr/TRANSISTOR BI 243
Text: E Q SLOTTED OPTICAL SWITCH OP TO E L E CT R ON I CS H21A4/5/6 PACKAGE DIMENSIONS SYMBOL -D1 - ©T — lX 3 | g b! SECTION X - xT~ LEAD PROFILE S T 1339-01 MILLIMETERS M!N. MAX. INCHES MIN. A 10.7 11.0 .422 .433 A, 3.0 3.2 .119 .125 3.0 3.2 .119
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H21A4/5/6
ST1144-11
ST1141-11
ST1145-11
ST1142-11
ST1143-11
TRANSISTOR BI 243
tr/TRANSISTOR BI 243
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Untitled
Abstract: No abstract text available
Text: DOUBLE HETEROJUNCTION AIGaAs LOW CURRENT RED LED LAMPS OPTOELECTRONICS J-VA HLMP-D150A/D155A T-1 HLMP-K150/K155 PACKAGE DIMENSIONS DESCRIPTION 3.15±0.2 A recently developed double heterojunction DH AIGaAs/GaAs material technology is the basis of the light
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HLMP-D150A/D155A
HLMP-K150/K155
C2203
C2205
C2213
HLMP-K150/K
0QQL717
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Untitled
Abstract: No abstract text available
Text: EO 0.800-INCH SEVEN SEGMENT DISPLAYS OPTOELECTRONICS HIGH EFFICIEN CY GREEN MAN8400 SERIES FEATURES High Efficiency Green nitrogen-doped GaAsP on GaP Large, easy to read, digits Common anode or common cathode models Fast switching — excellent for multiplexing
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800-INCH
MAN8400
74bbfl51
00Dbb04
C1697
0D0bb05
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Untitled
Abstract: No abstract text available
Text: [ * n SURFACE M O U N T LED LAMP 1 2 0 6 C H IP TYPE OPTOELECTRONICS RED YELLOW GREEN QTLP650D-2 QTLP650D-3 QTLP650D-4 Diffused Diffused Diffused RED YELLOW GREEN AIGaAs RED QTLP650C-2 QTLP650C-3 QTLP650C-4 QTLP650C-7 W ater W ater W ater W ater Clear Clear
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QTLP650D-2
QTLP650D-3
QTLP650D-4
QTLP650C-2
QTLP650C-3
QTLP650C-4
QTLP650C-7
QT-008-A
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Untitled
Abstract: No abstract text available
Text: [s9 AIGaAs INFRARED EMITTING DIODE OPTOELECTRONICS QED522/523 PACKAGE DIMENSIONS DESCRIPTION Th e Q E D 52X is an 8 8 0 nm AIGaAs LED encapsulated in a clear, peach tinted, plastic T O -4 6 package. REFERENCE SURFACE .230 5.84 .210(5.33) FEATURES Tight production Ea distribution.
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QED522/523
74bbfi51
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